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9041155 Semiconductor structure  
A semiconductor structure includes a first capacitor and a second capacitor. The first capacitor includes a plurality of first units and each first unit includes a plurality of first finger...
9041150 Vertically integrated systems  
Embodiments of the present invention provide an integrated circuit system including a first active layer fabricated on a front side of a semiconductor die and a second pre-fabricated layer on a...
9041148 Metal-insulator-metal capacitor structures  
Capacitor structures capable of providing both low-voltage capacitors and high-voltage capacitors are described herein. In one embodiment, a capacitor structure comprises a low-voltage capacitor...
9041154 Contact structure and semiconductor memory device using the same  
A semiconductor memory device includes a substrate having thereon a memory array region and a periphery circuit region. A first dielectric layer covers the memory array region and the periphery...
9041153 MIM capacitor having a local interconnect metal electrode and related structure  
According to one exemplary embodiment, a method for fabricating a metal-insulator-metal (MIM) capacitor in a semiconductor die comprises forming a bottom capacitor electrode over a device layer...
9035194 Circuit board with integrated passive devices  
Embodiments of the present disclosure are directed towards a circuit board having integrated passive devices such as inductors, capacitors, resistors and associated techniques and configurations....
9030002 Semiconductor device having IPD structure with smooth conductive layer and bottom-side conductive layer  
A semiconductor device includes an interface layer, a smooth conductive layer disposed over the interface layer, and a first insulating layer disposed over a first surface of the smooth conductive...
9029187 Using multi-layer MIMCAPs with defective barrier layers as selector element for a cross bar memory array  
Selector devices that can be suitable for memory device applications can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents...
9018733 Capacitor, storage node of the capacitor, and method of forming the same  
A semiconductor structure includes a substrate having thereon at least one conductive region; a plurality of cylinder-shaped electrodes disposed on the substrate, wherein each of the...
9018732 Dielectric thin film element and method for producing the same  
A dielectric thin film element that includes a substrate, a close-adhesion layer formed on one principal surface of the substrate, a capacitance section having a lower electrode layer formed on...
9000563 Capacitor and register of semiconductor device, memory system including the semiconductor device, and method of manufacturing the semiconductor device  
A capacitor of a semiconductor device includes a capacitor structure configured to include electrode layers and dielectric layers alternately stacked, edge regions each stepwise patterned, and a...
9000554 Semiconductor device  
A first isolation trench insulates and separates a low-voltage region, a high-voltage region, and a connection region of the semiconductor layer from each other. A low-potential signal processing...
9000552 Semiconductor integrated circuit device having analog circuit separated from digital circuit using resistive and capacitive element regions  
In a semiconductor integrated circuit device including a digital circuit region in which a digital circuit is formed, and an analog circuit region in which an analog circuit is formed, the analog...
9000562 Flexible processing method for metal-insulator-metal capacitor formation  
A method for forming a metal-insulator-metal (MIM) capacitor includes forming a capacitor bottom plate and a metal interconnect feature on a substrate. A dielectric layer having a predetermined...
8994145 Semiconductor device including capacitor under pad  
According to one embodiment, a semiconductor device includes a semiconductor chip which includes a semiconductor integrated circuit provided in an insulator, a first pad a pad having an upper...
8993396 Capacitor and method for fabricating the same  
A method for fabricating a capacitor includes forming a mold structure over a substrate, wherein the mold structure has a plurality of open parts and has a mold layer stacked with a support layer;...
8994146 Metal-insulator-metal (MIM) capacitor within topmost thick inter-metal dielectric layers  
Embodiments of MIM capacitors may be embedded into a thick IMD layer with enough thickness (e.g., 10 KŘ30 KÅ) to get high capacitance, which may be on top of a thinner IMD layer. MIM capacitors...
8994150 Systems and methods for lowering interconnect capacitance  
Methods and apparatus for lowering the capacitance of an interconnect, are disclosed. An example apparatus may include an interconnect formed in at least one integrated circuit and configured to...
8987723 Display device and method of manufacturing the same  
A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor...
8987862 Methods of forming semiconductor devices having conductors with different dimensions  
A device structure includes an inter-level dielectric, a via, a first conductive trench, and a second conductive trench. The inter-level dielectric has a top surface and a bottom surface. The via...
8987863 Electrical components for microelectronic devices and methods of forming the same  
Electrical components for microelectronic devices and methods for forming electrical components. One particular embodiment of such a method comprises depositing an underlying layer onto a...
8980703 Method of forming semiconductor structure  
A method of forming a semiconductor structure is provided. A substrate having a cell area and a periphery area is provided. A stacked structure including a gate oxide layer, a floating gate and a...
8981440 Semiconductor storage device and method for manufacturing the semiconductor storage device  
A semiconductor-storage-device manufacturing method of the present invention is a method for manufacturing a semiconductor storage device provided with a ferroelectric capacitor including a lower...
8980723 Multiple depth vias in an integrated circuit  
An integrated circuit with vias with different depths stopping on etch stop layers with different thicknesses. A method of simultaneously etching vias with different depths without causing etch...
8975726 POP structures and methods of forming the same  
A device includes a top package bonded to a bottom package. The bottom package includes a molding material, a device die molded in the molding material, a Through Assembly Via (TAV) penetrating...
8975677 Decoupling capacitor cell, cell-based IC, cell-based IC layout system and method, and portable device  
A decoupling capacitor cell includes: a first decoupling capacitor formed by only a pMOS transistor; and a second decoupling capacitor formed by two metal layers. The decoupling capacitor cell is...
8970002 Metal oxide metal capacitor structures  
A metal oxide metal (MOM) capacitor includes an outer conducting structure defined in a plurality of metal layers and a plurality of via layers of an integrated circuit including first opposing...
8969169 DRAM MIM capacitor using non-noble electrodes  
A method for forming a capacitor stack includes forming a first bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the first...
8971014 Protection structure for metal-oxide-metal capacitor  
A capacitor structure includes first and second sets of electrodes and a plurality of line plugs. The first set of electrodes has a first electrode and a second electrode formed in a first...
8969937 Semiconductor device  
A semiconductor device includes a first insulating layer, a contact plug formed in the first insulating layer, a first etch stop layer over the first insulating layer, a second etch stop layer...
8963287 Deep trench capacitor with conformally-deposited conductive layers having compressive stress  
A high density deep trench MIM capacitor structure is provided wherein conductive-compressive-conformally applied layers of a semiconductor material, such as a Poly-SixGe1-x, are interleaved...
8963224 Semiconductor device and method of manufacturing the same  
Provided is a semiconductor device including, on the same semiconductor substrate, a transistor element, a capacitor, and a resistor. The capacitor is formed on an active region, and the resistor...
8963277 Semiconductor structure and method of manufacturing the same  
A semiconductor structure with a high voltage area and a low voltage area includes a substrate of a first conductivity type accommodating the high voltage area and the low voltage area. A resistor...
8963286 Finger metal oxide metal capacitor structures  
A finger metal oxide metal (MOM) capacitor includes an outer conducting structure defined in a plurality of metal layers and a plurality of via layers of an integrated circuit. First and second...
8957500 High-voltage integrated metal capacitor and fabrication method  
A high-voltage metal capacitor with easy integration into existing semiconductor manufacturing processes can provide isolation capacitors up to several kilovolts. The capacitor includes a support...
8957403 Select devices including an open volume, and related methods, memory devices, and electronic systems  
Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve...
8957499 Laminate stacked capacitor, circuit substrate with laminate stacked capacitor and semiconductor apparatus with laminate stacked capacitor  
A method of manufacturing a capacitor includes forming a first ceramic film on a first base made of a metal, forming a second ceramic film on a second base made of a metal, forming a first copper...
8957501 Non-volatile semiconductor storage device  
A non-volatile semiconductor storage device contains a memory cell region, a first electrode, and a second electrode. The memory cell region is formed on a substrate and comprises multiple memory...
8952490 Redox capacitor and manufacturing method thereof  
To provide a redox capacitor that can be used at room temperature and a manufacturing method thereof. Amorphous semiconductor including hydrogen is used as an electrolyte of a redox capacitor. As...
8953334 Apparatus for performing communication control  
An apparatus for performing communication control includes a control module implemented with at least one integrated circuit (IC) whose package includes a plurality of sets of terminals, each set...
8952491 Capacitive element  
A capacitive element includes: an upper electrode; a lower electrode; and a dielectric layer that is disposed between the upper electrode and the lower electrode, and includes a first film, a...
8946832 Filter using a waveguide structure  
A representative filter comprises a silicon-on-insulator substrate having a top surface, a metal shielding positioned above the top surface of the silicon-on-insulator substrate, and a band-pass...
8946856 Decoupling capacitors for integrated circuits  
On-chip decoupling capacitors and methods for placing the same are disclosed in which designated spaces are created between the active circuits to insert designated capacitor cells. The designated...
8946044 Semiconductor device and method of manufacturing semiconductor device  
A lower electrode includes a metal-containing oxide layer having a thickness of 2 nm or less on the surface layer. A metal-containing oxide layer is formed by oxidizing the surface of the lower...
8946854 Metal-insulator-metal capacitor structure and method for manufacturing the same  
A metal-insulator-metal (MIM) capacitor structure includes a first dielectric layer, a first damascene electrode layer, an insulating barrier layer, a second dielectric layer and a second...
8946855 Semiconductor device and method for manufacturing the same  
A semiconductor device and a method for manufacturing the same are disclosed. The semiconductor device includes adjacent storage node contact plugs having different heights, and lower-electrode...
8946045 Metal-insulator-metal (MIM) capacitor with deep trench (DT) structure and method in a silicon-on-insulator (SOI)  
A structure forming a metal-insulator-metal (MIM) trench capacitor is disclosed. The structure comprises a multi-layer substrate having a metal layer and at least one dielectric layer. A trench is...
8946047 Method for fabricating capacitor  
A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact...
8940613 Organic light emitting diode display and method for manufacturing the same  
An organic light emitting diode display includes a substrate; a first capacitor electrode provided over the substrate and including polysilicon; an insulating layer provided over the first...
8941164 Semiconductor devices including capacitor support pads  
A semiconductor device may include a semiconductor substrate and a plurality of first capacitor electrodes arranged in a plurality of parallel lines on the semiconductor substrate with each of the...