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8174078 |
Flat-panel display semiconductor process for efficient manufacturing
An embodiment is a method and apparatus to fabricate a flat panel display. A poly-last structure is formed for a display panel using an amorphous silicon or amorphous silicon compatible process....
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8124979 |
Thin film transistor and method of manufacturing the same
Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a...
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8093916 |
Method of characterizing a semiconductor device and semiconductor device
A method of characterizing semiconductor device includes providing a silicon-on-insulator (SOI) substrate with at least a body-tied (BT) SOI device and a BT dummy device for measurement,...
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8039844 |
Microcrystalline silicon thin film transistor and method for manufacturing the same
This invention provides a top-gate microcrystalline thin film transistor and a method for manufacturing the same. An inversion layer channel is formed in a top interface of a microcrystalline...
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8022559 |
Substrate for a display panel, and a display panel having the same
A substrate for a display panel includes an alignment accuracy measurement mark which is used for measuring alignment accuracy between patterns on the substrate without decreasing an aperture ratio...
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8008789 |
Substrate for a display panel, and a display panel having the same
A substrate for a display panel includes an alignment accuracy measurement mark which is used for measuring alignment accuracy between patterns on the substrate without decreasing an aperture ratio...
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7968880 |
Thin film transistor and display device
To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element...
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7956354 |
Method of manufacturing an organic thin film transistor, and an organic electroluminescene display device having the organic thin film transistor
Provided is a method of patterning an organic thin film which can prevent surface damage of an organic semiconductor layer. Also, an organic thin film transistor that can reduce an off-current and...
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7947984 |
Liquid crystal display device and method for fabricating the same
An LCD device is disclosed, to minimize the signal distortion by decreasing the instability of voltage in a—Si:H TFT of a gate driving signal output unit, which includes a signal controller for o...
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7919777 |
Bottom gate thin film transistor and method of manufacturing the same
A method of manufacturing a bottom gate thin film transistor (“TFT”) in which a polycrystalline channel region having a large grain size is formed relatively simply and easily. The method of man...
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7892935 |
Semiconductor process
A semiconductor process is provided. The semiconductor process includes providing a substrate. Then, a surface treatment is performed to the substrate to form a buffer layer on the substrate. Next,...
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7825013 |
Integrated circuit comprising an amorphous region and method of manufacturing an integrated circuit
An integrated circuit comprises a doped semiconductor portion including an amorphous portion and a contact structure comprising a conductive material. The contact structure is in contact with the...
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7804089 |
TFT array substrate and the fabrication method thereof
A TFT array substrate is provided. The TFT array substrate includes: a gate electrode connected to a gate line; a source electrode connected to a data line that crosses the gate line and defines a...
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7750347 |
Semiconductor device and semiconductor display device
A semiconductor device includes a control circuit for carrying out gamma correction of a supplied signal, and a memory for storing data used in the gamma correction. The control circuit and the...
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7741641 |
TFT substrate and display device having the same
A TFT substrate includes a base substrate, a gate wiring formed on the base substrate, a gate insulation layer, an activation layer, an oxidation-blocking layer, a data wiring, a protection layer...
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7659213 |
Transistor having an embedded tensile strain layer with reduced offset to the gate electrode and a method for forming the same
By incorporating carbon by means of ion implantation and a subsequent flash-based or laser-based anneal process, strained silicon/carbon material with tensile strain may be positioned in close...
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7629207 |
Bottom gate thin film transistor and method of manufacturing the same
A method of manufacturing a bottom gate thin film transistor (“TFT”) in which a polycrystalline channel region having a large grain size is formed relatively simply and easily. The method of man...
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7612375 |
Semiconductor device and method for fabricating the same
A semiconductor device includes at least one thin-film transistor, which includes a semiconductor layer, a gate electrode and a gate insulating film. In the semiconductor layer, a crystalline...
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7547915 |
Semiconductor device having SiOxNy film
In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface. Hydrogen is introduced into The active layer. A thin...
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7501652 |
Thin film transistor structure and manufacturing method thereof
A thin film transistor source/drain structure and the manufacturing method thereof are disclosed. The thin film transistor source/drain structure uses a sandwich structure to reduce the resistivity...
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7495258 |
N-channel TFT and OLED display apparatus and electronic device using the same
An N-channel TFT and OLED display apparatus and electronic device using the same are disclosed. The N-channel TFT comprises a a substrate; an active layer on the substrate, wherein the active layer...
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7449717 |
Asymmetry thin-film transistor
An asymmetry thin-film transistor includes a substrate, a semiconductor layer positioned on the substrate, and a gate positioned on the substrate. The semiconductor layer has a channel region, a...
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7348598 |
Thin film transistor and liquid crystal display device using the same
A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance...
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7268366 |
Method of fabricating X-ray detecting device
A method of fabricating an X-ray detecting device that is capable of preventing breakage of a transparent electrode. In the method, patterning of first and second insulating films occurs at...
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7247603 |
Charge dissipative dielectric for cryogenic devices
A Superconducting Quantum Interference Device (SQUID) is disclosed comprising a pair of resistively shunted Josephson junctions connected in parallel within a superconducting loop and biased by an...
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7238963 |
Self-aligned LDD thin-film transistor and method of fabricating the same
A self-aligned LDD TFT and a fabrication method thereof. A substrate is provided, on which a semiconductor layer is formed. A first masking layer is provided over a first region of the portion of...
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7235416 |
Method for fabricating polysilicon liquid crystal display device
A method for fabricating a polysilicon liquid crystal display device includes: forming a first amorphous silicon layer on a substrate; forming a photoresist pattern on the first amorphous silicon...
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7230256 |
Ion doping system, ion doping method and semiconductor device
An ion doping system includes a chamber 11, an exhausting section 13 for exhausting gases from the chamber, an ion source 12 provided for the chamber, and an accelerating section 23 for extracting...
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7202499 |
Semiconductor device including two transistors and capacitive part
An object of the present invention is to provide a TFT of new structure in which the gate electrode overlaps with the LDD region and a TFT of such structure in which the gate electrode does not...
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7148510 |
Electronic apparatus having a protective circuit
A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long,...
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7148507 |
Semiconductor device having thin film transistor with position controlled channel formation region
A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain...
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7034336 |
Capacitorless 1-transistor DRAM cell and fabrication method
The channel region (11) and the source-drain regions (9, 10) are arranged vertically at a sidewall of a dielectric trench filling (4). On the opposite side, the semiconductor material is bounded by...
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7009205 |
Image display device using transistors each having a polycrystalline semiconductor layer
An image display device using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and a manufacturing method thereof. The...
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6984848 |
Thin film transistor with buffer layer for promoting electron mobility
A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the...
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6900466 |
Semiconductor component for generating polychromatic electromagnetic radiation
A semiconductor component for generating a polychromatic electromagnetic radiation has a semiconductor chip with a first semiconductor layer and a second semiconductor layer, which is provided...
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6897482 |
Transistor and display comprising it
A transistor has a source electrode and a drain electrode formed with a predetermined interval secured in between on a semiconductor layer formed to perspectively overlap a gate electrode. The...
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6841797 |
Semiconductor device formed over a surface with a drepession portion and a projection portion
A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain...
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6838698 |
Semiconductor device having source/channel or drain/channel boundary regions
A semiconductor device and a method for forming the same are disclosed. The semiconductor device comprising an insulated gate field effect transistor provided with a region having added thereto an...
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6828585 |
Thin-film transistor, method for fabricating the same, and liquid crystal display device
A thin-film transistor includes: a pair of n-type heavily doped regions that are horizontally spaced apart from each other; p-type channel regions that are located between the n-type heavily doped...
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6794682 |
Semiconductor device, method for manufacturing the same, and radiation detector
In a semiconductor device including bottom-gate-type thin-film transistors, each of which includes a gate electrode provided on an insulating surface of a substrate, a semiconductor layer provided...
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6750936 |
Display device
A display device of the present invention includes: a plurality of pixel electrodes defining a plurality of pixels that are arranged in a matrix pattern; optical switching elements electrically...
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6737676 |
Gate insulated field effect transistor and method of manufacturing the same
A thin film field effect transistors and manufacturing method for the same are described. The channel region of the transistor is spoiled by an impurity such as oxygen, carbon, nitrogen. The...
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6737717 |
Thin-film transistor having lightly-doped drain structure
There is provided a semiconductor device including a semiconductor circuit formed by semiconductor elements having an LDD structure which has high reproducibility, improves the stability of TFTs...
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6720575 |
Semiconductor device with a semiconductor layer over a surface having a recess pitch no smaller than 0.3 microns
An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the substrate...
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6653177 |
Patterning method, thin film transistor matrix substrate manufacturing method, and exposure mask
There is provided a patterning method which makes it possible to form a desired preferable pattern having no reduction in the pattern thickness in a boundary portion where a group of patterns are...
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6581899 |
Valve for use in microfluidic structures
A valve for use in microfluidic structures. The valve uses a spherical member, such as a ball bearing, to depress an elastomeric member to selectively open and close a microfluidic channel. The...
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6563136 |
Thin-film semiconductor device having a thin-film transistor for circuits that differs from a thin-film transistor for pixels
A thin-film semiconductor device which has a pixel array section and a peripheral circuit section arranged around it, said pixel array section containing pixel electrodes and thin-film transistors...
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6515299 |
Semiconductor device with rod like crystals and a recessed insulation layer
An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the substrate...
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6504175 |
Hybrid polycrystalline and amorphous silicon structures on a shared substrate
Amorphous and polycrystalline silicon (hybrid) devices are formed close to one another employing laser crystallization and back side lithography processes. A mask (e.g., TiW) is used to protect the...
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6504170 |
Field effect transistors, field emission apparatuses, and a thin film transistor
The present invention includes field effect transistors, field emission apparatuses, thin film transistors, and methods of forming field effect transistors. According to one embodiment, a field...
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