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7538367 |
Avalanche photodiode
The present invention provides an avalanche photodiode capable of raising productivity. An n-type InP buffer layer, an n-type GaInAs light absorption layer, an n-type GaInAsP transition layer, an...
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7511357 |
Trenched MOSFETs with improved gate-drain (GD) clamp diodes
A MOSFET device that includes a first Zener diode connected between a gate metal and a drain metal of said semiconductor power device for functioning as a gate-drain (GD) clamp diode. The GD clamp...
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6936868 |
Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same
A sequential mesa type avalanche photodiode (APD) includes a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of...
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6909163 |
High-frequency oscillator for an integrated semiconductor circuit and the use thereof
A high frequency oscillator for an integrated semiconductor circuit is a component of the semiconductor circuit, which is comprised of a first silicon layer, an adjoining silicon dioxide layer...
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6855587 |
Gate-controlled, negative resistance diode device using band-to-band tunneling
A new gate-controlled, negative resistance diode device is achieved. The device comprises, first, a semiconductor layer in a substrate. The semiconductor layer contains an emitter region and a...
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6774460 |
IMPATT diodes
The present invention relates to an impact ionisation avalanche transit time (IMPATT) diode device comprising an avalanche region and a drift region, wherein at least one narrow bandgap region,...
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6762494 |
Electronic package substrate with an upper dielectric layer covering high speed signal traces
An electronic package component includes a flip-chip device mounted to a BGA substrate. The BGA substrate includes conductive traces formed on its upper surface and configured in a coplanar...
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6759744 |
Electronic circuit unit suitable for miniaturization
The electronic circuit unit of the present invention includes first and second insulating substrates on respective surfaces of which wiring patterns are formed, and thick-film passive elements...
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6734515 |
Semiconductor light receiving element
A semiconductor light receiving element having a light receiving layer ( 1 ) formed from a GaN group semiconductor, and an electrode ( 2 ) formed on one surface of the light receiving layer as a...
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6686647 |
Gunn diode and method of manufacturing the same
Indium phosphor (InP) Gunn diode that realizes improvements in thermal characteristics, yield factor of good products and easy assembly to planar circuits is provided. In a Gunn diode of the...
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6653668 |
Radio frequency modules and modules for moving target detection
It is an object of the present invention to provide a radio frequency module incorporating an MMIC that has a high S/N ratio while ensuring a high output. A radio frequency module according to the...
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6552413 |
Diode
Implemented is a diode which controls an energy loss produced during a reverse recovery operation and generates an oscillation of an applied voltage with difficulty even if a reverse bias voltage...
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6531744 |
Integrated circuit provided with overvoltage protection and method for manufacture thereof
The invention concerns an integrated circuit, including a substrate (SBSTR) with sub-circuits provided with a number of terminals, including a substrate terminal or earthing point (GND), a V cc ...
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6495863 |
Semiconductor device having diode for input protection circuit of MOS structure device
An insulator film provided on a region for arranging a Zener diode has a plurality of groove portions successively arranged in a direction D 1 of extension of each semiconductor region forming the...
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6380623 |
Microcircuit assembly having dual-path grounding and negative self-bias
A microwave-frequency microcircuit assembly includes an integrated circuit structure having a circuit ground. A support structure includes a grounded metallic carrier, and a dielectric substrate...
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6366770 |
High-frequency semiconductor device and radio transmitter/receiver device
A high-frequency semiconductor device includes a microwave monolithic integrated circuit having first and second passive element sections each having at least one passive element as well as an FET....
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6252250 |
High power impatt diode
In a high power IMPATT ( Impact Avalanche Transit Time) diode for generating high frequency signals two electrodes, anode (2) and cathode (1), are arranged with a semiconductor layer therebetween....
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6040617 |
Structure to provide junction breakdown stability for deep trench devices
The present invention is directed to an improved deep trench structure, for use in junction devices, which addresses junction breakdown voltage instabilities of the prior art. The primary, or...
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6023080 |
Input/output connection structure of a semiconductor device
A semiconductor device comprises a dielectric substrate formed on a metal carrier, a semiconductor chip formed on the dielectric substrate and having a first electrode, a microstrip line formed on...
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5986331 |
Microwave monolithic integrated circuit with coplaner waveguide having silicon-on-insulator composite substrate
A microwave monolithic integrated circuit includes a coplanar waveguide (CPW) formed by a composite silicon structure constituted by a relatively high resistivity substrate, a first oxide layer on...
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5977611 |
Power diode and hybrid diode, voltage limiter and freewheeling diode having the power diode
A Read diode includes an inner zone, a cathode zone, an anode zone and a first coupling zone disposed between the inner zone and the anode zone. A second coupling zone is disposed between the first...
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5917227 |
Light-emitting-diode array and light-emitting-diode element
A light-emitting-diode array includes a non-doped compound semiconductor layer between a substrate and a first compound semiconductor layer. A plurality of isolation regions extend from the first...
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5512776 |
Interdigitated IMPATT devices
A monolithic circuit including an IMPATT with the IMPATT formed as a plurality of parallel vertical fingers or an array of vertical mesas having a common doped region to apread the area for heat...
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5466965 |
High efficiency, high power multiquantum well IMPATT device with optical injection locking
Multiple quantum wells within an impact avalanche transit time device (IMPATT) utilizing a plurality of gallium arsenide/aluminum gallium arsenide heterojunctions are used to provide a high power,...
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5449953 |
Monolithic microwave integrated circuit on high resistivity silicon
A silicon-based monolithic microwave integrated circuit architecture is described. This architecture, called MICROX™, is a combination of silicon material growth and wafer processing...
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5436499 |
High performance gaas devices and method
High performance GaAs and AlGaAs-based devices and a process enabling the manufacture of new III-V compound technologies are disclosed. The GaAs devices are particularly useful as VLSICs by...
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5373186 |
Bipolar transistor with monoatomic base layer between emitter and collector layers
A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A preferred device is a...
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5329150 |
Semiconductor photodetector devices with pairs of monoatomic layers separated by intrinsic layers
A semiconductor light wave detector which has a first layer of a highly doped n-type semiconducting substrate, a second layer of a highly doped n-type semiconducting material, a third layer of a...
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5276350 |
Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits
A zener diode with a low reverse breakdown avalanche voltage and the use of zener diode in electrostatic discharge protection circuit is described herein. The low breakdown avalanche voltage is...
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5243199 |
High frequency device
Improvement of a high frequency device having metal layers, active semiconductor layers and other semiconductor layers which make use of carrier avalanche or carrier injection induced by a reverse...
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5216260 |
Optically bistable semiconductor device with pairs of monoatomic layers separated by intrinsic layers
An optically bistable semiconductor device which has a doped or undoped gallium arsenide substrate and a series of alternating n-type and p-type Dirac-delta doped monoatomic layers formed on the...
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5060234 |
Injection laser with at least one pair of monoatomic layers of doping atoms
A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A particularly preferred...
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4954864 |
Millimeter-wave monolithic diode-grid frequency multiplier
A semiconductor diode structure useful for harmonic generation of millimeter or submillimeter wave radiation from a fundamental input wave is fabricated on a GaAs substrate. A heavily doped layer...
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4882609 |
Semiconductor devices with at least one monoatomic layer of doping atoms
A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A particularly preferred...
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4872039 |
Buried lateral diode and method for making same
A diode in a semiconductor body has two laterally adjacent regions. Each region has buried portions. The first and second regions are doped with opposite conductivity type dopants. A buried P-N...
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4866488 |
Ballistic transport filter and device
An energy filter for carriers in semiconductor devices and devices with such filters are disclosed. The filter is a superlattice and the filtering action arises from the subbands and gaps in the...
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4857972 |
Impatt diode
An IMPATT diode having Si-SiGe heterostructure grown on a Si substrate with the SiGe layer being disposed in the generation zone of the IMPATT diode. The SiGe layer may be replaced by a Si/SiGe...
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4835495 |
Diode device packaging arrangement
An arrangement for packaging an active millimeter wave device is provided having an active solid state diode mounted on a cylindrical shaped heat sink pedestal. The cap for the diode is an...
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4706041 |
Periodic negative resistance microwave structures and amplifier and oscillator embodiments thereof
Structures (30) with IMPATT type diodes (34) located periodically along a transmission line (38-32) to simulate a distributed diode are disclosed. Preferred embodiments include incorporation of the...
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4673958 |
Monolithic microwave diodes
Two-terminal active devices, such as IMPATT and Gunn diodes, are combined with passive devices in a monolithic form using a plated metal heat sink to support the active elements and a coated-on...
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4661834 |
Semiconductor structures and manufacturing methods
A plurality of microwave semiconductor devices is provided by plating a thin conductive layer on a surface of a wafer of semiconductor material, masking selected portions of the thin conductive...
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4617532 |
Optically stabilized semiconductor microwave diodes
A semiconductor device is optically phase-locked by utilizing (1) the Burstein shift in differently doped semiconductor layers and injecting light having an energy level lower than the absorption...
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4596069 |
Three dimensional processing for monolithic IMPATTs
The disclosure relates to a monolithic circuit and method of making same which includes the use of two substrates of different semiconductor materials or two substrates of the same semiconductor...
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4568889 |
Distributed diode VCO with stripline coupled output and distributed variable capacitor control
In a distributed IMPATT structure, power is coupled out through a side contact. That is, in previously proposed distributed IMPATT structures, the gain medium (the active region of the IMPATT)...
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4525732 |
Distributed IMPATT structure
In a distributed IMPATT structure, power is coupled out through a side contact. That is, in previously proposed distributed IMPATT structures the gain medium (the active region of the IMPATT)...
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4291320 |
Heterojunction IMPATT diode
A double drift IMPATT diode is formed from two semiconductors having different band gaps and carrier mobilities. The avalanche portion of the diode is created in the semiconductor having the lower...
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4286276 |
Dual Schottky contact avalanche semiconductor structure with electrode spacing equal to EPI layer thickness
A semiconductor structure comprising two conventional electrodes of an avalanche diode and furthermore a supplementary electrode. In a preferred embodiment the conventional and supplementary...
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4231058 |
Tungsten-titanium-chromium/gold semiconductor metallization
Improved TRAPATT diodes in which the improvement comprises a high-temperae metallization on silicon from which the diodes are formed. Metallization is applied to a silicon wafer by sputtering a...
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4230505 |
Method of making an impatt diode utilizing a combination of epitaxial deposition, ion implantation and substrate removal
A method of making an Impatt diode capable of operating at millimeter wave frequencies in which an epitaxial layer of the thickness desired for the diode is deposited on a substrate. Conductivity...
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4228453 |
(III) Plane gallium arsenide IMPATT diode
In an avalanche diode of gallium arsenide, e.g. an IMPATT diode, the optimization of the coefficient of ionization by impact in the case of impacts initiated by holes when the electrical field...
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