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8114783 |
Silicon carbide semiconductor element, method of manufacturing the same, and silicon carbide device
A silicon carbide semiconductor element and a manufacturing method thereof are disclosed in which a low contact resistance is attained between an electrode film and a wiring conductor element, and...
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8022507 |
Varactor diodes
An improved varactor diode is obtained by providing a substrate having a first surface and in which are formed a first N region having a first peak dopant concentration located at a first depth...
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7952131 |
Lateral junction varactor with large tuning range
Large tuning range junction varactor includes first and second junction capacitors coupled in parallel between first and second varactor terminals. First and second plates of the capacitors are...
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7923818 |
Varactor element and low distortion varactor circuit arrangement
A varactor element having a junction region, in which the depletion capacitance of the varactor element varies when a reverse bias voltage is applied to the varactor element. The varactor element...
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7821103 |
Counter-doped varactor structure and method
An improved varactor diode (40) is obtained by providing a substrate (41) having a first surface (43), in which are formed a P+ region (53, 46) proximate the first surface (43), a first N region...
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7696604 |
Silicon germanium heterostructure barrier varactor
Methods and heterostructure barrier varactor (HBV) diodes optimized for application with frequency multipliers at providing outputs at submillimeter wave frequencies and above. The HBV diodes...
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7023038 |
Silicon barrier capacitor device structure
The present invention disclosed a silicon barrier capacitor device structure. By applying CVD or PVD technologies to deposit poly-silicon layers as the dielectric of capacitor on the doping region...
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6882029 |
Junction varactor with high Q factor and wide tuning range
A PN-junction varactor includes a first ion well of first conductivity type formed on a semiconductor substrate of second conductivity type. A first dummy gate is formed over the first ion well. A...
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6787882 |
Semiconductor varactor diode with doped heterojunction
A semiconductor device includes a plurality of barrier layers and a plurality of quantum well layers which are alternately interleaved with each other and disposed on a substrate of semiconductor...
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5789801 |
Varactor with electrostatic barrier
A varactor comprising a substrate of semiconductor material on which is grown both an electrostatic barrier having a first layer of material doped with donor impurities and a second layer of...
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5629544 |
Semiconductor diode with silicide films and trench isolation
The invention comprises a diode in a well having trench isolation that has an edge. Both the well contact of the diode and the rectifying contact of the diode are silicided, but the silicide on the...
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5338966 |
Variable capacitance diode device
There is provided a variable capacitance diode device. The device comprises a semiconductor substrate of a first conductive type, an epitaxial layer of the first conductive type with a high...
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4475117 |
Linear pn junction capacitance diode
A capacitance diode has a substrate of a first conductivity type, an epitaxial layer of the first conductivity type present thereon, a first zone of the first conductivity type diffused therein and...
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4438445 |
Variable capacitance diode and method of making the same
A variable capacitance diode comprises a low resistance semi-conductor substrate on which is epitaxially deposited three layers, a first layer adjacent the substrate having an impurity...
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4250514 |
Capacitance diode with particular doping profile
A capacitance diode includes an epitaxial layer of a first conductivity type provided on a substrate in which a doping profile is formed in the epitaxial layer by controlled doping during the...
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4226648 |
Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy
A semiconductor varactor diode of the hyperabrupt junction type, typically having a PNN+ configuration, is disclosed. The impurity concentration in the intermediate N-type portion is grown in by...
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4106953 |
Method of producing an ion implanted tuning diode
Semiconductor devices with special reference to the process for fabricating tuning diodes. This invention includes the super-position of a multiplicity of ion implants and thermal redistribution...
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3840306 |
SEMICONDUCTOR CAPACITANCE DIODE HAVING ROUNDED OFF DOPING IMPURITY PROFILE
Semiconductor device including semiconductor capacitance diode, comprising a low resistivity substrate and a higher resistivity first layer, both of first conductivity type; a diffused surface...
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3748499 |
VOLTAGE VARIABLE NON-INDUCTION PHASE SHIFTER WITH MONOLITHIC IMPLEMENTATION
A voltage variable RC phase shifter incorporating reverse bias P-N juncti functioning as voltage variable capacitors in conjunction with resistance elements to produce a phase shift variation up to...
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3719861 |
P-N JUNCTION DEVICE AND A METHOD OF MAKING THE SAME
A P-N junction device has a base of one type of semiconductive material and a thin layer of another type of semiconductive material thereon. Each semiconductive material has a semiconductivity type...
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3679948 |
VARIABLE CAPACITANCE DIODE
A semiconductor diode for use as voltage dependent capacitance with p+n+n or n+p+p structure. The concentration of the dopant that determines the conductance type of the middle n+ or p+ region...
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3638301 |
METHOD FOR MANUFACTURING A VARIABLE CAPACITANCE DIODE
A variable capacitance diode having an improved stepped junction therein formed by epitaxially depositing a P- type layer on a N+ silicon substrate, forming an N+ type layer on the P- type layer,...
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3634738 |
DIODE HAVING A VOLTAGE VARIABLE CAPACITANCE CHARACTERISTIC AND METHOD OF MAKING SAME
In the method of the present invention, a lightly doped layer of semiconductive material is epitaxially grown on a relatively highly doped substrate so as to provide a relatively sharply defined...
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3611058 |
VARACTOR DIODE
This disclosure relates to a planar-type junction varactor, and a method for making same, having improved voltage breakdown and leakage current characteristics which can be used as a tuning element...
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3493443 |
HYPERABRUPTP-N JUNCTIONS IN SEMICONDUCTORS BY SUCCESSIVE DOUBLE DIFFUSION OF IMPURITIES
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3741826 |
METHOD OF MANUFACTURING VARIABLE CAPACITANCE DIODES
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3764415 |
METHOD OF MANUFACTURING A SEMICONDUCTOR CAPACITANCE DIODE
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3483443 |
DIODE HAVING LARGE CAPACITANCE CHANGE RELATED TO MINIMAL APPLIED VOLTAGE
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3434893 |
SEMICONDUCTOR DEVICE WITH A LATERAL RETROGRADED PN JUNCTION
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3233196 |
Integrated resistance-capacitance semiconductor frequency selective filter
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3201664 |
Semiconductor diode having multiple regions of different conductivities
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3190773 |
Vapor deposition process to form a retrograde impurity distribution p-n junction formation wherein the vapor contains both donor and acceptor impurities
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3149395 |
Method of making a varactor diode by epitaxial growth and diffusion
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3094671 |
Field effect parametric amplifier
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2991371 |
Variable capacitor
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