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7595545 |
Anodic bonding apparatus, anodic bonding method, and method of producing acceleration sensor
An anodic bonding apparatus includes a first electrode and a second electrode. The first electrode has a first surface, and the second electrode has a second surface facing the first surface. The...
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7531891 |
Semiconductor device
A semiconductor device having improved adhesiveness between films composing an interlayer insulating film is presented by providing multilayered films in the interlayer insulating films having film...
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7482267 |
Ion implantation of spin on glass materials
A spin on glass SOG layer 30 is formed, then a PECVD barrier layer 40 over the SOG layer. Holes 50 in the SOG layer for vias are formed with a wine glass profile, so that in a peripheral...
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7429789 |
Fluoropolymer dielectric composition for use in circuitized substrates and circuitized substrate including same
A dielectric composition for forming a dielectric layer usable in circuitized substrates such as PCBs, chip carriers and the like, the composition including at least two fluoropolymers and two...
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7405466 |
Method of fabricating microelectromechanical system structures
A method of simultaneously bonding components, comprising the following steps. At least first, second and third components are provided and comprise: at least one glass component; and at least one...
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7358587 |
Semiconductor structures
In one aspect, the invention includes a method of forming a material within an opening, comprising: a) forming an etch-stop layer over a substrate, the etch-stop layer having an opening extending...
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7294909 |
Electronic package repair process
A multilayer ceramic repair process which provides a new electrical repair path to connect top surface vias. The repair path is established between a defective net and a redundant repair net...
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RE39690 |
Enhanced planarization technique for an integrated circuit
A method for planarizing integrated circuit topographies, wherein, after a first layer of spin-on glass is deposited, a layer of low-temperature oxide is deposited before a second layer of spin-on...
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7075187 |
Coating material over electrodes to support organic synthesis
There is disclosed a coating material formulation for layering a plurality of electrodes to provide a substrate for the electrochemical synthesis of organic oligomers. Specifically, there is...
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7030468 |
Low k and ultra low k SiCOH dielectric films and methods to form the same
Dielectric materials including elements of Si, C, O and H having specific values of mechanical properties (tensile stress, elastic modulus, hardness cohesive strength, crack velocity in water) that...
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7026256 |
Method for forming flowable dielectric layer in semiconductor device
The method for forming a flowable dielectric layer without micro-voids therein in a semiconductor device is employed to utilize a ultra-violet (UV) bake process. The method includes steps of:...
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6995691 |
Bonded structure using reacted borosilicate mixture
Environmental sensors and other bodies, together with associated lead wires, are mounted to a oxidizable substrate for high temperature applications by means of a reacted borosilicate mixture (RBM)...
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6924868 |
Liquid crystal display device, method for fabricating the same, and portable telephone using the same
A liquid crystal display device comprises a liquid crystal display panel and a semiconductor integrated circuit for driving and controlling the liquid crystal display panel. The number of...
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6864561 |
Method and apparatus for reducing fixed charge in semiconductor device layers
The fixed charge in a borophosphosilicate glass insulating film deposited on a semiconductor device is reduced by reacting an organic precursor such as TEOS with O 3 . When done at temperatures...
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6844612 |
Low dielectric constant fluorine-doped silica glass film for use in integrated circuit chips and method of forming the same
A fluorine-doped silica glass (FSG) dielectric layer includes a number of sublayers. Each sublayer is doped with fluorine in such a way that the doping concentration of fluorine in the sublayer...
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6791163 |
Chip electronic component
A chip electronic component including a ceramic element and terminal electrodes with metal coating thereon formed on the surface of the ceramic element. A glass layer is formed on a part of the...
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6747338 |
Composite dielectric with improved etch selectivity for high voltage MEMS structures
A method of manufacturing MEMS structures and devices that allows the fabrication of dielectric structures with improved etch selectivity and good electrical leakage characteristics. The dielectric...
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6670022 |
Nanoporous dielectric films with graded density and process for making such films
The present invention relates to nanoporous dielectric films and to a process for their manufacture. A substrate having a plurality of raised lines on its surface is provided with a relatively high...
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6653718 |
Dielectric films for narrow gap-fill applications
A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material...
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6620534 |
Film having enhanced reflow characteristics at low thermal budget
A method of forming a film having enhanced reflow characteristics at low thermal budget is disclosed, in which a surface layer of material is formed above a base layer of material, the surface...
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6509627 |
Flowable germanium doped silicate glass for use as a spacer oxide
The invention is a method for constructing an integrated circuit structure and an apparatus produced by the method. The method generally comprises constructing an integrated circuit structure by...
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6500740 |
Process for fabricating semiconductor devices in which the distribution of dopants is controlled
In accordance with the invention, a silicon gate field effect device is provided with improved control over the distribution of dopants by forming thin buried layer of oxide within the silicon...
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6483173 |
Solution to black diamond film delamination problem
Low k dielectrics such as black diamond have a tendency to delaminate from the edges of a silicon wafer, causing multiple problems, including blinding of the alignment mark. This problem has been...
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6462402 |
Microelectronic substrate comprised of etch stop layer, stiffening layer, and endpointing layer
A method and apparatus for endpointing a planarization process of a microelectronic substrate. In one embodiment, the microelectronic substrate can include a semiconductor base, a first material,...
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6455395 |
Method of fabricating silicon structures including fixtures for supporting wafers
A method of fabricating the parts and assembling them into a complex structure, such as a silicon tower or boat for removably supporting a plurality of silicon wafers during thermal processing. A...
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6433387 |
Lateral bipolar transistor
Lateral bipolar transistor, in which a thin diffusion barrier ( 4 ) is applied to a base region ( 10 ) between an emitter region ( 9 ) and a collector region ( 11 ), and there is present, on said...
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6388309 |
Apparatus and method for manufacturing semiconductors using low dielectric constant materials
An ultra-large scale integrated circuit is manufactured by using silicon-based, low dielectric constant materials which are spin-coated, dried, cured, and capped in-situ in chemical vapor...
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6379785 |
Glass-coated substrates for high frequency applications
A substrate, preferably silicon, or other suitable material has a layer of glass material disposed thereon. The glass material of the present disclosure has a substantially increased uniformity due...
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6320246 |
Semiconductor wafer assemblies
The invention includes a semiconductor wafer assembly, comprising: a) a semiconductor wafer substrate; and b) alternating first and second layers over the semiconductor wafer substrate, the...
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6236105 |
Semiconductor device with improved planarity achieved through interlayer films with varying ozone concentrations
A semiconductor device includes an interlayer insulating film disposed between upper and lower wiring layers, the interlayer insulating film having a two-layered structure including an upper...
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6232647 |
Air gap with borderless contact
A semiconductor structure having a first conductive trace fabricated adjacent to a second conductive trace over an insulating layer. A dielectric material is located over and between the first and...
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6215161 |
Insulator structure for polysilicon resistors
A polysilicon resistor structure for use within integrated circuits and a method by which the polysilicon resistor structure may be formed. A first insulating layer which is formed from a glasseous...
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6165915 |
Forming halogen doped glass dielectric layer with enhanced stability
Within a method for forming a halogen doped glass layer, such as a fluorosilicate glass (FSG) layer, there is first provided a substrate. There is then formed over the substrate a first halogen...
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6097079 |
Boron implanted dielectric structure
An interlevel dielectric and a method for making same wherein boron is introduced into the dielectric though an implantation process. During the implantation process, either the boron-10 or the...
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6051876 |
Semiconductor device with a graded passivation layer
The formation of a graded passivation layer is disclosed. In one embodiment, a method includes four steps. In the first step, at least one transistor on a semiconductor substrate is provided. In...
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6051875 |
Semiconductor chip
A method of processing a semiconductive material wafer includes, a) providing a semiconductive material wafer having integrated circuitry fabricated within discrete die areas on the wafer, the...
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6025260 |
Method for fabricating air gap with borderless contact
A semiconductor structure having a first conductive trace fabricated adjacent to a second conductive trace over an insulating layer. A dielectric material is located over and between the first and...
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5936301 |
Crack resistant passivation layer
A method for making a device and the device itself which utilizes a passivation layer displaying improved crack resistance is disclosed. This is accomplished through the incorporation of boron into...
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5904576 |
Method of forming wiring structure
After wiring patterns are formed on an insulating film covering the surface of a substrate, an insulating film such as plasma CVD SiO 2 is formed covering the wiring patterns. A hydrogen...
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5892269 |
Semiconductor device including an intrusion film layer
A semiconductor device including an insulation film superior in both planarization and water resistance is obtained. In this semiconductor device, a first insulation film including impurities is...
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5864172 |
Low dielectric constant insulation layer for integrated circuit structure and method of making same
A low dielectric insulation layer for an integrated circuit structure material, and a method of making same, are disclosed. The low dielectric constant insulation layer comprises a porous...
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5818094 |
Package for housing a semiconductor element
A semiconductor element-housing package which hermetically houses a semiconductor element for protection against moisture in the atmosphere by bonding an insulating substrate and a lid by means of...
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5786625 |
Moisture resistant semiconductor device
A MOS type transistor with a gate is formed on the surface of a semiconductor substrate, and thereafter an interlayer insulating film and a first level wiring layer on the insulating film are...
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5739580 |
Oxide formed in semiconductor substrate by implantation of substrate with a noble gas prior to oxidation
A process and resulting product is described for forming an oxide in a semiconductor substrate which comprises initially implanting the substrate with atoms of a noble gas, then oxidizing the...
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5716890 |
Structure and method for fabricating an interlayer insulating film
The present invention provides a structure and method of manufacturing an interlevel/intermetal dielectric layer for a semiconductor device. The method begins by forming a stepped pattern 16 on a...
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5714798 |
Selective deposition process
Disclosed is a process for depositing a conformal polymer coating on selected areas of a silicon substrate. The substrate is first exposed through a mask to a gaseous plasma so as to form a film of...
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5672907 |
Semiconductor device having character in BPSG film
A semiconductor device in which the elution quantity of boron and phosphorus from a BPSG film in a process of washing a wafer is controlled low so as to realize sufficient flattening and in which a...
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5639325 |
Process for producing a glass-coated article
A process for producing a glass-coated article having a silicon substrate and the article produced thereby are provided. According to the process of the present invention, a layer of glass wetting...
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5554884 |
Multilevel metallization process for use in fabricating microelectronic devices
A multilevel metallization is deposited on a microelectronic device base structure (40). The process includes depositing a glassy dielectric layer (48) of a thickness that is from about two to...
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5541445 |
High performance passivation for semiconductor devices
A method of passivating a semiconductor device, comprises depositing a first dielectric passivation layer on the surface of the device, forming at least one planarization layer over the first...
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