Matches 1 - 39 out of 39
Match Document Document Title
7115973 Dual-sided semiconductor device with a resistive element that requires little silicon surface area  
A dual-sided semiconductor device is formed on a wafer with a resistive element that is formed through the wafer. By forming the resistive element through the wafer, a resistive element, such as a...
6936868 Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same  
A sequential mesa type avalanche photodiode (APD) includes a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of...
6847045 High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission  
A cold electron emitter may include a heavily a p-doped semiconductor, and dielectric layer, and a metallic layer (p-D-M structure). A modification of this structure includes a heavily n+ doped...
6707128 Vertical MISFET transistor surrounded by a Schottky barrier diode with a common source and anode electrode  
A semiconductor device comprises a first semiconductor layer of a first conductivity type provided on a semiconductor substrate of the first conductivity type, a base layer of a second conductivity...
6566749 Semiconductor die package with improved thermal and electrical performance  
A semiconductor die package is disclosed. In one embodiment, the package includes a semiconductor die comprising a vertical power transistor. A source electrode and a gate contact region are at the...
5659197 Hot-carrier shield formation for bipolar transistor  
The present invention provides a bipolar transistor in which a lightly doped n-type hot-carrier shield extends in an epitaxial layer adjacent from a poly-emitter to an extrinsic base. This...
5602413 Avalanche phototransistor  
A bipolar avalanche phototransistor has a thin, heavily doped base portion adjacent the collector to improve avalanche characteristics. The structure may have a lateral, as well as vertical,...
5539233 Controlled low collector breakdown voltage vertical transistor for ESD protection circuits  
An npn transistor having a low collector-base breakdown voltage. An emitter region (104, 106) of a first conductivity type is located in a semiconductor substrate (102). A base region (14) of a...
5345103 Gate controlled avalanche bipolar transistor  
An insulated gate controlled avalanche bipolar transistor has a heavily doped (with doping of at least 1×10 18 cm -3 ) substrate and a lightly doped channel layer of the same conductivity type on...
5235216 Bipolar transistor using emitter-base reverse bias carrier generation  
A circuit for generating a negative voltage includes: a bipolar transistor including, a) an N type collector region, b) a P type base region, and c) an N type emitter region, the base region width...
5036372 Heterojunction avalanche transistor  
An avalanche transistor has a heterojunction emitter-base junction. The avalanche transistor includes a spacer layer provided between an emitter layer and a base layer. The spacer layer has an...
4712152 Semiconductor integrated circuit device  
A semiconductor integrated circuit device comprising: at least two NPN transistors whose bases and emitters are connected to the ground and whose collectors are connected to an input terminal; one...
4642491 Single transistor driver circuit  
A driver circuit is provided which includes a field effect transistor having first and second spaced apart semiconductor regions of a given conductivity type and a third semiconductor region of a...
4291319 Open base bipolar transistor protective device  
A transistor, used in the switching of current in an inductive load, is protected by a similar transistor connected between collector and base. The protective transistor has a lower breakdown...
4288708 Differentially modulated avalanche area magnetically sensitive transistor  
A new semiconductive device for sensing uniaxial magnetic fields is described. The sensor is essentially a dual collector lateral bipolar transistor operated in the avalanche region. Each of the...
4276555 Controlled avalanche voltage transistor and magnetic sensor  
A heretofore undiscovered suddenly conducting avalanche voltage effect is described with relationship to a new family of hybrid transistors. The devices constructed also exhibit magnetic...
4262295 Semiconductor device  
A semiconductor device for use as a surge arrester of NPN (or PNP) construction, in which two NPN (or PNP) elements having different avalanche breakdown voltages are so formed that at least the...
4100561 Protective circuit for MOS devices  
The circuit protects the oxide of MOS devices from destructive breakdown by limiting the potential difference which can exist between two circuit nodes. By forming a protective circuit between each...
4041515 Avalanche transistor operating above breakdown  
An avalanche transistor (three terminal avalanche device) is provided with a p + electrode, for example, added to an n + - n - n + structure. A reverse bias junction is provided by a first...
3855605 CARRIER INJECTED AVALANCHE DEVICE  
The use of externally injected carriers for biasing a diode into an avalanche mode of operation is disclosed.
3829883 MAGNETIC FIELD DETECTOR EMPLOYING PLURAL DRAIN IGFET  
A mode of operation of a three-drain configured insulated gate field effect transistor which is extremely sensitive to magnetic fields is disclosed. The gate of the transistor is biased to a level...
3699541 TWO-TERMINAL TRANSISTOR MEMORY UTILIZING EMITTER-BASE AVALANCHE BREAKDOWN  
A semiconductor memory cell containing a single transistor having an uncontacted base is operated as a two-terminal device with a voltage pulse circuit coupled to the collector and a conduction...
3699540 TWO-TERMINAL TRANSISTOR MEMORY UTILIZING COLLECTOR-BASE AVALANCHE BREAKDOWN  
A semiconductor memory cell containing a single transistor having an uncontacted base is operated as a two-terminal device with a voltage pulse circuit coupled to the collector and a conduction...
3508127 SEMICONDUCTOR INTEGRATED CIRCUITS  
3339086 Surface controlled avalanche transistor  
3319138 Fast switching high current avalanche transistor  
3196329 Symmetrical switching diode  
3119947 Semiconductive electron emissive device  
3111590 Transistor structure controlled by an avalanche barrier  
3099591 Semiconductive device  
3098160 Field controlled avalanche semiconductive device  
3093755 Semiconductor diode exhibiting differential negative resistance  
3062972 Field effect avalanche transistor circuit with selective reverse biasing means  
3060327 Transistor having emitter reversebiased beyond breakdown and collector forward-biased for majority carrier operation  
3054033 Junction type semiconductor device  
3015048 Negative resistance transistor  
2938819 Intermetallic semiconductor device manufacturing  
2936425 Semiconductor amplifying device  
3821657 Title is not available  
Matches 1 - 39 out of 39