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8008746 Semiconductor device  
An n+-emitter layer arranged under an emitter electrode is formed of convex portions arranged at predetermined intervals and a main body coupled to the convex portions. A convex portion region is...
7800428 Semiconductor device and method for controlling a semiconductor device  
Semiconductor devices and methods are disclosed wherein a switching element or a current path is coupled to a substrate, and wherein a further element is coupled to said substrate and a control...
7714389 Semiconductor device having two bipolar transistors constituting electrostatic protective element  
A semiconductor device includes a pair of transistors formed in a first conductive type semiconductor substrate. Each of the transistors contains a collector region of a second conductive type,...
7601990 Method and apparatus for electrostatic discharge protection having a stable breakdown voltage and low snapback voltage  
Electrostatic discharge (ESD) protection is provided for an integrated circuit. Snap back from a lower initial critical voltage and critical current is provided, as compared to contemporary...
7323750 Bipolar transistor and semiconductor device using same  
A bipolar transistor is provided, which is low in collector-to-emitter saturation voltage, small in size and to be manufactured by a reduced number of processes, and a semiconductor device formed...
7061074 Visible imaging device using Darlington phototransistors  
The present invention is a modified darlington phototransistor wherein a phototransistor is coupled to a Bipolar Junction Transistor (BJT). This design provides a high sensitivity and a fast...
7045877 Semiconductor protection device  
The invention is directed to improve resistance to destruction of a semiconductor device. A protection circuit having a plurality of bipolar transistors which are Darlington connected between...
6969904 Trimming pattern  
There is provided a trimming pattern enabling trimming to be implemented with ease and time required for trimming to be shortened without causing damage to internal elements. The invention provides...
6949802 ESD protection structure  
The invention describes structures and a process for providing ESD protection between multiple power supply lines or buses on an integrated circuit chip. Special diode strings are used for the...
6933588 High performance SCR-like BJT ESD protection structure  
In a NPN transistor electrostatic discharge (ESD) protection structure, certain parameters, including maximum lattice temperature, are improved by introducing certain process changes to provide for...
6809400 Composite pinin collector structure for heterojunction bipolar transistors  
This disclosure describes a structure for transistor devices formed from compound semiconductor materials; and particularly for heterojuntion bipolar transistors (HBTs); and more particularly for...
6794730 High performance PNP bipolar device fully compatible with CMOS process  
A pnp bipolar junction transistor is formed with improved emitter efficiency by reducing the depth of the p well implant to increase carrier concentration in the emitter and making the emitter...
6348724 Semiconductor device with ESD protection  
The invention relates to a bipolar ESD protection comprising a protection transistor with a short-circuited base emitter (18, 19). Due to the snap-back effect, the transistor can switch from the...
6329698 Forming a self-aligned epitaxial base bipolar transistor  
An improved method and an apparatus for forming a self-aligned epitaxial base bipolar transistor in a semiconductor material is disclosed. The method of the invention involves forming an intrinsic...
6300669 Semiconductor integrated circuit device and method of designing same  
A semiconductor integrated circuit device comprises a multiple-stage amplifier including a plurality of transistors. The multiple-stage amplifier has a first stage comprising a plurality of bipolar...
6281530 LPNP utilizing base ballast resistor  
A lateral PNP transistor (LPNP) (102) having the low resistance base buried N+ region (114) removed from below the emitter region (118). This leaves a high resistance n-well (116) below the...
6084263 Power device having high breakdown voltage and method of manufacturing the same  
The main characteristic feature of the invention is to prevent a leakage current from flowing when a planar type semiconductor device having a high breakdown voltage is reverse-biased. For example,...
6046492 Semiconductor temperature sensor and the method of producing the same  
A semiconductor temperature sensor comprises independent current sources and bipolar transistors connected to form a Darlington circuit. The bipolar transistors have electrodes each connected to...
5969399 High gain current mode photo-sensor  
A high gain photodetector requiring a substantially silicon area than prior art photodetectors having the same gain. The photodetector includes a light converter for converting a light signal to a...
5804861 Electrostatic discharge protection in integrated circuits, systems and methods  
An integrated circuit has a semiconductor die with a substrate and at least first and second bond pads. An internal circuit is fabricated on the semiconductor die and connected to the first bond...
5629551 Semiconductor device comprising an over-temperature detection element for detecting excessive temperatures amplifiers  
A semiconductor device includes on a semiconductor substrate an output transistor which is composed of a collector region, a first base region and a first emitter region, and a temperature...
5541439 Layout for a high voltage darlington pair  
There is disclosed a layout of a high voltage Darlington pair in which a circular field plate is utilized for both high voltage transistors in order to reduce the layout area. In this layout, both...
5525826 Integrated vertical bipolar and vertical MOSFET transistors  
An integrated structure is described, that comprises a vertical bipolar transistor and a vertical MOSFET transistor, where, in order to reduce the series resistance of the MOSFET transistor, the...
5449949 Monolithic integrated semiconductor device  
A monolithic integrated semiconductor is proposed, in which on the main surface of a monolithically integrated n-p-n transistor or p-n-p transistor, a cover electrode (D1) is mounted for internal...
5410177 Planar semiconductor and Zener diode device with channel stopper region  
A planar semiconductor device having a heavily doped channel stopper region of the first conductivity type and at least the following components: a Zener diode having the following regions, seen...
5397913 Biopolar/Darlington transistor having enhanced comprehensive electricity characteristics  
A Darlington transistor having improved comprehensive electric characteristic and a bipolar transistor having improved high voltage characteristic are obtained. A collector resistivity ρN- (F) of ...
5227657 Base-emitter reverse bias protection for BICMOS IC  
Emitter-base protection for a first bipolar transistor formed as part of a BiCMOS circuit. A second bipolar transistor is formed in the same well as the first bipolar transistor with both...
5172209 Integral Bi-CMOS logic circuit  
An integral Bi-CMOS logic circuit includes a pair of first transistors and a pair of second transistors. The pair of the first transistors includes a P-type MOS transistor receiving an input signal...
5083182 Darlington device with an ultra-lightweight emitter speed-up transistor  
The emitter region of a speed-up transistor is created in a base of a final transistor of a Darlington device and has a relatively low dopant concentration and small thickness.
5072268 MOS gated bipolar transistor  
A high voltage transistor includes a substrate of a first conductivity type. Within the substrate is a well region of a second conductivity type. A source region is within the substrate and adjoins...
4931666 Darlington-connected semiconductor device  
A Darlington-connected transistor circuit includes a drive stage transistor and an output stage transistor embodied in a semiconductor substrate having first and second elements in which the drive...
4918494 Thin film transistor  
A thin film transistor which includes an insulative substrate, and a gate electrode, a gate insulating film, a semi-conductor film, a source electrode, and a drain electrode, which are all...
4905069 Darlington transistor arrangement  
In the particular embodiment described in the specification, a Darlington transistor arrangement has a stepped upper surface with an emitter terminal of the preceding transistor disposed at the...
4897705 Lateral bipolar transistor for logic circuit  
A semiconductor integrated circuit device comprises a lateral pnp transistor having a base to which an input signal is applied and a first npn transistor having a base to which a potential...
4755694 Integrated circuit Darlington transistor power stage incorporating various circuit components integrated on the same substrate  
An integrated anode power stage using one or more Darlington transistors combinations is constituted for currents exceeding 5 amperes and voltages exceeding 200 volts. On a common semiconductor...
4656496 Power transistor emitter ballasting  
A power transistor structure that is well suited to both switching and lower-voltage linear applications is displayed. A key element of the design is thin-film ballast resistors that act as a...
4642668 Semiconductor device having improved thermal characteristics  
The thermal behavior of a semiconductor body is considerably improved by giving parts of high and equal dissipation the same surface area and situating these regions so that the edge of the...
4446478 Assembly in a single case of a main power-switching semiconductor component and a destorage diode  
In the pressure association of a main component such as a Darlington transistor or an amplifying gate thyristor and a storage diode, a specific destorage diode comprising an annular junction. Thus,...
4374364 Darlington amplifier with excess-current protection  
A Darlington amplifier comprising an auxiliary transistor (16) for overload protection. The base of the auxiliary transistor is connected to a tapping (17) provided on a resistor (12) included...
4317128 Two transistor switch  
A Darlington transistor switch with a first and a second transistor, in which the base electrode of the first transistor is connected to the emitter electrode of the second transistor. In order to...
4204130 Multicollector transistor logic circuit  
Disclosed is an integrated transistor logic circuit (ITL) comprising complementary bipolar transistors. A PNP transistor injects current into the base of an NPN transistor when this current is not...
4168999 Method for forming oxide isolated integrated injection logic semiconductor structures having minimal encroachment utilizing special masking techniques  
A process for fabricating integrated injection logic structures including both vertical and lateral bipolar transistors in oxide isolated pockets of silicon includes the steps of forming a...
4078244 Semiconductor device  
A semiconductor device having two transistors which have a common collector.The device is characterized in that the distance between the two base zones is such that during operation of the device...
4063273 Fundamental logic circuit  
A logic circuit has the individual elements arranged in a semiconductor layer. The elements are in the form of field effect transistors having a multiple gate and bipolar transistors having a...
4013904 Darlington transistor switching circuit for reactive load  
A Darlington transistor circuit for switching a reactive load is disclosed. The input transistor is selected to have a sustaining or breakover voltage appreciably less than the output transistor...
3999080 Transistor coupled logic circuit  
A TTL logic circuit employing single emitter PNP input transistors instead of a multi-emitter input stage, in order to reduce loading on input drive devices. The circuit features a logic swing of...
3995308 Photosensitive Darlington device and process of fabricating same  
Photo-Darlington devices having a response within a narrow range of current output for a certain illumination level are produced by initially providing each device with a light-admitting opening of...
3813588 EFFICIENT POWER DARLINGTON DEVICE CONFIGURATION  
An efficient integrated circuit power Darlington device having first and second rows of emitter subregions. The power Darlington device is substantially elongated, and an elongated collector...
3810006 CURRENT COMPARING DEVICE  
A digital output current comparing device comprises two sets of transistors of opposed types, the emitters and bases of the transistors of each set being in common. Two currents to be compared are...
3783308 FLIP-FLOP ELEMENT  
Flip-flop circuits are defined by bipolar elements including multiple emitter transistors, Schottky diodes and multiple emitter Schottky transistors configured to operate with a supply voltage of...
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