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7622396 Method of producing a semiconductor device  
A semiconductor device is produced by providing a reaction chamber with a substrate and sequentially repeating steps of: supplying a first kind of gas into the reaction chamber, exhausting the...
7615500 Method for depositing film and method for manufacturing semiconductor device  
A method for depositing a film includes: (a) processing a wafer, including forming a high dielectric constant film on a first wafer; and achieving nitridation of the high dielectric constant film...
7608912 Technique for creating different mechanical strain in different CPU regions by forming an etch stop layer having differently modified intrinsic stress  
The present invention provides a technique for reducing stress or stress gradients in highly sensitive device regions, such as cache areas, while still providing high transistor performance in...
7605436 Manufacture of semiconductor device having insulation film of high dielectric constant  
A method contains the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, nitridizing gas, and nitridation enhancing gas to a...
7589397 System and method for providing a uniform oxide layer over a laser trimmed fuse with a differential wet etch stop technique  
A system and method is disclosed for using a differential wet etch stop technique to provide a uniform oxide layer over a metal layer in a laser trimmed fuse. A layer of boron doped oxide with a...
7585785 Sacrificial benzocyclobutene copolymers for making air gap semiconductor devices  
A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor...
7564120 Electrical passivation of silicon-containing surfaces using organic layers  
Electrical structures and devices may be formed and include an organic passivating layer that is chemically bonded to a silicon-containing semiconductor material to improve the electrical...
7554200 Semiconductor devices including porous insulators  
Semiconductor devices with porous insulative materials are disclosed. The porous insulative materials may include a consolidated material with voids dispersed therethrough. The voids may be defined...
7550397 Method of manufacturing a semiconductor device having a pre-metal dielectric liner  
Embodiments relate to a semiconductor device and a method of manufacturing a semiconductor device having a pre-metal dielectric liner. In embodiments, method for forming a semiconductor device may...
7525144 Insulating film and semiconductor device  
An insulating film includes an oxide of a metal selected from Hf and Zr, the oxide being doped by at least one of Ba, Sr and Mg. And the insulating film satisfies the following formula (1): ...
7517813 Two-step oxidation process for semiconductor wafers  
An efficient method for the thermal oxidation of preferably silicon semiconductor wafers using LOCOS (local oxidation of silicon) processes is described. The mechanical stresses of the wafers are...
7511360 Semiconductor device having stressors and method for forming  
N channel and P channel transistors are enhanced by applying stressor layers of tensile and compressive, respectively, over them. A previously unknown problem was discovered concerning the two...
7498662 Dielectric media including surface-treated metal oxide particles  
Briefly, the present invention provides an electronic device, typically a transistor or a capacitor, comprising at least one electrically conductive electrode and, adjacent to the electrode, a...
7489020 Semiconductor wafer assemblies  
An elevated containment structure in the shape of a wafer edge ring surrounding a surface of a semiconductor wafer is disclosed, as well as methods of forming and using such a structure. In one...
7482676 Compositions for preparing low dielectric materials  
Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as...
7473652 Organic polymers, electronic devices, and methods  
Organic polymers for use in electronic devices, wherein the polymer includes repeat units of the formula: wherein: each R 1 is independently H, an aryl group, Cl, Br, I, or an organic group...
7470634 Method for forming interlayer dielectric film for semiconductor device by using polyhedral molecular silsesquioxane  
Disclosed herein is a method for forming an interlayer dielectric film for a semiconductor device by using a polyhedral molecular silsesquioxane. According to the method, the polyhedral molecular...
7470974 Substantially transparent material for use with light-emitting device  
The invention provides a substantially transparent material comprising particles of an inorganic titanate or an inorganic zirconate and at least one compound, wherein the particles are uniformly...
7466008 BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture  
A BiCMOS device with enhanced performance by mechanical uniaxial strain is provided. A first embodiment of the present invention includes an NMOS transistor, a PMOS transistor, and a bipolar...
7456474 Semiconductor device having insulating film  
Channel doping is an effective method for controlling V th , but if V th shifts to the order of −4 to −3 V when forming circuits such as a CMOS circuit formed from both an n-channel TFT and a...
7446284 Etch resistant wafer processing apparatus and method for producing the same  
A wafer processing apparatus is fabricated by depositing a film electrode onto the surface of a base substrate, the structure is then overcoated with a protective coating film layer comprising at...
7446394 Semiconductor device fabricated by selective epitaxial growth method  
A semiconductor device in which selectivity in epitaxial growth is improved. There is provided a semiconductor device comprising a gate electrode formed over an Si substrate, which is a...
7423330 Semiconductor device with strain  
A semiconductor device includes: a semiconductor substrate having a p-MOS region; an element isolation region formed in a surface portion of the semiconductor substrate and defining p-MOS active...
7417305 Electronic devices at the wafer level having front side and edge protection material and systems including the devices  
Methods for applying a dielectric protective layer to a wafer in wafer-level chip scale package manufacture are disclosed. A flowable dielectric protective material with fluxing capability is...
7411275 Semiconductor device comprising an inorganic insulating film and method of manufacturing the same  
It is an object to provide an insulating film having a very low dielectric constant and a great mechanical strength. Moreover, it is another object to provide a semiconductor device capable of...
7400031 Asymmetrically stressed CMOS FinFET  
A CMOS device comprising a FinFET comprises at least one fin structure comprising a source region; a drain region; and a channel region comprising silicon separating the source region from the...
7385276 Semiconductor device, and method for manufacturing the same  
The invention is characterized by attaining a lower dielectric constant and including an inorganic dielectric film which is formed on the surface of a substrate and has a cyclic porous structure...
7368336 Organic insulator, organic thin film transistor array panel including organic insulator, and manufacturing method therefor  
An insulating film according to an embodiment of the present invention has Chemical Formula 1 wherein the Rs are equal to or different from each other, m is an integer, the Rs have...
7364989 Strain control of epitaxial oxide films using virtual substrates  
A method of controlling strain in a single-crystal, epitaxial oxide film, includes preparing a silicon substrate; forming a silicon alloy layer taken from the group of silicon alloy layer...
7357977 Ultralow dielectric constant layer with controlled biaxial stress  
A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and...
7345368 Semiconductor device and the manufacturing method for the same  
A semiconductor device has a semiconductor substrate having first and second surface, a first resin film formed on the first surface of the semiconductor substrate and a second resin film formed on...
7345351 Coating composition for insulating film production, preparation method of insulation film by using the same, insulation film for semi-conductor device prepared therefrom, and semi-conductor device comprising the same  
The present invention relates to a coating composition for insulating film production, a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for...
7340372 Apparatus and method for investigating parameters of layers deposited on semiconductor wafers  
In order to determine the dielectric constant of a layer deposited on a semiconductor wafer ( 2 ), the density of the layer is obtained. To obtain that density, the wafer ( 2 ) without the layer is...
7332756 Damascene gate structure with a resistive device  
A semiconductor structure having a damascene gate structure and a resistive device on a semiconductor substrate is disclosed. The structure includes a first dielectric layer having a first opening...
7316949 Integrating n-type and p-type metal gate transistors  
At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS)...
7298023 Electronic device with organic insulator  
The invention concerns an insulator for an organic electronic component, in particular, for an organic field-effect transistor (OFET) or for an organic capacitor. The insulating material is...
7285842 Siloxane epoxy polymers as metal diffusion barriers to reduce electromigration  
Structures employing siloxane epoxy polymers as diffusion barriers adjacent conductive metal layers are disclosed. The siloxane epoxy polymers exhibit excellent adhesion to conductive metals, such...
7279344 Method of forming a nitride-based semiconductor  
A nitride-based semiconductor element having excellent element characteristics is obtained by forming a nitride-based semiconductor layer having excellent crystallinity without performing a long...
7268052 Method for reducing soft error rates of memory cells  
In one embodiment, a method of fabricating a transistor for a memory cell includes the steps of performing a counter doping implant before or after a source/drain implant. The counter doping...
7262488 Substrate with enhanced properties for planarization  
A method and intermediate structure for improving the thinning and planarity of a wafer back side utilizing planarization material applied to the back side prior to at least one portion of the...
7262487 Semiconductor devices and other electronic components including porous insulators created from “void” creating materials  
Semiconductor devices, other electronic components, and other articles of manufacture with porous insulator structures are disclosed. The insulative material of such porous insulators may include a...
7256139 Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices  
One embodiment of the present invention is a method for fabricating a low-k dielectric film that included steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating...
7235865 Methods for making nearly planar dielectric films in integrated circuits  
In the fabrication of integrated circuits, one specific technique for making surfaces flat is chemical-mechanical planarization. However, this technique is quite time consuming and expensive,...
7227179 Circuit materials, circuits, multi-layer circuits, and methods of manufacture thereof  
Crosslinkable liquid crystalline polymer compositions for use as dielectric materials in circuit materials, circuits, and multi-layer circuits are disclosed. The crosslinkable liquid crystalline...
7224050 Plastic materials including dendrimers or hyperbranched polymers for integrated circuit packaging  
Integrated circuit packages and their manufacture are described, wherein the packages comprise dendrimers or hyperbranched polymers. In some implementations, the dendrimers or hyperbranched...
7205640 Semiconductor device and display comprising same  
In an inverse-stagger MOSFET ( 1 ), a gate insulating layer ( 4 ) made of amorphous aluminum oxide is so formed as to face a channel layer ( 5 ) which serves as the semiconductor layer, and which...
7199420 Semiconductor device  
A memory region including a capacitor element, a logic region including a logic circuit, and a boundary region located between the memory region and the logic region are provided on a silicon...
7193322 Sacrificial shallow trench isolation oxide liner for strained-silicon channel CMOS devices  
A strained-silicon (Si) channel CMOS device shallow trench isolation (STI) oxide region, and method for forming same have been provided. The method forms a Si substrate with a relaxed-SiGe layer...
7190051 Chip level hermetic and biocompatible electronics package using SOI wafers  
The invention is directed to a hermetically packaged and implantable integrated circuit for electronics that is made by producing streets in silicon-on-insulator chips that are subsequently coated...
7190052 Semiconductor devices with oxide coatings selectively positioned over exposed features including semiconductor material  
A semiconductor device structure includes a passivation layer through which only non-silicon-comprising structures are exposed. The semiconductor device structure is formed by selectively forming...
Matches 1 - 50 out of 378 1 2 3 4 5 6 7 8 >