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7615424 |
Laser irradiation apparatus and method for manufacturing semiconductor device using the laser irradiation apparatus
An object of the present invention is to provide a laser irradiation method being able to control the irradiation position of the laser beam accurately compared with the conventional irradiation...
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7608857 |
Field effect transistor having a structure in which an organic semiconductor that forms a channel is made of a single crystal or a polycrystal of organic molecules
A TFT having a large mobility of carriers that are conducted through a channel as compared with a conventional organic TFT, and a method of manufacturing the TFT inexpensively and easily are...
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7608530 |
Hetero-crystalline structure and method of making same
A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single...
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7601983 |
Transistor and method of manufacturing the same
A transistor includes a semiconductor substrate that has a first surface of a {100} crystal plane, a second surface of the {100} crystal plane having a height lower than that of the first surface,...
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7569462 |
Directional crystallization of silicon sheets using rapid thermal processing
The present invention provides a method of recrystallizing a silicon sheet, and in particular recrystallizing a small grained silicon sheet to improve material properties such as grain size and...
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7557374 |
Substrates and methods for fabricating the same
An embodiment of the invention provides a substrate. The substrate comprises a single crystal substrate. An epitaxial buffer film is on the single crystal substrate. An epitaxial ZnGa 2 O 4 is on...
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7547914 |
Single-crystal layer on a dielectric layer
The process relates to the production of a layer of a single-crystal first material on a second material. The second material has at least one aperture exposing a surface portion of a...
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7528408 |
Semiconductor thin film and process for production thereof
To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is...
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7521712 |
Thin film semiconductor device
A thin film semiconductor device is provided that includes a semiconductor thin film and a gate electrode. The semiconductor thin film has an active region turned into a polycrystalline region...
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7495313 |
Germanium substrate-type materials and approach therefor
Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as...
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7491972 |
Polysilicon semiconductor thin film substrate, method for producing the same, semiconductor device, and electronic device
A semiconductor device and a method of manufacture thereof by forming an amorphous semiconductor film on the surface of an insulative substrate, and irradiating the amorphous semiconductor film...
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7488980 |
Thin film semiconductor device and fabrication method therefor
A relaying pad is formed in a predetermined portion in an insulation layer of the single-crystal thin film device, in a region where the single-crystal thin film device is formed. The relaying pad...
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7485552 |
Thin film transistor and method of fabricating the same
A thin film transistor and method of fabricating the same are provided. The thin film transistor is characterized in that low angle grain boundaries formed in a channel layer in a semiconductor...
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7482274 |
Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist...
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7456428 |
Manufacturing method of semiconductor film and image display device
A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film...
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7442958 |
Thin film semiconductor device
A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel...
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7442594 |
Method for manufacturing a flat panel display with improved white balance
Disclosed is a flat panel display capable of improving a white balance by making channel regions of transistors of R, G, and B unit pixels with different current mobilities. The flat panel display...
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7439542 |
Hybrid orientation CMOS with partial insulation process
The present invention provides a method of integrated semiconductor devices such that different types of devices are formed upon a specific crystallographic orientation of a hybrid substrate. In...
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7439110 |
Strained HOT (hybrid orientation technology) MOSFETs
A strained HOT MOSFET fabrication method. The MOSFET fabrication method includes providing a semiconductor structure which includes (a) a first semiconductor layer having a first crystallographic...
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7432149 |
CMOS on SOI substrates with hybrid crystal orientations
Methods and structures for CMOS devices with hybrid crystal orientations using double SOI substrates is provided. In accordance with preferred embodiments, a manufacturing sequence includes the...
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7372073 |
Semiconductor thin film, semiconductor device and manufacturing method thereof
A semiconductor device includes a substrate having an insulating film on its surface, and ac active layer made of a semiconductive thin film on the substrate surface. The thin film contains a...
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7365358 |
Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device
A method of fabricating a single crystal thin film includes forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment,...
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7339255 |
Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes
A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a...
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7317207 |
Semiconductor device, method of making the same and liquid crystal display device
To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device...
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7312471 |
Liquid crystal display device having drive circuit and fabricating method thereof
A thin film transistor and a fabricating method of a thin film transistor for a liquid crystal display device includes forming a polycrystalline silicon film on a substrate, the polycrystalline...
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7307282 |
Thin film transistors and semiconductor device
The TFT has a channel-forming region formed of a crystalline semiconductor film obtained by heat-treating and crystallizing an amorphous semiconductor film containing silicon as a main component...
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7297980 |
Flat panel display device with polycrystalline silicon thin film transistor
The present invention relates to a flat panel display device comprising a polycrystalline silicon thin film transistor and provides a flat panel display device having improved characteristics by...
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7288791 |
Epitaxial wafer and method for manufacturing method
It is an object of the present invention to provide an epitaxial wafer with fewer pit defects in the epitaxial layer of a silicon monocrystalline wafer that has been doped with arsenic. Pit defects...
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7282738 |
Fabrication of crystalline materials over substrates
A method of forming crystalline or polycrystalline layers includes providing a substrate and a patterning over the substrate. The method also includes providing nucleation material and forming the...
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7262431 |
Semiconductor thin film forming method and semiconductor device
A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14 , and the step of flowing a heated gas to the semiconductor thin film while an...
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7250375 |
Substrate processing method and material for electronic device
A method of processing a for an electronic device, comprising, at least: a nitridation step (a) of supplying nitrogen radicals on the surface of the electronic device substrate, to thereby form a...
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7247880 |
Thin film transistor with low angle grain boundaries in a channel layer
A thin film transistor includes a substrate, a semiconductor layer pattern on the substrate, a gate insulating layer on the semiconductor layer pattern, and a gate electrode on a gate insulating...
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7235811 |
Thin film structure from LILAC annealing
A system and method are provided for reducing film surface protrusions in the fabrication of LILAC films. The method comprises: forming an amorphous film with a first thickness; annealing the film...
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7227186 |
Thin film transistor and method of manufacturing the same
An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of...
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7217952 |
Method of manufacturing a semiconductor device and semiconductor manufacturing apparatus
A technique for manufacturing TFTs having little dispersion in their electrical characteristics is provided. Contamination of a semiconductor film is reduced by performing oxidation processing...
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7205203 |
Method of fabricating crystalline silicon and switching device using crystalline silicon
A method of forming a crystalline silicon layer that includes forming a semiconductor layer of amorphous silicon on a substrate having a first region and a second region at a periphery of the first...
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7202499 |
Semiconductor device including two transistors and capacitive part
An object of the present invention is to provide a TFT of new structure in which the gate electrode overlaps with the LDD region and a TFT of such structure in which the gate electrode does not...
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7183585 |
Semiconductor device and a method for the manufacture thereof
To provide a semiconductor device that excels in the manufacturing efficiency and device reliability, and a method for the manufacture thereof. The side of a device is composed of scribed grooves ...
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7183571 |
Polycrystalline silicon thin film, fabrication method thereof, and thin film transistor without directional dependency on active channels fabricated using the same
A polycrystalline silicon thin film to be used in display devices, the thin film having adjacent primary grain boundaries that are not parallel to each other, wherein an area surrounded by the...
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7164152 |
Laser-irradiated thin films having variable thickness
A crystalline film includes a first crystalline region having a first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a...
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7157737 |
Structures with seeded single-crystal domains
Single-crystal devices and a method for forming semiconductor film single-crystal domains are provided. The method comprises: forming a substrate, such as glass or Si; forming an insulator film...
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7148507 |
Semiconductor device having thin film transistor with position controlled channel formation region
A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain...
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7145175 |
Semiconductor circuit and method of fabricating the same
According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same...
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7129522 |
Semiconductor device and its manufacturing method
Protrusions called ridges are formed on the surface of a crystalline semiconductor film formed by a laser crystallization method or the like. A heat absorbing layer are formed below a semiconductor...
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7119365 |
Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
A polycrystalline Si thin film and a single crystal Si thin film are formed on an SiO 2 film deposited on an insulating substrate. A polycrystalline Si layer is grown by thermally crystallizing an...
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7115903 |
Semiconductor device and semiconductor device producing system
An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where...
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7105392 |
Semiconductor device and method of manufacturing the same
An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is...
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7102166 |
Hybrid orientation field effect transistors (FETs)
A hybrid orientation semiconductor structure and method of forming the same. The structure includes (a) a semiconductor substrate comprising a first semiconductor material having a first lattice...
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7098487 |
Gallium nitride crystal and method of making same
There is provided a GaN single crystal at least about 2 millimeters in diameter, with a dislocation density less than about 10 4 cm −1 , and having no tilt boundaries. A method of forming a GaN...
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7045819 |
Semiconductor device and method for manufacturing the same
A silicon film is crystallized in a predetermined direction by selectively adding a metal element having a catalytic action for crystallizing an amorphous silicon and annealing. In manufacturing...
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