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7619255 |
Layer-stacked wiring and method for manufacturing same and semiconductor device using same and method for manufacturing semiconductor device
A layer-stacked wiring made up of a microcrystalline silicon thin film and a metal thin film is provided which is capable of suppressing an excessive silicide formation reaction between the...
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7619253 |
Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. An amorphous semiconductor thin film is irradiated with...
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7619250 |
Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
A polycrystalline Si thin film and a single crystal Si thin film are formed on an SiO 2 film deposited on an insulating substrate. A polycrystalline Si layer is grown by thermally crystallizing an...
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7615786 |
Thin film transistor incorporating an integrated capacitor and pixel region
A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between...
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7612379 |
Multi-gate thin film transistor having recrystallized channel regions with different grain sizes
An image display system has a multi-gate thin film transistor (TFT) disposed on a transparent substrate. The multi-gate TFT includes a silicon film layer, a first electrode and a reflecting layer....
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7612376 |
Semiconductor device
A systemized active matrix display in which a pixel matrix circuit, a driver circuit and a logic circuit are mounted on the same substrate, is formed. A TFT of the present invention has such...
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7612375 |
Semiconductor device and method for fabricating the same
A semiconductor device includes at least one thin-film transistor, which includes a semiconductor layer, a gate electrode and a gate insulating film. In the semiconductor layer, a crystalline...
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7612374 |
TFT containing coalesced nanoparticles
A thin film transistor comprising: (a) an insulating layer; (b) a gate electrode; (c) a semiconductor layer; (d) a source electrode; and (e) a drain electrode, wherein the insulating layer, the...
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7601567 |
Method of preparing organic thin film transistor, organic thin film transistor, and organic light-emitting display device including the organic thin film transistor
A method of forming an organic thin film transistor is disclosed. The method includes forming source and drain electrodes on a substrate; forming an insulating layer covering the source and drain...
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7588981 |
Semiconductor device and manufacturing method thereof
In a thin film transistor, a metallic element promoting crystallization of an amorphous silicon film is effectively removed and the productivity is improved. By using a silicon film containing an...
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7588976 |
Display device, method of production of the same, and projection type display device
A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size...
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7586122 |
Thin film transistor substrate and manufacturing method thereof
A thin film transistor substrate having improved display quality includes a gate line, a data line intersecting the gate line and providing a pixel region adjacent the gate line and the data line,...
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7585714 |
Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus
It is an object of the present invention to provide a laser irradiation apparatus being able to crystallize the semiconductor film homogeneously while suppressing the variation of the crystallinity...
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7576361 |
Backside silicon wafer design reducing image artifacts from infrared radiation
Imaging devices having reduced image artifacts are disclosed. The image artifacts in the imaging devices are reduced by redirecting, absorbing or scattering IR radiation that passes through the...
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7575965 |
Method for forming large area display wiring by droplet discharge, and method for manufacturing electronic device and semiconductor device
It is conceivable that the problem that a signal is delayed by resistor of a wiring in producing a display which displays large area becomes remarkable. The present invention provides a...
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7569856 |
Semiconductor device and method for manufacturing the same
A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film....
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7564057 |
Semiconductor device having an aluminum nitride film
A semiconductor device of having an insulating film comprising aluminum nitride and oxygen provided over a rear surface of a substrate. A transistor is provided over the insulating film. The...
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7563321 |
Process for producing high quality large size silicon carbide crystals
The invention is an improvement in the method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. In a first embodiment, the improvement comprises...
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7560734 |
Semiconductor device and manufacturing method thereof
In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and...
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7560301 |
Coating liquid for forming organic layered film, method of manufacturing field effect transistor, and field effect transistor
A method of manufacturing a field effect transistor of the present invention includes: applying a coating liquid 20 containing a solvent 13 as well as first and second organic molecules 11 ...
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7553714 |
Method of manufacturing thin film transistor having polycrystalline silicon layer, thin film transistor manufactured using the method and flat panel display comprising the thin film transistor
A method for manufacturing a thin film transistor having a more uniform threshold voltage, and a flat panel display device that includes the thin film transistor. The method includes forming an...
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7547947 |
SRAM cell
Disclosed is an SRAM cell on an SOI, bulk or HOT wafer with two pass-gate n-FETs, two pull-up p-FETs and two pull-down n-FETs and the associated methods of making the SRAM cell. The pass-gate FETs...
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7547916 |
Electronic circuit
An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å,...
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7547574 |
Organic thin film transistor(s) and method(s) for fabricating the same
Example embodiments of the present invention for fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, metal oxide source/drain electrodes...
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7541615 |
Display device including thin film transistors
A display including a driving substrate is provided. Arrayed on the driving substrate is a plurality of pixel electrodes and thin film transistors for driving the pixel electrodes. Each thin film...
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7541614 |
Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same
An integrated circuit mounting a DRAM which can realize high integration without complicated manufacturing steps. The integrated circuit according to the invention comprises a DRAM in which a...
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7538873 |
Method for simulating the movement of particles
A method for determining the movement of particles, particularly impurities, in a medium, under the influence of a changing interface between two neighboring phases. In a first step, the temporal...
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7538350 |
Semiconductor thin film device
It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further...
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7538349 |
Thin film transistor having a three-portion gate electrode and liquid crystal display using the same
The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain...
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7535022 |
Thin film transistor with plural channels and corresponding overlapping electrode
An object of the present invention is to provide a technique for improving characteristics of a TFT and realizing the structure of the TFT optimal for driving conditions of a pixel section and a...
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7528406 |
Semiconductor integrated circuit and method of fabricating same
A semiconductor integrated circuit comprising thin-film transistors in each of which the second wiring is prevented from breaking at steps. A silicon nitride film is formed on gate electrodes and...
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7525120 |
Thin film transistor array substrate and method of fabricating the same
A thin film transistor array substrate includes a gate line formed on a substrate, a data line formed on the substrate intersecting with the gate line to define a pixel region, a thin film...
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7521712 |
Thin film semiconductor device
A thin film semiconductor device is provided that includes a semiconductor thin film and a gate electrode. The semiconductor thin film has an active region turned into a polycrystalline region...
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7521711 |
Display device, method of production of the same, and projection type display device
A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size...
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7518252 |
Thin-film semiconductor substrate, method of manufacturing thin-film semiconductor substrate, method of crystallization, apparatus for crystallization, thin-film semiconductor device, and method of manufacturing thin-film semiconductor device
A thin-film semiconductor substrate includes an insulative substrate, an amorphous semiconductor thin film that is formed on the insulative substrate, and a plurality of alignment marks that are...
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7518145 |
Integrated multiple gate dielectric composition and thickness semiconductor chip and method of manufacturing the same
A method comprises forming a material over a substrate and patterning the material to remove portions of the material and expose an underlying portion of the substrate. The method further includes...
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7514714 |
Thin film power MOS transistor, apparatus, and method
A thin film power transistor includes a plurality of first doped regions over a substrate and a second doped region forming a body. At least a portion of the body is disposed between the plurality...
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7508034 |
Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device
A semiconductor device of the present invention is arranged in such a manner that a MOS non-single-crystal silicon thin-film transistor including a non-single-crystal silicon thin film made of...
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7507995 |
Semiconductor memory cell and semiconductor memory device
An insulating film with a linear concave portion is formed and a semiconductor film is formed thereon by deposition. The semiconductor film is irradiated with laser light to melt the semiconductor...
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7504663 |
Semiconductor device with a floating gate electrode that includes a plurality of particles
The present invention provides a semiconductor device capable of being mass-produced and a manufacturing method of the semiconductor device. The present invention also provides a semiconductor...
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7495256 |
Semiconductor apparatus and fabrication method of the same
It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus...
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7488980 |
Thin film semiconductor device and fabrication method therefor
A relaying pad is formed in a predetermined portion in an insulation layer of the single-crystal thin film device, in a region where the single-crystal thin film device is formed. The relaying pad...
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7479656 |
Compound semiconductor formed from a heated portion of a layered structure including rare earth transition metal
A method of manufacturing a compound semiconductor includes the steps of forming a layered structure of dielectric layers including oxygen or sulfur, and an inter layer formed between the...
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7479415 |
Fabrication method of polycrystalline silicon liquid crystal display device
A method for fabricating a polysilicon silicon liquid crystal display device is disclosed in which a contact hole connecting source and drain electrodes to an active layer is formed without a...
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7476939 |
Memory cell having an electrically floating body transistor and programming technique therefor
A memory cell comprising an electrically floating body transistor including a source region, a drain region, a body region disposed therebetween, wherein the body region is electrically floating,...
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7476916 |
Semiconductor device having a mis-type fet, and methods for manufacturing the same and forming a metal oxide film
[Problems] To provide a semiconductor device including a MIS-type FET having an excellent characteristic of low leakage current despite use of a high-K material of a high dielectric constant in a...
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7476896 |
Thin film transistor and method of fabricating the same
A thin film transistor (TFT) and a method of fabricating the same, in which a fabrication process is simplified and damage to a gate insulating layer is decreased. The method of fabricating the TFT...
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7473972 |
Thin film transistor substrate and method for manufacturing the same
A thin film transistor substrate includes a thin film transistor of a first conductivity type, a semiconductor layer having a channel region of the first conductivity type placed between the...
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7470930 |
Silicon carbide semiconductor device
A silicon carbide semiconductor device includes a semiconductor element disposed in a semiconductor substrate having a first conductive type silicon carbide layer and a silicon substrate. The...
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7465958 |
Thin film transistor, semiconductor device, and method for manufacturing the same
A semiconductor element is operated without being affected even when the substrate is largely affected by heat shrink such as a large substrate. Furthermore, a thin film semiconductor circuit and a...
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