Matches 101 - 145 out of 145 < 1 2 3
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4887142 Monolithically integrated semiconductor device containing bipolar junction transistors, CMOS and DMOS transistors and low leakage diodes and a method for its fabrication  
Disclosed is a monolithic integrated semiconductor device which may contain specimens of seven different circuit components; namely: lateral N-MOS and lateral P-MOS transistors (CMOS), vertical...
4887141 Saturation limiting system for a vertical, isolated collector PNP transistor and monolithically integrated structure thereof  
The structure of a vertical PNP transistor with isolated collector is modified by forming a P-type diffusion outside the perimeter of a sinker collector diffusion to form an auxiliary collector...
4864379 Bipolar transistor with field shields  
A bipolar transistor includes a substrate of semiconductor material having an expitaxial body of the semiconductor material on a surface thereof. The semiconductor body has a major surface. A...
4829360 Monolithic integrated semiconductor means to reduce power dissipation of a parasitic transistor  
A semiconductor means is integrated monolithically on a substrate and comprises at least one power diode (3), its cathode being at a higher potential (6) than the potential (5) of the substrate....
4812891 Bipolar lateral pass-transistor for CMOS circuits  
A bipolar lateral pass-transistor is disclosed for use in MOS integrated circuits. The transistor includes a semiconductor substrate of a first conductivity type covered by an epitaxial layer, a...
4807009 Lateral transistor  
In a lateral transistor having a first semiconductor region of one conductivity type, and an emitter region and a collector region both having the opposite conductivity type and disposed in the...
4803526 Schottky gate field effect transistor and manufacturing method  
In a GaAs field effect transistor of the invention, a gate layer is formed on a semi-insulative substrate. The gate layer is made of a conductive material forming a Schottky junction between the...
4786961 Bipolar transistor with transient suppressor  
An integrated circuit includes a substrate of one conductivity type silicon and an epitaxial layer of the opposite conductivity type silicon on a surface of the substrate. An emitter region of the...
4694321 Semiconductor device having bipolar transistor and integrated injection logic  
A semiconductor integrated circuit device incorporating bipolar transistors and IILs comprises respective buried layers in a substrate and active regions. A buried layer formed in the IIL region...
4652900 NPN transistor with P/N closed loop in contact with collector electrode  
A semiconductor device capable of suppressing the influence of a parasitic pnp transistor caused when an npn transistor operates in saturation range in such a way that a p-type impurity region is...
4641171 Monolithically integrated semiconductor power device  
A monolithic semiconductor device including an integrated control circuit and a pair of power transistors in a Darlington configuration integrated in the same chip solves the problem of ON-OFF...
4581547 Integrated circuit that eliminates latch-up and analog signal error due to current injected from the substrate  
A method is disclosed for eliminating latch-up and analog signal errors in power circuits having a vertical output transistor structure wherein a P-type chip substrate serves as a collector of a...
4561096 Buried semiconductor laser avoiding thyristor action  
In order to prevent the output characteristic of a semiconductor laser from being saturated at higher temperatures due to the thyristor effect of a combination of the semiconductor layers thereof,...
4520448 Method of characterizing reliability in bipolar semiconductor devices  
This invention concerns a method of characterizing the reliability in bipolar semiconductor devices having reliability detracting leakage current due to a parasitic FET transistor between the...
4496849 Power transistor protection from substrate injection  
A PN junction-isolated bipolar integrated circuit having a power transistor protected from delay in turn-off by a parasitic substrate injection. Protection is obtained by interposing an additional...
4466011 Device for protection against leakage currents in integrated circuits  
In a bipolar integrated circuit, wherein the elementary components are formed in islands of an N-type epitaxial layer surrounded by P-type isolation walls, a protection against leakage currents is...
4303932 Lateral transistor free of parisitics  
For the sake of an increased operational security and a reduction of substrate currents of an intergrated semiconductor circuit with a lateral transistor and a pn insulation, a protective zone...
4276556 Semiconductor device  
A semiconductor device including a diode and a bipolar transistor which are connected to each other and formed in an isolated area of a semiconductor layer has a diffused region formed between a...
4246594 Low crosstalk type switching matrix of monolithic semiconductor device  
The switching matrix with a plurality of individual lateral type PNPN type switching elements is disposed on a one chip silicon. The chip includes a double layered substrate having a thin P type...
4211941 Integrated circuitry including low-leakage capacitance  
An integrated-circuit MOS capacitor has a first doped semiconductive region forming one of its plates. This first semiconductor region is electrically isolated from the semiconductor substrate by a...
4117507 Diode formed in integrated-circuit structure  
An IC chip with a substrate 10 of one conductivity type (P), overlain by an epitaxially grown layer 12 of the opposite conductivity type (N), includes a diode formed in part by a region 16 of that...
4082571 Process for suppressing parasitic components utilizing ion implantation prior to epitaxial deposition  
A process for suppressing parasitic components, in particular parasitic diodes and transistors, in integrated circuits which have, in particular, inversely operated transistors, in which a...
T969010 Monolithically integrated semiconductor structure containing at least two devices in a common zone and technique for preventing parasitic transistor action  
to prevent a parasitic lateral transistor or thyristor effect in an integrated structure including a transistor and a further device sharing one common zone, a doped region which is more highly...
4027325 Integrated full wave diode bridge rectifier  
A full wave rectifying junction-diode bridge rectifier is formed in an integrated silicon circuit. One of the two bridge output terminals is ohmically connected to the bulk doped silicon body so...
4014718 Method of making integrated circuits free from the formation of a parasitic PNPN thyristor  
In order to prevent the formation of a parasitic PNPN thyristor in an integrated circuit having at least one NPN transistor, a layer of semiconductor material of a conductivity type opposite that...
3999215 Integrated semiconductor device comprising multi-layer circuit element and short-circuit means  
An integrated circuit having multi-layer transistors which are separated from each other by means of tub-shaped or dish-shaped isolation zones. The isolation zones are of a conductivity type...
3992232 Method of manufacturing semiconductor device having oxide isolation structure and guard ring  
In a method of manufacturing a semiconductor device, wherein an element forming a region of one conductivity type isolated by an oxide layer is disposed on a semiconductor substrate of the opposite...
3990092 Resistance element for semiconductor integrated circuit  
A semiconductor integrated circuit contains a resistance element, wherein a low resistance region of a first conductivity type, employed for a circuit resistance, is formed within a high resistance...
3987478 Composite type semiconductor and preparation thereof  
A composite type semiconductor is disclosed which comprises a semiconductor substrate having one conductive type. A plurality of semiconductor elements are formed by selective diffusion on a first...
3931634 Junction-isolated monolithic integrated circuit device with means for preventing parasitic transistor action  
A junction-isolated monolithic integrated circuit device has its component elements connected in a circuit configuration such that at least one of the isolation PN junctions may be forward-biased...
3890634 Transistor circuit  
A lateral region detects the saturation condition and provides overflow negative feedback or a trigger preparation voltage.
3878551 Semiconductor integrated circuits having improved electrical isolation characteristics  
Semiconductor integrated circuits having improved electrical isolation characteristics include a monocrystalline semiconductor substrate and a layer of epitaxial semiconductor material overlying at...
3869321 METHOD FOR FABRICATING PRECISION LAYER SILICON-OVER-OXIDE SEMICONDUCTOR STRUCTURE  
Semiconductor structure having a support structure with a layer of single crystal material carried by the support structure and a layer of epitaxially grown single crystal semiconductor material...
3812521 BONDING PAD SUBSTRUCTURE FOR INTEGRATED CIRCUITS  
A bonding pad substructure in a semiconductor device prevents injection of minority carriers into the substrate during negative overvoltages applied to the bonding pad. An N-type isolated region is...
3742317 SCHOTTKY BARRIER DIODE  
Anisotropic etching is employed in the fabrication of a Schottky barrier diode to provide a recessed geometry having a guard ring of reduced area, thereby avoiding the objectionable degree of...
3697784 SEMICONDUCTOR INTEGRATED CIRCUITS  
An integrated circuit eliminates the feedback effect of spurious signals between a push-pull transistor pair in separate islands and a third transistor in a third island by locating the third...
3676714 SEMICONDUCTOR DEVICE  
A p-n junction isolated integrated circuit bipolar transistor with means to prevent parasitic transistor action between the base of the transistor and the substrate due to accidental forward bias...
3653988 METHOD OF FORMING MONOLITHIC SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES  
This method of fabricating junction-isolated semiconductor integrated circuit devices eliminates the photolithographic masking operation associated with a base diffusion by performing a...
3649887 AC LINE OPERATION OF MONOLITHIC CIRCUIT  
An integrated circuit chip is disclosed which can be coupled directly to and operated from a source of AC potential. To prevent conduction between the substrate and epitaxial layer of the chip...
3648128 AN INTEGRATED COMPLEMENTARY TRANSISTOR CIRCUIT CHIP WITH POLYCRYSTALLINE CONTACT TO BURIED COLLECTOR REGIONS  
An integrated semiconductor device having a monocrystalline semiconductor substrate of one conductivity type, a diffused layer in the substrate of the opposite conductivity type, a vapor deposited...
3590345 DOUBLE WALL PN JUNCTION ISOLATION FOR MONOLITHIC INTEGRATED CIRCUIT COMPONENTS  
Described is a system for electrically isolating discrete components of a monolithic integrated circuit one from the other by a pair of spaced diffused walls of the same conductivity type as the...
3582727 HIGH VOLTAGE INTEGRATED CIRCUIT INCLUDING AN INVERSION CHANNEL  
A body of semiconductor material has an isolation region of P-type conductivity which surrounds a plurality of zones of N-type conductivity. An insulating layer is disposed on the surface of the...
3395320 Isolation technique for integrated circuit structure  
3341755 Switching transistor structure and method of making the same  
3564434 Title is not available  
Matches 101 - 145 out of 145 < 1 2 3