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7619273 |
Varactor
A varactor comprising a first layer separated from a second layer by an insulating layer, wherein the first layer is a first type of semiconductor material and the second layer is a second type of...
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7612424 |
Nanoelectromechanical bistable cantilever device
Nano-electromechanical device having an electrically conductive nano-cantilever wherein the nano-cantilever has a free end that is movable relative to an electrically conductive substrate such as...
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7579644 |
Adjustable on-chip sub-capacitor design
One or more on-chip VNCAP or MIMCAP capacitors utilize a variable MOS capacitor to improve the uniform capacitance value of the capacitors. This permits the production of silicon semiconductor...
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7579642 |
Gate-enhanced junction varactor
A semiconductor junction varactor utilizes gate enhancement for enabling the varactor to achieve a high ratio of maximum capacitance to minimum capacitance.
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7569912 |
Differential variable capacitors and their applications
An integrated circuit design for differential variable capacitors uses an integration method to integrate an integrated circuit having differential variable capacitors as a whole, and takes the...
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7560798 |
High performance tapered varactor
Disclosed is a semiconductor structure, which includes a non-planar varactor having a geometrically designed depletion zone with a taper, as to provide improved Cmax/Cmin with low series...
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7525177 |
Controllable varactor within dummy substrate pattern
A dummy region varactor for improving a CMP process and improving electrical isolation from active areas and a method for forming the same, the varactor including a semiconductor substrate having a...
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7518850 |
High yield, high density on-chip capacitor design
A capacitance circuit assembly mounted on a semiconductor chip, and methods for forming the same, are provided. A plurality of divergent capacitors is provided in a parallel circuit connection...
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7518215 |
One mask hyperabrupt junction varactor using a compensated cathode contact
A semiconductor structure comprising a hyperabrupt junction varactor with a compensated cathode contact as well as a method of fabricating the same are disclosed. The method includes a single...
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7489004 |
Micro-electro-mechanical variable capacitor for radio frequency applications with reduced influence of a surface roughness
A micro-electro-mechanical variable capacitor has a first and a second electrode, and a dielectric region arranged on the first electrode. An intermediate electrode is arranged on the dielectric...
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7388276 |
Metal-insulator varactor devices
A varactor is configured with first and second conducting layers, spaced apart from one another such that a given voltage can be applied across the first and second conducting layers. Further, an...
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7388275 |
Electronic package with integrated capacitor
Generally provided is a circuit assembly construction for controlling impedance in an electronic package. A large scale, parallel-plate capacitor includes two electrodes separated by a dielectric...
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7388247 |
High precision microelectromechanical capacitor with programmable voltage source
A high precision microelectromechanical capacitor with programmable voltage source includes a monolithic MEMS device having a capacitance actuator, a trim capacitor, and a high precision,...
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7345354 |
Increased quality factor of a varactor in an integrated circuit via a high conductive region in a well
The present invention provides an varactor, a method of manufacture thereof. In an exemplary embodiment, the varactor includes a semiconductor substrate and well of a first and second conductivity...
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7335956 |
Capacitor device with vertically arranged capacitor regions of various kinds
A capacitor device selectively combines MOM, MIM and varactor regions in the same layout area of an IC. Two or more types of capacitor regions arranged vertically on a substrate to form the...
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7301213 |
Acoustic sensor
A sound hole is provided in a silicon substrate. A diaphragm electrode is secured to the upper surface of the silicon substrate via at least one fixed end so as to cover the sound hole of the...
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7294895 |
Capacitive dynamic quantity sensor and semiconductor device
A capacitive dynamic quantity sensor whose size is small and whose reliability and mass productivity are high is provided. In order to realize signal transmission from a lower electrode to an upper...
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7235862 |
Gate-enhanced junction varactor
A semiconductor junction varactor utilizes gate enhancement for enabling the varactor to achieve a high ratio of maximum capacitance to minimum capacitance.
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7223667 |
Compensated linearity voltage-control-capacitor device by standard CMOS process
Apparatus and method of providing a CMOS varactor device having improved linearity. At least two differential varactor elements are connected in parallel. Each of the differential elements includes...
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7202567 |
Semiconductor device and manufacturing method for the same
A lower interconnection is provided on a semiconductor substrate. A MIM capacitive element is provided on a first interlayer insulation film in which the lower interconnection is buried, and...
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7190232 |
Self-biased active VCO level shifter
A voltage-controlled oscillator (VCO) circuit includes first, second, third, and fourth transistors, each with a first terminal, a second terminal, and a control terminal. The first terminal of the...
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7173316 |
Semiconductor device
An N type semiconductor layer is epitaxially grown on a P type semiconductor substrate of which one end is grounded, and an element isolation layer made of a P type diffusion layer is formed by...
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7126152 |
Storage device
A storage device includes a first electrode, a second electrode facing the first electrode, an inter-electrode material layer provided between the first electrode and the second electrode, and a...
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7112835 |
Semiconductor device including a capacitance
It is an object to obtain a semiconductor device including a capacitance having a great Q-value. In an SOI substrate comprising a support substrate ( 165 ), a buried oxide film ( 166 ) and an SOI...
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7081663 |
Gate-enhanced junction varactor with gradual capacitance variation
A semiconductor junction varactor utilizes gate enhancement for enabling the varactor to achieve a high ratio of maximum capacitance to minimum capacitance. The varactor has a gate region ( 131 or...
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7078787 |
Design and operation of gate-enhanced junction varactor with gradual capacitance variation
A semiconductor junction varactor is designed with gate enhancement for enabling the varactor to achieve a high ratio of maximum capacitance to minimum capacitance. The varactor has a gate region (...
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7067869 |
Adjustable 3D capacitor
There is a need for adjustable capacitors for use in LC or RC matching networks in micro-circuits. This has been achieved by forming a set of individual capacitors that share a common bottom...
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7053465 |
Semiconductor varactor with reduced parasitic resistance
A semiconductor varactor with reduced parasitic resistance. A contact isolation structure ( 32 ) is formed in a well region ( 20 ). The gate contact structures ( 70 ) are formed above the contact...
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7030463 |
Tuneable electromagnetic bandgap structures based on high resistivity silicon substrates
Electrically tunable electromagnetic bandgap (“TEBG”) structures using a ferroelectric thin film on a semiconductor substrate, tunable devices that include such a TEBG structure, such as a...
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7023038 |
Silicon barrier capacitor device structure
The present invention disclosed a silicon barrier capacitor device structure. By applying CVD or PVD technologies to deposit poly-silicon layers as the dielectric of capacitor on the doping region...
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7019384 |
Integrated, tunable capacitance device
An integrated, tunable capacitance device includes a semiconductor region, which is, preferably, N-doped, formed in a semiconductor body, having an insulating thick oxide region, which areally...
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7009276 |
Thin film capacitor, thin film capacitor array and electronic component
A thin film capacitor with small electrode resistance and great Q-value which comprises a small number of thin films that are deposited successively is disclosed. It is effective for...
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6995068 |
Double-implant high performance varactor and method for manufacturing same
A varactor designed to enable voltage controlled oscillator (VCO) integration in wireless systems is the base-emitter junction of a specially optimized NPN device formed with a double base implant....
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6970055 |
Tunable planar capacitor
A tunable capacitor that introduces significantly less loss, if any, costs less and is smaller than previously available. A bias electrode is coupled to a FE material. The capacitor electrodes are...
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6949815 |
Semiconductor device with decoupling capacitors mounted on conductors
A semiconductor device has an LSI device provided with a plurality of power supply line connection pads and ground line connection pad in a peripheral edge part of a circuit-formation surface,...
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6946374 |
Methods of manufacturing flash memory semiconductor devices
A manufacturing method for fabricating flash memory semiconductor devices is disclosed. According to one example, the manufacturing method may include: forming a trench on a silicon substrate by...
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6943399 |
Varactor and differential varactor
A varactor is provided. The varactor includes a second type substrate, two gate structures, a first type doped region and a second type doped region. The two gate structures are disposed over the...
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6933796 |
Voltage controlled oscillating circuit
A voltage controlled oscillating circuit operable to output a variable frequency, includes a variable capacitance element with the variable frequency varying with a variation in capacitance of the...
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6927644 |
Low-loss tunable ferro-electric device and method of characterization
A tunable ferroelectric component and a narrowband resonant circuit for measuring the loss of the ferroelectric component. The ferroelectric component may be a capacitor integrated in the resonant...
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6897537 |
Micro-electro-mechanical system (MEMS) variable capacitor apparatuses and related methods
Micro-Electro-Mechanical System (MEMS) Variable Capacitor Apparatus and Related Methods. According to one embodiment, a MEMS variable capacitor is provided. The variable capacitor can include first...
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6891251 |
Varactors for CMOS and BiCMOS technologies
Varactors are provided which have a high tunability and/or a high quality factor associated therewith as well as methods for fabricating the same. One type of varactor disclosed is a quasi...
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6882029 |
Junction varactor with high Q factor and wide tuning range
A PN-junction varactor includes a first ion well of first conductivity type formed on a semiconductor substrate of second conductivity type. A first dummy gate is formed over the first ion well. A...
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6878983 |
High performance varactor diodes
A varactor diode having a first electrode comprising a well region of a first conductivity type in a substrate, a second electrode comprising a first plurality of diffusion regions of a second...
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6835977 |
Variable capactor structure
A variable capacitor comprising a substrate having a first type ion-doped buried layer, a first type ion-doped well, a second type ion-doped region and a conductive layer thereon. The first type...
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6825546 |
CMOS varactor with constant dC/dV characteristic
A varactor is formed with a semiconductor junction having a retrograde dopant concentration profile in a depletion region. The retrograde dopant concentration profile results in an approximately...
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6825089 |
Increased quality factor of a varactor in an integrated circuit via a high conductive region in a well
The present invention provides an varactor, a method of manufacture thereof. In an exemplary embodiment, the varactor includes a semiconductor substrate and well of a first and second conductivity...
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6818959 |
MEMS devices with voltage driven flexible elements
An array of nanometric dimensions consisting of two or more arms, positioned side by side, wherein the arms are of such nanometric dimensions that the beams can be moved or deformed towards or away...
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6794707 |
Variable capacitor using MOS gated diode with multiple segments to limit DC current
A voltage-variable capacitor uses the channel-to-substrate junction from a gated diode formed from a metal-oxide-semiconductor transistor. The transistor gate has at least two contacts that are...
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6787882 |
Semiconductor varactor diode with doped heterojunction
A semiconductor device includes a plurality of barrier layers and a plurality of quantum well layers which are alternately interleaved with each other and disposed on a substrate of semiconductor...
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6762481 |
Electrically programmable nonvolatile variable capacitor
A basic form of a variable capacitive apparatus and its actuating method are disclosed. The apparatus is a simple two-terminal structure and may be set by short duration, low voltage electrical...
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