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4875087 Integrated circuit device having strip line structure therein  
An integrated circuit device including: at least one semiconductor chip (3) having a plurality of circuit elements; a package (21 to 24) enclosing the semiconductor chip with a hermetic seal; and...
4873566 Multilayer ceramic laser package  
A multilayer ceramic package for optical devices is disclosed for use in both high and low bit rate applications. A side portion of the multilayer package is formed to provide a multilayer...
4866507 Module for packaging semiconductor integrated circuit chips on a base substrate  
An integrated circuit chip packaging structure, preferably having a semiconductor base substrate, i.e., silicon or gallium arsenide, alternating insulation and conductive layers on the base...
4841353 Transistor devices for microwave oscillator elements  
A transistor device for a microwave oscillating element having an FET transistor chip and a package encapsulating the chip therein. In order to avoid any affection of the external circuit to the...
4839717 Ceramic package for high frequency semiconductor devices  
A ceramic semiconductor package suitable for high frequency operation includes internal and external ground planes formed on opposite faces of a ceramic base member. The internal ground plane is...
4834491 Semiconductor laser module of dual in-line package type including coaxial high frequency connector  
A semiconductor laser module containing a semiconductor laser therein is disclosed, in which the insulated conductor of a coaxial-type high-frequency connector fixed to the outer wall suface of a...
4833521 Means for reducing signal propagation losses in very large scale integrated circuits  
A method and means for reducing signal propagation losses in very large scale integrated circuits is provided comprising a ground plane located adjacent to, but insulated from, a conductive signal...
4811082 High performance integrated circuit packaging structure  
A high speed, high performance integrated circuit packaging structure that may be used for emulating wafer scale integration structures. The preferred embodiment comprises an interposer having a...
4801996 Gigahertz rate integrated circuit package incorporating semiconductive MIS power-line substrate  
An integrated circuit package suitable for gigahertz range operation with many power lines is provided with a separate power line structure comprising a uniformly and degenerately doped silicon...
4768079 Field effect transistor device  
A two-terminal field effect transistor device which is capable of operation as an oscillator including a field effect transistor connected in a two-terminal manner. The transistor has the usual...
4766481 Power semiconductor module  
A power semiconductor module includes a multi-layered substrate formed of a first ceramic bottom plate, at least one second ceramic plate disposed above and parallel to the first ceramic bottom...
4758063 Optical device and circuit board set  
A plane or "board" for use in the interconnection of a plurality of optical circuit devices is disclosed. Each circuit device will have attached at least one optical signal transmission fiber or...
4739389 High-frequency circuit arrangement and semiconductor device for use in such an arrangement  
In a high-frequency circuit arrangement, passive parts of the circuit are realized in a semiconductor body in which active circuit elements of another semiconductor material are located in...
4737830 Integrated circuit structure having compensating means for self-inductance effects  
An improved integrated circuit structure is disclosed which comprises a Vcc bus and a Vss bus having capacitance means coupled between the busses and distributed along the length of the busses to...
4725878 Semiconductor device  
A semiconductor device provided with signal lines which connect a chip, provided at a top portion of a package, with external terminals provided at a bottom portion of the package. The signal...
4698661 Encapsulating box for a power semiconductor with improved input-output insulator  
The invention relates to an encapsulating box for a semiconductor operating in the range 2 to 20 GHz.At these frequencies, existing boxes have a metal base, an insulating frame and a cover. Two...
4692791 Monolithic IMPATT with stripline leads  
The disclosure relates to a monolithic circuit and method of making same which includes the use of two substrates of different semiconductor materials or two substrates of the same semiconductor...
4692789 Semiconductor apparatus  
In a semiconductor apparatus for controlling a large current at a high speed, a lead conductor coupled to a control electrode of a semiconductor device sealed in a package comprises a conductor...
4673958 Monolithic microwave diodes  
Two-terminal active devices, such as IMPATT and Gunn diodes, are combined with passive devices in a monolithic form using a plated metal heat sink to support the active elements and a coated-on...
4672151 Package for a microwave semiconductor device  
A package for a microwave semiconductor device or circuit is provided having an electrical terminal suitable to cascade connection. The package includes a metallic container for the semiconductor...
4661836 Fabricating integrated circuits  
A millimeter wave integrated circuit (MIC) includes both low power components and high power components, e.g. Gunn diodes, disposed on a common semi-insulating semi-conductor substrate. Each high...
4626889 Stacked differentially driven transmission line on integrated circuit  
A semiconductor integrated circuit structure including a semiconductor substrate having a large area adapted for a large scale integration, a circuit formed in the substrate for generating a pair...
4617586 High-frequency circuit comprising an integrated capacitor  
A high-frequency circuit (11) having at least a semiconductor circuit element (12) which is arranged on a first surface (13) of an insulating substrate (14). At least one (19a, 19b) of the output...
4612566 Microwave transistor mounting structure  
Disclosed is a microwave transistor mounting structure which comprises a chassis formed with raised portions, a substrate formed with a hole, and a microwave transistor, the raised portions of the...
4596069 Three dimensional processing for monolithic IMPATTs  
The disclosure relates to a monolithic circuit and method of making same which includes the use of two substrates of different semiconductor materials or two substrates of the same semiconductor...
4587719 Method of fabrication of long arrays using a short substrate  
A method of forming a flexible array of circuit elements and electrical contacts where parallel lines of conductors joined by short perpendicular line of conductors are folded both about an axis...
4587548 Lead frame with fusible links  
Copper lead frame for manufacturing a semiconductor chip carrier has signal leads extending from outer leads about the periphery of the frame and temporarily attached to a ground bus toward the...
4583111 Integrated circuit chip wiring arrangement providing reduced circuit inductance and controlled voltage gradients  
The area circumscribed by the current path on an integrated circuit chip is diminished, to thereby reduce the inductance of the chip and the likelihood of inductively generated errors, by...
4575727 Monolithic millimeter-wave electronic scan antenna using Schottky barrier control and method for making same  
A millimeter-wave electronic scan, phased array antenna in a slotted dielectric waveguide having a semi-insulating core and at least one semi-conducting epitaxial layer. A controller affixed to...
4568889 Distributed diode VCO with stripline coupled output and distributed variable capacitor control  
In a distributed IMPATT structure, power is coupled out through a side contact. That is, in previously proposed distributed IMPATT structures, the gain medium (the active region of the IMPATT)...
4568897 Millimeter-wave cut-off switch  
A millimeter-wave cut-off switch in a dielectric waveguide having a semi-insulating core and a semi-conducting epitaxial layer. A controller affixed to the epitaxial layer is alternately switched...
4565982 Millimeter-wave electronic phase shifter using Schottky barrier control  
A millimeter-wave electronic phase shifter in a dielectric waveguide having a semi-insulating dielectric core and at least one semi-conducting epitaxial layer. A controller affixed to the...
4553050 Transmission line terminator-decoupling capacitor chip for off-chip driver  
A signal transmission line terminator for an off-chip driver circuit is disclosed in which each capacitor and resistor comprising each terminator are formed on the same chip separate from the...
4531143 Laser activated MTOS microwave device  
A metal thin oxide silicon (MTOS) optically-activated semiconductor device having respective thin, optically absorptive aluminum layers deposited over a thin oxide layer formed on a silicon...
4514749 VLSI Chip with ground shielding  
In VLSI chips, clock pulse skew is increasingly forbidding as one micron technology and operation at 25 megahertz is approached. Skew is avoided by encompassing the clock distribution line in such...
4437077 Semiconductor device usable at very high frequencies and its production process  
The impedance value of the semiconductor device usable at very high frequencies is preset during manufacture.The device comprises a Gunn or Zener diode coupled to a coaxial line. The central...
4427991 High frequency semiconductor device  
A high frequency, hermetically-sealed, semiconductor device with the capability of being cascade-connected with corresponding devices in an advantageous manner. The device consists of a function...
4408219 Device for connecting in parallel power transistors in very high frequency  
A device for connecting in parallel high power transistors in very high frequency having a first plate serving as an electrical and thermal earth plane and a second electrically insulating plate...
4393392 Hybrid transistor  
A transistor package having input, reference (ground) and output terminals includes a ceramic base metallized to provide a ground plane and an isolated collector pad; and also includes a...
4387386 Microwave controlled field effect switching device  
A microwave switching device replacing PIN diodes and operating at higher eeds requires reduced switching current. A field effect controlled device is utilized with no ground plane, for...
4380020 Active high frequency semiconductor device with integral waveguide  
An active semiconductor device, such as a Gunn effect device, capable of operation at extremely high frequencies, fabricated in situ on a substrate that also serves as a dielectric waveguide to...
4379307 Integrated circuit chip transmission line  
The invention includes methods and apparatus for providing relatively long conductors on integrated chips with substantially reduced RC time constants. The preferred mode utilizes a substrate...
4376285 High speed optoelectronic switch  
An optoelectronic switch has been formed from a semi-insulating substrate of indium phosphide doped with a deep level impurity and disposed intermediate a microstrip transmission line. One...
4376287 Microwave power circuit with an active device mounted on a heat dissipating substrate  
A microwave power circuit includes a thermally conductive, electrically insulating substrate such as beryllium oxide which has a relatively rough surface, a layer of dielectric material such as...
4374394 Monolithic integrated circuit  
A monolithic integrated circuit comprises a substrate having first and second opposing major surfaces. A semiconductor device is at the first major surface, a circuit film pattern is on the second...
4369406 Semiconductor magneto-transistor device  
A device for reading information representing magnetization patterns on a medium by means of a time-of-flight magnetotransistor detector. The time-of-flight magnetotransistor detector consists of...
4340901 Lead connecting structure for a semiconductor device  
An improved brazing structure is disclosed in which at least a tip end portion to be brazed of a lead is bent and this tip end portion is bonded to a metallized layer by a brazing material...
4339668 Monolithically integrated circuit of high dielectric strength for electrically coupling isolated circuits  
A system is disclosed for coupling electrically isolated circuits in a monolithic integrated circuit. A signal coupler is integrated on a chip together with a primary circuit and a secondary...
4322695 Planar transmission line attenuator and switch  
The planar transmission line attenuator and switch is formed on a flat piece of semiconductor material. Transmission line metallic conductors are deposited on a flat surface of the semiconductor...
4309717 Coaxially mounted high frequency light detector housing  
A light detector housing in which the light detector is mounted directly on the central conductor of a coaxial transmission line and in which an electrically conducting sheet extends around the...