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7619310 Semiconductor interconnect and method of making same  
An integrated circuit interconnect structure includes a conductive line, a first barrier layer disposed on a bottom surface of conductive line, a second barrier layer disposed on the top surface of...
7619309 Integrated connection arrangements  
A connection arrangement having an outer conductive structure arranged at least partly or completely in a cutout of an electrical insulation layer is provided. An inner conductive structure is...
7619297 Electronic device including an inductor  
An electronic device can include an inductor overlying a shock-absorbing layer. In one aspect, the electronic device can include a substrate, an interconnect level overlying the substrate, and the...
7619264 Semiconductor device  
An electric fuse includes a wide interconnect and a narrow interconnect. The electric fuse has a juxtaposed region in which a plurality of straight line portions are juxtaposed with each other by...
7618890 Methods for forming conductive structures and structures regarding same  
A method for forming a metal/metal oxide structure that includes forming metal oxide regions, e.g. ruthenium oxide regions, at grain boundaries of a metal layer, e.g., platinum. Preferably, the...
7617598 Method of making a thermally isolated via structure  
This document discusses, among other things, a method including providing a laminate having a first conductive layer, a second conductive layer and an insulator between the first and second...
7615848 Semiconductor device and a method of manufacturing the same  
A semiconductor IC device which includes a circuit region and a peripheral region on a main surface of a semiconductor substrate, a first insulating film formed over the main surface, external...
7615819 Semiconductor device  
A semiconductor device includes a semiconductor substrate, an insulating film formed above an upper surface of the substrate and including a contact hole penetrating the insulating film, a wiring...
7612453 Semiconductor device having an interconnect structure and a reinforcing insulating film  
A semiconductor device includes in an interconnect structure which includes a first interconnect made of a copper-containing metal, a first Cu silicide layer covering the upper portion of the first...
7608928 Laminated body and semiconductor device  
A laminate includes a copper wiring layer ( 20 ) provided over a semiconductor layer and having a specific pattern, a protective layer ( 30 ) formed of a polybenzoxazole resin layer provided on the...
7608927 Localized biasing for silicon on insulator structures  
A silicon-on-insulator device has a localized biasing structure formed in the insulator layer of the SOI. The localized biasing structure includes a patterned conductor that provides a biasing...
7605471 Semiconductor devices and methods for manufacturing the same  
Semiconductor devices having a copper line layer and methods for manufacturing the same are disclosed. An illustrated semiconductor device comprises a damascene insulating layer having a contact...
7605470 Dummy patterns and method of manufacture for mechanical strength of low K dielectric materials in copper interconnect structures for semiconductor devices  
A method for fabricating a semiconductor device. The method includes providing a semiconductor substrate including a surface region. The method forms a first interlayer dielectric overlying the...
7605464 Semiconductor device  
A semiconductor device includes: a semiconductor substrate having an integrated circuit formed thereon and an electrode electrically coupled to the integrated circuit; a passivation film formed on...
7605414 MOS transistors having low-resistance salicide gates and a self-aligned contact between them  
A method for forming a self-aligned contact between two MOS transistors is described. The method supports the use of low-resistivity suicides for the formation of contacts in nanometer applications...
7602065 Seal ring in semiconductor device  
A semiconductor device includes a first circuit, a first seal ring and at least one first notch. The first seal ring surrounds the first circuit. The first notch cuts the first seal ring....
7602064 Semiconductor device having an inspection hole striding a boundary  
The semiconductor device includes a semiconductor substrate, a diffusion layer, an interconnect layer, a contact plug, a contact-inspection hole, a via plug, and a via-inspection hole. Similarly to...
7601998 Semiconductor memory device having metallization comprising select lines, bit lines and word lines  
A semiconductor device includes a semiconductor substrate including a first region having a cell region and a second region having a peripheral circuit region, first transistors on the...
7601631 Very low dielectric constant plasma-enhanced CVD films  
The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon...
7601629 Semiconductive device fabricated using subliming materials to form interlevel dielectrics  
The invention provides a method of fabricating a semiconductive device [ 200 ]. In this embodiment, the method comprises depositing a hydrocarbon layer [ 294 ] over a semiconductive substrate,...
7598616 Interconnect structure  
A structure. The structure includes: a core electrical conductor having a top surface, an opposite bottom surface and sides between the top and bottom surfaces; an electrically conductive liner in...
7598615 Analytic structure for failure analysis of semiconductor device having a multi-stacked interconnection structure  
In an analytic structure for failure analysis of a semiconductor device, a plurality of analytic regions are arranged in regions of a semiconductor substrate. A plurality of semiconductor...
7595555 Method of forming air gaps in a dielectric material using a sacrificial film and resulting structures  
A method of forming air gaps surrounding conductors in a dielectric layer, the dielectric layer comprising, for example, part of the interconnect structure of an integrated circuit device. The air...
7595554 Interconnect structure with dielectric air gaps  
An interconnect structure with improved performance and capacitance by providing air gaps inside the dielectric layer by use of a multi-phase photoresist material. The interconnect features are...
7592710 Bond pad structure for wire bonding  
A bond pad structure of an integrated circuit is provided. The bond pad structure includes a conductive bond pad, a first dielectric layer underlying the bond pad, and an M top plate located in...
7592248 Method of forming semiconductor device having nanotube structures  
A semiconductor device having upright dielectric nanotubes at an inter-layer dielectric level and method of manufacturing such a device is disclosed. The use of a catalyst is proposed in the...
7592247 Sub-lithographic local interconnects, and methods for forming same  
The present invention relates to a semiconductor device having first and second active device regions that are located in a semiconductor substrate and are isolated from each other by an isolation...
7589424 Thin silicon based substrate  
Embodiments of the invention provide a device with a die and a substrate having a similar coefficient of thermal expansion to that of the die. The substrate may comprise a silicon base layer. Build...
7589423 Semiconductor device and a method of manufacturing the same and designing the same  
There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing...
7589398 Embedded metal features structure  
A method and structure for creating embedded metal features includes embedded trace substrates wherein bias and signal traces are embedded in a first surface of the embedded trace substrate and...
7589011 Semiconductor device and method of forming intermetal dielectric layer  
There is provided a semiconductor device in which extension units are formed in the ends of a slit that constitutes a slit pattern to relieve stress transmitted between interconnect layers. The...
7586196 Apparatus for an improved air gap interconnect structure  
In one embodiment, an apparatus comprises a first layer having at least one interconnect formed in an interlayer dielectric (ILD), a second layer formed over the first layer having a second at...
7586195 Semiconductor device  
An electronic component for microwave transmission includes a high resistivity substrate on which is at least located several metallization layers divided into portions. A first set of piled up...
7586176 Semiconductor device with crack prevention ring  
A crack prevention ring at the exterior edge of an integrated circuit prevents delamination and cracking during the separation of the integrated circuits into individual die. The crack prevention...
7586143 Semiconductor device  
A substrate is provided with a first wiring layer 111 , an interlayer insulating film 132 on the first wiring layer 111 , a hole 112 A formed in the interlayer insulating film, a first metal...
7586132 Power FET with low on-resistance using merged metal layers  
In one embodiment, relatively thin but wide metal bus strips overlying a high power FET are formed to conduct current to the source and drain narrow metal strips. A passivation layer is formed over...
7585754 Method of forming bonding pad opening  
A method of forming a bonding pad opening is provided. A passivation layer and a mask layer are sequentially formed on a substrate having a bonding pad formed thereon. Thereafter, the passivation...
7582970 Carbon containing silicon oxide film having high ashing tolerance and adhesion  
A semiconductor device includes an interlayer insulating film formed on or over a semiconductor substrate. An opening is formed in the interlayer insulating film and reaches a lower layer metal...
7582969 Hermetic interconnect structure and method of manufacture  
A hermetic interconnect is fabricated on a substrate by forming a stud of conductive material over a metallization layer, and then overcoating the stud of conductive material and the metallization...
7579696 Semiconductor device  
A semiconductor device includes an effective wire formed above a substrate in a multilayer interconnection structure and having a first electrode pad in a top layer; a first reinforcing material...
7573142 Alignment key structure in a semiconductor device and method of forming the same  
An alignment key structure in a semiconductor device is provided. The alignment key structure includes an insulation layer formed on a substrate, and a passivation layer pattern formed on the...
7573135 Electronic parts packaging structure in which a semiconductor chip is mounted on a wiring substrate and buried in an insulation film  
The present invention includes the steps of forming a first resin film uncured on a wiring substrate including a wiring pattern, burying an electronic parts having a connection terminal on an...
7573133 Interconnect structures and methods for their fabrication  
One or more embodiments of the present invention relate to structures obtained by methods (a) for growing a film by an intermixing growth process, or (b) by depositing a film, which film includes...
7572734 Etch depth control for dual damascene fabrication process  
The etch depth during trench over via etch of a dual damascene structure in a dielectric film stack is controlled to be the same over the dense area and the open area of a substrate and solve...
7572728 Semiconductor device and method for manufacturing the same  
A semiconductor device and method with a dual damascene pattern uses buffer layers to prevent photoresist layer poisoning due to a reaction between an interlayer dielectric and a photoresist layer....
7569936 Semiconductor device and method of manufacturing the same  
A semiconductor device which is capable of avoiding an increase in pattern ratio and allowing wiring dummy patterns to improve global steps developed by CMP upon insertion of the dummy patterns...
7569908 Semiconductor device and method of manufacturing the same  
A semiconductor device including inductors with improved reliability and a method of manufacturing the same are provided. The semiconductor device may include a substrate, an insulating film...
7569476 Semiconductor integrated circuit device and a method of manufacturing the same  
In manufacturing a semiconductor integrated circuit device, an interconnect trench and a contact hole are formed in an interlayer insulating film formed over a first-level interconnect on a...
7566971 Semiconductor device and manufacturing method thereof  
The invention provides a technology for manufacturing a higher performance and higher reliability semiconductor device at low cost and with high yield. The semiconductor device of the invention has...
7564135 Semiconductor device having self-aligned contact and method of fabricating the same  
A semiconductor device includes a conductive pattern disposed on a substrate, a first interlayer dielectric layer disposed on the substrate and the conductive pattern, a first dummy pattern...