Matches 701 - 750 out of 978 < 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 >
Match Document Document Title
5410183 Contact structure of semiconductor device and method of manufacturing the same  
A contact structure of a semiconductor device comprises a lamination of at least first insulating film, first conductive film and second insulating film formed in that order a through hole formed...
5408130 Interconnection structure for conductive layers  
An interconnect structure is formed having a substrate (10). A conductive layer (14) is formed overlying the substrate (10). A conductive layer (18) is formed overlying the conductive layer (14)....
5404046 Flat semiconductor wiring layers  
The semiconductor circuit device is provided with a first wiring layer connected to a semiconductor substrate through a contact hole in an insulation film formed on a main surface of the...
5373192 Electromigration resistance metal interconnect  
A semiconductor device is provided which includes a conductive layer, an insulating film formed on the surface of the conductive layer, and a conductive metal interconnection layer formed on the...
5371410 Integrated circuit metallization with zero contact enclosure requirements  
A method for forming aluminum metallization for contacting a conductive element in an integrated circuit, and an integrated circuit formed according to the same, is disclosed. According to a first...
5347161 Stacked-layer structure polysilicon emitter contacted p-n junction diode  
A process is used to fabricate diodes having an emitter contacted p-n junction. A stack of n + -type polysilicon layers are formed one upon the other upon a p-type silicon substrate. In an...
5345108 Semiconductor device having multi-layer electrode wiring  
A semiconductor device having an electrode wiring which prevents generation of hillock and has good stress migration capability is disclosed. A multi layer film including at least two Al-Si-Cu...
5343073 Lead frames having a chromium and zinc alloy coating  
There is provided a lead frame with enhanced adhesion to a polymer resin. The lead frame is coated with a thin layer of containing a mixture of chromium and zinc. A mixture of chromium and zinc...
5341026 Semiconductor device having a titanium and a titanium compound multilayer interconnection structure  
A semiconductor integrated circuit device has an interconnection structure in which multilayer aluminum interconnection layers are connected through connection holes. A first aluminum...
5338975 High density interconnect structure including a spacer structure and a gap  
A high frequency electronic component which is interconnected with other components through a high density interconnect structure sees only an air dielectric constant in the high density...
5336929 Semiconductor structure and method for fabricating the same  
A semiconductor structure according to the present invention includes a diffusion preventing layer for preventing a diffusion of a brazing metal layer, for instance, Au/In. The structure is...
5332913 Buried interconnect structure for semiconductor devices  
An improved density semiconductor device having a novel buried interconnect is described. The buried interconnect electrically connects electrical device regions on a semiconductor substrate such...
5331204 Integrated circuit package in which impendance between signal pads and signal lines is matched by reducing the size of a ground plane  
An object of the present invention is to match impedance of each portion of whole lines of a signal wiring with the integrated circuit mounted on the package. All ground planes are deleted within a...
5327011 Semiconductor device with enhanced via or contact hole connection between an interconnect layer and a connecting region  
A semiconductor device has an interconnect layer, connected to a connecting region, such as a diffusion region or layer formed on the surface of a substrate, through a contact hole formed in an...
5323022 Platinum ohmic contact to p-type silicon carbide  
A method and resulting ohmic contact structure between a high work function metal and a wide bandgap semiconductor for which the work function of the metal would ordinarily be insufficient to form...
5319241 Lead frame without power buses for lead on chip package, and a semiconductor device with conductive tape power distribution  
A conductive tape for a packaged semiconductor device is disclosed. The tape contains a first adhesive layer, a base film on top of the first adhesive layer, a conductive layer on top of the base...
5319245 Local interconnect for integrated circuits  
A method for fabrication of local interconnects in an integrated circuit, and an integrated circuit formed according to the same, is disclosed. According to the disclosed embodiment, a first and a...
5317192 Semiconductor contact via structure having amorphous silicon side walls  
A method is provided for forming an integrated circuit contact structure. A conductive region is formed on a semiconductor device. Thereafter an insulating layer is formed over the conductive...
5316974 Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer  
An improved metallized structure (10) is formed from a copper seed layer (46) and a copper structure (48). Semiconductor devices to be connected (16-18) are covered by a conductive barrier layer...
5315157 Semiconductor integrated circuit device having voltage level converting circuits  
A semiconductor integrated circuit device is provided which comprises circuit blocks driven at different power source voltages and voltage level converting circuits for converting the voltage level...
5309023 Contact structure for interconnection in semiconductor devices and manufacturing method thereof  
A contact structure for interconnection in semiconductor devices provides electrical contact between an impurity-diffused region formed in a silicon substrate and a polycrystalline silicon layer...
5306950 Electrode assembly for a semiconductor device  
An electrode assembly for a semiconductor device includes a contact layer formed on a semiconductor substrate and consisting mainly of a rare-earth metal or metals, or a silicide thereof, or a...
5306943 Schottky barrier diode with ohmic portion  
A Schottky barrier diode includes a semiconductor substrate, an ohmic electrode formed on a first region of the semiconductor substrate, and a Schottky metal electrode formed on a second region...
5304843 Semiconductor device using film carrier  
A semiconductor device, which uses a film carrier, comprises a semiconductor element with a plurality of terminals, a resin film with a first surface and a second surface, the film having a hole in...
RE34583 Method of forming a configuration of interconnections on a semiconductor device having a high integration density  
A method of the kind consisting in that a contact is obtained with an active zone (11) carried by a semiconductor substrate (10) by means of conductive contact studs (18a) located in the contact...
5294834 Low resistance contacts for shallow junction semiconductors  
A method of enhancing the specific contact resistivity in InP semiconductor devices and improved devices produced thereby are disclosed. Low resistivity values are obtained by using gold ohmic...
5294836 Semiconductor device having a wiring strip of noble metal and process of fabricating the semiconductor device  
A multi-level wiring structure interconnects circuit components of an integrated circuit fabricated on a semiconductor substrate, and comprises a lower wiring of noble metal covered with an...
5293073 Electrode structure of a semiconductor device which uses a copper wire as a bonding wire  
A semiconductor device comprises a semiconductor substrate, a first insulation film formed on the semiconductor substrate, a metal film for forming a bonding pad on the first insulation film, and a...
5291066 Moisture-proof electrical circuit high density interconnect module and method for making same  
A moisture-proof integrated circuit module includes at least one integrated circuit component in a high density interconnect (HDI) structure fabricated by applying to a substrate successive...
5289035 Tri-layer titanium coating for an aluminum layer of a semiconductor device  
A tri-layer titanium coating for an aluminum layer of a semiconductor device. An aluminum layer used for interconnecting individual devices of an integrated circuit is formed on a semiconductor...
5287002 Planar multi-layer metal bonding pad  
A planarized multi-layer metal bonding pad. A first metal bonding pad layer (13) that defines a metal bonding pad is provided. A first dielectric layer (14) is provided with a multitude of vias...
5278450 Semiconductor contact with discontinuous noble metal  
A semiconductor device with a monocrystalline silicon body (1) is provided with a dielectric layer (2) with contact holes (3) through which the silicon body (1) is contacted with an aluminum...
5278431 Diamond rectifying contact with undoped diamond layer  
A rectifying contact includes a first semiconducting diamond layer, a second undoped diamond layer on the first layer, and a third relatively highly doped diamond layer on the second layer. The...
5274268 Electric circuit having superconducting layered structure  
An electric circuit is provided on a semiconductor substrate with a supercoducting film. The surfaces being in contact with the superconducting film are made of heat-resistant non-oxide insulating...
5262846 Contact-free floating-gate memory array with silicided buried bitlines and with single-step-defined floating gates  
A contact-free floating-gate non-volatile memory cell array and process with silicided NSAG bitlines and with source/drain regions buried beneath relatively thick silicon oxide. The bitlines have a...
5258643 Electrically programmable link structures and methods of making same  
Methods and systems are disclosed for fabricating electrically programmable link structures by fabricating a first conductor, which comprises a refractory conductive material, then fabricating an...
5248903 Composite bond pads for semiconductor devices  
Bond pad lift problems encountered during bonding are alleviated by providing an upper bond pad, a lower bond pad and an insulating component between the upper and lower bond pads. At least one...
5243220 Semiconductor device having miniaturized contact electrode and wiring structure  
A contact hole in a diffusion region is narrowed by a buffer layer formed at about the middle of an interlayer insulating film in its thickness direction. This buffer layer serves as effective...
5235496 Device for packaging integrated circuits  
The device comprises at least one printed circuit board (11,12) on which is fixed a heightening board (15) comprising at least one opening (16) for forming with the surface of the printed circuit...
5231306 Titanium/aluminum/nitrogen material for semiconductor devices  
A barrier material for use in preventing interdiffusion of silicon and aluminum at silicon/aluminum interfaces comprises a layer of titanium, aluminum, and nitrogen between about 100Å and 1000Å...
5227812 Liquid jet recording head with bump connector wiring  
In the wiring portion in the wiring substrate constituting a recording head of a liquid jet type recording apparatus, two electroconductive layers are connected through a protective layer that...
5225711 Palladium enhanced soldering and bonding of semiconductor device contacts  
The fluxless bonding in a reducing atmosphere of integrated circuit contacts containing copper is enhanced using a layer of 200 to 1500 Angstrom thick palladium which inhibits copper oxide...
5223746 Packaging structure for a solid-state imaging device with selectively aluminium coated leads  
A packaging structure is provided which is especially useful for solid-state imaging devices and other semiconductor devices. An Al film is selectively formed on inner lead portions and portions of...
5216281 Self sealed aligned contact incorporating a dopant source  
In a contact structure to a source/drain region (28) nearby a gate electrode (22), a contact sidewall through a thick dielectric is laterally displaced away from the S/D region to widen the...
5213877 Ceramic substrate used for fabricating electric or electronic circuit  
A ceramic substrate is used for an electric or electronic circuit, and comprises a ceramic foundation and at least one conductive island formed of aluminum or an aluminum alloy and bonded to one...
5214416 Active matrix board  
An active matrix board comprising: an electrically insulating transparent substrate; a pixel electrode disposed in two dimensions on the substrate for each pixel; a scanning electrode arranged in...
5210682 Radial type of parallel system bus structure having pairs of conductor lines with impedance matching elements  
An improvement in a radial-and-parallel bus structure which includes a stack assembly of bus-printed disks whose centers are arranged on common center axis. Each bus-printed disk consists of a disk...
5200808 Semiconductor device having smooth contact holes formed through multi-layer insulators of different etching speeds  
Disclosed is a method of manufacturing a semiconductor device of a multi-layer film structure. A gate electrode having a connection portion is formed on a semiconductor substrate. An underlying...
5194932 Semiconductor integrated circuit device  
A semiconductor integrated circuit device includes an internal circuit, input and output signal pads, a power source pad and a plurality of ground pads, a ground pattern, and a power source...
5192989 Lateral DMOS FET device with reduced on resistance  
A lateral DMOS FET device which has a small on resistance. The device includes a cell structure formed by a plurality of unit cells, each unit cell including: a source region of first conduction...
Matches 701 - 750 out of 978 < 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 >