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8994026 Structure, structure and method of latch-up immunity for high and low voltage integrated circuits  
Design structures, structures and methods of manufacturing structures for providing latch-up immunity for mixed voltage integrated circuits. The structure includes a diffused N-Tub structure...
8981374 Semiconductor device  
A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate,...
8975635 Co-integration of elemental semiconductor devices and compound semiconductor devices  
First and second template epitaxial semiconductor material portions including different semiconductor materials are formed within a dielectric template material layer on a single crystalline...
8975634 Semiconductor device including oxide semiconductor film  
An object is to suppress occurrence of oxygen deficiency. An oxide semiconductor film is formed using germanium (Ge) instead of part of or all of gallium (Ga) or tin (Sn). At least one of bonds...
8969879 Solid state image pickup device and method of producing solid state image pickup device  
Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate...
8969875 Thin film transistor substrate and method for fabricating the same  
The present invention relates to a thin film transistor substrate and method for fabricating the same which can secure an alignment margin and reduce the number of mask steps. A thin transistor...
8963158 Structure, structure and method of latch-up immunity for high and low voltage integrated circuits  
Design structures, structures and methods of manufacturing structures for providing latch-up immunity for mixed voltage integrated circuits. The structure includes a diffused N-Tub structure...
8957422 Method of fabricating a semiconductor device  
There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate electrode with a width narrower than...
8945997 Integrated circuits having improved split-gate nonvolatile memory devices and methods for fabrication of same  
Integrated circuits and methods for fabricating integrated circuits are provided. An exemplary method for fabricating an integrated circuit having a split-gate nonvolatile memory device includes...
8946722 Organic light emitting display device and method of manufacturing the same  
An organic light emitting display device with enhanced luminous efficiency and color viewing angle and a method of manufacturing the same are disclosed. The method includes forming a first...
8941112 Semiconductor device and method for manufacturing the same  
A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor...
8932914 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Method for manufacturing semiconductor device
 
A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of...
8901559 Semiconductor device having inverter circuit with terminal electrically connected to transistor that includes oxide semiconductor material  
One object is to provide a new semiconductor device whose standby power is sufficiently reduced. The semiconductor device includes a first power supply terminal, a second power supply terminal, a...
8901566 High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture  
A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. A SiGe layer is selectively grown in the source and...
8890164 Apparatus and method for reducing plasma-induced damage in pMOSFETS  
A metal oxide semiconductor field effect transistor (MOSFET) for an integrated circuit includes a substrate of a first conductivity type, a first well region of a second conductivity type located...
8889439 Method and apparatus for packaging phosphor-coated LEDs  
The present disclosure involves a method of packaging light-emitting diodes (LEDs). According to the method, a plurality of LEDs is provided over an adhesive tape. The adhesive tape is disposed on...
8853746 CMOS devices with stressed channel regions, and methods for fabricating the same  
The present invention relates to improved complementary metal-oxide-semiconductor (CMOS) devices with stressed channel regions. Specifically, each improved CMOS device comprises an field effect...
8841675 Minute transistor  
A minute transistor and the method of manufacturing the minute transistor. A source electrode layer and a drain electrode layer are each formed in a corresponding opening formed in an insulating...
8835243 Semiconductor process  
A semiconductor process includes the following steps. A first structure and a second structure are formed on a substrate. An oxide layer is entirely formed to cover the first structure and the...
8823146 Semiconductor structure having silicon devices, column III-nitride devices, and column III-non-nitride or column II-VI devices  
A semiconductor structure having a silicon substrate having a <111> crystallographic orientation, an insulating layer disposed over a first portion of the silicon substrate, a silicon layer having...
8810765 Electroluminescence element  
An electroluminescence element includes an electroluminescence substrate including a thin film transistor substrate, and a light-emitting layer provided over the thin film transistor substrate and...
8809850 Semiconductor device having switching transistor that includes oxide semiconductor material  
One object is to provide a new semiconductor device whose standby power is sufficiently reduced. The semiconductor device includes a first power supply terminal, a second power supply terminal, a...
8803276 Electrostatic discharge (ESD) device and method of fabricating  
A structure and method of fabricating electrostatic discharge (EDS) circuitry in an integrated circuit chip by integrating a lateral bipolar, either a p-n-p with a NMOSFET or a n-p-n with a...
8772074 Organic light emitting display and manufacturing method of the same  
Provided are an organic light emitting display device and a method for manufacturing the same. The organic light emitting display device comprises a transistor on a substrate, a cathode on the...
8754417 Vertical stacking of field effect transistor structures for logic gates  
Vertically stacked Field Effect Transistors (FETs) are created where a first FET and a second FET are controllable independently. The vertically stacked FETs may be connected in series or in...
8748222 Method for forming oxide thin film transistor  
A method for manufacturing oxide thin film transistors includes steps of: forming a gate, a drain electrode, a source electrode, and an oxide semiconductor layer respectively. The oxide...
8735194 Method of manufacturing display apparatus  
Provided is a method of manufacturing a display apparatus, including forming a drive circuit and a light-emitting portion on a substrate in which the forming the light-emitting portion includes...
8686425 Method for manufacturing semiconductor device  
A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of...
8664658 Semiconductor device  
An n-channel transistor or a p-channel transistor provided with a second gate electrode for controlling a threshold voltage in addition to a normal gate electrode is used for a complementary logic...
8653595 Semiconductor device and method of manufacturing the same  
The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin...
8648453 Semiconductor device and method for manufacturing the same  
In a POP type semiconductor device comprising a second semiconductor package as an upper package stacked on a first semiconductor package as a lower package, a plurality of main surface-side lands...
8624255 Array substrate and method of fabricating the same  
An array substrate includes an active layer including a channel region, a gate electrode positioned corresponding to the channel region, and a gate insulating film between the active layer and the...
8604557 Semiconductor memory device and method for manufacturing  
A semiconductor memory device includes: a first n-type transistor; a first p-type transistor; a first wiring layer having a first interconnecting portion for connecting a drain of the first n-type...
8598570 Organic transistor array, display device and method of fabricating display device  
An organic transistor array includes gate electrodes provided on a substrate, source and drain electrodes provided above or below the gate electrodes via a gate insulator layer, and an organic...
8592907 Semiconductor device and method for manufacturing the same  
It is an object to achieve high performance of a semiconductor integrated circuit depending on not only a microfabrication technique but also another way and to achieve low power consumption of a...
8575615 Semiconductor device  
A diode 201 includes a gate electrode 2, a gate insulating layer 5 provided on the gate electrode 2, at least one semiconductor layer 6, 7 provided on the gate insulating layer 5 and which...
8575720 Process for integrating on an inert substrate a device comprising at least a passive element and an active element and corresponding integrated device  
A process is described for integrating, on an inert substrate, a device having at least one passive component and one active component. The process comprises: deposition of a protection dielectric...
8569764 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same  
A thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, and including a channel region, source and drain regions, and edge regions having a first impurity...
8546810 Thin film transistor, display device, and electronic appliance  
A thin film transistor in which an effect of photo current is small and an On/Off ratio is high is provided. In a bottom-gate bottom-contact (coplanar) thin film transistor, a channel formation...
8530285 Method for manufacturing semiconductor device  
A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of...
8525173 Semiconductor device and manufacturing method thereof  
A means of forming unevenness for preventing specular reflection of a pixel electrode, without increasing the number of process steps, is provided. In a method of manufacturing a reflecting type...
8519403 Angled implantation for deep submicron device optimization  
A method for forming a submicron device includes depositing a hard mask over a first region that includes a polysilicon well of a first dopant type and a gate of a second dopant type and a second...
8519402 Structure, structure and method of latch-up immunity for high and low voltage integrated circuits  
Design structures, structures and methods of manufacturing structures for providing latch-up immunity for mixed voltage integrated circuits. The structure includes a diffused N-Tub structure...
8507803 Structure of connecting printed wiring boards, method of connecting printed wiring boards, and adhesive having anisotropic conductivity  
The invention offers a board-connecting structure that can provide electrodes with a fine pitch and that can combine the insulating property and the connection reliability. The structure of...
8476665 Display device  
The present invention provides a display device. The display device comprises first and second wirings, first and second transistors, an insulating film over the first and second transistors, a...
8466465 Thin film transistor having an oxide semiconductor bilayer, method of manufacturing the same and flat panel display device having the same  
Disclosed is a thin film transistor which has an oxide semiconductor as an activation layer, a method of manufacturing the same and a flat panel display device having the same. The thin film...
8461577 Organic EL device  
According to one embodiment, an organic EL device includes an insulating substrate, first and second interlayer insulators, pixel electrodes, an organic layer, and a counter electrode. The first...
8445968 Semiconductor device having analog transistor with improved operating and flicker noise characteristics and method of making same  
A semiconductor device with improved transistor operating and flicker noise characteristics includes a substrate, an analog NMOS transistor and a compressively-strained-channel analog PMOS...
8445911 Active device array substrate  
An active device array substrate including a substrate, scan lines, data lines, active devices, a first dielectric layer, a common line, a second dielectric layer, a patterned conductive layer, a...
8426891 Semiconductor device and method of fabricating the same  
A semiconductor substrate according to one embodiment includes: a first transistor having a first gate insulating film formed on a semiconductor substrate, a first gate electrode formed on the...

Matches 1 - 50 out of 377 1 2 3 4 5 6 7 8 >