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8174078 Flat-panel display semiconductor process for efficient manufacturing  
An embodiment is a method and apparatus to fabricate a flat panel display. A poly-last structure is formed for a display panel using an amorphous silicon or amorphous silicon compatible process....
8124979 Thin film transistor and method of manufacturing the same  
Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a...
8093916 Method of characterizing a semiconductor device and semiconductor device  
A method of characterizing semiconductor device includes providing a silicon-on-insulator (SOI) substrate with at least a body-tied (BT) SOI device and a BT dummy device for measurement,...
8039844 Microcrystalline silicon thin film transistor and method for manufacturing the same  
This invention provides a top-gate microcrystalline thin film transistor and a method for manufacturing the same. An inversion layer channel is formed in a top interface of a microcrystalline...
8022559 Substrate for a display panel, and a display panel having the same  
A substrate for a display panel includes an alignment accuracy measurement mark which is used for measuring alignment accuracy between patterns on the substrate without decreasing an aperture ratio...
8008789 Substrate for a display panel, and a display panel having the same  
A substrate for a display panel includes an alignment accuracy measurement mark which is used for measuring alignment accuracy between patterns on the substrate without decreasing an aperture ratio...
7968880 Thin film transistor and display device  
To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element...
7956354 Method of manufacturing an organic thin film transistor, and an organic electroluminescene display device having the organic thin film transistor  
Provided is a method of patterning an organic thin film which can prevent surface damage of an organic semiconductor layer. Also, an organic thin film transistor that can reduce an off-current and...
7947984 Liquid crystal display device and method for fabricating the same  
An LCD device is disclosed, to minimize the signal distortion by decreasing the instability of voltage in a—Si:H TFT of a gate driving signal output unit, which includes a signal controller for o...
7919777 Bottom gate thin film transistor and method of manufacturing the same  
A method of manufacturing a bottom gate thin film transistor (“TFT”) in which a polycrystalline channel region having a large grain size is formed relatively simply and easily. The method of man...
7892935 Semiconductor process  
A semiconductor process is provided. The semiconductor process includes providing a substrate. Then, a surface treatment is performed to the substrate to form a buffer layer on the substrate. Next,...
7825013 Integrated circuit comprising an amorphous region and method of manufacturing an integrated circuit  
An integrated circuit comprises a doped semiconductor portion including an amorphous portion and a contact structure comprising a conductive material. The contact structure is in contact with the...
7804089 TFT array substrate and the fabrication method thereof  
A TFT array substrate is provided. The TFT array substrate includes: a gate electrode connected to a gate line; a source electrode connected to a data line that crosses the gate line and defines a...
7750347 Semiconductor device and semiconductor display device  
A semiconductor device includes a control circuit for carrying out gamma correction of a supplied signal, and a memory for storing data used in the gamma correction. The control circuit and the...
7741641 TFT substrate and display device having the same  
A TFT substrate includes a base substrate, a gate wiring formed on the base substrate, a gate insulation layer, an activation layer, an oxidation-blocking layer, a data wiring, a protection layer...
7659213 Transistor having an embedded tensile strain layer with reduced offset to the gate electrode and a method for forming the same  
By incorporating carbon by means of ion implantation and a subsequent flash-based or laser-based anneal process, strained silicon/carbon material with tensile strain may be positioned in close...
7629207 Bottom gate thin film transistor and method of manufacturing the same  
A method of manufacturing a bottom gate thin film transistor (“TFT”) in which a polycrystalline channel region having a large grain size is formed relatively simply and easily. The method of man...
7612375 Semiconductor device and method for fabricating the same  
A semiconductor device includes at least one thin-film transistor, which includes a semiconductor layer, a gate electrode and a gate insulating film. In the semiconductor layer, a crystalline...
7547915 Semiconductor device having SiOxNy film  
In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface. Hydrogen is introduced into The active layer. A thin...
7501652 Thin film transistor structure and manufacturing method thereof  
A thin film transistor source/drain structure and the manufacturing method thereof are disclosed. The thin film transistor source/drain structure uses a sandwich structure to reduce the resistivity...
7495258 N-channel TFT and OLED display apparatus and electronic device using the same  
An N-channel TFT and OLED display apparatus and electronic device using the same are disclosed. The N-channel TFT comprises a a substrate; an active layer on the substrate, wherein the active layer...
7449717 Asymmetry thin-film transistor  
An asymmetry thin-film transistor includes a substrate, a semiconductor layer positioned on the substrate, and a gate positioned on the substrate. The semiconductor layer has a channel region, a...
7348598 Thin film transistor and liquid crystal display device using the same  
A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance...
7268366 Method of fabricating X-ray detecting device  
A method of fabricating an X-ray detecting device that is capable of preventing breakage of a transparent electrode. In the method, patterning of first and second insulating films occurs at...
7247603 Charge dissipative dielectric for cryogenic devices  
A Superconducting Quantum Interference Device (SQUID) is disclosed comprising a pair of resistively shunted Josephson junctions connected in parallel within a superconducting loop and biased by an...
7238963 Self-aligned LDD thin-film transistor and method of fabricating the same  
A self-aligned LDD TFT and a fabrication method thereof. A substrate is provided, on which a semiconductor layer is formed. A first masking layer is provided over a first region of the portion of...
7235416 Method for fabricating polysilicon liquid crystal display device  
A method for fabricating a polysilicon liquid crystal display device includes: forming a first amorphous silicon layer on a substrate; forming a photoresist pattern on the first amorphous silicon...
7230256 Ion doping system, ion doping method and semiconductor device  
An ion doping system includes a chamber 11, an exhausting section 13 for exhausting gases from the chamber, an ion source 12 provided for the chamber, and an accelerating section 23 for extracting...
7202499 Semiconductor device including two transistors and capacitive part  
An object of the present invention is to provide a TFT of new structure in which the gate electrode overlaps with the LDD region and a TFT of such structure in which the gate electrode does not...
7148510 Electronic apparatus having a protective circuit  
A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long,...
7148507 Semiconductor device having thin film transistor with position controlled channel formation region  
A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain...
7034336 Capacitorless 1-transistor DRAM cell and fabrication method  
The channel region (11) and the source-drain regions (9, 10) are arranged vertically at a sidewall of a dielectric trench filling (4). On the opposite side, the semiconductor material is bounded by...
7009205 Image display device using transistors each having a polycrystalline semiconductor layer  
An image display device using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and a manufacturing method thereof. The...
6984848 Thin film transistor with buffer layer for promoting electron mobility  
A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the...
6900466 Semiconductor component for generating polychromatic electromagnetic radiation  
A semiconductor component for generating a polychromatic electromagnetic radiation has a semiconductor chip with a first semiconductor layer and a second semiconductor layer, which is provided...
6897482 Transistor and display comprising it  
A transistor has a source electrode and a drain electrode formed with a predetermined interval secured in between on a semiconductor layer formed to perspectively overlap a gate electrode. The...
6841797 Semiconductor device formed over a surface with a drepession portion and a projection portion  
A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain...
6838698 Semiconductor device having source/channel or drain/channel boundary regions  
A semiconductor device and a method for forming the same are disclosed. The semiconductor device comprising an insulated gate field effect transistor provided with a region having added thereto an...
6828585 Thin-film transistor, method for fabricating the same, and liquid crystal display device  
A thin-film transistor includes: a pair of n-type heavily doped regions that are horizontally spaced apart from each other; p-type channel regions that are located between the n-type heavily doped...
6794682 Semiconductor device, method for manufacturing the same, and radiation detector  
In a semiconductor device including bottom-gate-type thin-film transistors, each of which includes a gate electrode provided on an insulating surface of a substrate, a semiconductor layer provided...
6750936 Display device  
A display device of the present invention includes: a plurality of pixel electrodes defining a plurality of pixels that are arranged in a matrix pattern; optical switching elements electrically...
6737676 Gate insulated field effect transistor and method of manufacturing the same  
A thin film field effect transistors and manufacturing method for the same are described. The channel region of the transistor is spoiled by an impurity such as oxygen, carbon, nitrogen. The...
6737717 Thin-film transistor having lightly-doped drain structure  
There is provided a semiconductor device including a semiconductor circuit formed by semiconductor elements having an LDD structure which has high reproducibility, improves the stability of TFTs...
6720575 Semiconductor device with a semiconductor layer over a surface having a recess pitch no smaller than 0.3 microns  
An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the substrate...
6653177 Patterning method, thin film transistor matrix substrate manufacturing method, and exposure mask  
There is provided a patterning method which makes it possible to form a desired preferable pattern having no reduction in the pattern thickness in a boundary portion where a group of patterns are...
6581899 Valve for use in microfluidic structures  
A valve for use in microfluidic structures. The valve uses a spherical member, such as a ball bearing, to depress an elastomeric member to selectively open and close a microfluidic channel. The...
6563136 Thin-film semiconductor device having a thin-film transistor for circuits that differs from a thin-film transistor for pixels  
A thin-film semiconductor device which has a pixel array section and a peripheral circuit section arranged around it, said pixel array section containing pixel electrodes and thin-film transistors...
6515299 Semiconductor device with rod like crystals and a recessed insulation layer  
An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the substrate...
6504175 Hybrid polycrystalline and amorphous silicon structures on a shared substrate  
Amorphous and polycrystalline silicon (hybrid) devices are formed close to one another employing laser crystallization and back side lithography processes. A mask (e.g., TiW) is used to protect the...
6504170 Field effect transistors, field emission apparatuses, and a thin film transistor  
The present invention includes field effect transistors, field emission apparatuses, thin film transistors, and methods of forming field effect transistors. According to one embodiment, a field...
Matches 1 - 50 out of 122 1 2 3 >