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Match Document Document Title
8182719 Pyroelectric compound and method of its preparation  
A novel pyroelectric compound is presented. The compound is inorganic, quasi-amorphous oxide compound of a metal, mixture of metals or semiconducting element.
8183566 Hetero-crystalline semiconductor device and method of making same  
A hetero-crystalline semiconductor device and a method of making the same include a non-single crystalline semiconductor layer and a nanostructure layer that comprises a single crystalline...
8178221 {100}<100> or 45°-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices  
Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45°-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications ...
8168968 Thin film transistor and organic light emitting display device using the same  
There is provided a thin film transistor exhibiting stable reliability and electrical characteristics by forming an active layer by adding material having a large difference of electronegativity...
8129215 Method for producing high temperature thin film silicon layer on glass  
A method for producing a High Temperature Thin Film Layer On Glass (HTTFLOG) of silicon, which is a precursor component of thin film transistors (TFTs). The invention described here is a superior...
8129732 Nitride semiconductor light-emitting device and method for fabrication thereof  
An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet...
8093593 Semiconductor device having multichannel transistor  
A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above...
8089071 Thin film semiconductor device having crystal grain boundaries cyclically traversing a channel part and method for manufacturing same  
A thin film semiconductor device is provided. The semiconductor device includes a semiconductor thin film configured to have an active region turned into a polycrystalline region through...
8058709 Semiconductor device and manufacturing method thereof  
It is an object of the present invention to control the plane orientation of crystal grains obtained by using a laser beam, into a direction that can be substantially regarded as one direction in...
8053776 Vertical diode and method for manufacturing same and semiconductor memory device  
In a vertical diode, an N+-type layer, an N−-type layer, and a P+-type layer are stacked in this order on a lower electrode film, and an upper electrode film is provided thereon. The effective i...
8039843 Semiconductor wafer, semiconductor device and method of fabricating the same  
A semiconductor substrate according to an embodiment includes: a first semiconductor wafer having a first crystal; and a second semiconductor wafer formed of a second crystal substantially same as...
8039844 Microcrystalline silicon thin film transistor and method for manufacturing the same  
This invention provides a top-gate microcrystalline thin film transistor and a method for manufacturing the same. An inversion layer channel is formed in a top interface of a microcrystalline...
8034671 Polysilicon film, thin film transistor using the same, and method for forming the same  
A crystallizing method for forming a poly-Si film is described as follows. First, forming an activated layer on a substrate, and the molecule structure of the activated layer includes carbon,...
8030745 ID chip and IC card  
The present invention provides an ID chip or an IC card in which the mechanical strength of an integrated circuit can be enhanced without suppressing a circuit scale. An ID chip or an IC card of...
8022408 Crystalline nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same  
Example embodiments relate to a crystalline nanowire substrate having a structure in which a crystalline nanowire film having a relatively fine line-width may be formed on a substrate, a method of...
8008170 Method for manufacturing semiconductor device  
There is provided a method for manufacturing a semiconductor device in which a selective growth mask for partially covering a growth substrate is formed on a growth substrate; a buffer layer that...
7999319 Trench-edge-defect-free recrystallization by edge-angle-optimized solid phase epitaxy: method and applications to hybrid orientation substrates  
The present invention discloses the use of edge-angle-optimized solid phase epitaxy for forming hybrid orientation substrates comprising changed-orientation Si device regions free of the...
7981701 Semiconductor thin film manufacturing method  
A method of forming a semiconductor thin film includes a highly sensitive inspection method for detecting lateral crystals and a crystallizing method. In the crystallizing method, the time-based...
7960801 Gate electrode stress control for finFET performance enhancement description  
A finFET and its method for fabrication include a gate electrode formed over a channel region of a semiconductor fin. The semiconductor fin has a crystallographic orientation and an axially...
7956360 Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy  
A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral...
7952097 Semiconductor device and method of fabricating the same  
A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island...
7943930 Semiconductor device forming method  
In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion...
7928438 Semiconductor thin film and semiconductor device  
After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen...
7919777 Bottom gate thin film transistor and method of manufacturing the same  
A method of manufacturing a bottom gate thin film transistor (“TFT”) in which a polycrystalline channel region having a large grain size is formed relatively simply and easily. The method of man...
7915103 Method for fabricating a flat panel display  
The method for fabricating a flat panel display includes performing a first crystallization process to re-crystallize an amorphous silicon layer on a glass substrate to make the amorphous silicon...
7910923 Semiconductor device  
A semiconductor device with superior long-term reliability is disclosed that alleviates current concentration into a switch structure arranged at an outermost portion. The semiconductor device...
7906415 Device having zinc oxide semiconductor and indium/zinc electrode  
An electronic device including: (a) a semiconductor layer including crystalline zinc oxide; and (b) an electrode including a suitable amount of zinc, indium, or a mixture thereof.
7906778 Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures  
Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures that include one or more nanowires are also disclosed. The nanowires can...
7902557 Semiconductor light emitting device and a method of manufacturing the same  
Disclosed is a semiconductor light emitting device comprising a seed layer, a first conductive semiconductor layer into which the seed layer is partially inserted, a first electrode electrically...
7897966 Method for manufacturing flat substrates  
For avoiding the metallic inner surface of a PECVD reactor to influence thickness uniformity and quality uniformity of a μc-Si layer (19) deposited on a large-surface substrate, (15) before each ...
7888780 Semiconductor structures incorporating multiple crystallographic planes and methods for fabrication thereof  
A semiconductor structure includes a semiconductor mesa located upon an isolating substrate. The semiconductor mesa includes a first end that includes a first doped region separated from a second...
7888250 Method and apparatus for activating compound semiconductor  
A compound semiconductor is placed in a reaction vessel (12) of which the inner gas is subjected to replacement with a low-vapor-pressure gas (2) whose equilibrium vapor pressure at the melting...
7884367 Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate  
A polycrystalline Si thin film and a single crystal Si thin film are formed on an SiO2 film deposited on an insulating substrate. A polycrystalline Si layer is grown by thermally crystallizing an...
7875884 Hetero-crystalline structure and method of making same  
A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single...
7863617 Active matrix type display device and method of manufacturing the same  
A method of manufacturing an active matrix type display device, which is reliable and flexible, is provided. An active matrix type display device according to an aspect of the present invention...
7859055 Thin film transistor  
To provide: a thin film transistor which can be operated with a low threshold and has a high transistor withstand voltage; a production method of the thin film transistor; and a semiconductor...
7851695 Stacked-type photoelectric conversion device  
The present invention makes it possible to provide a stacked-type thin-film photoelectric conversion device having high photostability, at a high yield rate and significantly reduced production...
7847293 Growth of reduced dislocation density non-polar gallium nitride  
Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.
7838397 Process and system for laser annealing and laser-annealed semiconductor film  
In a laser annealing process: the first to fourth sections of a bandlike area of a nonmonocrystalline semiconductor film are consecutively scanned and irradiated with laser light so as to produce a...
7834425 Hybrid orientation SOI substrates, and method for forming the same  
The present invention relates to a hybrid orientation semiconductor-on-insulator (SOI) substrate structure that contains a base semiconductor substrate with one or more first device regions and one...
7816680 Oxide semiconductors and thin film transistors comprising the same  
Provided are oxide semiconductors and thin film transistors of the same. An oxide semiconductor includes Zn, In and Hf. The amount of Hf is in the range of about 2-16 at %, inclusive, based on the...
7800081 Pulse train annealing method and apparatus  
The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are...
7795734 Semiconductor device and method of manufacturing the same  
To provide a semiconductor device composed of a semiconductor element or a group of semiconductor elements, in which a crystalline semiconductor film having as few grain boundaries as possible in a...
7786503 Gallium nitride crystals and wafers and method of making  
A crystal comprising gallium nitride is disclosed. The crystal has at least one grain having at least one dimension greater than 2.75 mm, a dislocation density less than about 104 cm−2, and is s...
7777226 Polycrystalline silicon thin film, fabrication method thereof, and thin film transistor without directional dependency on active channels fabricated using the same  
A polycrystalline silicon thin film to be used in display devices, the thin film comprising adjacent primary grain boundaries that are not parallel to each other and do not contact each other,...
7772592 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Semiconductor thin film and semiconductor device  
After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen...
7772486 Photovoltaic device  
The present invention provides a photovoltaic device capable of keeping reduction of the yield in modularization in check. This photovoltaic device comprises a transparent conductive film, and a...
7759175 Fabrication method of a mixed substrate and use of the substrate for producing circuits  
The fabrication method of a mixed substrate comprising a tensile strained silicon-on-insulator portion and a compressive strained germanium-on-insulator portion comprises a first step of producing...
7759749 Metal material, and coating film and wiring for semiconductor integrated circuitry utilizing the metal material  
When metallic material is employed for various metallic films, it is possible to improve at least one of the mechanical strength, the durability against abrasion, and the uniformess as a film while...
7755172 Opto-electronic and electronic devices using N-face or M-plane GaN substrate prepared with ammonothermal growth  
A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia...
Matches 1 - 50 out of 314 1 2 3 4 5 6 7 >