Matches 201 - 250 out of 491 < 1 2 3 4 5 6 7 8 9 10 >
Match Document Document Title
5525818 Reducing extrinsic base-collector capacitance  
This is a method of fabricating a heterojunction bipolar transistor on a wafer. The method can comprise: forming a doped subcollector layer 31 on a semi-conducting substrate 30; forming a doped...
5521422 Corner protected shallow trench isolation device  
A semiconductor structure to prevent gate wrap-around and corner parasitic leakage comprising a semiconductor substrate having a planar surface. A trench is located in the substrate, the trench...
5502314 Field-emission element having a cathode with a small radius  
The invention is a field-emission element that is fabricated by forming an elevated surface and a base surface on a conductive substrate or a semiconductor substrate by applying a photolithographic...
5498904 Polycrystalline semiconductive film, semiconductor device using the same and method of manufacturing the same  
A semiconductive film is formed on a substrate having a surface with indentations defining a plurality of plane regions and elevated step difference portions between adjacent plane regions. The...
5485025 Depleted extrinsic emitter of collector-up heterojunction bipolar transistor  
A collector-up bipolar transistor having an undercut region (522) beneath extrinsic regions of a base layer (510) and an emitter layer (508). The extrinsic emitter region is depleted of charge...
5453637 Read-only memory cell configuration with steep trenches  
A semiconductor integrated circuit of a read-only memory device having steep trenches is disclosed. The memory device includes a substrate that has a plurality of interwoven chessboard-like...
5446307 Microelectronic 3D bipolar magnetotransistor magnetometer  
A pyramid shaped etch is made in an n or p type silicon substrate, or any symmetric etch with slanted edges, with p or n type implants in the slanted edges of the etch to form a PN junction. On...
5438018 Method of making semiconductor device by selective epitaxial growth  
A selective growth mask having a plurality of openings is formed on a semiconductor substrate. Desired epitaxially grown regions are formed on the openings by controlling the upward epitaxial...
5432367 Semiconductor device having sidewall insulating film  
A semiconductor device having a substrate, a conductive layer formed on the substrate, an upper insulting film formed on the upper surface of the conductive layer and having a sectional shape with...
5414294 Remote indium bump corrugated PV diodes  
A radiation detector includes a photovoltaic diode mesa structure (16) having of a plurality of sub-mesa structures (16a, 16b). Each of said sub-mesa structures includes a first layer (14a) of...
5399901 Semiconductor devices having a mesa structure and method of fabrication for improved surface voltage breakdown characteristics  
A semiconductor rectifier device includes a mesa structure formed on a surface of a monocrystalline silicon wafer, the mesa having four side walls meeting at rounded corner walls. The slope of the...
5399885 Optoelectronic semiconductor device having plural mesas  
Optoelectronic semiconductor devices including a semiconductor body with a semiconductor substrate and a substantially plane semiconductor layer structure of III-V semiconductor materials situated...
5391895 Double diamond mesa vertical field effect transistor  
A double diamond mesa vertical field effect transistor includes a diamond layer, a first diamond mesa on a diamond layer, and a second diamond mesa on the first diamond mesa, opposite the diamond...
5369288 Semiconductor device for switching a ballistic flow of carriers  
In a semiconductor device, a channel layer of an undoped semiconductor material passes carriers therethrough ballistically, a carrier injection part injects the carriers into the channel layer with...
5357125 Power switching semiconductor device including SI thyristor and MOSFET connected in cascade  
A semiconductor device including a normally-on SI thyristor, and a MOSFET connected in cascade with the SI thyristor. The gate of the SI thyristor is connected to the source of the MOSFET. This...
5349211 Semiconductor infrared emitting device with oblique side surface with respect to the cleavage  
A semiconductor infrared emitting device is fabricated from an n-type gallium arsenide substrate, an n-type gallium arsenide layer on the top surface of the substrate, a p-type gallium arsenide...
5343070 Mesa type PIN diode  
A mesa-type PIN diode and method for making same are disclosed. A diode made according to the present invention includes a junction formed in the top surface of the mesa-shaped structure, having an...
5341000 Thin silicon carbide layer on an insulating layer  
A present invention is intended to provide a semiconductor device having a structure in which devices are formed in a thin layer (18) of silicon carbide having reduced crystal faults on a silicon...
5338942 Semiconductor projections having layers with different lattice constants  
A semiconductor device comprising a semiconductor crystalline substrate having projections each thereof having an area of 0.01 μm 2 to 4 μm 2 or stripe projections each thereof having a width...
5332912 Heterojunction bipolar transistor  
A heterojunction bipolar transistor comprises n + -type GaAs collector contact region, an n-type GaAs collector region, a p + -type GaAs base region, an n-type AlGaAs emitter region, and an n + ...
5324970 Interconnection structure in semiconductor device  
An interconnection structure in a semiconductor device for connecting a lower conductive layer to an upper conductive layer comprises a projection which is left by selectively etching a...
5321303 Semiconductor device having linearly arranged semiconductor chips  
A method for manufacturing a semiconductor device using inclined stage of a dicing saw in order to cut the semiconductor substrate obliquely with respect to the depthwise direction. When a...
5319240 Three dimensional integrated device and circuit structures  
A set of three-dimensional structures and devices may be wired together to perform a wide variety of circuit functions such as SRAMs, DRAMs, ROMs and PLAs. Both N-Channel and P-Channel transistors...
5313092 Semiconductor power device having walls of an inverted mesa shape to improve power handling capability  
A semiconductor device of vertical arrangement includes an anode region formed of a first semiconductor substrate and a second semiconductor substrate joined with the first semiconductor substrate....
5296733 Hetero junction bipolar transistor with improved electrode wiring contact region  
A hetero junction bipolar transistor provides a contact area an area between an emitter (or collector) electrode and a wiring formed on the electrode that is larger than that of the emitter (or...
5286997 Method for forming an isolated, low resistance epitaxial subcollector for bipolar transistors  
Generally, and in one form of the invention a method is disclosed for forming a subcollector for bipolar transistors comprising the steps of epitaxially depositing a subcollector layer 22 on a...
5285086 Semiconductor devices with low dislocation defects  
Semiconductor devices having a low density of dislocation defects can be formed of epitaxial layers grown on defective or misfit substrates by making the thickness of the epitaxial layer...
5281847 Groove structure for isolating elements comprising a GTO structure  
A semiconductor structure comprises a gate-turn-off thyristor region (GR) and a diode region (DR) with an isolation area (SR) therebetween. The isolation area is provided with a multistage groove...
5262669 Semiconductor rectifier having high breakdown voltage and high speed operation  
A semiconductor rectifier having a high breakdown voltage and a high speed operation is provided, which includes a semiconductor substrate having an N + -type semiconductor layer and an N-type...
5260588 Light-emitting diode array  
The present invention, which is directed to a light-emitting diode array for use as the light source in optical printers and other such applications, provides improved optical efficiency and a more...
5233219 Three-dimensional semiconductor device structure  
A semiconductor device and a method of manufacture thereof by which circuit elements are readily formed as a three-dimensional structure without increasing the device size are provided. An N 31 ...
5214302 Semiconductor integrated circuit device forming on a common substrate MISFETs isolated by a field oxide and bipolar transistors isolated by a groove  
A semiconductor integrated circuit device having a structure in which each of the following regions, that is, a first region for forming the base and emitter regions of each of the bipolar...
5194750 High precision ccd magnetic field sensor  
A magnetic field sensor, having a charge-coupled device formed in a semiconductor region is disclosed. The magnetic field sensor has first and second contact zones, made of a heavily doped...
5185646 Semiconductor device with improved current drivability  
On a semiconductor substrate are formed a plurality of pedestal regions which are of the same conductivity type as the semiconductor substrate. Insulating layers are formed on side surfaces of the...
5177027 Process for fabricating, on the edge of a silicon mesa, a MOSFET which has a spacer-shaped gate and a right-angled channel path  
A process for fabricating, on the more or less vertical edge of a silicon mesa, a MOS field-effect transistor which has a spacer-shaped gate and a right-angled channel path. The process involves...
5164813 New diode structure  
A new diode structure is provided by bonding two semiconductor materials together having a low capacitance, a large contact area and mechanical ruggedness. The cross-sectional area of at least one...
5144410 Ohmic contact for III-V semiconductor devices  
A dependable ohmic contact with consistently low specific contact resistance (<1×10 -6 Ω-cm 2 ) to n-type GaAs (10) is produced by a three or four step procedure. The procedure, which is...
5144413 Semiconductor structures and manufacturing methods  
A plurality of microwave semiconductor devices is provided by plating a thin heat sink layer on a surface of a wafer of semiconductor material, masking selected portions of the heat sink layer, and...
5144376 Compound semiconductor device  
A compound semiconductor device includes a semi-insulating substrate having a mesa structure defined by recess-etched portions along each side. A collector layer, base layer, emitter layer, and an...
5140388 Vertical metal-oxide semiconductor devices  
A vertical CMOS semiconductor device and a method of making the device. A polysilicon gate post rises normal to a surface of a substrate. An annular transistor encircles the gate post. The...
5136350 Semiconductor mosfet having a projecting T-shaped portion  
A MOSFET having a projecting T-shaped semiconductor portion and a method of manufaturing the same. The MOSFET includes a semiconductor body having a first diffusion region of a first conductivity...
5132769 Semiconductor device with high withstand voltage  
A semiconductor device has PN junction in architecture of PN - N + , P + NN + , PIN, or PγN. Such semiconductor device comprises a first surface layer dopped with a first type impurity at a...
5121194 Substrate output for a semiconductor device and a method of fabricating the same  
In a semiconductor device, a first diffusion region on a surface of an output region for a substrate electric potential, and an element segregation third diffusion region under a field insulating...
5119171 Semiconductor die having rounded or tapered edges and corners  
An improved semiconductor die for plastic encapsulated semiconductor device packages which impedes the inherent delamination caused by the differing expansion coefficients of the semiconductor die...
5079604 SOI layout for low resistance gate  
Silicon-on-insulator mesa steps cause high resistance in polycrystalline material because of the lack of silicide coverage. In a gate or word line, for instance, this accounts for a large...
5079616 Semiconductor structure  
Heteroepitaxial semiconductor structures of, for example, GaAs on InP or Si. The epitaxially grown GaAs is in the form of individual spaced-apart islands having maximum dimensions in the plane of...
5057896 Semiconductor device and method of producing same  
A semiconductor device comprises a semiconductor substrate having a pillar-like portion projecting upwardly from the main surface thereof and defining circumferential side walls and a top surface,...
5055894 Monolithic interleaved LED/PIN photodetector array  
Interleaved arrays of photoelectronic devices are fabricated utilizing one-step epitaxial growth of all active layers and simple planar processing. Exemplary arrays include interleaved LED...
5051372 Method of manufacturing a semiconductor optoelectric integrated circuit device, having a pin, hemt, and hbt, by selective regrowth  
There is disclosed a method of manufacturing an integrated circuit, comprising: the first step of growing a first epitaxial crystal on a compound semiconductor substrate, removing an unnecessary...
5043786 Lateral transistor and method of making same  
A method of fabricating a lateral transistor is provided, including the steps of: providing a body of semiconductor material including a device region of a first conductivity type; patterning the...
Matches 201 - 250 out of 491 < 1 2 3 4 5 6 7 8 9 10 >