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7579635 Heterojunction bipolar transistor  
A base layer made of SiGe mixed crystal includes a spacer layer formed in contact with a collector layer with no base impurities diffused therein and an intrinsic base layer formed in contact with...
7566585 Semiconductor component and method for production of a semiconductor component  
A semiconductor substrate, a semiconductor chip and a semiconductor component with areas composed of a stressed monocrystalline material, and a method for production of a semiconductor component is...
7495264 Semiconductor device with high dielectric constant insulating film and manufacturing method for the same  
A semiconductor device has a substrate and a dielectric film formed directly or indirectly on the substrate. The dielectric film contains a metal silicate film, and a silicon concentration in the...
7492034 Semiconductor device  
A semiconductor device ( 1, 20 - 80 ) has an emitter terminal ( 2 ), a collector terminal ( 3 ) and also a semiconductor body ( 4 ) provided between emitter terminal ( 2 ) and collector terminal (...
7465969 Bipolar transistor and method for fabricating the same  
A bipolar transistor includes a Si single crystalline layer serving as a collector, a single crystalline Si/SiGeC layer and a polycrystalline Si/SiGeC layer which are formed on the Si single...
7368361 Bipolar junction transistors and method of manufacturing the same  
A substrate has a collector region of a first conductivity type, and a base layer of a single crystalline structure and including impurities of a second conductivity type is located over the...
7256472 Bipolar transistor  
A bipolar transistor and method of making a bipolar transistor is disclosed. In one embodiment, the bipolar transistor includes a polysilicon layer into which impurity atoms are inserted, thereby...
7253498 Bipolar transistor with geometry optimized for device performance, and method of making same  
The present invention is generally directed to bipolar transistors with geometry optimized for device performance and various methods of making same. In one illustrative embodiment, the device...
7183627 Independent control of polycrystalline silicon-germanium in an HBT and related structure  
In one embodiment a precursor gas for growing a polycrystalline silicon-germanium region and a single crystal silicon-germanium region is supplied. The precursor gas can be, for example, GeH 4 ....
7173274 Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology  
A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor...
7091578 Bipolar junction transistors and methods of manufacturing the same  
A substrate has a collector region of a first conductivity type, and a base layer of a single crystalline structure and including impurities of a second conductivity type is located over the...
7078744 Transistor emitter having alternating undoped and doped layers  
A disclosed embodiment is a method for fabricating an emitter structure, comprising a step of conformally depositing an undoped polysilicon layer in an emitter window opening and over a base. Next,...
7049681 Bipolar transistor device having phosphorous  
A Si 1-x Ge x layer 111 b functioning as the base composed of an i-Si 1-x Ge x layer and a p + Si 1-x Ge x layer is formed on a collector layer 102, and a Si cap layer 111 a as the...
6939728 Method of fabricating silicon emitter with a low porosity heavily doped contact layer  
A high emission electron emitter and a method of fabricating a high emission electron emitter are disclosed. A high emission electron emitter includes an electron injection layer, an active layer...
6891249 Method and system for high density integrated bipolar power transistor using buried power buss  
A method and system for providing a bipolar power transistor on a semiconductor device is disclosed. The method and system comprise providing a semiconductor substrate. The method and system...
6888226 Semiconductor structure and method for improving its ability to withstand electrostatic discharge (ESD) and overloads  
A semiconductor structure includes a base layer of a first conductivity type, a first layer of the first conductivity type arranged on the base layer and having a dopant concentration that is lower...
6881639 Method of manufacturing semiconductor device  
The present invention provides a method of manufacturing semiconductor devices, by which InGaAs-base C-top HBTs are manufactured at low cost. Helium ions with a smaller radius are implanted into a...
6867477 High gain bipolar transistor  
According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor might be a lateral PNP bipolar transistor and the base may comprise, for...
6864538 Protection device against electrostatic discharges  
An ESD protection device encompassing a vertical bipolar transistor that is connected as a diode and has an additional displaced base area. The assemblage has a space-saving configuration and a...
6806555 Semiconductor component and method for fabricating it  
A semiconductor component and a method for fabricating it includes a substrate and an epitaxial layer situated thereon and integrating at least a first and a second bipolar component in the layer....
6800880 Heterojunction bipolar transistors with extremely low offset voltage and high current gain  
Novel heterojunction bipolar transistors (HBT's) with high current gain and extremely low offset voltage are disclosed. Owing to the insertion of spacer/δ-doped sheet/spacer at base-emitter (B-E)...
6781214 Metastable base in a high-performance HBT  
According to one exemplary embodiment, a heterojunction bipolar transistor is fabricated by forming a metastable epitaxial silicon-germaniuim base on a collector. The metastable epitaxial...
6703687 Bipolar transistor and method for manufacturing the same  
A bipolar transistor and a method for manufacturing the bipolar transistor are provided. The bipolar transistor includes a collector region including a semiconductor substrate doped with a first...
6657281 Bipolar transistor with a low K material in emitter base spacer regions  
The present invention provides a bipolar transistor located on a semiconductor wafer substrate. The bipolar transistor may comprise a collector located in the semiconductor wafer substrate, a base...
6653715 Bipolar transistor  
A bipolar transistor using a B-doped Si and Ge alloy for a base in which a Ge content in an emitter-base depletion region and in a base-collector depletion region is greater than a Ge content in a...
6611044 Lateral bipolar transistor and method of making same  
A lateral bipolar transistor for an intergrated circuit is provided that maintains a high current gain and high frequency capability without sacrificing high Early voltage. More particularly, a...
6586782 Transistor layout having a heat dissipative emitter  
Various embodiments of a novel transistor layout having improved electrical and heat dissipation characteristics are disclosed. Several embodiments include various intrinsic components contoured to...
6583494 Reduced base resistance in a bipolar transistor  
According to a disclosed method, a dopant spike region is formed in a link base region, which connects an intrinsic base region to an extrinsic base region. For example, the intrinsic base region...
6559517 Structure for a semiconductor device  
An exemplary embodiment of the invention is a semiconductor device comprising a substrate of a first conductivity type and a subcollector of a second conductivity type provided on the substrate. An...
6528829 Integrated circuit structure having a charge injection barrier  
The invention relates to an integrated circuit structure that includes a substrate wafer having an active device layer disposed on a surface of the substrate wafer and having an electrically...
6492664 Heterojunction bipolar transistor with reduced offset voltage  
A heterojunction bipolar transistor comprises a collector layer, a base layer, and an emitter layer stacked sequentially. The base layer comprises a first base layer joined to the collector layer...
6469365 Semiconductor component with a structure for avoiding parallel-path currents and method for fabricating a semiconductor component  
A semiconductor component having a structure for avoiding parallel-path currents in the semiconductor component includes a substrate of a first conductivity type having a surface. A plurality of...
6459103 Negative-differential-resistance heterojunction bipolar transistor with topee-shaped current-voltage characteristics  
An InP/InGaAlAs heterojunction bipolar transistor with the characteristics of amplification and negative-differential-resistance phenomenon is presented in the invention. The 3-terminal...
6445040 Lateral bipolar type input/output protection device  
A lateral bipolar type input/output protection device of the present invention includes a N type well formed below an emitter impurity diffusion layer of N type over a P type substrate. With such...
6441462 Self-aligned SiGe NPN with improved ESD robustness using wide emitter polysilicon extension  
A semiconductor bipolar transistor structure having improved electrostatic discharge (ESD) robustness is provided as well as a method of fabricating the same. Specifically, the inventive...
6410975 Bipolar transistor with reduced base resistance  
According to a disclosed method, a dopant spike region is formed in a link base region, which connects an intrinsic base region to an extrinsic base region. For example, the intrinsic base region...
6335558 Complementary bipolar/CMOS epitaxial structure and method  
An epitaxial layer is formed on a P type silicon substrate in which a plurality of P+ buried layer regions, a plurality of N+ buried layer regions, and a P+ field layer region occupying most of the...
6316817 MeV implantation to form vertically modulated N+ buried layer in an NPN bipolar transistor  
High energy implantation through varying vertical thicknesses of one or more films is used to form a vertically modulated sub-collector, which simultaneously reduces both the vertical and lateral...
6249031 High gain lateral PNP and NPN bipolar transistor and process compatible with CMOS for making BiCMOS circuits  
A method and lateral bipolar transistor structure are achieved, with high current gain, compatible with CMOS processing to form BiCMOS circuits. Making a lateral PNP bipolar involves forming an N -...
6207997 Thin film transistor for antistatic circuit and method for fabricating the same  
A thin film transistor for an antistatic circuit includes: wells formed on a silicon substrate; insulating layers for electrical isolation between electrodes formed within the wells; low density...
6114745 Bipolar transistor having high emitter efficiency  
A vertical conduction NPN bipolar transistor with a tunneling barrier of silicon carbide in the emitter providing a high emitter injection efficiency and high, stable current gain. The emitter...
6043559 Integrated circuit package which contains two in plane voltage busses and a wrap around conductive strip that connects a bond finger to one of the busses  
An integrated circuit package. The package includes a substrate that has a first internal conductive bus and a second internal conductive bus that are located on a common layer of the substrate and...
6028345 Reduced resistance base contact for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer  
A bipolar transistor (100) and a method for forming the same. A diffusion source dielectric layer (118) is deposited over a semiconductor body (101). An emitter window (116) is then etched through...
5965929 Bipolar Silicon transistor with arsenic and phosphorous ratio  
A bipolar silicon transistor includes at least one emitter zone with n + arsenic doping and with a phosphorus doping. The ratio between arsenic dopant concentration and phosphorus dopant...
5939768 Vertical bipolar power transistor with an integrated sensing circuit  
A vertical structure, integrated bipolar transistor incorporating a current sensing resistor, comprises a collector region, a base region overlying the collector region, and an emitter region over...
5872391 Bipolar junction transistors having an increased safe operating area  
A bipolar junction transistor includes a semiconductor substrate having a surface, a base region of first conductivity type in the substrate, and an emitter region of second conductivity type...
5777376 Pnp-type bipolar transistor  
A pnp-type bipolar transistor includes a highly dop p-conducting emitter zone, a base zone and a buried n-conducting zone below the emitter zone. An additional p-conducting region is connected to...
5766999 Method for making self-aligned bipolar transistor  
A SiGe alloy film containing electrically active impurity in a concentration higher than the intrinsic base layer is formed on the eaves-structured polycrystalline silicon film for base electrode....
5691546 Semiconductor device having a high current gain and a higher Ge amount at the base region than at the emitter and collector regions, and photoelectric conversion apparatus using the device  
A semiconductor device comprises at least an emitter region of a first conductivity type, a base region of a second conductivity type, and a collector region of a first conductivity type. The base...
5648676 Semiconductor device with protective element  
A semiconductor device has a first-conduction-type semiconductor substrate (19), an internal circuit including a vertical bipolar transistor (18) formed in a second-conduction-type semiconductor...
Matches 1 - 50 out of 138 1 2 3 >