Matches 151 - 200 out of 393 < 1 2 3 4 5 6 7 8 >
Match Document Document Title
6661026 Thin film transistor substrate  
A TFT substrate includes a gate electrode and gate pad on a transparent substrate, an insulating layer on the gate electrode and exposing a portion of the gate pad, a semiconductor film on the...
6635900 Semiconductor film having a single-crystal like region with no grain boundary  
In producing a thin film transistor (TFT), an silicon oxide film is formed as an under film on a glass substrate, and then an amorphous silicon film is formed therein. A metal element which...
6603143 Semiconductor device and method for fabricating same  
A semiconductor device includes a semiconductor substrate having a trench in its surface, an insulating film in the trench, a doped conductive layer on the insulating film, a gate insulation film...
6569718 Top gate thin-film transistor and method of producing the same  
A method of producing a top gate thin-film transistor in which an insulated gate structure ( 14 ) is formed over an amorphous silicon layer with upper gate conductor ( 16 ) directly over the gate...
6566685 Double gate photo sensor array  
A photo sensor array comprises a plurality of photoelectric conversion elements separated from each other in a predetermined direction to be arranged, each photo conversion element including a...
6562645 Method of fabricating fringe field switching mode liquid crystal display  
Disclosed is a method of fabricating fringe field switching mode liquid crystal display by forming a gate bus line and a common electrode line on a lower substrate in parallel with each other;...
6541793 Thin-film transistor and semiconductor device using thin-film transistors  
In those thin-film transistors (TFTs) employing as its active layer a silicon film crystallized using a metal element, the objective is to eliminate bad affection of such metal element to the TFT...
6531858 Method for measuring drift values of an ISFET using the hydrogenated amorphous silicon as a sensing film  
A method of measuring the the drift value of an a-Si:H ISFET) has the steps of: (1) using a constant voltage/current circuit to fix the drain/source current and the drain/source voltage of the...
6531710 SOI film formed by laser annealing  
An ULSI MOSFET formed using silicon on insulator (SOI) principles includes masking regions of an amorphous silicon film on a substrate and exposing intended active regions. Laser energy is directed...
6525340 Semiconductor device with junction isolation  
A field effect transistor (FET) is disclosed. In an exemplary embodiment of the invention, the FET includes an active semiconductor region defined upon a substrate, the active semiconductor region...
6525342 Low resistance wiring in the periphery region of displays  
A display device comprises a gate metal and a data metal formed in an array region and in a periphery region outside of the array region of the display device. A planarizing layer is formed over...
6521912 Semiconductor device  
A silicon oxynitride film is manufactured using SiH 4 , N 2 O and H 2 by plasma CVD, and it is applied to the gate insulating film ( 1004 in FIG. 1 A) of a TFT. The characteristics of the...
6507072 Insulated gate field effect semiconductor device and forming method thereof  
In an insulated gate field effect semiconductor device, the gate electrode formed on the gate insulating film includes the first and second semiconductor layers as a double layer. An impurity for...
6504175 Hybrid polycrystalline and amorphous silicon structures on a shared substrate  
Amorphous and polycrystalline silicon (hybrid) devices are formed close to one another employing laser crystallization and back side lithography processes. A mask (e.g., TiW) is used to protect the...
6501094 Semiconductor device comprising a bottom gate type thin film transistor  
A semiconductor device includes a bottom gate type thin film transistor, wherein the bottom gate type thin film transistor is characterized in that a gate electrode is composed of a first layer...
6501095 Thin film transistor  
The present invention relates to a thin film transistor device, an object of the invention is to realize the thin film transistor device of high mobility by large-grain sizing (quasi single...
6495386 Method of manufacturing an active matrix device  
A method of manufacturing an active matrix device ( 10 ) comprising a row and column array of active elements wherein each element comprises a transparent pixel electrode ( 12 ) associated with a...
6489655 Integrated circuit with dynamic threshold voltage  
An integrated circuit and method for making it are described. The integrated circuit includes a first insulating layer formed on a substrate and a body strap of a first conductivity type that is...
6489631 Light-emitting matrix array display devices with light sensing elements  
A display device has an array of pixels comprising light emitting display elements, for example EL elements, carried on a substrate and associated light sensing elements responsive to light emitted...
6483124 Thin film transistors and their manufacture  
A method of manufacturing a bottom gate transistor comprises depositing a first microcrystalline silicon layer ( 40 ) over the gate insulator layer ( 22 a ) and exposing the microcrystalline...
6476416 Thin-film semiconductor apparatus, display apparatus using such semiconductor apparatus, and method of manufacturing such display apparatus  
The invention provides a thin-film semiconductor apparatus which is capable of preventing wiring formed in the thin-film semiconductor apparatus from incurring inter-layer short-circuit otherwise...
6472754 Semiconductor device with improved arrangements to avoid breakage of tungsten interconnector  
The object of the invention is to provide such a highly reliable semiconductor device as no defect such as the breakage of a tungsten conductor occurs. This object is achieved by the following...
6448612 Pixel thin film transistor and a driver circuit for driving the pixel thin film transistor  
An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 Å,...
6445051 Method and system for providing contacts with greater tolerance for misalignment in a flash memory  
A method and system for providing a plurality of contacts in a flash memory device is disclosed. The flash memory device includes a plurality of gate stacks and a plurality of field insulating...
6436818 Semiconductor structure having a doped conductive layer  
Methods and apparatus for forming word line stacks comprise one, or a combination of the following: a silicon diffusion barrier layer, doped with oxygen or nitrogen, coupled between a bottom...
6437368 Thin film transistor  
An Ta film for use in forming a source electrode and a drain electrode and an amorphous silicon film for use in forming an amorphous silicon semiconductor layer with impurity are continuously...
6433362 Semiconductor device with insulating and transparent original substrate  
The invention concerns an integrated circuit or chip comprising an original support and active and passive microscopic functional elements present in a thin layer made of a monocrystalline...
6414783 Method of transferring semiconductors  
A display panel is formed using essentially single crystal thin-film material that is transferred to substrates for display fabrication. The transfer includes the step of transferring the...
6399959 Thin film transistor with reduced metal impurities  
A structure for forming thin film transistor with reduced metal impurities. The structure at least includes the following steps. First of all, an insulation substrate. Then, an insulating gettering...
6388270 Semiconductor device and process for producing same  
To provide a semiconductor device utilizing a semiconductor film having a high crystallinity by a production process having a high mass productivity. Upon crystallizing an amorphous silicon film ...
6376860 Semiconductor device  
One kind or plural kinds of elements selected from a groups III, IV or V elements are introduced in an amorphous silicon film, and then crystallized by heating at 600° C. or less. The...
6372592 Self-aligned MOSFET with electrically active mask  
A method for making a self-aligned FET with an electrically active mask comprises the steps of forming a semiconductor layer on an insulating substrate, forming an electrically nonconductive oxide...
6368976 Method for manufacturing a semiconductor device having film thickness difference between a control gate and a floating gate  
A semiconductor device has a floating gate having a side wall with a generally vertical upper section and a tapered lower section and a first insulation film formed on the side wall of the floating...
6346716 Semiconductor material having particular oxygen concentration and semiconductor device comprising the same  
A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal...
6335541 Semiconductor thin film transistor with crystal orientation  
A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of...
6335543 Polycrystalline silicon thin film transistor and manufacturing method thereof  
The present invention discloses a polycrystalline silicon thin film transistor connected to a gate line and a data line, including a source electrode contacting the data line; a gate electrode...
6329673 Liquid-crystal display apparatus, transistor, and display apparatus  
When a driving circuit for a liquid-crystal display apparatus, especially a switching section and an input-voltage conversion circuit for an analog operation, is formed of circuit devices having...
6326641 Liquid crystal display device having a high aperture ratio  
A liquid crystal display device includes first and second gate lines, first and second data lines intersecting said first and second gate lines, an insulating film covering said gate lines, and a...
6323034 Amorphous TFT process  
A thin film transistor design is described which is not subject to either dark or photo current leakage. The process to manufacture this device begins with the formation of a gate electrode on a...
6310363 Thin-film transistor and semiconductor device using thin-film transistors with N and P impurities in the source and drain regions  
In those thin-film transistors (TFTs) employing as its active layer a silicon film crystallized using a metal element, the objective is to eliminate bad affection of such metal element to the TFT...
6285068 Antifuses and method of fabricating the same  
The present invention provides antifuses that enhance the efficiency of a field programmable gate array and that decrease chip size. The antifuses comprise a plurality of first conductive layers...
6281138 System and method for forming a uniform thin gate oxide layer  
This invention includes a novel synthesis of a three-step process of growing, depositing and growing SiO 2 under low pressure, e.g., 0.2-10 Torr, to generate high quality, robust and reliable gate...
6274884 Thin film transistors for liquid crystal displays  
The amorphous silicon layer overlaps the gate electrode and the edges of the amorphous silicon layer are substantially encompassed by the edges of the gate electrode. The distance between the edges...
6265249 Method of manufacturing thin film transistors  
An additional high quality insulating layer is grown over the substrate after the formation of the gate electrode of a thin film transistor (TFT). The growth temperature of the insulating layer can...
6252247 Thin film transistor, a method for producing the thin film transistor, and a liquid crystal display using a TFT array substrate  
A thin film transistor (TFT) device including a first electrode including at least one of a gate, a source and a drain formed on a transparent insulating substrate, an insulating film layer...
6252249 Semiconductor device having crystalline silicon clusters  
A semiconductor device having a plurality of crystalline silicon clusters. The semiconductor device is formed on an insulating surface and includes crystalline silicon clusters anchored with each...
6242758 Semiconductor device employing resinous material, method of fabricating the same and electrooptical device  
A pair of substrates forming the active matrix liquid crystal display are fabricated from resinous substrates having transparency and flexibility. A thin-film transistor has a semiconductor film...
6243155 Electronic display device having an active matrix display panel  
A display device using a novel semiconductor device, which includes a pixel matrix, an image sensor, and a peripheral circuit for driving those, that is, which has both a camera function and a...
6239452 Self-aligned silicide gate technology for advanced deep submicron MOS device  
A deep submicron MOS device having a self-aligned silicide gate structure and a method for forming the same is provided so as to overcome the problems of poly-Si depletion and boron penetration. A...
6229156 Inverted thin film transistor having a trapezoidal-shaped protective layer  
A thin film transistor of the present invention is composed of a transparent insulating substrate, a gate electrode formed on the transparent insulating substrate, a gate insulating film formed on...
Matches 151 - 200 out of 393 < 1 2 3 4 5 6 7 8 >