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Match Document Document Title
8183063 Organic light emitting device and method of fabricating the same  
An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes...
8183567 Array substrate for liquid crystal display device and method of fabricating the same  
An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor...
8178877 Thin film transistor and method for fabricating thin film transistor  
Disclosed are a thin film transistor having high reliability and providing a simplified fabricating process, and a method of fabricating the thin film transistor. In the method, a dielectric...
8178884 Thin film transistor including compound semiconductor oxide, method of manufacturing the same and flat panel display device having the same  
A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode...
8168973 Thin film transistor  
The thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode, an amorphous semiconductor layer over the gate insulating layer,...
8168968 Thin film transistor and organic light emitting display device using the same  
There is provided a thin film transistor exhibiting stable reliability and electrical characteristics by forming an active layer by adding material having a large difference of electronegativity...
8164099 Display device and manufacturing method thereof  
A display device with improved reliability and a manufacturing method of the same with improved yield. A display device according to the invention comprises a display area including a first...
8164095 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer  
It is an object to provide a semiconductor device which has a large size and operates at high speed. A top gate transistor which includes a semiconductor layer of single-crystal and a bottom gate...
8153031 In-Ga-Zn-Sn type oxide sinter and target for physical film deposition  
An oxide sintered body including an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and including a compound shown by Ga2In6Sn2O16 or (Ga,In)2O3.
8154024 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film  
An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior...
8154023 Low temperature polysilicon thin film transistor  
A low temperature polysilicon thin film transistor and method of manufacturing the same is provided. The low temperature polysilicon thin film transistor comprises a channel region. Among others,...
8148723 Light-emitting device and manufacturing method thereof  
A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked in this order (a thin-film stacked body); first...
8143620 System and method for adaptive classification of audio sources  
Systems and methods for adaptively classifying audio sources are provided. In exemplary embodiments, at least one acoustic signal is received. One or more acoustic features based on the at least...
8138098 Method of patterning stacked structure  
A stacked structure including a soluble organic semiconductor material and a water soluble photosensitive material is provided. The water soluble photosensitive material is disposed on the surface...
8138501 Switching element and manufacturing method thereof  
Disclosed is a switching element provided with a gate dielectric film and an active layer disposed in contact with the gate dielectric film. The active layer includes carbon nanotubes, and the gate...
8134153 Semiconductor apparatus and fabrication method of the same  
It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus...
8124972 Thin film transistor  
The thin film transistor includes a gate insulating layer covering a gate electrode, over a substrate having an insulating surface; a semiconductor layer forming a channel formation region, in...
8120028 Active device array substrate, color filter substrate and manufacturing methods thereof  
An active device array substrate comprising a substrate, a pixel array, a partition configuration and an alignment material layer is provided. The substrate has an alignment region and a...
8120029 Thin film transistor and method of manufacturing the same  
Disclosed is a thin film transistor (TFT). The TFT may include an intermediate layer between a channel and a source and drain. An increased off current, which may occur to a drain area of the TFT,...
8120030 Thin film transistor and display device  
Off current of a bottom gate thin film transistor in which a semiconductor layer is shielded from light by a gate electrode is reduced. A thin film transistor includes a gate electrode layer; a...
8119468 Thin film transistor and method for manufacturing the same  
Disclosed is a thin film transistor which includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which functions as a...
8115205 Electrophoretic display device and method of manufacturing and repairing the same  
Provided is an electrophoretic display device and a method of manufacturing and repairing the electrophoretic display device. The electrophoretic display device includes: a gate line, a gate...
8115209 Dual gate layout for thin film transistor  
A dual gate layout of a thin film transistor of liquid crystal display to alleviate dark current leakage is disclosed. The layout includes (1) a polysilicon on a substrate having a L-shaped or a...
8115201 Semiconductor device with oxide semiconductor formed within  
One of the objects of the present invention is to provide a thin film transistor using an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn), in which the contact...
8115210 Semiconductor display device  
A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long,...
8110829 Array substrate of liquid crystal display and method for fabricating the same  
A thin film transistor (TFT) for a liquid crystal display device includes a gate electrode, a source electrode, a drain electrode, an active region including a first semiconductor layer and a...
8110453 Low temperature thin film transistor process, device property, and device stability improvement  
A method and apparatus for forming a thin film transistor is provided. A gate dielectric layer is formed, which may be a bilayer, the first layer deposited at a low rate and the second deposited at...
8106383 Self-aligned graphene transistor  
A graphene field effect transistor includes a gate stack, the gate stack including a seed layer, a gate oxide formed over the seed layer, and a gate metal formed over the gate oxide; an insulating...
8106397 Thin film transistor formed on flexible substrate and method of manufacturing the same  
A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the cha...
8101953 Thin film transistor having a plurality of carbon nanotubes  
A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting...
8101509 Semiconductor integrated circuit device  
A method of fabricating a semiconductor integrated circuit includes forming a first dielectric layer on a semiconductor substrate, patterning the first dielectric layer to form a first patterned...
8101948 Switching element  
In a switching element using, for the active layer, a carbon nanotube (CNT) dispersed film which can be manufactured at low temperatures, the interaction between the CNT and the surface of the gate...
8097880 Semiconductor component including a lateral transistor component  
A semiconductor component including a lateral transistor component is disclosed. One embodiment provides an electrically insulating carrier layer. A first and a second semiconductor layer are...
8093595 Thin film array panel and manufacturing method thereof  
A method of manufacturing a thin film array panel is provided, which includes: forming a gate line formed on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor...
8093591 Semiconductor device and manufacturing method thereof  
It is an object of the present invention to provide a manufacturing method of semiconductor device whereby the number of processes is decreased due to simultaneously forming a contact hole in a...
RE43079 Thin film transistors for liquid crystal displays  
The amorphous silicon layer overlaps the gate electrode and the edges of the amorphous silicon layer are substantially encompassed by the edges of the gate electrode. The distance between the edges...
8093603 Organic light emitting diode display  
An organic light emitting diode display includes a substrate, a pixel electrode, a pixel defining film, a light absorbing layer pattern, an organic light emitting layer and a common electrode. The...
8089072 Thin film transistor array panel and manufacturing method thereof  
A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a...
8084771 Bottom-gate thin film transistor and method of fabricating the same  
A bottom-gate thin film transistor includes a gate electrode, a gate insulating layer and a microcrystalline silicon layer. The gate electrode is disposed on a substrate. The gate insulating layer...
8080822 Solution-processed inorganic films for organic thin film transistors  
A method for fabricating a sol-gel film composition for use in a thin film transistor is disclosed. The method includes fabricating the sol-gel dielectric composition by solution processing at a...
8076222 Microcrystalline silicon thin film transistor  
Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a...
8067771 Semiconductor device and method for manufacturing the same  
A semiconductor device includes a p-type TFT having a first semiconductor layer, and an n-type TFT having a second semiconductor layer. A tilted portion, which is widened toward the insulating...
8067773 Pixel unit structure of self-illumination display with low-reflection  
A self-illumination display is provided, including a first substrate, a light-absorbing structure, a filter layer, a driving circuit unit, and a self-illumination unit. The light-absorbing...
8067770 Thin film transistor and flat panel display device including the same  
A thin film transistor includes a channel layer including an amorphous 12CaO.7Al2O3 (C12A7) and a flat panel display device including the same. According to the present invention, the amorphous...
8058703 Semiconductor transistor device and method of manufacturing the same  
A semiconductor transistor device includes a drift region, an insulating structure, a gate insulator, a gate electrode, a source, and a drain. The drift region includes a first lateral portion...
8058647 Semiconductor device and method for manufacturing the same  
An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In...
8058652 Semiconductor device used as electro-optical device having channel formation region containing first element, and source or drain region containing second element  
A semiconductor device having an island semiconductor film which is a channel formation region and a semiconductor film which is a source or drain region being in contact with a side face of the...
8058654 Display device and manufacturing method thereof  
Provided is a display device including a p-type thin film transistor formed on a substrate, in which the p-type thin film transistor includes: a gate electrode; a drain electrode; a source...
8053777 Thin film transistors for imaging system and method of making the same  
A detector including an electrode formed from a first layer of conductive material, a readout line formed from a second layer of conductive material, and a via electrically connecting the readout...
8049215 Thin film transistor  
A thin film transistor has a gate electrode; a gate insulating layer provided so as to cover the gate electrode layer; a pair of impurity semiconductor layers forming source and drain regions which...
Matches 1 - 50 out of 511 1 2 3 4 5 6 7 8 9 10 11 >