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7622731 |
Cross-point memory array
A circuit comprises a bulk silicon integrated circuit (IC). A first metallization layer is arranged adjacent to said bulk silicon IC. Phase change memory (PCM) is arranged adjacent to said first...
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7616089 |
Compensation of field effect on polycrystalline resistors
A resistive circuit includes a first terminal and a second terminal and polycrystalline first and second resistive segments coupled between the first and second terminals. A third terminal A is...
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7615844 |
Semiconductor device
A semiconductor device is provided that includes: a base insulating film; a metal thin-film resistor that is provided on the base insulating film; a lower-layer insulating film that is formed under...
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7615805 |
Versatile system for optimizing current gain in bipolar transistor structures
Disclosed are apparatus and methods for designing electrical contact for a bipolar emitter structure. The area of an emitter structure ( 106, 306, 400, 404 ) and the required current density...
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7612429 |
Chip resistor, process for producing the same, and frame for use therein
A chip resistor (A 1 ) comprises a first insulation layer ( 2 A) covering the regions between a plurality of electrodes ( 3 ) on a rear surface ( 10 a ) of a resistor ( 1 ), and a second insulation...
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7609141 |
Flexible circuit having overvoltage protection
A first voltage variable material (“VVM”) includes an insulative binder, first conductive particles with a core and a shell held in the insulating binder and second conductive particles without...
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7586162 |
High-value integrated resistor and method of making
A high value resistive device in an integrated circuit is disclosed, including a pair of substantially similar resistor segments each having an elongated semiconductor channel of e.g. silicon,...
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7570509 |
Semiconductor device, logic circuit and electronic equipment
A semiconductor device comprises: a) a multiple layered substrate including a semiconductor substrate, an insulation film formed on the semiconductor substrate, and a semiconductor film, b) a first...
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7569909 |
Phase change memory devices and methods for manufacturing the same
Phase change memory devices and methods for manufacturing the same are provided. An exemplary embodiment of a phase change memory device comprises a substrate. A dielectric layer is formed over the...
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7566610 |
Process for manufacturing integrated resistive elements with silicidation protection
In a process for the fabrication of integrated resistive elements with protection from silicidation, at least one active area ( 15 ) is delimited in a semiconductor wafer ( 10 ). At least one...
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7560376 |
Method for adjoining adjacent coatings on a processing element
Two or more coatings applied to processing elements of a plasma processing system are treated with protective barriers or coatings. A method is described for adjoining two or more coatings on the...
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7557429 |
Semiconductor device with resistor element and dummy active region
A first well is formed in the surface layer of a semiconductor substrate, the first layer being of a first conductivity type, the first well being of a second conductivity type opposite to the...
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7554173 |
Semiconductor device
A semiconductor device accurately monitoring temperature of a semiconductor chip even in a noisy environment, while not requiring a highly accurate detection circuit. A PTC element is bonded onto...
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7550819 |
Metal thin-film resistance element on an insulation film
A semiconductor device having a metal thin-film resistance on an insulation film includes first and second contact holes formed in the insulation film, a first conductive plug formed in the first...
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7545019 |
Integrated circuit including logic portion and memory portion
An integrated circuit includes a logic portion including M conductive layers, a memory portion including N conductive layers, and at least one common top conductive layer over the logic portion and...
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7544940 |
Semiconductor device including vanadium oxide sensor element with restricted current density
In a semiconductor device including a semiconductor substrate, and at least one sensor element made of vanadium oxide formed over the semiconductor substrate, the sensor element is designed so that...
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7538411 |
Integrated circuit including resistivity changing memory cells
Wordline stacks are arranged parallel at a distance from one another on a substrate surface. Bitlines are arranged transversely to the wordline stacks at a distance from one another. Source/drain...
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7528460 |
Semiconductor device sealed with electrical insulation sealing member
A semiconductor device capable of preventing contact between electrode terminals and a die pad as well as capable of surely performing wire bonding to the electrode terminals. A passive component...
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7525176 |
Phase change memory cell design with adjusted seam location
A memory cell comprises a lower electrode, a phase change feature, a spacer feature, and a dielectric layer. The lower electrode comprises a first surface region as well as a second surface region...
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7518213 |
Nonvolatile variable resistance memory device and method of fabricating the same
A nonvolatile variable resistance memory device may include a lower electrode; a stacked structure including a first Cu compound layer disposed on the lower electrode, and a second Cu compound...
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7518212 |
Graded GexSe100-x concentration in PCRAM
The present invention provides a design for a PCRAM element which incorporates multiple metal-containing germanium-selenide glass layers of diverse stoichiometries. The present invention also...
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7511377 |
Semiconductor integrated circuit device and process for manufacturing the same
A SRAM of complete CMOS type having its memory cell composed of six MISFETs, in which a pair of local wiring lines for connecting the input/output terminals of CMOS inverters are formed of a...
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7504710 |
Multilayer dielectric substrate and semiconductor package
A multilayer dielectric substrate that mounts a semiconductor device in a cavity formed on a substrate. The multilayer dielectric substrate includes an opening formed in a surface-layer grounding...
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7498657 |
Vertical resistors and band-gap voltage reference circuits
A vertical resistor. A substrate includes a trench filled by an isolation layer. A first doped-type region and a second doped-type region are formed on both sides of the trench. The first...
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7498600 |
Variable resistance random access memory device and a method of fabricating the same
Provided is a variable resistance random access memory device having an n+ interfacial layer and a method of fabricating the same. The variable resistance random access memory device may include a...
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7495265 |
ESD protection circuit with SCR structure for semiconductor device
An ESD protection structure has: a first P-type semiconductor region connected to a pad; a first N-type semiconductor region coupled with the first P-type semiconductor region; a second P-type...
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7462921 |
Integrated circuit device, method of manufacturing the same and method of forming vanadium oxide film
A vanadium oxide film is formed on an interlayer insulating layer, and a silicon oxide film and a silicon nitride film are formed on the vanadium oxide film in this order. With a resist pattern...
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7456421 |
Vertical side wall active pin structures in a phase change memory and manufacturing methods
A programmable resistor memory, such as a phase change memory, with a memory element comprising narrow vertical side wall active pins is described. The side wall active pins comprise a programmable...
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7449783 |
Nonlinear via arrays for resistors to reduce systematic circuit offsets
A thin film resistor structure includes a plurality of thin film resistor sections. Conductive vias ( 5 ) are disposed on a first end of each of the thin film resistor sections, respectively. The...
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7446391 |
Electro-resistance element and method of manufacturing the same
An electro-resistance element that has a different configuration from conventional elements and shows outstanding resistance change characteristics is provided. An electro-resistance element has...
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7439147 |
Resistor of semiconductor device and method for fabricating the same
A resistor for a semiconductor device is provided. The resistor can include a first polysilicon layer formed on a semiconductor substrate; an insulating layer formed on regions of the first...
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7432549 |
Di/dt servo power switches
The invention relates to a vertical-type power switch disposed in a semi-conductor chip, comprising a winding ( 30 ) located on the periphery of at least one face of said chip. Said winding...
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7429780 |
Fuse circuit and semiconductor device including the same
A semiconductor device includes a fuse circuit, which includes a first conductive region and a second conductive region. The first conductive region has a multi-layered structure, and the second...
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7425720 |
Semiconductor device
A programmable semiconductor device has a switch element in an interconnection layer, wherein in at least one of the inside of a via, interconnecting a wire of a first interconnection layer and a...
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7408239 |
Capture of residual refractory metal within semiconductor device
There is provided a semiconductor device with a configuration in which a dummy silicide area 11 is provided in the vicinity of a non-silicide area 2 to easily capture residual refractory...
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7403094 |
Thin film resistor and dummy fill structure and method to improve stability and reduce self-heating
An integrated circuit thin film resistor structure includes a first dielectric layer ( 18 A) disposed on a semiconductor layer ( 16 ), a first dummy fill layer ( 9 A) disposed on the first...
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7400026 |
Thin film resistor structure
The present invention relates to a thin film resistor formed over a semiconductor substrate. A gate structure is formed and a dielectric layer is formed over the gate structure. A via is then...
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7388268 |
Compound semiconductor multilayer structure, hall device, and hall device manufacturing method
Hall device is provided by enabling stable provision of a quantum well compound semiconductor stacked structure. It has first and second compound semiconductor layers composed of Sb and at least...
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7388260 |
Structure for spanning gap in body-bias voltage routing structure
Structures for spanning gap in body-bias voltage routing structure. In an embodiment, a structure is comprised of at least one metal wire.
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7374174 |
Small electrode for resistance variable devices
A memory element comprising first and second electrodes is provided. The first electrode is tapered such that a first end of the first electrode is larger than a second end of the first electrode....
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7372127 |
Low cost and versatile resistors manufactured from conductive loaded resin-based materials
Resistor devices are formed of a conductive loaded resin-based material. The conductive loaded resin-based material comprises micron conductive powder(s), conductive fiber(s), or a combination of...
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7369377 |
Snubbers for low temperature power electronics
Switching losses and conduction losses are isolated by networks which are partially cryogenic and partially at room temperature. Switching losses are independent of temperature. Advantageously the...
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7358520 |
Semiconductor memory cell, method for fabricating it and semiconductor memory device
A semiconductor memory cell, a method for fabricating it and a semiconductor memory device. A phase change material region of a storage element of the semiconductor memory cell has been or is...
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7355265 |
Semiconductor integrated circuit
A semiconductor integrated circuit comprising a power supply wiring and a ground wiring and a decoupling capacitor formed between the power supply wiring and the ground wiring, wherein at least one...
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7355264 |
Integrated passive devices with high Q inductors
The specification describes flip bonded dual substrate inductors wherein a portion of the inductor is constructed on a base IPD substrate, a mating portion of the inductor is constructed on a cover...
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7342440 |
Current regulator having a transistor and a measuring resistor
The invention relates to a current regulator having the following features:
a first semiconductor body ( 1; 1 ′) having a first and second terminal contact ( 11, 12 ), a transistor (T)...
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7335953 |
Circuit substrate, electro-optical device, and electronic apparatus
The invention provides a circuit substrate including an electrostatic-breakdown-protection circuit efficient for an EL display panel or the like. A substrate includes a common electrode formed on...
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7323762 |
Semiconductor package substrate with embedded resistors and method for fabricating the same
A semiconductor package substrate with embedded resistors and a method for fabricating the same are proposed. Firstly, an inner circuit board having a first circuit layer thereon is provided, and a...
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7323751 |
Thin film resistor integration in a dual damascene structure
A thin film resistor and at least one metal interconnect are formed in an integrated circuit. A first dielectric layer is formed over a metal interconnect layer. A thin film resistor is formed on...
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7323749 |
Semiconductor device comprising an integrated circuit
A semiconductor device with a plurality of passive components ( 7,7 a, 8,8 a ) comprising a bottom substrate ( 1 ), a buried oxide layer ( 2 ) on a portion of the top surface of the bottom...
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