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7633148 |
Semiconductor device with semiconductor chips mounted on mounting board via conductive anaotubes
A plurality of conductive pads ( 2 ) are formed on a mounting surface of a mounting board. Conductive pads ( 11 ) are formed on a principal surface of a semiconductor chip ( 10 ) at positions...
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7601633 |
Semiconductor device and method for fabricating the same
A semiconductor device and fabricating method thereof are provided. A carbon interconnection line can be formed on an interlayer insulating layer such that the carbon interconnection line is...
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7550849 |
Conductive structures including titanium-tungsten base layers
Methods may be provided for forming an electronic device including a substrate, a conductive pad on the substrate, and an insulating layer on the substrate wherein the insulating layer has a via...
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7541670 |
Semiconductor device having terminals
The power semiconductor package includes a semiconductor mounting substrate, a mother case having an opening and containing the semiconductor mounting substrate therein, a securing member having a...
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7501694 |
Semiconductor device using multi-layer unleaded metal plating, and method of manufacturing the same
A semiconductor device comprises a semiconductor integrated circuit, an external connection terminal connecting the semiconductor integrated circuit to an external device, and a plurality of tin or...
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7501692 |
Semiconductor lead frame, semiconductor package having the same, and method of plating the same
Provided are a semiconductor lead frame, a semiconductor package having the semiconductor lead frame, and a method of plating the semiconductor lead frame. The method includes preparing a substrate...
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7495314 |
Ohmic contact on p-type GaN
An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type...
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7449782 |
Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby
A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided....
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7420227 |
Cu-metalized compound semiconductor device
The present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production.
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7414313 |
Polymeric conductor donor and transfer method
The present invention relates to a donor laminate for transfer of a conductive layer comprising at least one electronically conductive polymer on to a receiver, wherein the receiver is a component...
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7411259 |
Wiring material and a semiconductor device having a wiring using the material, and the manufacturing method thereof
An object of the present invention is to realize a semiconductor device having a high TFT characteristic. In manufacturing an active matrix display device, electric resistivity of the electrode...
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7411298 |
Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices
A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture...
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7411223 |
Compound electrodes for electronic devices
A compound electrode comprises a first layer that comprises at least one halide compound of at least one metal selected from the group consisting of alkali metals and alkaline-earth metals; and a...
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7385287 |
Preventing damage to low-k materials during resist stripping
A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer....
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7382050 |
Semiconductor device and method for producing the same
A semiconductor device includes a tape carrier substrate having a flexible insulating film base, a plurality of conductor wirings provided on the film base, and wiring bumps respectively formed so...
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7332810 |
Integrated circuit device and method of producing the same
An integrated circuit device having vias having good resistance to migration causing the breaking of a wiring line, or an integrated circuit device having a wiring structure that is fined by...
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7291558 |
Copper interconnect wiring and method of forming thereof
Capping layer or layers on a surface of a copper interconnect wiring layer for use in interconnect structures for integrated circuits and methods of forming improved integration interconnection...
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7285842 |
Siloxane epoxy polymers as metal diffusion barriers to reduce electromigration
Structures employing siloxane epoxy polymers as diffusion barriers adjacent conductive metal layers are disclosed. The siloxane epoxy polymers exhibit excellent adhesion to conductive metals, such...
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7243424 |
Production method for a multilayer ceramic substrate
An object of the invention is to connect different dielectrics electrically to each other in the direction of main surface of a sheet in a multilayer ceramic substrate and to increase the degree of...
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7244635 |
Semiconductor device and method of manufacturing the same
There are included a semiconductor substrate provided with a desirable element region, an electrode pad formed to come in contact with a surface of the semiconductor substrate or a wiring layer...
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7242034 |
Method for fabricating a component having an electrical contact region, and component having an electrical contact region
A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in...
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7233068 |
Filling small dimension vias using supercritical carbon dioxide
Suitable particles may be deposited within an extremely small high-aspect ratio via by flowing the particles in a suspension using supercritical carbon dioxide. The particles may be made up of...
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7190075 |
Method of forming smooth polycrystalline silicon electrodes for molecular electronic devices
A method is provided for forming smooth polycrystalline silicon electrodes for molecular electronic devices. The method comprises: depositing a silicon layer in an amorphous form; forming a native...
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7181831 |
Method of manufacturing strain sensor
A strain sensor comprising a metal substrate, a first electrode provided on the metal substrate, a glass layer formed on the first electrode, and a second electrode and a strain detecting resistor...
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7166921 |
Aluminum alloy film for wiring and sputter target material for forming the film
Disclosed is an Al alloy film for wiring, which consists of, by atom, 0.2 to 1.5% Ge and 0.2 to 2.5% Ni and the balance being essentially Al, wherein a total amount of Ge and Ni is not more than...
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7160820 |
Method of preparing oxide crystal film/substrate composite and solution for use therein
There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid...
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7161247 |
Polishing composition for noble metals
The invention provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising a noble metal, the polishing composition comprising (a) an oxidizing agent...
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7151313 |
Method of forming wirings for tile-shaped elements, structures of wirings for tile-shaped elements, and electronic equipment
Methods are provided to form wirings for tile-shaped elements, structures of wirings for tile-shaped elements, and electronic equipment, with which highly reliable electrical wirings having minute...
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7135776 |
Semiconductor device and method for manufacturing same
A technology for inhibiting the dielectric breakdown occurred in a semiconductor device is provided. A semiconductor device includes a semiconductor substrate (not shown), an interlayer insulating...
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7115991 |
Method for creating barriers for copper diffusion
A barrier layer for a semiconductor device is provided. The semiconductor device comprises a dielectric layer, an electrically conductive copper containing layer, and a barrier layer separating the...
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7084501 |
Interconnecting component
The wide usable interconnecting component of the present invention is capable of reducing number of components or electric elements and reducing number of interconnecting sections without limiting...
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7081676 |
Structure for controlling the interface roughness of cobalt disilicide
A method of producing electrical contacts having reduced interface roughness as well as the electrical contacts themselves are disclosed herein. The method of the present invention comprises (a)...
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7078820 |
Semiconductor apparatus and process of production thereof
A process of production of a semiconductor apparatus which can suppress a rise in the electrical resistance and a decline in the joint strength at the bump connection interfaces and improve the...
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7069641 |
Method for preparing composite materials of a positive temperature coefficient thermistor
The present invention discloses a method for preparing a conductive polymeric composite material having carbon black utilized to a structure for composite materials of a positive temperature...
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7052922 |
Stable electroless fine pitch interconnect plating
A method and apparatus for plating facilitates the plating of a small contact feature of a wafer die while providing a relatively stable plating bath. The method utilizes a supplemental plating...
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7030451 |
Method and apparatus for performing nickel salicidation
A method and apparatus for performing nickel salicidation is disclosed. The nickel salicide process typically includes: forming a processed substrate including partially fabricated integrated...
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7026716 |
Self-assembled sub-nanolayers as interfacial adhesion enhancers and diffusion barriers
An electrical device is disclosed. The electrical device includes a substrate, and a self-assembled molecular layer on the substrate. The self-assembled molecular layer comprises a plurality of...
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7023030 |
MISFET
A metal insulator semiconductor field effect transistor (MISFET) is disclosed comprising a source layer being made with a material having a source band-gap (EG 2 ) and a source mid-gap value (EGM 2...
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7009298 |
Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer
A contact structure is provided incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe...
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6993828 |
Method for manufacturing metal thin film resistor
A metal resistor and a method for manufacturing the resistor are provided. A first insulation film is formed on a substrate, a photosensitive film is applied on the insulation film, and an...
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6991854 |
Gold alloy bonding wire for semiconductor device
A gold (Au) alloy bonding wire for a semiconductor device is provided. The Au alloy bonding wire is manufactured by adding at least one of polonium (Po), promethium (Pm), thulium (Tm), and boron...
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6989608 |
Method and apparatus to eliminate galvanic corrosion on copper doped aluminum bond pads on integrated circuits
The present invention is an electronic interconnect comprising a bond pad consisting essentially of aluminum and copper and configured for use in semiconductor electronic devices to couple a bond...
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6984875 |
Semiconductor device with improved reliability and manufacturing method of the same
A semiconductor device includes an insulating layer, a conducting portion, and a modified layer. The insulating layer is formed on a semiconductor substrate. The conducting portion is formed in the...
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6975031 |
Semiconductor device and chip carrier
There are provided a carrier substrate, a temperature sensing resistor film formed directly on the carrier substrate, first and second conductive patterns formed on the carrier substrate and...
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6946735 |
Side-wall barrier structure and method of fabrication
The invention includes a wafer having a poly silicon plug passing through a CP-contact. The poly silicon plug is formed from a relatively heavily doped poly silicon layer and a relatively lightly...
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6940173 |
Interconnect structures incorporating low-k dielectric barrier films
The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween, where the ceramic diffusion barrier has a...
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6930391 |
Method for alloy-electroplating group IB metals with refractory metals for interconnections
An electroplated metal alloy including at least three elements. A multilayer interconnection structure that includes a substrate that is an interior of the interconnection structure, a conductive...
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6921970 |
Package for electronic parts, lid thereof, material for the lid and method for producing the lid material
A lid material ( 1 ) according to the present invention comprises: a base layer ( 2 ) composed of a low thermal expansion metal; an intermediate metal layer ( 3 ) provided on one surface of the...
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6882051 |
Nanowires, nanostructures and devices fabricated therefrom
One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline...
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6876082 |
Refractory metal nitride barrier layer with gradient nitrogen concentration
Within a microelectronic fabrication and a method for fabricating the microelectronic fabrication a barrier layer is formed over a substrate. Within the method and the microelectronic fabrication...
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