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Match Document Document Title
8178872 Molecular device, imaging device, photosensor, and electronic apparatus  
A molecular device includes a gold electrode, cytochrome c552 or a derivative or variant thereof immobilized on the gold electrode, and an electron transfer protein coupled to the cytochrome c552...
8178884 Thin film transistor including compound semiconductor oxide, method of manufacturing the same and flat panel display device having the same  
A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode...
8174049 Semiconductor device and method of fabricating the same  
A semiconductor device according to one embodiment includes: a semiconductor substrate having first and second regions; a first transistor comprising a first gate insulating film and a first gate...
8164095 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer  
It is an object to provide a semiconductor device which has a large size and operates at high speed. A top gate transistor which includes a semiconductor layer of single-crystal and a bottom gate...
8124975 Display device with multi-gate TFTs of a pixel region having different relative areas of gate regions with respect to channel regions of the TFTs  
Provided is a display device capable of suppressing generation of optical leakage current as well as increase in capacitance in a case where a plurality of thin film transistors (TFTs) including a...
8124976 Semiconductor device and method of manufacturing the same  
The present invention provides a semiconductor device including SRAM cell units each including a data holding section made up of a pair of driving transistors and a pair of load transistors, a data...
8124977 Localized compressive strained semiconductor  
One aspect of the present subject matter relates to a method for forming strained semiconductor film. According to an embodiment of the method, a crystalline semiconductor bridge is formed over a...
8115209 Dual gate layout for thin film transistor  
A dual gate layout of a thin film transistor of liquid crystal display to alleviate dark current leakage is disclosed. The layout includes (1) a polysilicon on a substrate having a L-shaped or a...
8115210 Semiconductor display device  
A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long,...
8106449 Semiconductor device  
To achieve a stable reading operation in a memory cell having a gain-cell structure, a write transistor is configured, which has a source and a drain that are formed on the insulating layer, a...
8101953 Thin film transistor having a plurality of carbon nanotubes  
A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting...
8101947 System and method for manufacturing a thin-film device  
A thin-film device includes a plurality of circuit components defining an operational region of the thin-film device, an unpatterned channel portion (108, 340) disposed on the plurality of circuit...
8089069 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same  
A thin film transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate and crystallized using a metal catalyst, a gate insulating layer disposed on the semiconductor...
8067772 Semiconductor device and manufacturing method thereof  
An object is to provide a semiconductor device with improved reliability and for which a defect due to an end portion of a semiconductor layer provided in an island-shape is prevented, and a...
8063405 Display device and manufacturing method thereof, and semiconductor device and manufacturing method thereof  
A display device includes source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. The source/drain electrodes and the...
8053779 Thin film transistor panel, method of fabricating the same, and organic light emitting display device including the same  
Provided are a thin film transistor (TFT) panel, a method of fabricating the same, and an organic light emitting display device (OLED) including the same. The TFT panel has a TFT region and a...
8053290 Manufacturing method of semiconductor device  
Ni silicide is formed through simple steps. After forming a semiconductor film over a substrate, a Ni film is deposited over the semiconductor film while heating the substrate, thereby forming Ni...
8044403 Display device  
An integrated circuit, which is configured such that a MOS transistor and a bipolar transistor are integrated at the same time, is formed on an insulating substrate which includes a display device....
8035106 Electronic device, constituted by using thin-film transistors  
An integrated circuit, which is configured such that a MOS transistor and a bipolar transistor are integrated at the same time, is formed on an insulating substrate which includes a display device....
8035105 Solid state image pickup device and method of producing solid state image pickup device  
Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate...
8008137 Method for fabricating 1T-DRAM on bulk silicon  
An integrated circuit includes a bulk technology integrated circuit (bulk IC) including a bulk silicon layer and complementary MOSFET (CMOS) transistors fabricated thereon. The integrated circuit...
7989899 Transistor, inverter including the same and methods of manufacturing transistor and inverter  
A transistor, an inverter including the transistor, and methods of manufacturing the inverter and the transistor. A gate insulating layer of the transistor has a charge trap region. A threshold...
7968884 Semiconductor device and manufacturing method thereof  
A semiconductor device manufactured utilizing an SOI substrate, in which defects due to an end portion of an island-shaped silicon layer are prevented and the reliability is improved, and a...
7964873 Thin film transistor array panel and manufacturing method thereof  
A thin film transistor array panel is provided, which includes: a substrate; a first polysilicon member that is formed on the substrate and includes an intrinsic region, at least one first...
7964916 Method for fabrication of a semiconductor device and structure  
A method for fabrication of 3D semiconductor devices utilizing a layer transfer and steps for forming transistors on top of a pre-fabricated semiconductor device comprising transistors formed on...
7964900 Semiconductor device with semi-insulating substrate portions  
A semiconductor substrate includes semi-insulating portions beneath openings in a patterned hardmask film formed over a semiconductor substructure to a thickness sufficient to prevent charged...
7952097 Semiconductor device and method of fabricating the same  
A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island...
7952101 Light emitting device and method of manufacturing the same  
The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen....
7928445 Semiconductor MOS transistor device  
A disclosed semiconductor device includes a MOS transistor that causes no problems concerning the formation of a thick gate insulating film and that is applicable to high withstand voltage devices....
7928438 Semiconductor thin film and semiconductor device  
After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen...
7923779 Semiconductor device and method of manufacturing the same  
The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin...
7923781 Semiconductor device and method for manufacturing the same  
It is an object to achieve high performance of a semiconductor integrated circuit depending on not only a microfabrication technique but also another way and to achieve low power consumption of a...
7919777 Bottom gate thin film transistor and method of manufacturing the same  
A method of manufacturing a bottom gate thin film transistor (“TFT”) in which a polycrystalline channel region having a large grain size is formed relatively simply and easily. The method of man...
7911005 Dram having deeper source drain region than that of an logic region  
A semiconductor device having a DRAM region and a logic region embedded together therein, including a first transistor formed in a DRAM region, and having a first source/drain region containing...
7910933 Dual gate layout for thin film transistor  
A dual gate layout of a thin film transistor of liquid crystal display to alleviate dark current leakage is disclosed. The layout includes (1) a polysilicon on a substrate having a L-shaped or a...
7906779 Thin film transistor and method of manufacturing the same  
A thin film transistor includes a polysilicon layer formed over a substrate having a channel region, a source region and a drain region, a conductive layer formed in an upper layer of the...
7893437 Semiconductor device and manufacturing method thereof  
A semiconductor device and method of manufacturing the same are disclosed. An example semiconductor device includes a semiconductor substrate having a first well, a first source electrode, a drain...
7893532 External contact material for external contacts of a semiconductor device and method of making the same  
An external contact material for external contacts of a semiconductor device and a method for producing the same are described. The external contact material includes a lead-free solder material....
7884367 Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate  
A polycrystalline Si thin film and a single crystal Si thin film are formed on an SiO2 film deposited on an insulating substrate. A polycrystalline Si layer is grown by thermally crystallizing an...
7880206 CMOS image sensor with asymmetric well structure of source follower  
Provided is a CMOS image sensor with an asymmetric well structure of a source follower. The CMOS image sensor includes: a well disposed in an active region of a substrate; a drive transistor having...
7861406 Method of forming CMOS transistors with dual-metal silicide formed through the contact openings  
Methods and associated structures of forming a microelectronic device are described. Those methods may include amorphizing at least one contact area of a source/drain region of a transistor...
7863621 Thin film transistor  
A thin film transistor includes a semiconductor layer formed on a polycrystalline silicon layer crystallized by a super grain silicon (SGS) crystallization method. The thin film transistor is...
7863162 Semiconductor device and manufacturing method thereof  
A manufacturing method of a semiconductor device in which the oxygen and carbon concentrations are reduced at the interface of each layer making up the semiconductor multilayer film. A first...
7858964 Semiconductor device formed in a recrystallized layer  
A semiconductor device includes a substrate that includes a first layer and a recrystallized layer on the first layer. The first layer has a first intrinsic stress and the recrystallized layer has...
7838346 Manufacturing method of semiconductor device  
Ni silicide is formed through simple steps. After forming a semiconductor film over a substrate, a Ni film is deposited over the semiconductor film while heating the substrate, thereby forming Ni...
7829953 Semiconductor device and method of fabricating the same  
A semiconductor device includes a semiconductor substrate including an NMOS region and a PMOS region, a gate insulating layer formed on the semiconductor substrate, an NMOS gate formed on the gate...
7821008 Semiconductor device and manufacturing method thereof  
A catalytic element is added to an amorphous semiconductor film and heat treatment is conducted therefor to produce a crystalline semiconductor film with good quality, a TFT (semiconductor device)...
7821138 Semiconductor device with an improved operating property  
The semiconductor comprises an n-channel transistor forming region and a p-channel transistor forming region, which are disposed while being sectioned by an element isolation region. The stress...
7808001 Method for fabricating semiconductor device and semiconductor device  
An n-channel MOS transistor and a p-channel MOS transistor are formed on a semiconductor substrate 100. The p-channel MOS transistor includes a gate electrode 102a, a first offset sidewall 103a...
7791077 Electronic device, display device, interface circuit and differential amplification device, which are constituted by using thin-film transistors  
An integrated circuit, which is configured such that a MOS transistor and a bipolar transistor are integrated at the same time, is formed on an insulating substrate which includes a display device....
Matches 1 - 50 out of 295 1 2 3 4 5 6 >