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7615867 |
Thin-film transistor, method of manufacturing the same, liquid crystal display panel having the same and electro-luminescence display panel having the same
A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate...
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7615866 |
Contact surrounded by passivation and polymide and method therefor
A semiconductor device has contact between the last interconnect layer and the bond pad that includes a barrier metal between the bond pad and the last interconnect layer. Both a passivation layer...
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7615482 |
Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strength
Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or...
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7612456 |
Electronic device, semiconductor device using same, and method for manufacturing semiconductor device
An inventive electronic device includes a substrate, a bump of a first metal material provided on a surface of the substrate, a bonding film of a second metal material provided on a top surface of...
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7612453 |
Semiconductor device having an interconnect structure and a reinforcing insulating film
A semiconductor device includes in an interconnect structure which includes a first interconnect made of a copper-containing metal, a first Cu silicide layer covering the upper portion of the first...
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7612452 |
Method for manufacturing a semiconductor device and semiconductor device
A method for manufacturing a semiconductor device includes: the first step of forming, in an insulating film provided on a substrate, a recess that is porositized at least at inner walls; the...
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7612451 |
Reducing resistivity in interconnect structures by forming an inter-layer
An integrated circuit structure having improved resistivity and a method for forming the same are provided. The integrated circuit structure includes a dielectric layer, an opening in the...
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7611915 |
Methods of manufacturing light emitting diodes including barrier layers/sublayers
Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode...
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7605468 |
Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow
A method for forming conductive contacts and interconnects in a semiconductor structure, and the resulting conductive components are provided. In particular, the method is used to fabricate single...
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7601633 |
Semiconductor device and method for fabricating the same
A semiconductor device and fabricating method thereof are provided. A carbon interconnection line can be formed on an interlayer insulating layer such that the carbon interconnection line is...
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7598614 |
Low leakage metal-containing cap process using oxidation
An interconnect structure which includes a metal-containing cap located atop each conductive feature that is present within a dielectric material is provided in which a surface region of the...
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7598609 |
Structure of polymer-matrix conductive film and method for fabricating the same
A composite conductive film formed of a polymer-matrix and a plurality of conductive lines less than micro-sized and its fabricating method are provided. The conductive lines are arranged parallel...
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7586143 |
Semiconductor device
A substrate is provided with a first wiring layer 111 , an interlayer insulating film 132 on the first wiring layer 111 , a hole 112 A formed in the interlayer insulating film, a first metal...
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7573132 |
Wiring structure of a semiconductor device and method of forming the same
A wiring structure of a semiconductor device may have an insulation layer, a spacer and a plug. The insulation layer may be provided on a substrate and may have an opening through which a contact...
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7570336 |
Display device with piezoelectric material and method for fabricating the same
The present invention discloses a display device having a gate line and a data line crossing each other on a substrate to define a pixel region, a thin film transistor at each crossing of the gate...
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7566976 |
Semiconductor device and method for fabricating the same
A semiconductor device has a porous low-dielectric-constant film formed on a substrate and having an opening and a fine particle film composed of a plurality of aggregately deposited fine particles...
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7566975 |
Semiconductor device and method for manufacturing the same
A semiconductor device includes a semiconductor substrate, a copper-containing metal interconnect over the semiconductor substrate, and a copper-containing connection plug, and the metal...
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7566973 |
Semiconductor device and method of manufacturing the same
The method of manufacturing a semiconductor device according to the present invention includes: forming an interconnect trench in an insulating film formed on a semiconductor substrate (S 100 );...
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7566972 |
Semiconductor device and method for manufacturing the semiconductor device
A semiconductor device, comprises: a wiring formed on a first insulating film, a second insulating film formed on the first insulating film and on the wiring, a contact hole formed in the second...
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7564133 |
Semiconductor device and method for fabricating the same
A semiconductor device comprises: a lower interconnect formed over a semiconductor substrate; an insulating film formed on the lower interconnect; a via hole penetrating the insulating film to...
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7560816 |
Small grain size, conformal aluminum interconnects and method for their formation
A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN...
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7560815 |
Device structures including ruthenium silicide diffusion barrier layers
A device structure including a substrate assembly having a surface. A diffusion barrier layer is formed over at least a portion of the surface. The diffusion barrier layer is formed of RuSi x ,...
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7560814 |
Semiconductor device that improves electrical connection reliability
A semiconductor device including: a semiconductor section in which an element is formed; an insulating layer formed on the semiconductor section; an electrode pad formed on the insulating layer; a...
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7557446 |
Semiconductor device and a fabrication process thereof
A semiconductor device formed by the steps of forming a contact hole in an insulation film so as to extend therethrough and so as to expose a conductor body at a bottom part of the contact hole,...
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7554176 |
Integrated circuits having a multi-layer structure with a seal ring
A plurality of IC regions are formed on a semiconductor wafer, which is cut into individual chips incorporating ICs, wherein wiring layers and insulating layers are sequentially formed on a silicon...
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7550822 |
Dual-damascene metal wiring patterns for integrated circuit devices
Methods of forming dual-damascene metal wiring patterns include forming a first metal wiring pattern (e.g., copper wiring pattern) on an integrated circuit substrate and forming an etch-stop layer...
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7547972 |
Laminated structure, very-large-scale integrated circuit wiring board, and method of formation thereof
The laminated structure includes a substrate of low dielectric constant material of silicon compound and an electroless copper plating layer laminated thereon with a barrier layer. The barrier...
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7545041 |
Techniques for patterning features in semiconductor devices
Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical...
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7545040 |
Copper alloy for wiring, semiconductor device, method for forming wiring and method for manufacturing semiconductor device
A wiring metal contains a polycrystal of copper (Cu) as a primary element and an additional element other than Cu, and concentration of the additional element is, at crystal grain boundaries...
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7544986 |
System including integrated circuit structures formed in a silicone ladder polymer layer
A method of forming integrated circuit structures, such as capacitors and conductive plugs, within contact openings formed in a photosensitive silicone ladder polymer (PVSQ) is disclosed. Contact...
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7541675 |
Semiconductor device including fluorine diffusion barrier layer and method for manufacturing the same
A semiconductor device including a fluorine diffusion barrier layer and a method for manufacturing the same are provided. The semiconductor device includes a specific pattern formed over a...
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7538434 |
Copper interconnection with conductive polymer layer and method of forming the same
A conductive polymer between two metallic layers acts a glue layer, a barrier layer or an activation seed layer. The conductive polymer layer is employed to encapsulate a copper interconnection...
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7535095 |
Printed wiring board and method for producing the same
The present invention has for its object to provide a multilayer printed circuit board which is very satisfactory in fracture toughness, dielectric constant, adhesion and processability, among...
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7531902 |
Multi-layered metal line of semiconductor device having excellent diffusion barrier and method for forming the same
A multi-layered metal line of a semiconductor device has a lower metal line and an upper metal line. The upper metal line includes a diffusion barrier, which is made of a stack of a first WN x ...
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7531901 |
Metal interconnection of semiconductor device and method for forming the same
A metal interconnection of a semiconductor device and a method for forming the same include a diffusion barrier having favorable EM (electro migration) and SM (stress induced migration) properties,...
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7528430 |
Electronic systems
The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the...
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7525197 |
Barrier process/structure for transistor trench contact applications
A barrier architecture is provided that includes different materials that are selected to be employed in connection with copper contact applications. Some of the barrier material is formed over...
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7525196 |
Protection of seedlayer for electroplating
The present invention includes a method of providing a substrate; sequentially forming a seed layer over the substrate and forming a protection layer over the seed layer; and sequentially removing...
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7511349 |
Contact or via hole structure with enlarged bottom critical dimension
An integrated circuit chip includes a buffer layer, an underlying layer, a dielectric layer, a hole, and barrier layer. The buffer layer is over the underlying layer. The dielectric layer is over...
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7508082 |
Semiconductor device and method of manufacturing the same
There is provided a solution to the problem of the poor adhesion in the pad portion while inhibiting the dishing in the pad portion. An SiON film, which covers insulating areas and has an opening...
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7507988 |
Semiconductor heterostructure including a substantially relaxed, low defect density SiGe layer
A heterostructure is provided which includes a substantially relaxed SiGe layer present atop an insulating region that is located on a substrate. The substantially relaxed SiGe layer has a...
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7507660 |
Deposition processes for tungsten-containing barrier layers
In one embodiment, a method for forming a barrier material on a substrate is provided which includes exposing a dielectric layer on the substrate to a plasma during a preclean process, wherein the...
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7504725 |
Semiconductor memory device having low-resistance tungsten line and method of manufacturing the semiconductor memory device
A semiconductor memory device and a method of manufacturing the semiconductor memory device, in which a bit line can have a low resistance without an increase in the thickness of the bit line. In...
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7504674 |
Electronic apparatus having a core conductive structure within an insulating layer
Electronic devices are constructed by a method that includes forming a first conductive layer in an opening in a multilayer dielectric structure supported by a substrate, forming a core conductive...
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7494867 |
Semiconductor device having MIM capacitive elements and manufacturing method for the same
A method for manufacturing a semiconductor device is provided. The method includes forming a lower interconnection on a semiconductor substrate; forming a first interlayer insulation film in which...
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7488679 |
Interconnect structure and process of making the same
A method of forming an interconnect structure in an inter-layer dielectric (ILD) material, the method include the steps of creating one or more via openings in the ILD material; forming a first...
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7485970 |
Semiconductor package substrate having contact pad protective layer formed thereon
A semiconductor package substrate and a method for fabricating the same are proposed. An insulating layer has a plurality of blind vias to expose inner traces underneath the insulating layer. A...
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7485961 |
Approach to avoid buckling in BPSG by using an intermediate barrier layer
A method is disclosed for reducing the effects of buckling, also referred to as cracking or wrinkling in multilayer heterostructures. The present method involves forming a planarization layer...
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7485935 |
Semiconductor memory device
A semiconductor memory device is provided with plural memory cells, plural bit lines BL, each bit line being commonly connected to the plural memory cells that are arranged in the same row, plural...
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7485516 |
Method of ion implantation of nitrogen into semiconductor substrate prior to oxidation for offset spacer formation
A method of formation of integrated circuit devices includes forming a gate electrode stack over a portion of a semiconductor. The stack includes a gate dielectric layer with a gate electrode...
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