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7615843 |
Guard ring device receiving different voltages for forming decoupling capacitor and semiconductor device having the same
A semiconductor device in which a decoupling capacitor is formed by supplying different power levels to a guard ring device is disclosed. The semiconductor device includes a guard ring, having...
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7615816 |
Buried plate structure for vertical dram devices
A buried plate region for a semiconductor memory storage capacitor is self aligned with respect to an upper portion of a deep trench containing the memory storage capacitor.
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7612448 |
Power module having a cooling device and semiconductor devices mounted on a resin substrate, method of producing same, and air conditioner
A power module includes a power semiconductor, a non-power semiconductor, one resin substrate, and a cooling device. The power semiconductor and the non-power semiconductor configure a power supply...
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7612400 |
MIM device and electronic apparatus
An MIM device includes a lower electrode of a metal nitride film, a hysteresis film of an oxide film containing Nb formed on the lower electrode, and an upper electrode of a metal nitride film...
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7612397 |
Memory cell having first and second capacitors with electrodes acting as control gates for nonvolatile memory transistors
A nonvolatile memory cell that can be mounted in a CMOS manufacturing process, and is capable of implementing high level of programming, reading and erasing ability. The memory cell is configured...
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7608880 |
Semiconductor memory device having a peripheral region including operating capacitors
A semiconductor memory device comprises a cell region including a plurality of unit memory cells, and a peripheral circuit region, the peripheral circuit region including a plurality of peripheral...
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7608877 |
Circuit device having capacitor and field effect transistor, and display apparatus therewith
In a circuit device having a field effect transistor and a capacitor, the capacitor is connected to at least one of a gate electrode, a source electrode and a drain electrode of a field effect...
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7608503 |
Side wall active pin memory and manufacturing method
A method of forming a memory cell comprises forming a stack comprising a first electrode, an insulating layer over the first electrode, and a second electrode over the insulating layer, with a side...
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7606021 |
Metal-insulator-metal capacitor and method for fabricating the same
A metal-insulator-metal (MIM) capacitor that includes a silicon nitride (SiN) dielectric film is disclosed. The MIM capacitor includes a bottom electrode, a top electrode and a dielectric layer...
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7605418 |
Methods of fabricating capacitor
A fabricating method of a capacitor is disclosed. Particularly, a fabricating method of a capacitor which forms a capacitor in the place where the insulation layer of an STI region is removed,...
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7602043 |
Coupling capacitor and semiconductor memory device using the same
A coupling capacitor and a semiconductor memory device using the same are provided. In an embodiment, each memory cell of the semiconductor memory device includes a coupling capacitor so that a...
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7602039 |
Programmable capacitor associated with an input/output pad
The present invention provides a method and apparatus for a programmable capacitor associated with an input/output pad in the semiconductor device. The apparatus includes a semiconductor die having...
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7598605 |
Semiconductor device having capacitive insulation means and communication terminal using the device
A primary side circuit and a secondary side circuit are provided on first and second semiconductor substrates, respectively. A first capacitive insulator on the first substrate electrically...
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7598592 |
Capacitor structure for integrated circuit
A capacitor structure for an integrated circuit. An insulating layer is disposed on a substrate. A first conductive line is embedded in a first level of the insulating layer. A second conductive...
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7595525 |
Integrated circuit capacitor having antireflective dielectric
A capacitor ( 100 ) is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor ( 100 ) has conductive top and bottom electrodes ( 140, 144 ) and a...
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7592660 |
Semiconductor device and method for manufacturing the same
There is provided a semiconductor device which includes a base insulating film formed on a semiconductor substrate, a capacitor formed on the base insulating film, an interlayer insulating film...
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7592626 |
Capacitor and method of manufacturing same
A capacitor comprises: a lower electrode formed of a foil made of a polycrystalline metal; an upper conductor layer; and a dielectric layer disposed between the lower electrode and the upper...
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7592220 |
Capacitance process using passivation film scheme
In accordance with the objectives of the invention a new method and structure is provided for the creation of a capacitor. A contact pad and a lower capacitor plate have been provided over a...
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7589394 |
Interposer
An interposer is constructed with a substrate body having first and second through-holes, a capacitor formed by a laminating dielectric layer and a second electrode portion on a first electrode...
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7589393 |
Semiconductor structure of a high side driver for two high voltage nodes with partially linked deep wells and method for manufacturing the same
A semiconductor structure of a high side driver includes an ion-doped junction. The ion-doped junction includes a substrate, a first deep well and a second deep well, a first heavy ion-doped region...
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7589392 |
Filter having integrated floating capacitor and transient voltage suppression structure and method of manufacture
In one embodiment, a filter structure that integrates one plate of a capacitor with an electrode of a transient voltage device. The filter structure includes a well region of one conductivity type...
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7589361 |
Standard cells, LSI with the standard cells and layout design method for the standard cells
In automatic placing and routing, a standard cell 101 is composed of a P-channel transistor region 102 and an N-channel transistor region 103 . The P-channel transistor region 102 has a...
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7586174 |
Multilayer capacitor
A multilayer capacitor comprised of dielectric layers stacked to form a device body in which a plurality of first internal electrode layers and a plurality of second internal electrode layers...
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7586168 |
High performance photosensor
A photosensor includes a photovoltage generator for generating a photovoltage, and a comparator for determining a number of integer multiples of a threshold voltage associated with the photosensor....
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7582901 |
Semiconductor device comprising metal insulator metal (MIM) capacitor
An MIM capacitor using a high-permittivity dielectric film such as tantalum oxide. The MIM capacitor includes an upper electrode, a dielectric film, and a lower electrode. A second dielectric film...
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7579670 |
Integrated filter having ground plane structure
In one embodiment, a filter structure includes first and second filter devices formed using a semiconductor substrate. A vertical ground plane structure prevents cross-coupling between the first...
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7573120 |
Semiconductor device and method of manufacturing the same
According to an aspect of the present invention, there is provided a semiconductor device comprising a semiconductor substrate, a capacitor which is disposed above the semiconductor substrate and...
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7573117 |
Post last wiring level inductor using patterned plate process
A semiconductor structure. The semiconductor structure includes: a substrate having a metal wiring level within the substrate; a capping layer on and above the substrate; an insulative layer on and...
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7573086 |
TaN integrated circuit (IC) capacitor
A capacitor is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor generally comprises a top conductive plate, a capacitor dielectric and a bottom...
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7569912 |
Differential variable capacitors and their applications
An integrated circuit design for differential variable capacitors uses an integration method to integrate an integrated circuit having differential variable capacitors as a whole, and takes the...
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7567424 |
Electronic component
This electronic component comprises a substrate; and a capacitor part provided on the substrate, the capacitor part includes a first electrode part provided on the substrate; a dielectric film...
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7564116 |
Printed circuit board with embedded capacitors therein and manufacturing process thereof
A printed circuit board having embedded capacitors includes a double-sided copper-clad laminate including first circuit layers formed in the outer layers thereof, the first circuit layers including...
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7560796 |
Capacitor and capacitor array
In a capacitor and a capacitor array configured for reducing an effect of parasitic capacitance, the capacitor array can have a matrix configuration that includes a plurality of unit capacitors....
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7560795 |
Semiconductor device with a capacitor
Embodiments relate to a semiconductor having a capacitor and a method of fabricating the same, that may be capable of simplifying a manufacturing process and increasing a capacitance of a...
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7557425 |
Package cap with bypass capacitance
An integrated circuit package is provided. The package comprises a lid which is adapted to cover an integrated circuit, the lid is further adapted to provide bypass capacitance to the integrated...
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7557400 |
Semiconductor device in which capacitance of a MOS capacitor is complemented with the capacitance of a wiring capacitor
A semiconductor device has a MOS capacitor in which a drain region and a source region of a MOS structure are commonly connected, and a capacitance is formed between the commonly connected drain...
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7557398 |
Semiconductor device having a compensation capacitor in a mesh structure
The compensation capacitor includes: a charge accumulating element having a diffusion layer, a dielectric layer, and a gate electrode layer, wherein the gate electrode layer, the dielectric layer,...
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7557013 |
Methods of forming a plurality of capacitors
A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode...
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7553738 |
Method of fabricating a microelectronic device including embedded thin film capacitor by over-etching thin film capacitor bottom electrode and microelectronic device made according to the method
A microelectronic device, a method of fabricating the device, and a system including the device. The method includes: providing a substrate including an underlying conductive layer and a polymer...
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7547957 |
Thin film capacitors and methods of making the same
An apparatus including a first electrode; a second electrode; a first and second ceramic material disposed between the first electrode and the second electrode, the second ceramic material having a...
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7547956 |
Thick oxide P-gate NMOS capacitor for use in a low-pass filter of a circuit and method of making same
A circuit with dielectric thicknesses is presented that includes a low-pass filter including one or more semiconductor devices having a thick gate oxide layer, while further semiconductor devices...
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7545022 |
Capacitor pairs with improved mismatch performance
A semiconductor device includes a first capacitor comprising a plurality of first unit capacitors interconnected to each other, each having a first unit capacitance; and a second capacitor...
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7544987 |
High-k dielectric materials and processes for manufacturing them
High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and...
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7541265 |
Capacitor material for use in circuitized substrates, circuitized substrate utilizing same, method of making said circuitized substrate, and information handling system utilizing said circuitized substrate
A material for use as part of an internal capacitor within a circuitized substrate includes a polymer (e.g., a cycloaliphatic epoxy or phenoxy based) resin and a quantity of nano-powders of...
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7538371 |
CMOS image sensor integrated with 1-T SRAM and fabrication method thereof
A CMOS image sensor integrated with 1T-SRAM is provided on a substrate having a pixel array part, a logic circuit part, and a memory part by adding only one photoresist process. There are a...
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7535080 |
Reducing parasitic mutual capacitances
A method to reduce parasitic mutual capacitances in embedded passives. A first capacitor is formed by first and second electrodes embedding a dielectric layer. A second capacitor is formed by third...
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7535079 |
Semiconductor device comprising passive components
A method of making a semiconductor device includes the steps of: providing a semiconductor substrate ( 110, 510, 1010, 1610 ) having a patterned interconnect layer ( 120, 520, 1020, 1620 ) formed...
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7535025 |
Structure and manufacturing method for a silicon carbide semiconductor device
In silicon carbide semiconductor device and manufacturing method therefor, a metal electrode which is another than a gate electrode and which is contacted with a singlecrystalline silicon carbide...
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7531419 |
Semiconductor device and a method of manufacturing the same
A capacitor has an MIM (Metal Insulator Metal) structure comprising a lower electrode formed in the interior of an electrode trench which is formed in an interlayer insulating film, a dielectric...
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7528468 |
Capacitor assembly with shielded connections and method for forming the same
A capacitor assembly ( 82 ) is formed on a substrate ( 20 ). The capacitor assembly a first conductive plate ( 38 ) and a second conductive plate ( 60 ) formed over the substrate such that the...
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