Matches 251 - 300 out of 2398 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >
Match Document Document Title
7411275 Semiconductor device comprising an inorganic insulating film and method of manufacturing the same  
It is an object to provide an insulating film having a very low dielectric constant and a great mechanical strength. Moreover, it is another object to provide a semiconductor device capable of...
7411822 Nonvolatile memory cell arrangement  
Memory transistors are arranged in a plurality of rows and columns. A first source/drain terminal of each memory transistor of a first column is connected to an electrically conductive conductor...
7411255 Dopant barrier for doped glass in memory devices  
A semiconductor device has a diffusion barrier formed between a doped glass layer and surface structures formed on a substrate. The diffusion barrier includes alumina and optionally a nitride, and...
7411302 Semiconductor device and a method of manufacturing the same and designing the same  
There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing...
7411295 Circuit board, device mounting structure, device mounting method, and electronic apparatus  
A circuit board has a metal pattern that is formed on a surface of the circuit board to be connected with bumps in two-dimensional arrangement for mounting an electronic device that has the bumps....
7405419 Unidirectionally conductive materials for interconnection  
A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie...
7405481 Glue layer for adhesion improvement between conductive line and etch stop layer in an integrated circuit chip  
In an integrated circuit chip, a conductive line is formed in a first IMD layer. The conductive line is formed of a conductive line material that tends to form an oxide when exposed to an...
7402513 Method for forming interlayer insulation film  
It is an object of the present invention to provide a method for forming an interlayer insulation film suppressing the occurrence of voids in the interlayer insulation film. A method for forming...
7402866 Backside contacts for MOS devices  
A semiconductor structure includes a semiconductor substrate having a first surface and a second surface opposite the first surface, a gate dielectric over the first surface of the semiconductor...
7402883 Back end of the line structures with liner and noble metal layer  
A back end of the line (BEOL) structure of a semiconductor device is presented. In one embodiment, the structure may include a first liner layer disposed on an intermediate interconnect structure,...
7402846 Electrostatic discharge (ESD) protection structure and a circuit using the same  
An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure includes an active device. The active device includes a plurality of drains. Each of the drains has...
7400044 Semiconductor integrated circuit device  
To improve a degree of integration and reliability of a semiconductor integrated circuit device. There are included third wire 14 arranged in the same layer as first wire 11 and second wire 12...
7400045 Semiconductor device and method for fabricating the same  
In a method for fabricating a semiconductor device, first, a first metal interconnect is formed in an interconnect formation region, and a second metal interconnect is formed in a seal ring region....
7400035 Semiconductor device having multilayer printed wiring board  
A semiconductor device includes a support body, a first substrate provided on a surface at one side of the support body, a second substrate provided on a surface at the other side of the support...
7400046 Semiconductor device with guard rings that are formed in each of the plural wiring layers  
A semiconductor IC device which includes a circuit region and a peripheral region on a main surface of a semiconductor substrate, a first insulating film formed over the main surface, external...
7400043 Semiconductor constructions  
The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H 2 , at...
7397117 Chip package with die and substrate  
A thin film semiconductor die circuit package is provided utilizing low dielectric constant (k) polymer material for the insulating layers of the metal interconnect structure. Five embodiments...
7397103 Semiconductor with damage detection circuitry  
Disclosed herein are novel damage detection circuitries implemented on the periphery of a semiconductor device. The circuitries disclosed herein enable the easy identification of cracks and...
7397125 Semiconductor device with bonding pad support structure  
A semiconductor device having bonding pads on a semiconductor substrate includes: an upper copper layer that is formed on the lower surface of the bonding pads with a barrier metal interposed and...
7397124 Process of metal interconnects  
A process of metal interconnects and a structure of metal interconnect produced therefrom are provided. An opening is formed in a dielectric layer. A metal layer is formed over the dielectric layer...
7393755 Dummy fill for integrated circuits  
A method and system are described to reduce process variation as a result of the electrochemical deposition (ECD), also referred to as electrochemical plating (ECP), and chemical mechanical...
7394155 Top and sidewall bridged interconnect structure and method  
An interconnect structure and its method for fabrication each employ an interconnect formed over and adjacent an active region of a semiconductor substrate. A gate electrode is also formed over the...
7394157 Integrated circuit and seed layers  
Structures are provided which improve performance in integrated circuits. The structures include a diffusion barrier and a seed layer in an integrated circuit both formed using a low energy ion...
7394137 Semiconductor device  
A semiconductor device including: a semiconductor layer; a gate insulating layer; a gate electrode; a channel region; a source region and a drain region; a guard ring region; an offset insulating...
7390742 Method for producing a rewiring printed circuit board  
The invention relates to a method for producing a rewiring printed circuit board with a substrate wafer having passage connections between a first and a second surface. One embodiment of the method...
7391116 Fretting and whisker resistant coating system and method  
A coated electrically conductive substrate has particular utility where there are multiple closely spaced leads and tin whiskers constitute a potential short circuit. This electrically conductive...
7391115 Semiconductor device and manufacturing method thereof  
An object of the present invention is to provide a semiconductor device which comprises a barrier film having a high etching selection ratio of the interlayer insulating film thereto, a good...
7391114 Electrode pad section for external connection  
A pad section serving as an electrode for external connection of a semiconductor device includes a first pad metal ( 61 ) formed in the top layer, a second pad metal ( 62 ) formed under the first...
7388289 Local multilayered metallization  
An interconnect comprises a trench and a number of metal layers above the trench. The trench has a depth and a width. The depth is greater than a critical depth, and the number of metal layers is a...
7387958 MMIC having back-side multi-layer signal routing  
A method includes providing a single crystal wafer having MMIC chips. Each chip has an active device in a first surface portion of a semiconductor substrate provided by the wafer and an electrical...
7388240 Non-volatile memory device capable of preventing damage by plasma charge  
A non-volatile memory device for preventing damage by plasma charges includes a gate electrode formed on a predetermined region of a semiconductor substrate, a source/drain region which is...
7388291 Semiconductor device and method of fabricating the same  
A semiconductor device having interconnects is reduced in leakage current between the interconnects and improved in the TDDB characteristic. It includes an insulating interlayer 108 , and...
7385289 Semiconductor device using inorganic film between wiring layer and bonding pad  
It is an object of the present invention to provide a semiconductor device that offers a desirable adhesiveness among the bonding pad, the second insulating layer and the insulating film, and that...
7384866 Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layer  
A metal interconnection of a semiconductor device is fabricated by forming a dielectric pattern including a hole therein on a substrate, and forming a barrier metal layer in the hole and on the...
7385290 Electrochemical reaction cell for a combined barrier layer and seed layer  
Methods and apparatus for forming conductive interconnect layers useful in articles such as semiconductor chips, memory devices, semiconductor dies, circuit modules, and electronic systems. An...
7384865 Semiconductor device with a metal line and method of forming the same  
A method of forming a metal line in a semiconductor device includes: forming a lower insulation layer for insulation from the lower substrate; forming a first metal line at a certain region on the...
7385241 Vertical-type capacitor structure  
Disclosed are a vertical-type capacitor and a formation method thereof. The capacitor includes a first electrode wall and a second electrode wall perpendicular to a semiconductor substrate, and at...
7382039 Edge seal for improving integrated circuit noise isolation  
An edge seal structure and fabrication method are described. The edge seal structure includes a high impedance substrate containing a base material and a grounded floating edge seal that is on the...
7382054 Method for forming self-aligned contacts and local interconnects simultaneously  
The present invention relates generally to semiconductors, and more specifically to semiconductor memory device structures and an improved fabrication process for making the same. The improved...
7382053 Power supply wiring structure  
Provided is a power supply wiring structure which comprises a first and a second power supply wirings, which are disposed on different planes to cross each other two-dimensionally. The first and...
7378739 Capacitor and light emitting display using the same  
A capacitor including a polysilicon layer doped with impurities to be conductive, a first dielectric layer formed on the polysilicon layer, a first conductive layer formed on the first dielectric...
7378738 Method for producing self-aligned mask, articles produced by same and composition for same  
A method for forming a self-aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material being...
7378740 Dual damascene structure for the wiring-line structures of multi-level interconnects in integrated circuit  
An improved dual damascene structure is provided for use in the wiring-line structures of multi-level interconnects in integrated circuit. In this dual damascene structure, low-K (low dielectric...
7378741 Semiconductor component and corresponding fabrication/mounting method  
A semiconductor component ( 1 ) has a substrate ( 21 ) and a structure ( 22, 23 ) formed from semiconductor/insulator/conductor layers ( 24 to 26 ) on/in the substrate ( 21 ). Furthermore, there...
7375389 Semiconductor device having a capacitor-under-bitline structure and method of manufacturing the same  
Provided are semiconductor devices having a system-on-chip (SOC) configuration that combines both a capacitor-based cell-array memory region and one or more MOS core/peripheral circuit/logic...
7375397 Semiconductor device having an SOI structure and method for manufacturing the same  
There is provided a semiconductor device in which the characteristic variations of a transistor and the degradation of a gate oxide layer are reduced during a WP process and a method for...
7372168 Semiconductor chip capable of implementing wire bonding over active circuits  
A semiconductor chip capable of implementing wire bonding over active circuits (BOAC) is provided. The semiconductor chip includes a bonding pad structure which includes a bondable metal pad, a top...
7371678 Semiconductor device with a metal line and method of forming the same  
A semiconductor device with a metal line and a method of forming the same. The method includes forming an insulation layer on a semiconductor substrate including a predetermined lower structure,...
7372152 Copper interconnect systems  
An integrated circuit (IC) may include a substrate, a first dielectric layer adjacent the substrate, and at least one trench in the first dielectric layer. The IC may also include a metal liner...
7372163 Semiconductor device and production method therefor  
A semiconductor device provided with: a first interconnection layer provided on a semiconductor substrate; an interlevel insulation film provided over the first interconnection layer; a second...
Matches 251 - 300 out of 2398 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >