Matches 51 - 87 out of 87 < 1 2
Match Document Document Title
5440166 Planarized isolation structure for CMOS devices  
A field oxide structure is formed within a cavity formed in a semiconductor substrate. The cavity has a U-shaped cross section. A layer of thermal oxide covers the walls and bottom of the cavity,...
5365081 Semiconductor device incorporating thermally contracted film  
A semiconductor device and a method for forming the same. The semiconductor device comprises an insulating or semiconductor substrate, a thermally-contractive insulating film which is formed on...
5306936 Non-volatile semiconductor memory device having oxynitride film for preventing charge in floating gate from loss  
An electrically programmable read only memory device store data bits in the form of electric charges accumulated in floating gate electrodes of the memory cells, and a spin-on glass film is...
5218214 Field oxide termination and gate oxide  
An integrated circuit has a silicon mesa disposed on a substrate and a field insulator structure in proximity to the mesa and having an opening over a top mesa surface. The opening, which exposes...
5162881 Dynamic random access memory device having rampart structure outside memory cell array  
A semiconductor memory device is fabricated on a semiconductor substrate and comprises a memory cell array having a plurality of memory cells and located in a predetermined cell area of the...
5114874 Method of making a sub-micron NMOS, PMOS and CMOS devices with methods for forming sub-micron contacts  
The sub-micron NMOS, PMOS and CMOS devices with methods for forming sub-micron contacts provide sub-micron devices and processes for manufacturing them with contacts down to 0.1 microns or less....
4855801 Transistor varactor for dynamics semiconductor storage means  
A transistor varactor for dynamic semiconductor storage means which are formed on a doped silicon substrate having a high integration density and which includes one field effect transistor which...
4847667 Ultraviolet erasable nonvolatile semiconductor memory device  
In a step of forming an interlayer insulation film between memory elements in an ultraviolet erasable nonvolatile semiconductor memory device and an upper metal wiring layer, a thermal oxide film...
4835597 Semiconductor device having improved multi-layer structure of insulating film and conductive film  
A semiconductor device comprises a semiconductor substrate, an insulating film formed on a major surface of the substrate a lower wiring layer formed on the insulating film, a borophosphosilicate...
4809055 Semiconductor device having an electrode and a method of manufacturing the same  
An SiO 2 insulating layer is formed on an Si substrate, and an Si 3 N 4 insulating layer is formed on the SiO 2 layer. A notch is formed in the Si 3 N 4 layer using a resist film as a mask....
4755479 Manufacturing method of insulated gate field effect transistor using reflowable sidewall spacers  
With an increase of integration density in an integrated circuit, the channel length of MIS FET becomes shorter and shorter, which causes a hot carrier effect. To solve the problem, the doping...
4717631 Silicon oxynitride passivated semiconductor body and method of making same  
A semiconductor body with an improved passivating layer is disclosed. In one embodiment, the body is a device comprising a semiconductor material having regions of opposite conductivity types which...
4675716 Insulator coating for improved step coverage in VLSI devices  
In manufacture of VLSI semiconductor devices, the insulator surface upon which a metallization pattern is deposited is made more smooth by the deposition of a thin insulator in liquid form. This...
4668973 Semiconductor device passivated with phosphosilicate glass over silicon nitride  
The semiconductor device includes a layer of silicon nitride (Si 3 N 4 ) beneath a phosphosilicate glass (PSG) layer. A silicon nitride impervious layer prevents the oxidation of underlying,...
4490737 Smooth glass insulating film over interconnects on an integrated circuit  
A low temperature insulating glass for use in semiconductor devices comprises a mixture of germanium, silicon, oxygen and phosphorus. In the preferred embodiment, the glass comprises a mixture of...
4412242 Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions  
Two gaps are placed in the reflowed phosphorus-doped silicon dioxide material overcoating of a planar high voltage semiconductor device to prevent polarization of the reflowed silox. The invention...
4374391 Device fabrication procedure  
A fabrication technique is described for making various devices in which a type of glass is used as a surface protection layer. The glass layers are put down by particle bombardment (generally...
4317086 Passivation and reflector structure for electroluminescent devices  
A passivation layer of perylene and its incorporation in three layer reflector structure deposited on the light emitting surface of a semiconductor electroluminescent device is disclosed. The...
4105810 Chemical vapor deposition methods of depositing zinc boro-silicated glasses  
An alkyl compound of zinc is reacted with alkyl compounds or alkoxyl compounds of boron and silicon in the presence of oxygen, thereby to deposit on a substrate zinc borosilicate glass film through...
4077819 Technique for passivating semiconductor devices  
The specification discloses a technique for passivating a semiconductor device which includes exposing a P-N junction in a multilayered semiconductor body. A mixture of glass and gold is prepared...
4073657 Glass for semiconductors  
An insulating or passivation glass consisting of 36 to 40 volume percent zircon and the balance is a base glass consisting essentially of 2 to 6 percent-SiO 2 , 70 to 75 percent-PbO 5 to 9...
3913126 Silicon dioxide etch rate control by controlled additions of p2 O 2 O3  
A method of making an integrated circuit in which controlled chemical etching of silicon dioxide layers is achieved by the controlled addition of both phosphorus pentoxide and boron trioxide to the...
3900330 ZnO-B2 O3 -SiO2 Glass coating compositions containing Ta O5 and a semiconductor device coated with the same  
A coating glass consists essentially, by weight, of 45 .about. 70% ZnO, 15 .about. 35% B 2 O 3 , 3.5 .about. 15% SiO 2 , 0.1 .about. 25% Ta 2 O 5 . The total amounts of ZnO, B 2 O 3 , SiO 2 and...
3715244 CHROMIUM FILM MICROCIRCUIT MASK  
Improved chromium film glass based articles having a low incidence of film surface defects, and highly hardened extremely scratch and wear resistant quality. The method includes the use of a...
3664895 METHOD OF FORMING A CAMERA TUBE DIODE ARRAY TARGET BY MASKING AND DIFFUSION  
Silicon diode array vidicon targets characterized by a silicon oxide insulator disposed between P-type conductivity regions forming discrete diodes within an N-type conductivity wafer have been...
3632433 METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE  
A first insulating film of silicon dioxide is provided on the surface of a semiconductor device, and a second silicon dioxide layer containing uniformly a small amount of phosphorus is deposited...
3615941 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH PASSIVATION FILM  
A method for manufacturing a semiconductor device whose surface is passivated by a silicon oxide film, forming a pyrolytic silicon oxide film on the surface of a semiconductor substrate at a...
3615943 DEPOSITION OF DOPED AND UNDOPED SILICA FILMS ON SEMICONDUCTOR SURFACES  
Deposition of a silica film on a semiconductor surface is effected by applying, on the surface, a thin film of a solution of silicon acetate in an inert solvent, and heating the coated surface at a...
3546013 METHOD OF PROVIDING PROTECTIVE COVERINGS FOR SEMICONDUCTORS  
3514848 METHOD OF MAKING A SEMICONDUCTOR DEVICE WITH PROTECTIVE GLASS SEALING  
3510728 ISOLATION OF MULTIPLE LAYER METAL CIRCUITS WITH LOW TEMPERATURE PHOSPHORUS SILICATES  
3496631 MANUFACTURE OF SEMI-CONDUCTOR DEVICES  
3432405 SELECTIVE MASKING METHOD OF SILICON DURING ANODIZATION  
3426253 SOLID STATE DEVICE WITH REDUCED LEAKAGE CURRENT AT N-P JUNCTIONS OVER WHICH ELECTRODES PASS  
3415680 Objects provided with protective coverings  
3339274 Top contact for surface protected semiconductor devices  
3825442 Title is not available  
Matches 51 - 87 out of 87 < 1 2