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6215154 |
Thin film transistor and method of fabricating the same
A thin film transistor (TFT) which may be used as a pixel drive element in an active matrix LCD display includes a pair of side wall spacers adjacent to the opposing side walls of its gate...
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6204518 |
SRAM cell and its fabrication process
An SRAM cell comprising, at least, two driving transistors and two transfer transistors, and two load transistors each comprised of a TFT and disposed on these transistors through a layer...
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6184541 |
Thin film transistor and method of producing the same
On the polycrystal semiconductor film 3 formed on the insulating substrate 1, the source 6 and drain 7 in LDD structure having a low concentration region 4 and a high concentration region 5 are...
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6180957 |
Thin-film semiconductor device, and display system using the same
A high-performance thin-film semiconductor device and a simple fabrication method is provided. After a silicon film is deposited at approximately or less 580° C. and at a deposition rate of at...
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6157048 |
Thin film transistors with elongated coiled electrodes, and large area devices containing such transistors
A thin film transistor has source (20) and drain (10) electrodes which each comprise a coiled elongate portion. One (14) of these portions coils inwardly to a central connector portion (12), and...
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6150671 |
Semiconductor device having high channel mobility and a high breakdown voltage for high power applications
A transistor of SiC having a drain and a highly doped substrate layer is formed on the drain. A highly n type buffer layer may optionally be formed on the substrate layer. A low doped n-type drift...
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6140668 |
Silicon structures having an absorption layer
Amorphous and polycrystalline silicon (hybrid) devices are formed close to one another employing laser crystallization and back side lithography processes. A mask (e.g., TiW) is used to protect the...
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6133620 |
Semiconductor device and process for fabricating the same
A semiconductor device comprising a thin film transistor, and a process for fabricating the same, the process comprising: a first step of forming an island-like semiconductor layer, a gate...
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6133968 |
Liquid crystal display panel
A liquid crystal display panel includes a liquid crystal interposed between the pair of substrates. One substrate has gate bus lines, drain bus lines, pixel electrodes 22 and thin film transistors....
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6133583 |
Semiconductor device and method for producing the same
A film having a high thermal conductivity material such as aluminum nitride is formed on a substrate, and then a silicon film is formed. When a laser light or an intense light corresponding to the...
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6130456 |
Thin film transistor matrix device
A thin film transistor matrix device comprises an insulating substrate, a plurality of picture element electrodes arranged in a matrix on the insulating substrate, source electrodes connected to...
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6104040 |
Liquid crystal display having a transistor with doped region in an active semiconductor layer
A semiconductor element suitable for use in the display region of a liquid crystal display or for use in the drive circuit region for driving the display region is comprised of first, second, third...
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6097037 |
Thin film transistor having a continuous crystallized layer including the channel and portions of source and drain regions
A transistor includes an MILC (metal-induced lateral crystallization) region formed on a substrate with a semiconductor material and including a channel region, and a plurality of MIC...
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6097038 |
Semiconductor device utilizing annealed semiconductor layer as channel region
There is provided a semiconductor device in which a semiconductor layer and a gate electrode are formed with a gate insulating layer between then and in which a region of the semiconductor layer...
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6093934 |
Thin film transistor having grain boundaries with segregated oxygen and halogen elements
Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation...
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6093936 |
Integrated circuit with isolation of field oxidation by noble gas implantation
A silicon semiconductor integrated circuit includes an insulative field oxidation layer which substantially does not encroach under active circuit elements of the integrated circuit. The field...
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6084247 |
Semiconductor device having a catalyst enhanced crystallized layer
Semiconductor devices such as thin-film transistors formed by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous...
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6078059 |
Fabrication of a thin film transistor and production of a liquid display apparatus
A thin film transistor includes: an insulating film having a surface; a semiconductor film formed on the surface of the insulating film; a source electrode and a drain electrode which are in...
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6064091 |
Thin film transistors having an active region composed of intrinsic and amorphous semiconducting layers
A thin film transistor (10) in an electronic device such as an active matrix display panel having an intrinsic amorphous silicon semiconductor layer (22) providing a channel region (23) between...
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6060725 |
Thin film transistor using a semiconductor film
A thin film transistor including a semiconductor film including silicon formed on an insulating surface; a channel region formed within the semiconductor film; and source and drain regions formed...
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6049091 |
High electron mobility transistor
There is provided a field effect transistor including (a) an amorphous semiconductor layer made of amorphous silicon hydride containing impurities doped therein, (b) a semiconductor layer made of...
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6043512 |
Thin film semiconductor device and method for producing the same
A thin semiconductor film device according to the present invention includes an insulative substrate, a metal layer formed on the insulative substrate, and a metal oxide layer formed on the metal...
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6033941 |
Method of forming a thin film transistor with asymmetrically arranged gate electrode and offset region
A thin film transistor which includes an oxide layer containing a trench; a semiconductor layer formed on the oxide layer, including the trench; a buffer layer formed on the semiconductor layer in...
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6031248 |
Hybrid sensor pixel architecture
A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel)...
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6028326 |
Thin film transistor including a catalytic element for promoting crystallization of a semiconductor film
A crystalline silicon thin film transistor having an LDD (lightly doped drain) structure and a process for fabricating the same, which comprises introducing a catalyst element for accelerating...
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6018166 |
Polysilicon carbon source/drain heterojunction thin-film transistor
The present invention includes forming a conductive layer on a substrate. Portions of the conductive layer are removed using a first photoresist layer as a mask. A first oxide layer is formed over...
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6013922 |
Semiconductor storage element having a channel region formed of an aggregate of spherical grains and a method of manufacturing the same
A semiconductor storage element has a source region, a drain region, and a channel region connecting the source region with the drain region, which each are formed on an insulation film of a...
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6011273 |
Thin-film semiconductor device having pressure sensitive and non-sensitive regions
The present invention provides a thin-film semiconductor device suitable for an areal-pressure-distribution detector and the like. The thin-film semiconductor device according to the present...
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5998804 |
Transistors incorporating substrates comprising liquid crystal polymers
Disclosed in this invention are transistors which contain substrates that are made of liquid crystalline polymers. Such substrates are compatible with semiconducting layers especially organic...
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5990491 |
Active matrix device utilizing light shielding means for thin film transistors
A channel forming region of a thin-film transistor is covered with an electrode and wiring line that extends from a source line. As a result, the channel forming region is prevented from being...
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5977559 |
Thin-film transistor having a catalyst element in its active regions
A thin-film transistor (TFT) which has a crystalline silicon active layer of excellent reliability and characteristics, and a method of fabricating such a TFT inexpensively are provided. In a TFT...
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5965904 |
Semiconductor device comprising silicon semiconductor layer
The principle portion of a semiconductor device is made from a polycrystalline silicon semiconductor layer which yields an X ray diffraction pattern or an electron beam pattern with the (311)...
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5962896 |
Thin film transistor including oxidized film by oxidation of the surface of a channel area semiconductor
A thin film transistor (TFT) has a substrate. There is provided on the substrate a gate electrode, a gate insulating layer, a semiconductor layer, ohmic contact layers, electrodes (i.e., a source...
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5959312 |
Sensor with doped microcrystalline silicon channel leads with bubble formation protection means
A sensor device includes a sensing element and a thin film transistor (TFT), and the TFT's channel leads include semiconductor channel leads formed in a layer of microcrystalline silicon (μc-Si)....
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5955765 |
Thin-film dual gate, common channel semiconductor device having a single first gate and a multi-gate second gate structure
An insulated-gate thin-film semiconductor device having reduced leakage current. The device has a thin-film semiconductor in which source and drain regions are formed. First and second electrodes...
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5946560 |
Transistor and method of forming the same
A crystalline silicon thin film transistor having an LDD (lightly doped drain) structure and a process for fabricating the same, which comprises introducing a catalyst element for accelerating...
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5943105 |
Liquid crystal display device having specified structure for contact hole connecting pixel electrode with source/drain electrodes via a connecting electrode
A liquid crystal display device comprises a gate signal wiring formed on a substrate, a data signal wiring insulated from the gate signal wiring and formed to perpendicularly cross the gate signal...
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5942767 |
Thin film transistors including silicide layer and multilayer conductive electrodes
Thin film transistors include a silicide layer between a doped amorphous silicon layer and source/drain electrodes. The source/drain electrodes include a first non-silicidable layer and a second...
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5932913 |
MOS transistor with controlled shallow source/drain junction, source/drain strap portions, and source/drain electrodes on field insulation layers
The invention provides an improved technique for forming a MOS transistor having lightly doped source and drain junction regions and low parasitic capacitance. The transistor includes raised source...
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5923050 |
Amorphous silicon TFT
An amorphous silicon thin-film transistor as a switching element for a thin-film transistor liquid crystal display, having improved characteristics by making better an ohmic contact layer and an...
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5903047 |
Low temperature-deposited passivation film over semiconductor device
The present invention provides a composite passivation film deposited at low temperatures (<150° C.). A hydrogenated amorphous silicon nitride (a-SiN x :H) film is formed over a semiconductor...
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5900646 |
Method of preventing deterioration of film quality of transparent conductive film a semiconductor device
A semiconductor device including an insulating layer, a patterned conductive layer on the insulating layer, a semiconductor layer on the patterned conductive layer, and a reactive layer formed by...
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5898187 |
Thin film transistor
A thin film transistor includes a substrate, a gate electrode on the substrate, an insulating layer on the gate electrode, source and drain electrodes having side surfaces facing each other over...
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5894136 |
Liquid crystal display having a bottom gate TFT switch having a wider active semiconductor layer than a conductive layer on same
A liquid crystal display includes a substrate, a gate electrode on the substrate, a gate insulating layer on the substrate and the gate electrode, a first semiconductor layer on the gate insulating...
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5889290 |
Thin film transistor and manufacturing method thereof
A thin film transistor and a simplified manufacturing method thereof, which results in enhanced charge mobility. The thin film transistor includes: a substrate; a gate electrode on said substrate;...
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5886376 |
EEPROM having coplanar on-insulator FET and control gate
An electrically erasable programmable read-only memory CEEPROM) includes a field effect transistor and a control gate spaced apart on a first insulating layer, a second insulating layer formed over...
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5883437 |
Method and apparatus for inspection and correction of wiring of electronic circuit and for manufacture thereof
A method and apparatus for inspecting wirings of an electronic circuit substrate to detect a defect in the wiring and for enabling correction thereof. The inspection method and apparatus include...
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5877512 |
Liquid crystal display device having uniform parasitic capacitance between pixels
A liquid crystal display device according to the present invention includes pixels having uniform parasitic capacitance values. Each pixel comprises at least one thin film transistor. The gate...
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5864149 |
Staggered thin film transistor with transparent electrodes and an improved ohmic contact structure
A multi-layer structure of source/drain electrodes and an amorphous silicon layer in a forward staggered thin film transistor. Source/drain electrodes are selectively provided on an insulator. Each...
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5864162 |
Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire
A thin silicon layer transistor integrated with a resistor. The resistor is self-aligned and contiguous with the transistor and is also formed of the same thin silicon layer as the transistor. This...
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