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7525131 |
Photoelectric surface and photodetector
Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride...
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7492988 |
Ultra-compact planar AWG circuits and systems
Planar AWG circuits and systems are disclosed that use air trench bends to increase planar circuit compactness.
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RE39780 |
Photoelectric converter, its driving method, and system including the photoelectric converter
A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric...
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7214971 |
Semiconductor light-receiving device
A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a...
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7202511 |
Near-infrared visible light photon counter
Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1–2 microns by coupling an absorber layer having high quantum efficiency in the spectral...
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7115925 |
Image sensor and pixel having an optimized floating diffusion
An active pixel includes a a photosensitive element formed in a semiconductor substrate. A transfer transistor is formed between the photosensitive element and a floating diffusion and selectively...
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7102185 |
Lightshield architecture for interline transfer image sensors
An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a...
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6984843 |
Board for electronic device, electronic device, ferroelectric memory, electronic apparatus, ink-jet recording head, and ink-jet printer
A board for an electronic device is provide comprising a substrate having an amorphous layer, a buffer layer formed on the amorphous layer, the buffer layer having an orientation at least in the...
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6929987 |
Microelectronic device fabrication method
In a method of forming a semiconductor device with a first channel layer formed over a portion of a second channel layer, a portion of the second channel underlying the first channel is etched so...
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6774451 |
Mos transistor for high density integration circuits
This invention relates to a MOS transistor made in the thin film of silicon of an SOI chip ( 10 ), said thin film ( 13 ) being slightly doped and of less than 30 nm in thickness, the source ( 14 )...
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6670657 |
Integrated circuit having photodiode device and associated fabrication process
An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench...
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6503771 |
Semiconductor photoelectrically sensitive device
A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate...
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6426542 |
Schottky diode with dielectric trench
An improved diode or rectifier structure and method of fabrication is disclosed involving the incorporation in a Schottky rectifier, or the like, of a dielectric filled isolation trench structure...
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6346716 |
Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal...
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6215154 |
Thin film transistor and method of fabricating the same
A thin film transistor (TFT) which may be used as a pixel drive element in an active matrix LCD display includes a pair of side wall spacers adjacent to the opposing side walls of its gate...
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6093660 |
Inductively coupled plasma chemical vapor deposition technology
Disclosed is an inductively coupled plasma chemical vapor deposition method for depositing a selected thin film on a substrate from inductively coupled plasma, the method including the steps of:...
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6080997 |
Electromagnetic-wave detector
An electromagnetic-wave detector having an electromagnetic-wave detection unit having the structure that M (M≥1) contiguous pairs of a metallic layer and an insulating layer are provided at the...
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6037644 |
Semi-transparent monitor detector for surface emitting light emitting devices
A structure for providing direct feedback of power emitted by a surface emitting light emitting device and the subsequent optical power control of the device is disclosed. In a preferred...
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5973335 |
Semiconductor memory devices with amorphous silicon alloy
A semiconductor memory device includes first and second conductive contact layers (12, 15) and an hydrogenated, silicon-rich, amorphous silicon alloy layer (14), particularly an amorphous silicon...
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5942049 |
Increasing stabilized performance of amorphous silicon based devices produced by highly hydrogen diluted lower temperature plasma deposition
High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma...
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5821558 |
Antifuse structures
An antifuse structure includes a first electrode, a layer of enhanced amorphous silicon over the first electrode, and a second electrode over the layer of enhanced amorphous silicon. The layer of...
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5814832 |
Electron emitting semiconductor device
An electron emitting semiconductor device is provided with a P-type semiconductor layer arranged on a semiconductor substrate having an impurity concentration. A Schottky barrier electrode is...
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5562781 |
Amorphous, hydrogenated carbon (a-C:H) photovoltaic cell
A photovoltaic cell comprising a plurality of film layers, at least one of the layers being a semiconductor film of amorphous, hydrogenated carbon. The preferred embodiment comprises a plurality of...
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5543634 |
Method of forming semiconductor materials and barriers
In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are...
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5521400 |
Semiconductor photoelectrically sensitive device with low sodium concentration
A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate...
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5449924 |
Photodiode having a Schottky barrier formed on the lower metallic electrode
A photodiode capable of obtaining a sufficient photo current/dark ratio at both a forward bias state and a reverse bias state. The photodiode includes a glass substrate, an aluminum film formed as...
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5449923 |
Amorphous silicon color detector
An amorphous silicon color detector comprising a structure composed of a transparent conductive oxide film (TCO) layer/an a-Si:H layer/a metal layer, of which the a-Si:H layer is an amorphous...
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5442205 |
Semiconductor heterostructure devices with strained semiconductor layers
A heterostructure includes a stained epitaxial layer of either silicon or germanium that is located overlying a silicon substrate, with a spatially graded Ge x Si 1 -x epitaxial layer overlain by...
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5336905 |
Semiconductor device having an insulating substrate and Schottky diodes
Semiconductor device and method of manufacturing same, display device and support plate for same provided with such a semiconductor device. A semiconductor device having an insulating substrate on...
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5301048 |
Active matrix display device with Schottky contact switching elements
By arranging a Schottky diode so that it is sensitive to grazing light only in the back-bias mode, a switching element is obtained which, when used in, for example an active matrix LCD display, has...
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5138191 |
Photoemitter
A junction, such as a Schottky junction, is formed between a conductive electrode and a semiconductor. A bias voltage is applied between the conductive electrode and an outward-emission-side...
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5083171 |
Image sensor
In an image sensor, photoelectric transducers each consisting of a pair of a photodiode and a blocking diode, each of which has a semiconductor layer of an amorphous silicon thin film and two...
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4999693 |
Photoelectric conversion device with a high response speed
An improved photoelectric conversion device is shown. The device includes a plurality of photoelectric semiconductor elements each of which are composed of a first electrode and a semiconductor...
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4990988 |
Laterally stacked Schottky diodes for infrared sensor applications
Laterally stacked Schottky diodes (25) for infrared sensor applications are fabricated utilizing porous silicon (10) having pores (12). A Schottky metal contact (24) is formed in the pores, such as...
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4982246 |
Schottky photodiode with silicide layer
A Schottky photodiode formed by the method including the steps of: forming a base electrode on the principal substrate surface; depositing a layer of N+ amorphous silicon on the base electrode;...
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4977304 |
Linear solid state image sensor
A linear solid-state image sensor includes a first chip and a second chip, each of the first and second chips having a long substrate, a plural number of photo-responsive elements formed in a line...
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4965655 |
Interconnected semiconductor devices
Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating...
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4965212 |
Optical sensor
A photosensitive diode element and method of manufacture. The diode element is comprised of a first layer of n-type hydrogenated amorphous-silicon forming a cathode, and a second layer of p+ type...
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4937651 |
Semiconductor device free from the current leakage through a semiconductor layer and method for manufacturing same
An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to...
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4896200 |
Novel semiconductor-based radiation detector
A semiconductor-based radiation detector comprising a semiconductor substrate and an amorphous semiconductor layer formed on one surface of the substrate, one electrode being applied to the...
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4891074 |
Multiple cell photoresponsive amorphous alloys and devices
The production of improved multiple cell photoresponsive amorphous devices, such as photovoltaic, photoreceptive devices and the like; having improved wavelength threshold characteristics is made...
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4876585 |
Contact type image sensor with separate charge transfer device
An image sensor includes a charge transfer device such as CCD and BBD which is utilized as a switching element for reading signals. In the case where the charge transfer device is formed on a...
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4845375 |
Contact photoelectric conversion apparatus having plurality of protecting layers
A photoelectric conversion apparatus comprises an insulating and transparent substrate, a plurality of photoelectric conversion elements formed on the substrate in a line, selection switches made...
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4837177 |
Method of making bipolar semiconductor device having a conductive recombination layer
A semiconductor device having a conductive recombination layer. The conductive recombination layer, comprised of doped polycrystalline material, doped polycrystalline material and tungsten...
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4829353 |
Photoelectric converting device
A photoelectric converting device in which a photoelectric converting part is covered directly with a passivation film made of a silicone resin. The passivation film is made by directly applying on...
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4826777 |
Making a photoresponsive array
An array for sensing the relative intensity of electromagnetic radiation at a plurality of locations employs a network of photodiodes and non-photoresponsive diodes. A first terminal of each...
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4811069 |
Photoelectric conversion device
A photoelectric conversion device comprises a photodiode comprising a metallic electrode formed of a metal capable of forming a Schottky junction together with amorphous silicon, such as Cr or Ni,...
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4785191 |
Interconnected array of photosensors for simultaneously sensing light intensities at each of a number of locations
An array for sensing the relative intensity of electromagnetic radiation at a plurality of locations employs a network of photodiodes and non-photoresponsive diodes. A first terminal of each...
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4732873 |
Method of fabrication of non-linear control elements for a flat electrooptical display screen
In a method of fabrication of non-linear control elements for a flat display screen of the liquid crystal type, successive layers of n 30 doped amorphous semiconductor, of undoped amorphous...
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4703336 |
Photodetection and current control devices
A photodetection device and a current control device, both including means responsive to the intensity of incident radiation for providing an output signal corresponding thereto. The responsive...
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