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7622790 Transistor assembly and method for manufacturing same  
A transistor assembly having a transistor includes a plurality of transistor regions, each of which has a vertical transistor structure having a collector semiconductor region, a base semiconductor...
7615455 Integrated circuit bipolar transistor  
A bipolar transistor having a base region resting by its lower surface on a collector region and surrounded with a first insulating layer, a base contact conductive region in contact with an...
7554174 Bipolar transistor having semiconductor patterns filling contact windows of an insulating layer  
Disclosed are a bipolar transistor comprising an emitter terminal and a base terminal having substantially equal heights, and a method of fabricating the same. The bipolar transistor comprises a...
7547958 Semiconductor device, electronic device, and manufacturing method of the same  
The present invention provides a technology that makes it possible to enhance the gain and the efficiency of an RF bipolar transistor. Device isolation is given between a p+ type isolation region...
7466010 Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border  
The present invention provides a bipolar transistor having a raised extrinsic base silicide and an emitter contact border that are self-aligned. The bipolar transistor of the present invention...
7394113 Self-alignment scheme for a heterojunction bipolar transistor  
Embodiments herein present a structure, method, etc. for a self-alignment scheme for a heterojunction bipolar transistor (HBT). An HBT is provided, comprising an extrinsic base, a first...
7297991 Bipolar junction transistor and fabricating method  
A bipolar junction transistor includes a dielectric layer formed on a predetermined region of a substrate, an opening formed in the dielectric layer and a portion of the substrate being exposed, a...
7256472 Bipolar transistor  
A bipolar transistor and method of making a bipolar transistor is disclosed. In one embodiment, the bipolar transistor includes a polysilicon layer into which impurity atoms are inserted, thereby...
7227222 Semiconductor device and manufacturing method thereof  
The present invention is related to a semiconductor device that forms an inductor on the same semiconductor substrate together with other active elements and a manufacturing method thereof. The...
7180159 Bipolar transistor having base over buried insulating and polycrystalline regions  
A bipolar transistor in a monocrystalline semiconductor substrate ( 101 ), which has a first conductivity type and includes a surface layer ( 102 ) of the opposite conductivity type. The transistor...
7173274 Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology  
A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor...
7170113 Semiconductor device and method of manufacturing the same  
An aspect of a semiconductor device includes: a collector layer of first conductive type formed on a semiconductor substrate; a graft base layer of second conductive type formed in a surface region...
7157786 Structure of a bipolar junction transistor and fabricating method thereof  
A method for fabricating a bipolar junction transistor on a wafer is disclosed. The wafer has a N-type doped area and a plurality of isolated structures. A protection layer is formed on the wafer...
7135757 Bipolar transistor  
A bipolar transistor includes a first layer with a collector. A second layer has a base cutout for a base. A third layer includes a lead for the base. The third layer is formed with an emitter...
7091100 Polysilicon bipolar transistor and method of manufacturing it  
In the inventive method of producing a base terminal structure for a bipolar transistor, an etch stop layer is applied on a single-crystal semiconductor substrate, a poly-crystal base terminal...
7030431 Metal gate with composite film stack  
A novel metal gate structure includes a gate oxide layer formed on a surface of a silicon substrate, a doped silicon layer stacked on the gate oxide layer, a CVD ultra-thin titanium nitride film...
7005665 Phase change memory cell on silicon-on insulator substrate  
The present invention includes a method for forming a phase change material memory device and the phase change memory device produced therefrom. Specifically, the phase change memory device...
6974977 Heterojunction bipolar transistor  
A bipolar transistor is provided which is of high reliability and high gain, and which is particularly suitable to high speed operation. The bipolar transistor operates with high accuracy and with...
6933202 Method for integrating SiGe NPN and vertical PNP devices on a substrate and related structure  
According to one exemplary embodiment, a method for forming an NPN and a vertical PNP device on a substrate comprises forming an insulating layer over an NPN region and a PNP region of the...
6927428 Lateral heterojunction bipolar transistor  
A heterojunction bipolar transistor ( 30 ) in a silicon-on-insulator (SOI) structure is disclosed. The transistor collector ( 28 ), heterojunction base region ( 20 ), and intrinsic emitter region (...
6900519 Diffused extrinsic base and method for fabrication  
The present invention provides a unique device structure and method that provides increased transistor performance in integrated bipolar circuit devices. The preferred embodiment of the present...
6897547 Semiconductor device including bipolar junction transistor, and production method therefor  
A semiconductor device includes a low resistance semiconductor substrate, a high resistance semiconductor layer formed on the substrate, an insulation layer formed on the semiconductor layer, and a...
6890826 Method of making bipolar transistor with integrated base contact and field plate  
A method of manufacturing a bipolar junction transistor results in an integrated polysilicon base contact and field plate element minimally spaced from a polysilicon emitter contact by using a...
6873029 Self-aligned bipolar transistor  
A heterojunction bipolar transistor with self-aligned features having a self-aligned dielectric sidewall spacer disposed between base contact and emitter contact, and self-aligned base mesa aligned...
6828614 Semiconductor constructions, and methods of forming semiconductor constructions  
The invention includes an array of devices and a charge pump supported by a semiconductive material substrate. A damage region is under the array, and extends less than or equal to 50% of a...
6818941 Thin film electron emitter, display device using the same and applied machine  
As the top electrode material of a thin-film electron emitter, a material having a bandgap wider than that of Si and electrical conductivity is used. In particular, a conductive oxide such as an...
6808999 Method of making a bipolar transistor having a reduced base transit time  
A bipolar transistor has a high performance and high reliability, which are obtained by enhancing a withstanding voltage between an emitter and a base. The bipolar transistor includes a first...
6787879 Interfacial oxide in a transistor  
According to a disclosed embodiment, a gas is supplied at a certain partial pressure for a chemical reaction with a top surface of a base in a transistor. The top surface of the base is heated to a...
6765243 HBT having a controlled emitter window opening  
According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a top surface. The heterojunction bipolar transistor further comprises a first spacer and a second...
6730557 Semiconductor device and production thereof  
A semiconductor device having a bipolar transistor which is capable of high integration, and a semiconductor device in which the bipolar transistor has good characteristic properties. A process for...
6707130 Bipolar device with polycrystalline film contact and resistance  
A first dopant impurity producing a conductivity type for formation of an intrinsic base diffusion layer and a dopant impurity producing the opposite conductivity type are implanted into a...
6680522 Semiconductor device with reduced electrical variation  
An object of the invention is to minimize variation in characteristics of a vertical bipolar transistor. An insulating side wall spacer composed of a silicon nitride film 10 and a silicon oxide...
6657279 PNP lateral bipolar electronic device and corresponding manufacturing process  
The invention relates to a process for making a lateral PNP bipolar electronic device integrated monolithically on a semiconductor substrate together with other bipolar devices of the NPN type,...
6653714 Lateral bipolar transistor  
A lateral bipolar transistor includes: a substrate; a first insulative region formed on the substrate; a first semiconductor region of a first conductivity type selectively formed on the first...
6642606 Method for producing siliconized polysilicon contacts in integrated semiconductor structures  
In the manufacture of integrated semiconductor structures, the problem frequently occurs that the resistance of polysilicon structures employed as interconnects must be selectively lowered. In...
6611044 Lateral bipolar transistor and method of making same  
A lateral bipolar transistor for an intergrated circuit is provided that maintains a high current gain and high frequency capability without sacrificing high Early voltage. More particularly, a...
6593640 Bipolar transistor and methods of forming bipolar transistors  
A bipolar transistor comprises a base region and an an extrinsic base region being located generally adjacent to the base region. The extrinsic base region has implanted therein a dopant and a...
6528861 High performance bipolar transistor architecture  
A method of fabricating a bipolar transistor structure is provided in which a blanket silicon-germanium (SiGe) film is used in a self-aligned manner to form the active base region of the bipolar...
6509625 Guard structure for bipolar semiconductor device  
A guard ring structure formed around the periphery of a bipolar semiconductor device. A guard region ( 11 ) is formed in a substrate ( 1 ) of the device so as to extend adjacent a peripheral...
6504231 Bipolar transistor in which impurities are introduced from emitter electrode material to form emitter region  
A first insulating film 4 having a first opening portion is formed on an emitter region 10 and a second insulating film 6 having a second opening portion smaller than the first opening...
6495904 Compact bipolar transistor structure  
A bipolar transistor structure that includes a semiconductor material substrate that has a bottom substrate and base region of a first conductivity type and a buried layer, collector region and...
6482710 Bipolar transistor and manufacting method thereof  
A bipolar transistor according to the invention is provided with structure that an intrinsic base made of single crystal Si—Ge and a base leading-out electrode are connected via a link base made...
6441462 Self-aligned SiGe NPN with improved ESD robustness using wide emitter polysilicon extension  
A semiconductor bipolar transistor structure having improved electrostatic discharge (ESD) robustness is provided as well as a method of fabricating the same. Specifically, the inventive...
6437416 Semiconductor structure having a planar junction termination with high breakdown voltage and low parasitic capacitance  
The breakdown voltage of a semiconductor device, such as a transistor fabricated in a device region in and abutting the surface of a semiconductor body with a field oxide surrounding the device...
6436781 High speed and low parasitic capacitance semiconductor device and method for fabricating the same  
A semiconductor device including a bipolar transistor formed by epitaxial growth or ion implantation is provided has an epitaxial silicon collector layer, a base region directly under an emitter...
6433387 Lateral bipolar transistor  
Lateral bipolar transistor, in which a thin diffusion barrier ( 4 ) is applied to a base region ( 10 ) between an emitter region ( 9 ) and a collector region ( 11 ), and there is present, on said...
6396110 Semiconductor device with multiple emitter contact plugs  
A semiconductor device, such as a BiCMOS, includes a bipolar transistor having at least an emitter region. An emitter electrode is formed on the emitter region. Further, a wiring pattern is formed...
6329699 Bipolar transistor with trenched-groove isolation regions  
The invention relates to semiconductor devices having a bipolar transistor to form an isolation area within a base electrode contact area to ensure stable contact of the base electrode. The bipolar...
6323538 Bipolar transistor and method for fabricating the same  
An n-type first single crystal silicon layer is provided as collector region over a silicon substrate with a first insulating film interposed therebetween. A p-type first polysilicon layer is...
6271576 Laser synthesized ceramic sensors and method for making  
Laser apparatus and methods are provided for synthesizing areas of ceramic substrates or thin films, such ceramics as Silicon Carbide and Aluminum Nitride, to produce electronic devices and...
Matches 1 - 50 out of 300 1 2 3 4 5 6 >