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8178877 |
Thin film transistor and method for fabricating thin film transistor
Disclosed are a thin film transistor having high reliability and providing a simplified fabricating process, and a method of fabricating the thin film transistor. In the method, a dielectric...
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8178884 |
Thin film transistor including compound semiconductor oxide, method of manufacturing the same and flat panel display device having the same
A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode...
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8178882 |
Buffer layer for promoting electron mobility and thin film transistor having the same
A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the...
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8174053 |
Semiconductor device, production method thereof, and electronic device
The present invention provides a semiconductor device which includes a thin film transistor as a resistance element, wherein a variation in resistance of the thin film transistor is suppressed...
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8174019 |
Static-tolerant display apparatus
A display apparatus includes a thin film transistor having a top-gate structure and a storage capacitor that are arranged on a first substrate. An upper electrode of the storage capacitor has a...
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8168518 |
Method for crystallizing thin film, method for manufacturing thin film semiconductor device, method for manufacturing electronic apparatus, and method for manufacturing display device
A gate insulating film (13) is formed on a substrate (1) so as to cover a gate electrode (11), and an amorphous silicon film (semiconductor thin film) (15) is further formed. A light absorption...
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8168968 |
Thin film transistor and organic light emitting display device using the same
There is provided a thin film transistor exhibiting stable reliability and electrical characteristics by forming an active layer by adding material having a large difference of electronegativity...
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8168979 |
Crystallization method, thin film transistor manufacturing method, thin film transistor, display, and semiconductor device
According to a crystallization method, in the crystallization by irradiating a non-single semiconductor thin film of 40 to 100 nm provided on an insulation substrate with a laser light, a light...
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8164095 |
***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
It is an object to provide a semiconductor device which has a large size and operates at high speed. A top gate transistor which includes a semiconductor layer of single-crystal and a bottom gate...
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8164090 |
Field effect transistor and process for production thereof
A field effect transistor has a gate electrode, gate-insulating layer, a channel and a source and drain electrodes connected electrically to the channel, the channel comprising an oxide...
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8158980 |
Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
In a CMOS circuit formed on a substrate 100, a subordinate gate wiring line (a first wiring line) 102a and main gate wiring line (a second wiring line) 113a are provided in an n-channel TFT. The...
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8158464 |
Method of manufacturing a liquid crystal display device with a semiconductor film including zinc oxide
To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type...
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8158984 |
Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same
A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two...
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8154023 |
Low temperature polysilicon thin film transistor
A low temperature polysilicon thin film transistor and method of manufacturing the same is provided. The low temperature polysilicon thin film transistor comprises a channel region. Among others,...
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8148723 |
Light-emitting device and manufacturing method thereof
A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked in this order (a thin-film stacked body); first...
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8148722 |
Method of manufacturing P-type ZnO semiconductor layer using atomic layer deposition and thin film transistor including the P-type ZnO semiconductor layer
Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a...
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8148726 |
Display device and manufacturing method thereof
A display device which has thin film transistors, wherein a semiconductor layer includes a first layer, second layers and third layers, the first layer has a channel region, the second layers are...
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8143625 |
Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an...
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8143623 |
Thin film transistor and manufacturing method thereof
A thin film transistor and a manufacturing method thereof are provided. An insulating pattern layer having at least one protrusion is formed on a substrate. Afterwards, at least one spacer and a...
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8138501 |
Switching element and manufacturing method thereof
Disclosed is a switching element provided with a gate dielectric film and an active layer disposed in contact with the gate dielectric film. The active layer includes carbon nanotubes, and the gate...
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8134156 |
Semiconductor device including zinc oxide containing semiconductor film
To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type...
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8134152 |
CMOS thin film transistor, method of fabricating the same and organic light emitting display device having laminated PMOS poly-silicon thin film transistor with a top gate configuration and a NMOS oxide thin film transistor with an inverted staggered bottom gate configuration
A CMOS thin film transistor arrangement including a PMOS poly-silicon thin film transistor having a top gate configuration and a NMOS oxide thin film transistor having an inverted staggered bottom...
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8134153 |
Semiconductor apparatus and fabrication method of the same
It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus...
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8134155 |
Liquid crystal display device capable of reducing leakage current, and fabrication method thereof
The present invention discloses a liquid crystal display device which can improve quality of image by reducing a leakage current by a backlight, and a fabrication method thereof. The liquid crystal...
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8124980 |
Display device
A display device includes a display panel which forms a plurality of sub pixels on a substrate thereof, and a drive circuit which is configured to drive the plurality of sub pixels, wherein the...
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8124973 |
Electronic appliance including transistor having LDD region
A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain...
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8124963 |
Thin film transistor, method of fabricating the thin film transistor, organic light emitting diode display device, method of fabricating the organic light emitting diode display device, and donor substrate for laser induced thermal imaging
A thin film transistor (TFT), a method of fabricating the TFT, an organic light emitting diode (OLED) display device, a method of fabricating the OLED display device, and a donor substrate for...
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8120029 |
Thin film transistor and method of manufacturing the same
Disclosed is a thin film transistor (TFT). The TFT may include an intermediate layer between a channel and a source and drain. An increased off current, which may occur to a drain area of the TFT,...
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8120151 |
Optical semiconductor device and method for manufacturing the same
An optical semiconductor device can have a first lead for an optical semiconductor chip to be mounted on and a second lead for joining to a wire extending from the optical semiconductor chip. The...
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8120039 |
Semiconductor device
In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and...
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8119462 |
Method for forming conductive film, thin-film transistor, panel with thin-film transistor, and method for manufacturing thin-film transistor
A conductive film having high adhesion and low specific resistance is formed. A target containing copper as a main component is sputtered in vacuum ambience while an oxygen gas introduced, and...
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8115206 |
Semiconductor device
It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which...
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8115209 |
Dual gate layout for thin film transistor
A dual gate layout of a thin film transistor of liquid crystal display to alleviate dark current leakage is disclosed. The layout includes (1) a polysilicon on a substrate having a L-shaped or a...
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8115201 |
Semiconductor device with oxide semiconductor formed within
One of the objects of the present invention is to provide a thin film transistor using an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn), in which the contact...
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8115207 |
Vacuum channel transistor and diode emitting thermal cathode electrons, and method of manufacturing the vacuum channel transistor
Provided are a transistor and a method of manufacturing the transistor, and more particularly, a vacuum channel transistor emitting thermal cathode electrons and a method of manufacturing the...
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8115210 |
Semiconductor display device
A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long,...
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8110829 |
Array substrate of liquid crystal display and method for fabricating the same
A thin film transistor (TFT) for a liquid crystal display device includes a gate electrode, a source electrode, a drain electrode, an active region including a first semiconductor layer and a...
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8110852 |
Semiconductor integrated circuit device
A finger length a1 of a transistor P11 is longer than a finger length A1 of a transistor P1, and a finger length b1 of a transistor N11 is longer than a finger length B1 of a transistor N1. The...
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8106402 |
Flat panel display apparatus and method of manufacturing the same
A flat panel display apparatus that can be manufactured with less patterning operations using a mask, and a method of manufacturing the same, the flat panel display apparatus including a substrate;...
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8106398 |
Microcrystalline semiconductor film, thin film transistor, and display device including thin film transistor
A thin film transistor with excellent electric characteristics and a display device having the thin film transistor are proposed. The thin film transistor includes a gate insulating film formed...
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8101953 |
Thin film transistor having a plurality of carbon nanotubes
A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting...
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8101509 |
Semiconductor integrated circuit device
A method of fabricating a semiconductor integrated circuit includes forming a first dielectric layer on a semiconductor substrate, patterning the first dielectric layer to form a first patterned...
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8101948 |
Switching element
In a switching element using, for the active layer, a carbon nanotube (CNT) dispersed film which can be manufactured at low temperatures, the interaction between the CNT and the surface of the gate...
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8101947 |
System and method for manufacturing a thin-film device
A thin-film device includes a plurality of circuit components defining an operational region of the thin-film device, an unpatterned channel portion (108, 340) disposed on the plurality of circuit...
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8097499 |
Semiconductor device and methods thereof
A semiconductor device and method thereof. The example method may include forming a semiconductor device, including forming a first layer on a substrate, the first layer including aluminum nitride...
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8097880 |
Semiconductor component including a lateral transistor component
A semiconductor component including a lateral transistor component is disclosed. One embodiment provides an electrically insulating carrier layer. A first and a second semiconductor layer are...
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8097881 |
Thin film transistor substrate and a fabricating method thereof
An oxide semiconductor thin film transistor substrate includes a gate line and a gate electrode disposed on an insulating substrate, an oxide semiconductor pattern disposed adjacent to the gate...
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8093593 |
Semiconductor device having multichannel transistor
A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above...
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8089065 |
Organic thin film transistors
A method of forming an organic thin film transistor comprising: providing a structure comprising source and drain electrodes with a channel region therebetween, a gate electrode, and a dielectric...
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8089071 |
Thin film semiconductor device having crystal grain boundaries cyclically traversing a channel part and method for manufacturing same
A thin film semiconductor device is provided. The semiconductor device includes a semiconductor thin film configured to have an active region turned into a polycrystalline region through...
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