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7619310 |
Semiconductor interconnect and method of making same
An integrated circuit interconnect structure includes a conductive line, a first barrier layer disposed on a bottom surface of conductive line, a second barrier layer disposed on the top surface of...
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7619309 |
Integrated connection arrangements
A connection arrangement having an outer conductive structure arranged at least partly or completely in a cutout of an electrical insulation layer is provided. An inner conductive structure is...
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7619297 |
Electronic device including an inductor
An electronic device can include an inductor overlying a shock-absorbing layer. In one aspect, the electronic device can include a substrate, an interconnect level overlying the substrate, and the...
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7619264 |
Semiconductor device
An electric fuse includes a wide interconnect and a narrow interconnect. The electric fuse has a juxtaposed region in which a plurality of straight line portions are juxtaposed with each other by...
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7618890 |
Methods for forming conductive structures and structures regarding same
A method for forming a metal/metal oxide structure that includes forming metal oxide regions, e.g. ruthenium oxide regions, at grain boundaries of a metal layer, e.g., platinum. Preferably, the...
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7617598 |
Method of making a thermally isolated via structure
This document discusses, among other things, a method including providing a laminate having a first conductive layer, a second conductive layer and an insulator between the first and second...
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7615848 |
Semiconductor device and a method of manufacturing the same
A semiconductor IC device which includes a circuit region and a peripheral region on a main surface of a semiconductor substrate, a first insulating film formed over the main surface, external...
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7615819 |
Semiconductor device
A semiconductor device includes a semiconductor substrate, an insulating film formed above an upper surface of the substrate and including a contact hole penetrating the insulating film, a wiring...
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7612453 |
Semiconductor device having an interconnect structure and a reinforcing insulating film
A semiconductor device includes in an interconnect structure which includes a first interconnect made of a copper-containing metal, a first Cu silicide layer covering the upper portion of the first...
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7608928 |
Laminated body and semiconductor device
A laminate includes a copper wiring layer ( 20 ) provided over a semiconductor layer and having a specific pattern, a protective layer ( 30 ) formed of a polybenzoxazole resin layer provided on the...
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7608927 |
Localized biasing for silicon on insulator structures
A silicon-on-insulator device has a localized biasing structure formed in the insulator layer of the SOI. The localized biasing structure includes a patterned conductor that provides a biasing...
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7605471 |
Semiconductor devices and methods for manufacturing the same
Semiconductor devices having a copper line layer and methods for manufacturing the same are disclosed. An illustrated semiconductor device comprises a damascene insulating layer having a contact...
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7605470 |
Dummy patterns and method of manufacture for mechanical strength of low K dielectric materials in copper interconnect structures for semiconductor devices
A method for fabricating a semiconductor device. The method includes providing a semiconductor substrate including a surface region. The method forms a first interlayer dielectric overlying the...
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7605464 |
Semiconductor device
A semiconductor device includes: a semiconductor substrate having an integrated circuit formed thereon and an electrode electrically coupled to the integrated circuit; a passivation film formed on...
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7605414 |
MOS transistors having low-resistance salicide gates and a self-aligned contact between them
A method for forming a self-aligned contact between two MOS transistors is described. The method supports the use of low-resistivity suicides for the formation of contacts in nanometer applications...
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7602065 |
Seal ring in semiconductor device
A semiconductor device includes a first circuit, a first seal ring and at least one first notch. The first seal ring surrounds the first circuit. The first notch cuts the first seal ring....
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7602064 |
Semiconductor device having an inspection hole striding a boundary
The semiconductor device includes a semiconductor substrate, a diffusion layer, an interconnect layer, a contact plug, a contact-inspection hole, a via plug, and a via-inspection hole. Similarly to...
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7601998 |
Semiconductor memory device having metallization comprising select lines, bit lines and word lines
A semiconductor device includes a semiconductor substrate including a first region having a cell region and a second region having a peripheral circuit region, first transistors on the...
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7601631 |
Very low dielectric constant plasma-enhanced CVD films
The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon...
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7601629 |
Semiconductive device fabricated using subliming materials to form interlevel dielectrics
The invention provides a method of fabricating a semiconductive device [ 200 ]. In this embodiment, the method comprises depositing a hydrocarbon layer [ 294 ] over a semiconductive substrate,...
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7598616 |
Interconnect structure
A structure. The structure includes: a core electrical conductor having a top surface, an opposite bottom surface and sides between the top and bottom surfaces; an electrically conductive liner in...
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7598615 |
Analytic structure for failure analysis of semiconductor device having a multi-stacked interconnection structure
In an analytic structure for failure analysis of a semiconductor device, a plurality of analytic regions are arranged in regions of a semiconductor substrate. A plurality of semiconductor...
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7595555 |
Method of forming air gaps in a dielectric material using a sacrificial film and resulting structures
A method of forming air gaps surrounding conductors in a dielectric layer, the dielectric layer comprising, for example, part of the interconnect structure of an integrated circuit device. The air...
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7595554 |
Interconnect structure with dielectric air gaps
An interconnect structure with improved performance and capacitance by providing air gaps inside the dielectric layer by use of a multi-phase photoresist material. The interconnect features are...
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7592710 |
Bond pad structure for wire bonding
A bond pad structure of an integrated circuit is provided. The bond pad structure includes a conductive bond pad, a first dielectric layer underlying the bond pad, and an M top plate located in...
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7592248 |
Method of forming semiconductor device having nanotube structures
A semiconductor device having upright dielectric nanotubes at an inter-layer dielectric level and method of manufacturing such a device is disclosed. The use of a catalyst is proposed in the...
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7592247 |
Sub-lithographic local interconnects, and methods for forming same
The present invention relates to a semiconductor device having first and second active device regions that are located in a semiconductor substrate and are isolated from each other by an isolation...
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7589424 |
Thin silicon based substrate
Embodiments of the invention provide a device with a die and a substrate having a similar coefficient of thermal expansion to that of the die. The substrate may comprise a silicon base layer. Build...
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7589423 |
Semiconductor device and a method of manufacturing the same and designing the same
There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing...
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7589398 |
Embedded metal features structure
A method and structure for creating embedded metal features includes embedded trace substrates wherein bias and signal traces are embedded in a first surface of the embedded trace substrate and...
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7589011 |
Semiconductor device and method of forming intermetal dielectric layer
There is provided a semiconductor device in which extension units are formed in the ends of a slit that constitutes a slit pattern to relieve stress transmitted between interconnect layers. The...
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7586196 |
Apparatus for an improved air gap interconnect structure
In one embodiment, an apparatus comprises a first layer having at least one interconnect formed in an interlayer dielectric (ILD), a second layer formed over the first layer having a second at...
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7586195 |
Semiconductor device
An electronic component for microwave transmission includes a high resistivity substrate on which is at least located several metallization layers divided into portions. A first set of piled up...
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7586176 |
Semiconductor device with crack prevention ring
A crack prevention ring at the exterior edge of an integrated circuit prevents delamination and cracking during the separation of the integrated circuits into individual die. The crack prevention...
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7586143 |
Semiconductor device
A substrate is provided with a first wiring layer 111 , an interlayer insulating film 132 on the first wiring layer 111 , a hole 112 A formed in the interlayer insulating film, a first metal...
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7586132 |
Power FET with low on-resistance using merged metal layers
In one embodiment, relatively thin but wide metal bus strips overlying a high power FET are formed to conduct current to the source and drain narrow metal strips. A passivation layer is formed over...
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7585754 |
Method of forming bonding pad opening
A method of forming a bonding pad opening is provided. A passivation layer and a mask layer are sequentially formed on a substrate having a bonding pad formed thereon. Thereafter, the passivation...
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7582970 |
Carbon containing silicon oxide film having high ashing tolerance and adhesion
A semiconductor device includes an interlayer insulating film formed on or over a semiconductor substrate. An opening is formed in the interlayer insulating film and reaches a lower layer metal...
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7582969 |
Hermetic interconnect structure and method of manufacture
A hermetic interconnect is fabricated on a substrate by forming a stud of conductive material over a metallization layer, and then overcoating the stud of conductive material and the metallization...
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7579696 |
Semiconductor device
A semiconductor device includes an effective wire formed above a substrate in a multilayer interconnection structure and having a first electrode pad in a top layer; a first reinforcing material...
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7573142 |
Alignment key structure in a semiconductor device and method of forming the same
An alignment key structure in a semiconductor device is provided. The alignment key structure includes an insulation layer formed on a substrate, and a passivation layer pattern formed on the...
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7573135 |
Electronic parts packaging structure in which a semiconductor chip is mounted on a wiring substrate and buried in an insulation film
The present invention includes the steps of forming a first resin film uncured on a wiring substrate including a wiring pattern, burying an electronic parts having a connection terminal on an...
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7573133 |
Interconnect structures and methods for their fabrication
One or more embodiments of the present invention relate to structures obtained by methods (a) for growing a film by an intermixing growth process, or (b) by depositing a film, which film includes...
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7572734 |
Etch depth control for dual damascene fabrication process
The etch depth during trench over via etch of a dual damascene structure in a dielectric film stack is controlled to be the same over the dense area and the open area of a substrate and solve...
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7572728 |
Semiconductor device and method for manufacturing the same
A semiconductor device and method with a dual damascene pattern uses buffer layers to prevent photoresist layer poisoning due to a reaction between an interlayer dielectric and a photoresist layer....
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7569936 |
Semiconductor device and method of manufacturing the same
A semiconductor device which is capable of avoiding an increase in pattern ratio and allowing wiring dummy patterns to improve global steps developed by CMP upon insertion of the dummy patterns...
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7569908 |
Semiconductor device and method of manufacturing the same
A semiconductor device including inductors with improved reliability and a method of manufacturing the same are provided. The semiconductor device may include a substrate, an insulating film...
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7569476 |
Semiconductor integrated circuit device and a method of manufacturing the same
In manufacturing a semiconductor integrated circuit device, an interconnect trench and a contact hole are formed in an interlayer insulating film formed over a first-level interconnect on a...
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7566971 |
Semiconductor device and manufacturing method thereof
The invention provides a technology for manufacturing a higher performance and higher reliability semiconductor device at low cost and with high yield. The semiconductor device of the invention has...
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7564135 |
Semiconductor device having self-aligned contact and method of fabricating the same
A semiconductor device includes a conductive pattern disposed on a substrate, a first interlayer dielectric layer disposed on the substrate and the conductive pattern, a first dummy pattern...
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