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7619300 |
Super hybrid SOI CMOS devices
The present invention provides semiconductor structures comprised of stressed channels on hybrid oriented. In particular, the semiconductor structures include a first active area having a first...
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7605447 |
Highly manufacturable SRAM cells in substrates with hybrid crystal orientation
The present invention relates to a semiconductor device structure that includes at least one SRAM cell formed in a substrate. Such SRAM cell comprises two pull-up transistors, two pull-down...
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7602046 |
Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof
The invention relates to a recyclable donor wafer that includes a substrate and a formed layer thereon, wherein the formed layer has a thickness sufficient to provide (a) at least two useful layers...
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7598622 |
Encapsulation of a chip module
A chip module with a substrate having a top side, a chip mounted on the top side of the substrate, and an encapsulation includes an encapsulation material. The encapsulation is applied on the chip...
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7598594 |
Wafer-scale microcolumn array using low temperature co-fired ceramic substrate
Provided is a wafer-scale microcolumn array using a low temperature co-fired ceramic (LTCC) substrate. The microcolumn array includes a LTCC substrate having wirings and wafer-scale beam deflector...
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7598577 |
Magnetic memory device
A magnetic memory device comprises magneto-resistance elements each including a cylindrical fixed magnetization layer, an insulating film which covers an external surface of the fixed magnetization...
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7598544 |
Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube...
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7592686 |
Semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer and method of fabricating the same
In a semiconductor device, and a method of fabricating the same, the semiconductor device includes a protrusion extending from a substrate and a selective epitaxial growth (SEG) layer surrounding...
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7589379 |
Power semiconductor and method of fabrication
This invention is generally concerned with power semiconductors such as power MOS transistors, insulated gate by bipolar transistors (IGBTs), high voltage diodes and the like, and methods for their...
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7582950 |
Semiconductor chip having gettering layer, and method for manufacturing the same
In a semiconductor chip A wherein an element layer 2 having transistors and the like is formed on the front face, and the back face is joined to an underlying member, such as a package substrate,...
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7582916 |
Silicon controlled rectifier
A silicon controlled rectifier structure of polygonal layouts is provided. The polygonal first conductive type doped region is located in the middle of the polygonal second conductive type well....
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7560800 |
Die seal with reduced noise coupling
A die seal structure for sealing integrated circuit devices formed on a semiconductor substrate. The die seal structure includes a die seal and a junction diode. The die seal only connects to the...
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7554211 |
Semiconductor wafer and manufacturing process for semiconductor device
A semiconductor wafer 1 has first scribe lines 31 in two mutually perpendicular directions which have a first width and divide the semiconductor wafer 1 into a plurality of areas; second...
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7550812 |
Camera module and method of fabricating the same
Example embodiments may provide a camera module including a high-resolution lens member and/or an image sensor chip that may be integrally formed, and a method of fabricating a camera module....
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7550758 |
Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator
A method and resulting high electron mobility transistor comprised of a substrate and a relaxed silicon-germanium layer formed over the substrate. A dopant layer is formed within the relaxed...
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7550755 |
Semiconductor device with tunable energy band gap
The present invention relates to a semiconductor device in which energy band gap can be reversibly varied. An idea of the present invention is to provide a device, which is based on a...
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7545035 |
Semiconductor device having several assembled integrated-circuit chips and method of assembling and electrically connecting the integrated-circuit chips
A semiconductor device includes several assembled integrated-circuit chips. A main integrated-circuit chip has at least one cavity in which electrical contacts are provided. A secondary...
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7544984 |
Gettering using voids formed by surface transformation
One aspect of this disclosure relates to a memory device, comprising at least one gettering region, a memory array, a plurality of word lines and bit lines, and control circuitry. The gettering...
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7541644 |
Semiconductor device with effective heat-radiation
The semiconductor device has a silicon layer (SOI layer) ( 12 ) formed through a silicon oxide film ( 11 ) on a support substrate ( 10 ). A transistor (T 1 ) is formed in the SOI layer ( 12 ). The...
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7535081 |
Metal nanoline process and applications on growth of aligned nanostructure thereof
A metal nanoline process and applications on growth of aligned nanostructures thereof. A nano-structure is provided with a substrate with at least one nanodimensional metal catalyst line disposed...
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7528463 |
Semiconductor on insulator structure
An apparatus and a method for forming the apparatus include a semiconductor layer on an insulating substrate, where the substrate is a different material than the semiconductor layer, and has a...
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7525154 |
Semiconductor substrate, manufacturing method therefor, and semiconductor device
A semiconductor substrate and a manufacturing method therefore, and a semiconductor device using the semiconductor substrate comprise a strained Si region and unstrained Si region formed at...
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7521775 |
Protection of three dimensional transistor structures during gate stack etch
Embodiments of the invention include apparatuses and methods relating to three dimensional transistors having high-k dielectrics and metal gates with fins protected by a hard mask layer on their...
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7511358 |
Nonvolatile memory device having multi-bit storage and method of manufacturing the same
Provided are a nonvolatile memory device having multi bit storage and a method of manufacturing the same. The method includes forming a tunneling dielectric layer, a charge storage layer and a...
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7511353 |
Semiconductor diode and production method suitable therefor
A semiconductor diode ( 30 ) has an anode ( 32 ), a cathode ( 33 ) and a semiconductor volume ( 31 ) provided between the anode ( 32 ) and the cathode ( 33 ). An electron mobility and/or hole...
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7497959 |
Methods and structures for protecting one area while processing another area on a chip
Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased...
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7489020 |
Semiconductor wafer assemblies
An elevated containment structure in the shape of a wafer edge ring surrounding a surface of a semiconductor wafer is disclosed, as well as methods of forming and using such a structure. In one...
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7485947 |
Zener diode and method for production thereof
A zener diode circuit includes a semiconductor substrate having an N-doped region and a P-doped region that form a PN junction. The N-doped region and the P-doped region have areas with widths that...
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7482702 |
Semiconductor component sealed on five sides by polymer sealing layer
A semiconductor component includes a thinned semiconductor die having protective polymer layers on up to six surfaces. The component also includes contact bumps on the die embedded in a circuit...
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7476958 |
Semiconductor wafer having different impurity concentrations in respective regions
A semiconductor wafer has different impurity concentrations in respective regions and gate patterns have different lengths in the respective regions. The semiconductor wafer has different impurity...
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7473929 |
Semiconductor device and method for fabricating the same
Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the...
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7473616 |
Method and system for wafer bonding of structured substrates for electro-mechanical devices
A method for forming a composite substrate structure. The method includes providing a first substrate, the first substrate having a surface region and a backside region, providing a handling...
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7465991 |
Semiconductor substrates having useful and transfer layers
A semiconductor substrate that includes a relatively thin monocrystalline useful layer, an intermediate layer transferred from a source substrate, and a relatively thick layer of a support present...
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7465962 |
Semiconductor light emitting device and manufacturing method therefor
A semiconductor light emitting device in the present invention is formed by laminating an epitaxial layer 30 including an AlGaInP active layer and a second wafer 23 which transmits light...
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7462931 |
Indented structure for encapsulated devices and method of manufacture
A method for providing improved gettering in a vacuum encapsulated device is described. The method includes forming a plurality of small indentation features in a device cavity formed in a lid...
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7456489 |
Wafer with optical control modules in IC fields
In a wafer ( 1 ) with a number of exposure fields ( 2 ), each of which exposure fields comprises a number of lattice fields ( 3 ) with an IC ( 4 ) located therein, two groups ( 5, 7 ) of saw paths...
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7449765 |
Semiconductor device and method of fabrication
A MEMS (micro electro-mechanical system) semiconductor device and a method for producing such a device. A preferred embodiment of the present invention comprises the a wafer having a continuous BCS...
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7446339 |
Display device having a curved surface
The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a...
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7439578 |
Semiconductor device
A semiconductor device includes a trench formed in a surface of a semiconductor substrate. A conductor is embedded in the trench. A conductive layer is arranged adjacent to the trench on the...
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7439160 |
Methods for producing a semiconductor entity
A method for producing a semiconductor entity is described. The method includes providing a donor substrate having a zone of weakness at a predetermined depth to define a thin layer, and the donor...
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7437933 |
Micro-electro-mechanical structure having electrically insulated regions and manufacturing process thereof
Micro-electro-mechanical structure formed by a substrate of semiconductor material and a suspended mass extending above the substrate and separated therefrom by an air gap. An insulating region of...
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7436035 |
Method of fabricating a field effect transistor structure with abrupt source/drain junctions
Microelectronic structures embodying the present invention include a field effect transistor (FET) having highly conductive source/drain extensions. Formation of such highly conductive source/drain...
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7429763 |
Memory with strained semiconductor by wafer bonding with misorientation
One aspect of the present invention relates to a method for forming a strained semiconductor structure. In various embodiments, at least two strong bonding regions are defined for a desired bond...
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7425745 |
Semiconductor device and method for manufacturing the same
A semiconductor device includes a semiconductor substrate, an isolation film that is provided in one principal surface of the semiconductor substrate, wiring that is arranged on the isolation film,...
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7417297 |
Film or layer of semiconducting material, and process for producing the film or layer
SOI wafers are manufactured to have very thin device layers of high surface quality. The layer is ≦20 nm in thickness, has an HF density of ≦0.1/cm 2 , and a surface roughness of 0.2 nm RMS.
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7414291 |
Semiconductor device and method of manufacturing the same
A method includes the steps of: implanting boron into a surface region of a silicon substrate to form a p + diffused region; implanting indium into the surface of the p + diffused region, to form...
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7413965 |
Method of manufacturing a thin-film circuit substrate having penetrating structure, and protecting adhesive tape
A method of manufacturing a thin-film circuit substrate, containing: (a) gouging a surface of a circuit substrate in a depth at least approximately equal to a thickness of a final product of the...
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7411304 |
Semiconductor interconnect having conductive spring contacts
An interconnect for testing a semiconductor component includes a substrate, and interconnect contacts on the substrate configured to electrically engage component contacts on a semiconductor...
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7411273 |
Nitride semiconductor substrate
In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in...
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7405138 |
Manufacturing method of stack-type semiconductor device
A semiconductor device capable mounting semiconductor elements having different functions without increasing the area of the semiconductor device, and its manufacturing method are presented. A part...
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