Matches 401 - 450 out of 622 < 1 2 3 4 5 6 7 8 9 10 11 12 13 >
Match Document Document Title
5923540 Semiconductor unit having semiconductor device and multilayer substrate, in which grounding conductors surround conductors used for signal and power  
A semiconductor device has an electrical circuit and a grounding terminal. A multilayer substrate has a plurality of insulator layers and conductor layers in a stacked arrangement and a surface...
5920119 Power semiconductor module employing metal based molded case and screw fastening type terminals for high reliability  
A power semiconductor module having a power circuit unit; a metal base for sealing the bottom of the module; an insulation substrate for electrically insulating the metal base from the power...
5917241 High frequency semiconductor device having source, drain, and gate leads  
A high frequency semiconductor device includes a molded resin package having side surfaces; a source lead for die-bonding, having a thickness, partially disposed within the package, and penetrating...
5917233 Integrated circuit having a parasitic resonance filter  
A packaged integrated circuit configured for interconnection to an external component comprises a die (1) having a high frequency contact (8), the die (1) being disposed on a lead frame (3). The...
5913134 Micromachined self packaged circuits for high-frequency applications  
A micromachined self-packaged circuit provides at least partial shielding of a circuit element. Preferably, all the elements comprising a circuit are completely shielded between a first wafer of...
5892272 Integrated circuit with on-chip ground base  
An integrated circuit includes a ground plane structure which provides a uniform ground potential throughout the integrated circuit and improves its performance. The ground plane structure is...
5889232 Ultrahigh-frequency electronic component  
An ultrahigh-frequency electronic component has an ultrahigh-frequency chip encased in a molded-resin package. The ultrahigh-frequency electronic component includes a first sealing layer encasing...
5877555 Direct contact die attach  
A semiconductor die is attached to a transistor package by a plurality of resilient clamping members, which are bonded at one end to a top surface of the semiconductor die and at another end to a...
5869903 Sealed semiconductor device including opposed substrates and metal wall  
A semiconductor device includes a circuit substrate having a first surface on which a high-frequency circuit is located; a first metal layer disposed on a second surface of the circuit substrate;...
5869898 Lead-frame having interdigitated signal and ground leads with high frequency leads positioned adjacent a corner and shielded by ground leads on either side thereof  
A lead-frame is sealed in a full-mold insulating package together with a semiconductor chip; the lead-frame has a conductive die pad for mounting the semiconductor chip, first conductive leads...
5869894 RF IC package  
The specification describes a MCM IC package with improved RF grounding. The package has at least one RF IC chip bonded to an interconnect substrate and the substrate is interconnected to an...
5852391 Microwave/millimeter-wave functional module package  
A high-performance low-cost functional module package handles microwaves or millimeter waves. The package has multilayered dielectric substrates, signal through holes (25, 28) connected to signal...
5847453 Microwave circuit package  
A microwave circuit package includes a metallic base plate on which are mounted a plurality of monolithic microwave integrated circuits (MMICs) and a spacer, made of a dielectric material,...
5844321 Semiconductor device comprising a chip which is provided with a via opening and is soldered on a support, and method of realizing this device  
A semiconductor device comprises a chip soldered to a support. The chip comprises a semiconductor substrate, a via a ground plane on a rear surface, and an anti-adhesion layer deposited...
5841184 Integrated emitter drain bypass capacitor for microwave/RF power device applications  
A silicon bipolar junction transistor in integrated form is disclosed having a ballast resistance integrated onto a silicon chip. This resistance is for the purpose of thermal stability. In...
5838551 Electronic package carrying an electronic component and assembly of mother board and electronic package  
Electronic package with an electronic component mounted upon a PCB or ceramic substrate by first level interconnects and housing second level interconnects on the other side of the PCB. The...
5838031 Low noise-high linearity HEMT-HBT composite  
4-terminal HEMT-HBT composite devices, based upon monolithically integrated HEMT-HBT technology and configured in various topologies, are useful in a wide range of applications which currently...
5831489 Compact magnetic shielding enclosure with high frequency feeds for cryogenic high frequency electronic apparatus  
Operating high frequency cryogenic superconductor devices requires an enclosure that permits application of wide band RF signals from an external source to the superconductor device while...
5796165 High-frequency integrated circuit device having a multilayer structure  
A multilayer structure composed of a plurality of substrates stacked in layers is provided with a cavity formed by partially removing some of the substrates. A semiconductor chip internally...
5793098 Package including conductive layers having notches formed  
In a package including a substrate, a conductive layer formed within the substrate, an internal lead element connected via a first throughhole to the conductive layer, and an external lead element...
5789817 Electrical apparatus with a metallic layer coupled to a lower region of a substrate and a metallic layer coupled to a lower region of a semiconductor device  
An electrical apparatus having a first substrate, a first metallic layer, a semiconductor device, a second metallic layer, and a metallic interconnecting structure is described. The first substrate...
5773897 Flip chip monolithic microwave integrated circuit with mushroom-shaped, solder-capped, plated metal bumps  
Mushroom-shaped, solder-capped, small-diameter (approximately 50 to 75 microns or less), metal bumps are used in the flip chip monolithic microwave integrated circuits (MMICs) attachment process to...
5773887 High frequency semiconductor component  
A high frequency semiconductor component (10) includes a first substrate (12) having a first surface (13) opposite a second surface (14), a first electrically conductive layer (16) supported by the...
5768109 Multi-layer circuit board and semiconductor flip chip connection  
A multi-layer circuit board (11) has a cofired ceramic with a configuration of circuit traces (27) extending though differing layers of the multi-layer circuit board (11) to facilitate mountable...
5767569 Tab tape and semiconductor chip mounted on tab tape  
The method for mounting a semiconductor chip comprises disposing conductive thermoplastic polyimide as a bonding material between an inner lead of the TAB tape and an external connecting electrode...
5760473 Semiconductor package having a eutectic bonding layer  
A package for a backside-ground high power transistor comprises a metal base, a flat insulator layer on the base defining a window for receiving the transistor and a pair of flat metal layer bonded...
5757074 Microwave/millimeter wave circuit structure with discrete flip-chip mounted elements  
A microwave/millimeter wave circuit structure supports discrete circuit elements by flip-chip mounting to an interconnection network on a low cost non-ceramic and non-semiconductor dielectric...
5753972 Microelectronics package  
A microelectronic package suitable for high-frequency microelectronic devices includes a base which is at least partially conductive attached to an RF substrate with a cavity formed at its center...
5744869 Apparatus for mounting a flip-chip semiconductor device  
A laser-tunable semiconductor device assembly (LSDA) is provided for electrical connection between multiple semiconductor devices (101, 103) within a RF transistor (100). The LSDA (100) provides...
5736787 Transistor package structured to provide heat dissipation enabling use of silicon carbide transistors and other high power semiconductor devices  
A package for relatively high power transistors including heat conducting mounting flange having a relatively large "footprint" relative to the area covered by at least one active chip supported...
5736913 Method and apparatus for providing grounding to microwave circuit by low impedance means  
Low impedance means are provided for coupling a common circuit ground of a microwave circuit to the ground potential. The low impedance means include a plurality of resonators, each having a...
5734193 Termal shunt stabilization of multiple part heterojunction bipolar transistors  
Structure and fabrication details are disclosed for AlGaAs/GaAs microwave HBTs having improved thermal stability during high power operation. The use of a thermal shunt joining emitter contacts of...
5717249 RF power amplifying circuit device  
A plurality of ceramic substrates are stacked in layers to form a multilayer structure. A semiconductor chip having an FET or the like is mounted on the uppermost first ceramic substrate to form an...
5698898 Semiconductor apparatus with a multiple element electrode structure  
A bolt (42a) is connected to a copper plate (9a) by a first electrode (51a), a second electrode (52a) and a wire (10a) for connecting the first and second electrodes. Similarly, a bolt (42b) is...
5694300 Electromagnetically channelized microwave integrated circuit  
A multi-chip module (10) has a plurality of functional circuits each disposed within its own cavity (15-18), each cavity separated from the other by isolation channels (20, 21). Each functional...
5689138 Integrated microwave semiconductor device with active and passive components  
A semiconductor device for microwave frequencies with a substrate which is provided at a first side with a semiconductor element, a passive element, and a pattern of conductive elements, while the...
5677570 Semiconductor integrated circuit devices for high-speed or high frequency  
A semiconductor integrated circuit device is provided for high-frequency or high-speed circuitry having stabilized characteristics and reduced influence on surrounding devices. In the device...
5675184 Integrated circuit device  
An integrated circuit device includes a substrate; circuit elements including an active element and a bias line for applying a DC bias voltage to the active element, disposed on the substrate; a...
5668408 Pin grid array solution for microwave multi-chip modules  
A module technology allows a PGA like package architecture to be used in microwave instruments and other high frequency systems where high isolation, low reflection, and low cost multi-chip modules...
5663095 Method of making a micro-dimensional coupling conductor  
A micro-dimensional coupling conductor with a shape that is customized for a particular electronic device. A fabrication method is used in which the physical dimensions of the conductor are...
5661343 Power hybrid integrated circuit apparatus  
An input-output wiring for the power circuit and a ground layer are formed on a metal substrate of a power hybrid integrated circuit apparatus. A plurality of windows are opened at predetermined...
5652696 Mechanically captivated integrated circuit chip  
A high frequency microwave integrated circuit assembly (14,20) includes a fragile monolithic microwave integrated circuit (MMIC) chip (22) mounted in an MMIC subassembly (20) that is completely...
5650760 Microwave enclosure  
Microwave ports and low-frequency ports of a microwave enclosure are configured to realize high return losses and low insertion losses and suppress resonance modes below a predetermined microwave...
5637922 Wireless radio frequency power semiconductor devices using high density interconnect  
A power device component package includes a substrate supporting a drain lead, a source lead, and a gate lead. Each of the leads comprises an electrically conductive material having a thickness...
5635762 Flip chip semiconductor device with dual purpose metallized ground conductor  
Semiconductor device for the microwave frequency ranges includes a semiconductor element of the "flip chip" type which comprises a semiconductor substrate having an active surface with at least one...
5633517 Semiconductor device constituting multi-stage power amplifier  
A semiconductor device has a multi-stage power amplifier, which is composed of a plurality of transistors each having an input terminal and an output terminal. The transistors are disposed on a...
5631809 Semiconductor device for ultrahigh frequency band and semiconductor apparatus including the semiconductor device  
A semiconductor device comprising a semiconductor chip, a sheet-like metal member electrically connected to a major surface of the semiconductor chip and serving as a ground electrode for the chip,...
5614743 Microwave integrated circuit (MIC) having a reactance element formed on a groove  
MMIC elements are formed on the surface of a GaAs semiconductor substrate. Rectangular U grooves having V-shaped bottoms are formed on the bottom surface of the substrate up to the surface of the...
5612556 Monolithic integration of microwave silicon devices and low loss transmission lines  
A monolithic integrated circuit capable of operation in the microwave range which is fabricated using silicon technology wherein transmission line interconnects are fabricated along with active...
5602421 Microwave monolithic integrated circuit package with improved RF ports  
A mounting and protective package for a monolithic microwave integrated circuit die (16) operable in the K a -band is formed of two high temperature co-fired ceramic layers sandwiched by two metal...
Matches 401 - 450 out of 622 < 1 2 3 4 5 6 7 8 9 10 11 12 13 >