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7633139 Semiconductor diode device with lateral transistor  
The invention is directed to a semiconductor device having a diode element which prevents a leakage current due to a vertical parasitic bipolar transistor and enhances current efficiency. An...
7622790 Transistor assembly and method for manufacturing same  
A transistor assembly having a transistor includes a plurality of transistor regions, each of which has a vertical transistor structure having a collector semiconductor region, a base semiconductor...
7566947 Semiconductor device with bipolar transistor and method of fabricating the same  
Disclosed is a semiconductor device with a bipolar transistor and method of fabricating the same. The device may include a collector region in a semiconductor substrate. A base pattern may be...
7531888 Integrated latch-up free insulated gate bipolar transistor  
A lateral Insulated Gate Bipolar Transistor (LIGBT) includes a semiconductor substrate and an anode region in the semiconductor substrate. A cathode region of a first conductivity type in the...
7459766 Semiconductor bipolar transistor  
A semiconductor device including a bipolar transistor in which the collector resistance. The bipolar transistor includes a first conduction type semiconductor substrate having a main surface. A...
7422952 Method of forming a BJT with ESD self protection  
A ballasting region is placed between the base region and the collector contact of a bipolar junction transistor to relocate a hot spot away from the collector contact of the transistor. Relocating...
7342293 Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same  
The present invention relates to bipolar junction transistors (BJTS). The collector region of each BJT is located in a semiconductor substrate surface and adjacent to a first shallow trench...
7329925 Device for electrostatic discharge protection  
A device for electrostatic discharge (ESD) protection is disclosed. The device for electrostatic discharge protection includes a lateral bipolar transistor and a diode. The semiconductor transistor...
7297607 Device and method of performing a seasoning process for a semiconductor device manufacturing apparatus  
A method of performing a seasoning process for a semiconductor device processing apparatus is provided by the present invention. The method includes: forming a material layer on a test wafer;...
7265018 Method to build self-aligned NPN in advanced BiCMOS technology  
The present invention provides a method of forming a self-aligned heterobipolar transistor (HBT) device in a BiCMOS technology. The method includes forming a raised extrinsic base structure by...
7262443 Silicide uniformity for lateral bipolar transistors  
Method and apparatus for forming a semiconductor device. The method includes defining a plurality of rows in a semiconductor layer. Thereafter, on one or more of the plurality of rows, one or more...
7247926 High-frequency switching transistor  
A high-frequency switching transistor comprises a collector area, which has a first conductivity type, a first barrier area bordering on the collector area, which has a second conductivity type...
7221036 BJT with ESD self protection  
A ballasting region is placed between the base region and the collector contact of a bipolar junction transistor to relocate a hot spot away from the collector contact of the transistor. Relocating...
7217975 Lateral type semiconductor device  
A lateral semiconductor device includes: a semiconductor substrate formed on a base region therein; a plurality of emitter regions with a triangle arrangement in an upper part of the base layer and...
7173274 Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology  
A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor...
7173320 High performance lateral bipolar transistor  
A lateral bipolar transistor includes an emitter region, a base region, a collector region, and a gate disposed over the base region. A bias line is connected to the gate for applying a bias...
7144785 Method of forming isolation trench with spacer formation  
A strained silicon semiconductor arrangement with a shallow trench isolation (STI) structure has a strained silicon (Si) layer formed on a silicon germanium (SiGe) layer. A trench extends through...
7145206 MOS field effect transistor with reduced parasitic substrate conduction  
A MOS field effect transistor includes an auxiliary diffusion formed in the drain region where the auxiliary diffusion has a conductivity type opposite to the drain region and is electrically...
7098113 Method and system for providing a power lateral PNP transistor using a buried power buss  
A power lateral PNP device is disclosed which includes an epitaxial layer; a first and second collector region embedded in the epitaxial layer; an emitter region between the first and second...
7075156 Collector structure for electrostatic discharge protection circuits  
Electrostatic discharge (ESD) devices for protection of integrated circuits are described. ESD devices may be configured to provide uniform breakdown of finger regions extending through a first...
7067898 Semiconductor device having a self-aligned base contact and narrow emitter  
A semiconductor structure having a self-aligned base contact and an emitter, where the base contact is electrically isolated from the emitter by a dielectric layer. The separation between the base...
7067899 Semiconductor integrated circuit device  
A semiconductor integrated circuit device according to the invention includes an N-type embedded diffusion region between a substrate and a first epitaxial layer in island regions serving as small...
7045830 High-voltage diodes formed in advanced power integrated circuit devices  
A diode-connected lateral transistor on a substrate of a first conductivity type includes a vertical parasitic transistor through which a parasitic substrate leakage current flows. Means for...
7038249 Horizontal current bipolar transistor and fabrication method  
A bipolar transistor structure for use in integrated circuits where the active device is processed on the sidewall of an n-hill so that the surface footprint does not depend on the desired area of...
6995453 High voltage integrated circuit including bipolar transistor within high voltage island area  
In a high voltage integrated circuit, a low voltage region is separated from a high voltage region by a junction termination. A bipolar transistor in the high voltage region is surrounded by an...
6982473 Bipolar transistor  
At a surface region of an N − -type base region, surrounded by a P-type isolation region, a P + -type collector region, a P + -type emitter region, an N + -type base contact region, and an N-type...
6903386 Transistor with means for providing a non-silicon-based emitter  
A transistor includes a means for providing a non-silicon-based emitter with a flexible structure to relieve lattice mis-match between the emitter and the base.
6894328 Self-aligned bipolar transistor having recessed spacers and method for fabricating same  
According to one exemplary embodiment, a bipolar transistor includes a base having a top surface. The bipolar transistor further includes a first link spacer and a second link spacer situated on...
6894366 Bipolar junction transistor with a counterdoped collector region  
An improved BJT is described that maximizes both Bvceo and Ft/Fmax for optimum performance. Scattering centers are introduced in the collector region ( 80 ) of the BJT to improve Bvceo. The...
6867477 High gain bipolar transistor  
According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor might be a lateral PNP bipolar transistor and the base may comprise, for...
6864538 Protection device against electrostatic discharges  
An ESD protection device encompassing a vertical bipolar transistor that is connected as a diode and has an additional displaced base area. The assemblage has a space-saving configuration and a...
6828644 Semiconductor device with reduced parasitic capacitance between impurity diffusion regions  
A first layer is formed on an underlying substrate having a surface layer made of semiconductor of a first conductivity type. The first layer is made of semiconductor having a resistance higher...
6798040 Power semiconductor switch  
An IGBT structure includes successive regions whose conductivities have alternating signs. The structure is dimensioned for punch-through and is provided with two buffer layers. As a result, the...
6777781 Base-to-substrate leakage cancellation  
The operating temperature range for a vertical PNP transistor can be extended by applying cancellation techniques. The vertical PNP generates a first leakage current from the base-collector region....
6770951 P-type LDMOS device with buried layer to solve punch-through problems and process for its manufacture  
P-type LDMOS devices have been difficult to integrate with N-type LDMOS devices without adding an extra mask because the former have been unable to achieve the same breakdown voltage as the latter...
6770953 Bipolar transistor  
A bipolar transistor is provided in which the product of base-collector capacitance and collector resistance can be reduced through a layout optimization, which leads to an improvement of the...
6768183 Semiconductor device having bipolar transistors  
An NPN bipolar transistor and a PNP bipolar transistor are formed in a semiconductor substrate. The NPN bipolar transistor has a p type emitter region, a p type collector region and an n type base...
6753592 Multi-technology complementary bipolar output using polysilicon emitter and buried power buss with low temperature processing  
A dual polysilicon emitter, complementary output is provided which utilizes a buried power buss. While providing these advantages, the process is not complicated. The process has the speed...
6730981 Bipolar transistor with inclined epitaxial layer  
In an element formation region, a surface of an N − epitaxial layer is inclined upward from an end of a field oxide film to a sidewall of an opening. An external base diffusion layer at the...
6724066 High breakdown voltage transistor and method  
An integrated circuit that includes a high breakdown voltage bipolar transistor. The bipolar transistor includes an emitter 36, a base 32, and a collector structure. The emitter 36 is...
6677624 Carbon nanotubes transistor  
Transistor, is disclosed, including a base having a bundle of (n,n) nanotubes, and an emitter and a collector connected to opposite sides of the base each having (n,m, n−m≠3 l) nanotubes,...
6674148 Lateral components in power semiconductor devices  
A method for adjusting the gain or the sensitivity of a lateral component formed in the front surface of a semiconductor wafer, having a first conductivity type, includes not doping or overdoping,...
6674144 Process for forming damascene-type isolation structure for integrated circuit  
Isolation of a heterojunction bipolar transistor device in an integrated circuit is accomplished by forming the device within a trench in dielectric material overlying single crystal silicon....
6657279 PNP lateral bipolar electronic device and corresponding manufacturing process  
The invention relates to a process for making a lateral PNP bipolar electronic device integrated monolithically on a semiconductor substrate together with other bipolar devices of the NPN type,...
6653714 Lateral bipolar transistor  
A lateral bipolar transistor includes: a substrate; a first insulative region formed on the substrate; a first semiconductor region of a first conductivity type selectively formed on the first...
6611044 Lateral bipolar transistor and method of making same  
A lateral bipolar transistor for an intergrated circuit is provided that maintains a high current gain and high frequency capability without sacrificing high Early voltage. More particularly, a...
6603186 Bipolar transistor with base drive circuit protection  
An n+ type emitter region and a p-type base region are formed in contact with one main surface of an n-type collector region, a p-type cathode region is formed in a ring shape in contact with the...
6580108 Insulated gate bipolar transistor decreasing the gate resistance  
An insulated gate transistor comprising a first semiconductor region, a second semiconductor region includes plural portions, a third semiconductor region, a fourth semiconductor region, a first...
6570240 Semiconductor device having a lateral bipolar transistor and method of manufacturing same  
In order to form a semiconductor device including a lateral bipolar transistor which is a match in the device performance for a vertical bipolar transistor, an electrically conductive film which is...
6551869 Lateral PNP and method of manufacture  
A lateral PNP is disclosed in which a substrate of a first conductivity type is used. On top of the substrate a buried region of a second conductivity type is formed. A lightly doped collector...
Matches 1 - 50 out of 223 1 2 3 4 5 >