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8178882 Buffer layer for promoting electron mobility and thin film transistor having the same  
A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the...
8169007 Asymmetric junction field effect transistor  
A junction field effect transistor (JFET) in a semiconductor substrate includes a source region, a drain region, a channel region, an upper gate region, and a lower gate region. The lower gate...
8164095 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer  
It is an object to provide a semiconductor device which has a large size and operates at high speed. A top gate transistor which includes a semiconductor layer of single-crystal and a bottom gate...
8159014 Localized biasing for silicon on insulator structures  
A silicon-on-insulator device has a localized biasing structure formed in the insulator layer of the SOI. The localized biasing structure includes a patterned conductor that provides a biasing...
8148728 Method for fabrication of a semiconductor device and structure  
A method for fabrication of 3D semiconductor devices utilizing a layer transfer and steps for forming transistors on top of a pre-fabricated semiconductor device comprising transistors formed on...
8114757 Semiconductor device and structure  
A method of manufacturing a semiconductor wafer, the method comprising providing a base wafer comprising a semiconductor substrate; preparing a first monocrystalline layer comprising semiconductor...
8115207 Vacuum channel transistor and diode emitting thermal cathode electrons, and method of manufacturing the vacuum channel transistor  
Provided are a transistor and a method of manufacturing the transistor, and more particularly, a vacuum channel transistor emitting thermal cathode electrons and a method of manufacturing the...
8110485 Nanocrystal silicon layer structures formed using plasma deposition technique, methods of forming the same, nonvolatile memory devices having the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices  
Provided are nanocrystal silicon layer structures formed using a plasma deposition technique, methods of forming the same, nonvolatile memory devices including the nanocrystal silicon layer...
8106449 Semiconductor device  
To achieve a stable reading operation in a memory cell having a gain-cell structure, a write transistor is configured, which has a source and a drain that are formed on the insulating layer, a...
8097499 Semiconductor device and methods thereof  
A semiconductor device and method thereof. The example method may include forming a semiconductor device, including forming a first layer on a substrate, the first layer including aluminum nitride...
8053779 Thin film transistor panel, method of fabricating the same, and organic light emitting display device including the same  
Provided are a thin film transistor (TFT) panel, a method of fabricating the same, and an organic light emitting display device (OLED) including the same. The TFT panel has a TFT region and a...
8048727 Methods of forming SRAM devices having buried layer patterns  
An SRAM device includes a substrate having at least one cell active region in a cell array region and a plurality of peripheral active regions in a peripheral circuit region, a plurality of stacked...
8030651 Micro electro mechanical device and manufacturing method thereof  
To manufacture a micro structure and an electric circuit included in a micro electro mechanical device over the same insulating surface in the same step. In the micro electro mechanical device, an...
8030655 Thin film transistor, display device having thin film transistor  
A thin film transistor with excellent electric characteristics, a display device having the thin film transistor, and a method for manufacturing the thin film transistor and the display device in a...
8026521 Semiconductor device and structure  
A device comprising semiconductor memories, the device comprising: a first layer and a second layer of layer-transferred mono-crystallized silicon, wherein the first layer comprises a first...
7989811 Manufacturing method of semiconductor device  
A manufacturing method of a highly reliable semiconductor with a waterproof property. The method includes the steps of: sequentially forming a peeling layer, an inorganic insulating layer, and an...
7982250 Semiconductor device  
A semiconductor device is demonstrated in which a plurality of field-effect transistors is stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating...
7982221 Semiconductor memory device having three dimensional structure  
A semiconductor device and method for arranging and manufacturing the same are disclosed. The semiconductor device includes a plurality of inverters including at least one first pull-up transistor...
7977144 Thin film transistor array panel and manufacture thereof  
A method for a thin film transistor array panel includes forming a gate line and a pixel electrode on a substrate, forming a gate insulating layer covering the gate line, forming a data line...
7973314 Semiconductor device and method of manufacturing the same  
A semiconductor device has a first semiconductor layer including a first circuit, a second semiconductor layer disposed on the first semiconductor layer and having a second circuit, and a via...
7968965 Semiconductor device and method for fabricating the same  
Embodiments relate to a semiconductor device and a method for fabricating the same. According to embodiments, a semiconductor device may include a first device, a silicon epitaxial layer formed on...
7964916 Method for fabrication of a semiconductor device and structure  
A method for fabrication of 3D semiconductor devices utilizing a layer transfer and steps for forming transistors on top of a pre-fabricated semiconductor device comprising transistors formed on...
7955949 Manufacturing method of SOI substrate  
There is provided a method of manufacturing an SOI substrate which is practicable even when a supporting substrate having a low allowable temperature limit is used. A separation layer is formed in...
7936002 Multiple-layer non-volatile memory devices, memory systems employing such devices, and methods of fabrication thereof  
In multiple-layered memory devices, memory systems employing the same, and methods of forming such devices, a second memory device layer on a first memory device layer comprises a second substrate...
7923781 Semiconductor device and method for manufacturing the same  
It is an object to achieve high performance of a semiconductor integrated circuit depending on not only a microfabrication technique but also another way and to achieve low power consumption of a...
7910433 Methods of fabricating multi-layer nonvolatile memory devices  
A nonvolatile memory device includes a semiconductor substrate having a first well region of a first conductivity type, and at least one semiconductor layer formed on the semiconductor substrate. A...
7863162 Semiconductor device and manufacturing method thereof  
A manufacturing method of a semiconductor device in which the oxygen and carbon concentrations are reduced at the interface of each layer making up the semiconductor multilayer film. A first...
7851851 Three dimensional NAND memory  
A monolithic, three dimensional NAND string includes a first memory cell located over a second memory cell. A semiconductor active region of the first memory cell is formed epitaxially on a...
7833885 Microcrystalline silicon thin film transistor  
Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a...
7834358 Semiconductor LSI circuit and a method for fabricating the semiconductor LSI circuit  
Basic logic gates are formed in a small area, and a highly integrated and microscopic structure is provided. In an nMOSFET and a pMOSFET, gate electrodes are formed facing each other and...
7829948 Nonvolatile semiconductor memory  
A nonvolatile semiconductor memory according to an aspect of the invention comprises a semiconductor substrate which has an SOI region and an epitaxial region at its surface, a buried oxide film...
7795619 Semiconductor device  
A method for manufacturing a semiconductor device, including the steps of: forming a shielding film 38 on a first insulating film 37; sequentially forming a second insulating film 39 and an...
7791077 Electronic device, display device, interface circuit and differential amplification device, which are constituted by using thin-film transistors  
An integrated circuit, which is configured such that a MOS transistor and a bipolar transistor are integrated at the same time, is formed on an insulating substrate which includes a display device....
7755137 Bandgap engineered MOS-gated power transistors  
Devices, methods, and processes that improve immunity to transient voltages and reduce parasitic impedances. Immunity to unclamped inductive switching events is improved. For example, a...
7741645 Three-dimensional integrated heterogeneous semiconductor structure  
A first set of semiconductor devices is formed on a first semiconductor substrate comprising a first semiconductor material having a first melting point. A first via-level dielectric layer...
7741644 Semiconductor device having stacked transistors  
A semiconductor device includes a first semiconductor layer, a first interlayer insulation layer, a second semiconductor layer, and a gate pattern. The first interlayer insulation layer covers the...
7662704 Electro-optical device, method of manufacturing the same, electronic apparatus, and semiconductor device  
An electro-optical device includes: a substrate; a plurality of pixel units provided in a display region on the substrate; and a driving circuit that is provided in a peripheral region surrounding...
RE41068 Spacer-type thin-film polysilicon transistor for low-power memory devices  
The cross-sectional area of a thin-film transistor (TFT) is decreased in order to minimize bitline to supply leakage of the TFT. This is accomplished by utilizing a spacer etch process to...
7619251 Laser crystallization method suppressing propagation of cracks forming a display device  
A method of irradiating at least a part of a semiconductor film on the substrate with a CW or pseudo-CW laser beam so as to grow crystals laterally. A region over the semiconductor film having Si...
7612375 Semiconductor device and method for fabricating the same  
A semiconductor device includes at least one thin-film transistor, which includes a semiconductor layer, a gate electrode and a gate insulating film. In the semiconductor layer, a crystalline...
7592625 Semiconductor transistor with multi-level transistor structure and method of fabricating the same  
Example embodiments relate to a semiconductor device and a method of fabricating the same. The device may include a semiconductor substrate including a peripheral region and a cell array region,...
7579623 Stacked transistors and process  
A method of horizontally stacking transistors on a common semiconductor substrate is initiated by providing a single crystal, generally silicon, semiconductor substrate. A plurality of transistors...
7569894 Semiconductor device with NMOS transistors arranged continuously  
A semiconductor device includes a plurality of PMOS transistors formed on a semiconductor substrate; and a plurality of NMOS transistors formed on the semiconductor substrate. The plurality of PMOS...
7547917 Inverted multilayer semiconductor device assembly  
An apparatus and method for an inverted multilayer silicon over insulator (SOI) device is provided. In the multilayer SOI device, the crystal orientation of at least one active region of a device...
7545008 Complementary metal-oxide-semiconductor transistor structure for high density and high performance integrated circuits  
A semiconductor device may include a substrate and an insulating layer formed on the substrate. A multi-layer fin may be formed on the insulating layer and may include two semiconducting layers...
7537980 Method of manufacturing a stacked semiconductor device  
In a method of manufacturing a stacked semiconductor device, a seed layer including impurity regions may be prepared. A first insulation interlayer pattern having a first opening may be formed on...
7538351 Method for forming an SOI structure with improved carrier mobility and ESD protection  
A semiconductor device and method for forming the same including improved electrostatic discharge protection for advanced semiconductor devices, the semiconductor device including providing...
7525121 Coplanar silicon-on-insulator (SOI) regions of different crystal orientations and methods of making the same  
In a first aspect, a first method is provided for semiconductor device manufacturing. The first method includes the steps of (1) providing a substrate; and (2) forming a first silicon-on-insulator...
7521713 Semiconductor device having electrostatic discharge element  
A semiconductor device includes a laminated substrate; a removal portion; a cavity; a first semiconductor element; and a second semiconductor element. In the laminated substrate, a bulk layer, an...
7491973 Semiconductor LSI circuit having a NAND logic gate with a highly integrated and microscopic structure  
Basic logic gates are formed in a small area, and a highly integrated and microscopic structure is provided. In an nMOSFET and a pMOSFET, gate electrodes are formed facing each other and...
Matches 1 - 50 out of 276 1 2 3 4 5 6 >