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8183633 Semiconductor device and method for forming the same  
Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the...
8169059 On-chip RF shields with through substrate conductors  
Structures of a system on chip and methods of forming a system on chip are disclosed. In one embodiment, the system on a chip includes an RF component disposed on a first part of a substrate, a...
8138575 Integrated circuit including a reverse current complex  
An integrated circuit and a production method is disclosed. One embodiment forms reverse-current complexes in a semiconductor well, so that the charge carriers, forming a damaging reverse current,...
8129817 Reducing high-frequency signal loss in substrates  
An integrated circuit structure includes a semiconductor substrate of a first conductivity type; and a depletion region in the semiconductor substrate. A deep well region is substantially enclosed...
8093676 Semiconductor component including an edge termination having a trench and method for producing  
A semiconductor component includes a semiconductor body having a first side, a second side, an edge delimiting the semiconductor body in a lateral direction, an inner region and an edge region. A...
8084844 Semiconductor device  
A semiconductor device in which potential is uniformly controlled and in which the influence of noise is reduced. A p-type well region is formed beneath a surface of a p-type Si substrate. n-type...
8084843 N well implants to separate blocks in a flash memory device  
A semiconductor memory device that has an isolated area formed from one conductivity and formed in part by a buried layer of a second conductivity that is implanted in a substrate. The walls of the...
8049286 Semiconductor device and semiconductor device manufacturing method  
In the present invention, there is provided a semiconductor device including: element isolation regions formed in a state of being buried in a semiconductor substrate such that an element formation...
8030654 Thin film transistor and method of manufacturing the same  
A thin film transistor comprising a gate electrode, a gate insulating layer, an active layer, and source and drain electrodes is provided. The gate electrode overlaps with a channel region of the...
7944021 Semiconductor device with suppressed hump characteristic  
A semiconductor device includes an element isolation film formed on a semiconductor substrate surface of one conductivity type, a gate electrode having one pair of end portions located on a...
7888775 Vertical diode using silicon formed by selective epitaxial growth  
Some embodiments relate to an apparatus that exhibits vertical diode activity to occur between a semiconductive body and an epitaxial film that is disposed over a doping region of the...
7884426 Layout design method of semiconductor integrated circuit having well supplied with potential different from substrate potential  
Design time (TAT) is reduced in a layout design of a semiconductor integrated circuit having a well supplied with a potential different from a substrate potential. A layout design method of the...
7883946 Angled implantation for deep submicron device optimization  
A method for forming a submicron device includes depositing a hard mask over a first region that includes a polysilicon well of a first dopant type and a gate of a second dopant type and a second...
7859905 Semiconductor storage device and method of manufacturing the same  
A method of manufacturing a semiconductor storage device according to an embodiment of the present invention includes forming dummy cells 611, to 618 at a position adjacent to a reference cell 412,...
7851889 MOSFET device including a source with alternating P-type and N-type regions  
Apparatus and methods are provided for fabricating semiconductor devices with reduced bipolar effects. One apparatus includes a semiconductor body (120) including a surface and a transistor source...
7851285 Non-volatile memory device and method for fabricating the same  
A method for fabricating a non-volatile memory device includes forming a charge tunneling layer composed of a hafnium silicate (HfSixOyNz) layer on a semiconductor substrate. A charge trapping...
7763542 Semiconductor memory device and method of fabricating the same  
A semiconductor memory device includes a semiconductor substrate. An inter-layer dielectric is disposed on the semiconductor substrate. A bit line is disposed on the inter-layer dielectric. A bit...
7763955 Reducing shunt currents in a semiconductor body  
A description is given of a concept for reducing shunt currents in a semiconductor body.
7723799 Semiconductor device  
A semiconductor device includes a P-substrate, an N-well disposed in the P-substrate, an NMOS transistor disposed in the P-substrate and having one of a source and a drain connected to a ground...
7696592 Solid state imaging apparatus method for fabricating the same and camera using the same  
A solid state imaging apparatus includes a plurality of photoelectric conversion sections formed in an imaging area of a silicon substrate, and an embedded layer embedded in an isolation trench...
7675120 Integrated circuit having a multipurpose resistor for suppression of a parasitic transistor or other purposes  
A composite integrated circuit incorporating two LDMOSFETs of unlike designs, with the consequent creation of a parasitic transistor. A multipurpose resistor is integrally built into the composite...
7649238 Semiconductor device  
In a PMOS transistor, the source-drain region is divided into four parts along the gate width and has an arrangement of four independent source regions and an arrangement of four independent drain...
7608913 Noise isolation between circuit blocks in an integrated circuit chip  
An integrated circuit includes a p-well block region having a high resistivity due to low doping concentration formed in a region of a substrate for providing noise isolation between a first...
7560797 Semiconductor device and manufacturing method of the same  
In a semiconductor device of the present invention, two epitaxial layers are formed on a P type single crystal silicon substrate. One of the epitaxial layers has an impurity concentration higher...
7491964 Nitridation of STI fill oxide to prevent the loss of STI fill oxide during manufacturing process  
A method and structure for an improved shallow trench isolation (STI) structure for a semiconductor device. The STI structure incorporates an oxynitride top layer of the STI fill. Optionally, the...
7443009 N well implants to separate blocks in a flash memory device  
A semiconductor memory device that has an isolated area formed from one conductivity and formed in part by a buried layer of a second conductivity that is implanted in a substrate. The walls of the...
7420260 Power semiconductor device for suppressing substrate recirculation current and method of fabricating power semiconductor device  
A power semiconductor device has a first region in which a transistor is formed, a third region in which a control element is formed, and a second region for separating the first region and the...
7414295 Transistor and method of operating transistor  
A transistor in which a physical property of its channel is changed according to an applied voltage, and methods of manufacturing and operating the same are provided. The transistor may include a...
7411271 Complementary metal-oxide-semiconductor field effect transistor  
A complementary metal-oxide-semiconductor field effect transistor (CMOSFET) is provided. The CMOSFET includes a substrate of a first conductivity type, a first epitaxial layer, a well, a second...
7402885 LOCOS on SOI and HOT semiconductor device and method for manufacturing  
One or more local oxidation of silicon (LOCOS) regions may be formed that apply compressive strain to a channel of a field-effect transistor such as a P-type field-effect transistor (PFET) or other...
7385275 Shallow trench isolation method for shielding trapped charge in a semiconductor device  
A semiconductor structure and associated method for forming the semiconductor structure. The semiconductor structure comprises a first field effect transistor (FET), a second FET, and a shallow...
7301219 Electrically erasable programmable read only memory (EEPROM) cell and method for making the same  
An asymmetrically doped memory cell has first and second N+ doped junctions on a P substrate. A composite charge trapping layer is disposed over the P substrate and between the first and the second...
7193293 Semiconductor component with a compensation layer, a depletion zone, and a complementary depletion zone, circuit configuration with the semiconductor component, and method of doping the compensation layer of the semiconductor component  
A semiconductor component, which functions according to the principle of charge carrier compensation, has incompletely ionized dopants that are additionally provided in a semiconductor body of the...
7064414 Heater for annealing trapped charge in a semiconductor device  
A structure and associated method for annealing a trapped charge from a semiconductor device. The semiconductor structure comprises a substrate and a first heating element. The substrate comprises...
6972476 Diode and diode string structure  
A diode structure is provided. The diode structure comprises a first conductive type substrate, a second conductive type first well region, a first conductive type second well region, a second...
6972475 Semiconductor device  
A semiconductor device includes an N channel MOS transistor. The N channel MOS transistor includes a first P type buried layer that isolates an N epitaxial region on a P type substrate (P-SUB) from...
6900518 Semiconductor device  
A power semiconductor device has an active region that includes a drift region. At least a portion of the drift region is provided in a membrane which has opposed top and bottom surfaces. In one...
6800925 Integrated circuit configuration having a structure for reducing a minority charge carrier current  
An integrated circuit configuration includes a semiconductor body having a first semiconductor zone of a first conductivity type in a region near a rear side and a second semiconductor zone of the...
6756280 Semiconductor device and a process for producing same  
In a semiconductor device having a junction type diode using a bipolar transistor and a process for producing the same, a ratio of a diode electric current to a leakage electric current is...
6639294 Semiconductor device having a device formation region protected from a counterelectromotive force  
A semiconductor device includes an epitaxial layer formed on a P type silicon substrate; a P+ diffusion layer for dividing the epitaxial layer into an N− epi layer, which constitutes a device f...
6593601 Integrated circuit device that can suppress undesired inter-device effects  
When forming first and second circuits on a semiconductor substrate, an isolation region is provided between the first and second circuits by embedding a conductor in the semiconductor substrate....
6590261 Electrostatic discharge protection structure  
An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure of the present invention uses a resistance capacitance (RC) circuit to distinguish an overshoot...
6586292 Guard mesh for noise isolation in highly integrated circuits  
A methodology of creating integrated circuits with improved noise isolation is presented. The circuitry of an integrated circuits is separated into noise generating circuit blocks and noise...
6563159 Substrate of semiconductor integrated circuit  
Provided is a substrate of a semiconductor integrated circuit which can easily manufacture an integrated circuit having a soft error resistance, a latch up resistance and an ESD resistance...
6563181 High frequency signal isolation in a semiconductor device  
A semiconductor device (20) includes an isolated p-well (22) formed in a substrate (21) by a buried n-well (25) and an n-well ring (24). The n-well ring (24) extends from a surface of the...
6559515 Insulating wall between power components  
An insulating wall of a second conductivity type intended for separating elementary components formed in different wells of a semiconductive layer of a first conductivity type, a component located...
6528884 Conformal atomic liner layer in an integrated circuit interconnect  
A manufacturing method, and an integrated circuit resulting therefrom has a substrate with a semiconductor device thereon. A channel dielectric layer is deposited over the device and has an opening...
6512251 Semiconductor switching element that blocks in both directions  
The semiconductor switching element blocks in both directions between a first and a second load terminal. The switching element has a field effect transistor and a bipolar transistor. The field...
6504212 Method and apparatus for enhanced SOI passgate operations  
A method and apparatus are provided for implementing enhanced silicon-on-insulator (SOI) passgate operations. The apparatus for implementing enhanced silicon-on-insulator (SOI) passgate operations...
6504230 Compensation component and method for fabricating the compensation component  
A compensating component and a method for the production thereof are described. Compensating regions are produced by implanting sulfur or selenium in a p-conductive semiconductor layer or, are...
Matches 1 - 50 out of 166 1 2 3 4 >