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8183659 Integrated circuits having interconnects and heat dissipators based on nanostructures  
The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are...
8164092 PIN structures including intrinsic gallium arsenide, devices incorporating the same, and related methods  
Provided herein are PIN structures including a layer of amorphous n-type silicon, a layer of intrinsic GaAs disposed over the layer of amorphous n-type silicon, and a layer of amorphous p-type...
8154024 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film  
An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior...
8044445 Photoelectric conversion device and method of manufacturing the same  
A photoelectric conversion device includes a thin film transistor that is placed on a substrate, a photodiode that is connected to a drain electrode of the thin film transistor and includes an...
8026535 Thin film transistor and organic electroluminescence display using the same  
In a thin film transistor, a semiconductor layer containing Si and Ge is applied, a Ge concentration of this semiconductor layer is high at the side of the insulating substrate, and crystalline...
8013424 Semiconductor device and method of fabricating the same  
A semiconductor device according to an embodiment includes: a semiconductor substrate; a gate electrode formed on the semiconductor substrate via a gate insulating film; a channel region formed in...
7999250 Silicon-germanium-carbon semiconductor structure  
In accordance with one or more embodiments, a semiconductor structure includes a semiconductor substrate, a first semiconductor material over the semiconductor substrate, and a second semiconductor...
7993947 Silicon/germanium oxide particle inks, inkjet printing and processes for doping semiconductor substrates  
Highly uniform silica nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silican particles can be surface modified to form the dispersions. The...
7973384 Phase change memory cell including multiple phase change material portions  
A memory cell includes a first electrode, a second electrode, and a first portion of phase-change material contacting the first electrode. The memory cell includes a second portion of phase-change...
7960646 Silicon-based thin-film photoelectric converter and method of manufacturing the same  
In order to improve photoelectric conversion properties of a silicon-based thin-film photoelectric converter to which a conductive SiOx layer is inserted to obtain an optical confinement effect,...
7956361 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film  
An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior...
7935582 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film  
An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior...
7915520 Photoelectric conversion device and manufacturing method thereof  
A photoelectric conversion device comprising: a pin-type photoelectric conversion layer constituted of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer,...
7884354 Germanium on insulator (GOI) semiconductor substrates  
Germanium on insulator (GOI) semiconductor substrates are generally described. In one example, a GOI semiconductor substrate comprises a semiconductor substrate comprising an insulative surface...
7872259 Light-emitting device  
An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and...
7863518 Photovoltaic device  
A photovoltaic device capable of improving output characteristics is provided. This photovoltaic device comprises a crystalline semiconductor member, a substantially intrinsic first amorphous...
7855127 Method for manufacturing semiconductor substrate  
A method for manufacturing a semiconductor substrate including: epitaxially growing a silicon germanium (SiGe) film on a silicon (Si) substrate by a chemical vapor deposition method; subjecting a...
7855384 SIC semiconductor device and method for manufacturing the same  
A SiC semiconductor device includes: a SiC substrate having a drain layer, a drift layer and a source layer stacked in this order; multiple trenches penetrating the source layer and reaching the...
7847180 Nanostructure and photovoltaic cell implementing same  
A photovoltaic nanostructure according to one embodiment of the present invention includes an electrically conductive nanocable coupled to a first electrode, a second electrode extending along at...
7791106 Gallium nitride material structures including substrates and methods associated with the same  
Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The...
7791074 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film  
An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior...
7777291 Integrated circuits having interconnects and heat dissipators based on nanostructures  
The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are...
7750338 Dual-SiGe epitaxy for MOS devices  
A semiconductor includes a semiconductor substrate, a gate stack on the semiconductor substrate, and a stressor having at least a portion in the semiconductor substrate and adjacent to the gate...
7741639 Multi-chambered excimer or molecular fluorine gas discharge laser fluorine injection control  
A multi-chambered excimer or molecular halogen gas discharge laser system comprising at least one oscillator chamber and at least one amplifier chamber producing oscillator output laser light...
7693360 Optoelectronic hybrid integrated module and light input/output apparatus having the same as component  
On the back surface of a transparent plate having a light extracting part for outputting lights to the outside, an electrode for wiring, and an electrode for an electromagnetic shield, an optical...
7525131 Photoelectric surface and photodetector  
Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride...
7518212 Graded GexSe100-x concentration in PCRAM  
The present invention provides a design for a PCRAM element which incorporates multiple metal-containing germanium-selenide glass layers of diverse stoichiometries. The present invention also...
7492988 Ultra-compact planar AWG circuits and systems  
Planar AWG circuits and systems are disclosed that use air trench bends to increase planar circuit compactness.
7482616 Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same  
In one embodiment, a phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a...
7420207 Photo-detecting device and related method of formation  
A photo-detecting device includes a buried doping layer of a first conductivity type and disposed at an upper portion of a silicon substrate. A first silicon epitaxial layer of first conductivity...
7361420 Structure, magnetic recording medium, and method of producing the same  
To provide a filmy structure of a nanometer size having a phase-separated structure effective for the case where a compound can be formed between two kinds of materials. A structure constituted by...
7335950 Semiconductor device and method of making thereof  
To provide a thin film transistor having a low OFF characteristic and to provide P-channel type and N-channel type thin film transistors where a difference in characteristics of the P-channel type...
7303949 High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture  
A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. A SiGe layer is selectively grown in the source and...
7271333 Apparatus and method of production of thin film photovoltaic modules  
The present invention relates to light-weight thin-film photovoltaic cells, methods for making cells, modules made from cells, and methods for making modules from cells. The invention teaches a...
7214971 Semiconductor light-receiving device  
A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a...
7202511 Near-infrared visible light photon counter  
Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1–2 microns by coupling an absorber layer having high quantum efficiency in the spectral r...
7176504 SiGe MOSFET with an erosion preventing Six1Gey1 layer  
A semiconductor device is provided. The semiconductor device comprises a substrate, a gate structure, a spacer, a SixGey layer and a SixGey protection layer. The gate structure is deposited on the...
7164150 Photovoltaic device and manufacturing method thereof  
In a photovoltaic device of the present invention, junction characteristics are improved by enhancing interface characteristics between a crystalline silicon semiconductor and an amorphous silicon...
7157349 Method of manufacturing a semiconductor device with field isolation regions consisting of grooves filled with isolation material  
A method of manufacturing a semiconductor device comprising a silicon body (1) having a surface (4) provided with field isolation regions (2) enclosing active regions (3). In this method, on the...
7138668 Heterojunction diode with reduced leakage current  
An aspect of the present invention provides a semiconductor device that includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity...
7015507 Thin film transistor and method of fabricating the same  
Provided is a non-single-crystal germanium thin film transistor having a gate insulating film capable of reducing the interface state density between an active layer and the gate insulating film....
6960789 Layout of a thin film transistor and the forming method thereof  
A transistor that at least has one of the following characteristics: First, the gate electrode is located outside the gate line, such that the whole transistor is located outside the gate line....
6951689 Substrate with transparent conductive layer, and photovoltaic element  
The present invention provides a substrate with a transparent conductive layer comprising at least one layer stacked on a supporting substrate, wherein the surface of the transparent conductive...
6940089 Semiconductor device structure  
A method of fabricating a semiconductor structure. According to one aspect of the invention, on a first semiconductor substrate, a first compositionally graded Si1-xGex buffer is deposited where...
6921914 Process for producing semiconductor article using graded epitaxial growth  
A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si1-xGex (x increases from 0 to y) is deposited on a first silicon substrate, followed by...
6872972 Method for forming silicon film with changing grain size by thermal process  
Roughly described, a silicon layer transitions from polysilicon at one surface to amorphous silicon at the opposite surface. The transition can be monotonic, and can be either continuous or it can...
6856002 Graded GexSe100-x concentration in PCRAM  
The present invention provides a design for a PCRAM element which incorporates multiple metal-containing germanium-selenide glass layers of diverse stoichiometries. The present invention also...
6838695 CMOS device structure with improved PFET gate electrode  
A semiconductor device structure includes a substrate, a dielectric layer disposed on the substrate, first and second stacks disposed on the dielectric layer. The first stack includes a first...
6787793 Strained Si device with first SiGe layer with higher Ge concentration being relaxed to have substantially same lattice constant as second SiGe layer with lower Ge concentration  
A semiconductor device comprises a first Si1−αGeα film, a first cap film, a second Si1−βGeβ film (β<α≦1) and a second cap film formed in this order on a substrate whose surface is formed of s...
6759712 Semiconductor-on-insulator thin film transistor constructions  
The invention includes SOI thin film transistor constructions, memory devices, computer systems, and methods of forming various structures, devices and systems. The structures typically comprise a...
Matches 1 - 50 out of 198 1 2 3 4 >