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7608913 Noise isolation between circuit blocks in an integrated circuit chip  
An integrated circuit includes a p-well block region having a high resistivity due to low doping concentration formed in a region of a substrate for providing noise isolation between a first...
7560797 Semiconductor device and manufacturing method of the same  
In a semiconductor device of the present invention, two epitaxial layers are formed on a P type single crystal silicon substrate. One of the epitaxial layers has an impurity concentration higher...
7491964 Nitridation of STI fill oxide to prevent the loss of STI fill oxide during manufacturing process  
A method and structure for an improved shallow trench isolation (STI) structure for a semiconductor device. The STI structure incorporates an oxynitride top layer of the STI fill. Optionally, the...
7443009 N well implants to separate blocks in a flash memory device  
A semiconductor memory device that has an isolated area formed from one conductivity and formed in part by a buried layer of a second conductivity that is implanted in a substrate. The walls of the...
7420260 Power semiconductor device for suppressing substrate recirculation current and method of fabricating power semiconductor device  
A power semiconductor device has a first region in which a transistor is formed, a third region in which a control element is formed, and a second region for separating the first region and the...
7414295 Transistor and method of operating transistor  
A transistor in which a physical property of its channel is changed according to an applied voltage, and methods of manufacturing and operating the same are provided. The transistor may include a...
7411271 Complementary metal-oxide-semiconductor field effect transistor  
A complementary metal-oxide-semiconductor field effect transistor (CMOSFET) is provided. The CMOSFET includes a substrate of a first conductivity type, a first epitaxial layer, a well, a second...
7402885 LOCOS on SOI and HOT semiconductor device and method for manufacturing  
One or more local oxidation of silicon (LOCOS) regions may be formed that apply compressive strain to a channel of a field-effect transistor such as a P-type field-effect transistor (PFET) or other...
7385275 Shallow trench isolation method for shielding trapped charge in a semiconductor device  
A semiconductor structure and associated method for forming the semiconductor structure. The semiconductor structure comprises a first field effect transistor (FET), a second FET, and a shallow...
7301219 Electrically erasable programmable read only memory (EEPROM) cell and method for making the same  
An asymmetrically doped memory cell has first and second N+ doped junctions on a P substrate. A composite charge trapping layer is disposed over the P substrate and between the first and the second...
7193293 Semiconductor component with a compensation layer, a depletion zone, and a complementary depletion zone, circuit configuration with the semiconductor component, and method of doping the compensation layer of the semiconductor component  
A semiconductor component, which functions according to the principle of charge carrier compensation, has incompletely ionized dopants that are additionally provided in a semiconductor body of the...
7064414 Heater for annealing trapped charge in a semiconductor device  
A structure and associated method for annealing a trapped charge from a semiconductor device. The semiconductor structure comprises a substrate and a first heating element. The substrate comprises...
6972476 Diode and diode string structure  
A diode structure is provided. The diode structure comprises a first conductive type substrate, a second conductive type first well region, a first conductive type second well region, a second...
6972475 Semiconductor device  
A semiconductor device includes an N channel MOS transistor. The N channel MOS transistor includes a first P type buried layer that isolates an N epitaxial region on a P type substrate (P-SUB) from...
6909150 Mixed signal integrated circuit with improved isolation  
An integrated circuit having improved isolation includes a first circuit section formed in a substrate and a second circuit section formed in the substrate, the second circuit section being spaced...
6900518 Semiconductor device  
A power semiconductor device has an active region that includes a drift region. At least a portion of the drift region is provided in a membrane which has opposed top and bottom surfaces. In one...
6800925 Integrated circuit configuration having a structure for reducing a minority charge carrier current  
An integrated circuit configuration includes a semiconductor body having a first semiconductor zone of a first conductivity type in a region near a rear side and a second semiconductor zone of the...
6756280 Semiconductor device and a process for producing same  
In a semiconductor device having a junction type diode using a bipolar transistor and a process for producing the same, a ratio of a diode electric current to a leakage electric current is...
6639294 Semiconductor device having a device formation region protected from a counterelectromotive force  
A semiconductor device includes an epitaxial layer formed on a P type silicon substrate; a P+ diffusion layer for dividing the epitaxial layer into an N− epi layer, which constitutes a device...
6593601 Integrated circuit device that can suppress undesired inter-device effects  
When forming first and second circuits on a semiconductor substrate, an isolation region is provided between the first and second circuits by embedding a conductor in the semiconductor substrate....
6590261 Electrostatic discharge protection structure  
An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure of the present invention uses a resistance capacitance (RC) circuit to distinguish an overshoot...
6586292 Guard mesh for noise isolation in highly integrated circuits  
A methodology of creating integrated circuits with improved noise isolation is presented. The circuitry of an integrated circuits is separated into noise generating circuit blocks and noise...
6563181 High frequency signal isolation in a semiconductor device  
A semiconductor device ( 20 ) includes an isolated p-well ( 22 ) formed in a substrate ( 21 ) by a buried n-well ( 25 ) and an n-well ring ( 24 ). The n-well ring ( 24 ) extends from a surface of...
6563159 Substrate of semiconductor integrated circuit  
Provided is a substrate of a semiconductor integrated circuit which can easily manufacture an integrated circuit having a soft error resistance, a latch up resistance and an ESD resistance...
6559515 Insulating wall between power components  
An insulating wall of a second conductivity type intended for separating elementary components formed in different wells of a semiconductive layer of a first conductivity type, a component located...
6528884 Conformal atomic liner layer in an integrated circuit interconnect  
A manufacturing method, and an integrated circuit resulting therefrom has a substrate with a semiconductor device thereon. A channel dielectric layer is deposited over the device and has an opening...
6512251 Semiconductor switching element that blocks in both directions  
The semiconductor switching element blocks in both directions between a first and a second load terminal. The switching element has a field effect transistor and a bipolar transistor. The field...
6504230 Compensation component and method for fabricating the compensation component  
A compensating component and a method for the production thereof are described. Compensating regions are produced by implanting sulfur or selenium in a p-conductive semiconductor layer or, are...
6504212 Method and apparatus for enhanced SOI passgate operations  
A method and apparatus are provided for implementing enhanced silicon-on-insulator (SOI) passgate operations. The apparatus for implementing enhanced silicon-on-insulator (SOI) passgate operations...
6445057 Semiconductor device having a trimming circuit for suppressing leakage current  
In a semiconductor device having a junction type diode using a bipolar transistor and a process for producing the same, a ratio of a diode electric current to a leakage electric current is...
6384453 High withstand voltage diode and method for manufacturing same  
A high withstand voltage diode for protecting a high-voltage transistor has a first region 2 of a second conductivity type formed on the substrate of a first conductivity type, a...
6307239 CMOS sense structure having silicon dioxide outer ring around sense region  
A CMOS structure having a silicon dioxide outer ring around the sense region. The CMOS sense structure has a substrate, a n - region, a n + region, an isolation region, a field implant region and...
6307230 Transistor having an improved sidewall gate structure and method of construction  
A transistor having an improved sidewall gate structure and method of construction is provided. The improved sidewall gate structure may include a semiconductor substrate (12) having a channel...
6262451 Electrode structure for transistors, non-volatile memories and the like  
An electrode structure for semiconductor devices includes first electrode material positioned in overlying relationship to the surface of a substrate so as to define a first side wall perpendicular...
6259139 Embedded well diode MOS ESD protection circuit  
The present invention is related to a MOS ESD protection circuit with embedded well diodes. The proposed protection circuit comprises following basic components: a well locates in a substrate; some...
6252257 Isolating wall between power components  
The present invention relates to an isolating wall for separating elementary components formed in different wells, a component located in at least one of the wells being capable of operating with a...
6194776 Semiconductor circuit device having triple-well structure in semiconductor substrate, method of fabricating the same, and mask device for fabrication of the same  
A semiconductor circuit device having a triple-well structure wherein a predetermined potential level is supplied to a top well without a contact region formed in the top well is disclosed. In an...
6188116 Structure of a polysilicon plug  
A structure of a polysilicon via that includes a semiconductor substrate, a conducting layer on the substrate, a dielectric layer on the conducting layer, a polysilicon plug formed in the...
6166415 Semiconductor device with improved noise resistivity  
A dummy pattern that is inserted to stabilize the form of a transistor active region is implanted with an impurity of the same conductivity type as a well, and the impurity-doped region of the...
6157073 Isolation between power supplies of an analog-digital circuit  
The present invention relates to a composite integrated circuit including at least one well that separates analog and digital blocks of the circuit, this well being connected to a first terminal of...
6060762 Integrated structure with reduced injection of current between homologous regions  
An integrated semiconductor structure comprises two homologous P-type regions formed within an N-type epitaxial layer. A P-type region formed in the portion of the epitaxial layer disposed between...
6060758 Method and device for suppressing parasitic effects in a junction-isolation integrated circuit  
A suppression method is applied to an integrated circuit formed on a substrate of p-type material having at least one region of n-type material with junction isolation, a first electrical contact...
6023092 Semiconductor resistor for withstanding high voltages  
A resistor on a semiconductor wafer comprising a silicon substrate, a first doped layer in a predetermined area on the silicon substrate, a second doped layer within a predetermined area of the...
5977606 Dielectric isolated high voltage semiconductor device  
A dielectric isolated high voltage semiconductor device having an arrangement for extending a depletion layer of a main junction beyond an insulating layer containing an island to a semiconductor...
5973366 High voltage integrated circuit  
A high voltage integrated circuit is provided which includes a first conductivity type semiconductor substrate, a first conductivity type isolation region that extends continuously from the first...
5912495 High voltage driver circuit with diode  
The invention relates to a structure for and the method of manufacturing a driver circuit for an inductive load monolithically integrated on a semiconductor substrate doped with a first type of...
5907163 Self-biased moat for parasitic current suppression in integrated circuits  
A substrate (10) of a semiconductor device includes a power section (12) and a control section (14). The power section includes doped regions (16, 18, 20) and terminals (22, 24, 26) which define...
5900652 Apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices  
A method and apparatus for the localized reduction of the lifetime of charge carriers in integrated electronic devices. The method comprises the step of implanting ions, at a high dosage and at a...
5892268 Inductive load driving and control circuits inside isolation regions  
A semiconductor device includes a power transistor group and a signal circuit on the same substrate. The substrate is grounded at an isolation region at an end of the substrate adjacent to the...
5861656 High voltage integrated circuit  
The invention relates to a high voltage integrated circuit with connecting metal conductors (30, 32) connected to ground or potential near ground and covered by a passivating layer (18). The...
Matches 1 - 50 out of 145 1 2 3 >