Matches 351 - 400 out of 1135 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >
Match Document Document Title
6937458 Selectable decoupling capacitors for integrated circuit and methods of use  
Selectable capacitors are used to modify performance characteristics of functional circuit elements of an integrated circuit (IC). In one embodiment, the decoupling capacitors are implemented as...
6936881 Capacitor that includes high permittivity capacitor dielectric  
A decoupling capacitor is formed on a semiconductor substrate that includes a silicon surface layer. A substantially flat bottom electrode is formed in a portion of the semiconductor surface layer....
6933587 Electronic circuit unit suitable for miniaturization  
The invention provides a surface mounting type electronic circuit unit that is suitable for miniaturization. Thin film circuit elements including capacitors, resistors, and inductance elements are...
6930372 Storage capacitor of planar display and fabrication method of same  
A storage capacitor structure of a planar display is disclosed. The storage capacitor includes a substrate, a bottom electrode, an insulator, and a top electrode. The bottom electrode or top...
6927445 Method to form a corrugated structure for enhanced capacitance  
A method of forming a corrugated capacitor on a semiconductor component. The method of forming the corrugated capacitor comprises a series of depositing alternating layers of doped silicon glass...
6927440 Metal-insulator-metal capacitor  
An interconnection wiring system incorporating two levels of interconnection wiring separated by a first dielectric, a capacitor formed by a second dielectric, a bottom electrode of the lower...
6927475 Power generator and method for forming same  
A power generator. The power generator includes a first substrate, a second substrate, a magnetic film, a first metal layer, a second metal layer and an electricity storage device. The second...
6927474 Method of programming an antifuse  
A metal-to-metal capacitor in a semiconductor integrated circuit is converted to a conductive structure by connecting the first metal plate of the capacitor to ground and the second metal plate of...
6924521 Semiconductor device comprising a capacitor using a ferroelectric material  
A semiconductor device comprises a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode and made of a perovskite type ferroelectrics...
6921960 Capacitor element with an opening portion formed in a peripheral circuit  
A semiconductor device includes a structure in which a first electrode layer, an inter-electrode insulating film and a second electrode layer are laminated in a main circuit in this order, and...
6921961 Semiconductor device having electrical contact from opposite sides including a via with an end formed at a bottom surface of the diffusion region  
A semiconductor ( 10 ) has an active device, such as a transistor, with a directly underlying passive device, such as a capacitor ( 75, 77, 79 ), that are connected by a via or conductive region (...
6919614 Circuit with an integrated voltage regulator and its manufacturing process  
An integrated circuit with a D.C./D.C. voltage regulator and its manufacturing process, including at least one power stage provided with at least two transistors and with at least one capacitor...
6918165 Method for manufacturing a multi-layer capacitor  
A multi-layer capacitor is highly downsized and increased in capacity. A method for manufacturing the multi-layer capacitor includes, in the same vacuum chamber, forming a dielectric layer,...
6916722 Method to fabricate high reliable metal capacitor within copper back-end process  
A new method is provided for the creation of a high-reliability metal capacitor as part of back-end processing. A first layer of metal interconnect is created, a contact point is provided in the...
6917064 Trench capacitor and a method for manufacturing the same  
A trench capacitor comprises a semiconductor substrate, a trench, formed in the semiconductor substrate, having upper and lower portions, a first doped polysilicon layer filled in the lower portion...
6914297 Configuration for generating a voltage sense signal in a power semiconductor component  
The invention relates to a configuration for generating a low-voltage signal proportional to the high voltage present between the source and the drain of a power transistor. For this purpose, a...
6906392 Micromechanical component  
A micromechanical component includes a substrate and a cover layer deposited on the substrate, underneath the cover layer, a region of porous material being provided which mechanically supports and...
6902981 Structure and process for a capacitor and other devices  
A structure and method of fabrication of a capacitor and other devices by providing a semiconductor structure and providing a top insulating layer and conductive features over the semiconductor...
6903438 Low-impedance decoupling device  
A decoupling device for decoupling a high-frequency noise wave in a digital circuit is formed as a line device including a portion of a semiconductor substrate, an insulator film formed thereon as...
6900514 Semiconductor device having a capacitance device  
A semiconductor device having an isolation region formed in a semiconductor substrate and a capacitance device formed above that isolation region. The capacitance device has a first capacitor...
6900517 Non-volatile memory with phase-change recording layer  
A non-volatile memory, which comprises an insulating substrate ( 11 ) that has a first electrode ( 18 ) that extends through the substrate from the front surface to the rear surface thereof; a...
6897552 Semiconductor device wherein chips are stacked to have a fine pitch structure  
There is here disclosed a semiconductor device comprising a chip-mounting-member having a lead formed on its major surface, the lead having a thin film plated portion which covers a surface of a...
6894364 Capacitor in an interconnect system and method of manufacturing thereof  
A fabrication method for an integrated device having a capacitor in an interconnect system is described. At least a first exposed metal line and a second metal line are provided in an insulating...
6891248 Semiconductor component with on board capacitor  
A semiconductor component includes a semiconductor die, and an on board capacitor on the die for filtering transient voltages, spurious signals and power supply noise in signals transmitted to the...
6891247 Semiconductor device including semiconductor bare chip mounted by flip-chip bonding, and board member with thin-film structure capacitor for semiconductor bare chip mounted by flip-chip bonding  
A semiconductor device includes a semiconductor bare chip and an electrically-insulative board member with a thin-film structure capacitor. The semiconductor bare chip has a power supply terminal...
6888218 Embedded capacitor multi-chip modules  
The invention provides systems and methods for interconnecting circuit devices, wherein decoupling capacitors are disposed on a substrate and an interconnect layer having a pattern of circuit...
6888716 On-die de-coupling capacitor using bumps or bars  
A method of fabricating an on-chip decoupling capacitor which helps prevent L di/dt voltage droop on the power grid for high surge current conditions is disclosed. Inclusion of the decoupling...
6887776 Methods to form metal lines using selective electrochemical deposition  
Methods are provided for forming a transistor for use in an active matrix liquid crystal display (AMLCD). In one aspect a method is provided for processing a substrate including providing a glass...
6888219 Integrated structure with microwave components  
A semiconductor device has a silicon layer and a first dielectric layer. A transistor has a drain and a source that are at least partially in the silicon layer. The transistor further has a gate...
6888220 Semiconductor device having a buried wiring lead structure  
A semiconductor device includes a semiconductor substrate, an insulative film formed above the semiconductor substrate, the film having a first groove and a second groove greater in width than the...
6888217 Capacitor for use in an integrated circuit  
A capacitor including a first plate of conductive material that is formed in a predetermined shape. A layer of dielectric material is formed on at least a portion of the first plate and...
6885050 Ferroelectric memory device and method of manufacturing the same  
A method of manufacturing a ferroelectric memory device includes a step of forming a first region ( 24 ) having surface characteristics allowing the material for the members of a ferroelectric...
6885081 Semiconductor capacitor device having reduced voltage dependence  
A semiconductor capacitor device has two pairs of first and second MIM capacitors on a semiconductor substrate. The paired first and second MIM capacitors include respective capacitor dielectric...
6885542 Capacitor structure  
A capacitor is formed with a substantially concave shape and having optional folded or convoluted surfaces. The concave shape optimizes surface area within a small volume and thereby enables the...
6882014 Protection circuit for MOS components  
A protection circuit for MOS components. In the protection circuit, a bypass PMOS transistor has a gate, a source and a substrate, all coupled to a first voltage node and a drain coupled to a gate...
6882045 Multi-chip module and method for forming and method for deplating defective capacitors  
A method for deplating defective capacitors comprising forming a plurality of capacitors on a semiconductor substrate, forming a plurality of metal contacts on the plurality of capacitors, and...
6881996 Metal-insulator-metal (MIM) capacitor structure in copper-CMOS circuits using a pad protect layer  
A metal-insulator-metal (MIM) capacitor structure and method of fabrication for CMOS circuits having copper interconnections are described. The method provides metal capacitors with high figure of...
6882011 ESD protection device having reduced trigger voltage  
An ESD protection device having reduced trigger voltage is disclosed. A first MOS transistor includes a first gate, a first heavily doped region at one side of the first gate, and a second heavily...
6879021 Electronically programmable antifuse and circuits made therewith  
An antifuse device ( 120 ) that includes a bias element ( 124 ) and an programmable antifuse element ( 128 ) arranged in series with one another so as to form a voltage divider having an output...
6876024 Method and layout for MOS capacitors with phase shifted layers  
A layout and a method for generating a mask for a capacitor are provided. The layout and the mask allow for the formation of the capacitor or an array of capacitors without phase conflict when...
6876027 Method of forming a metal-insulator-metal capacitor structure in a copper damascene process sequence  
A method of forming a metal-oxide-metal (MIM), capacitor structure wherein the fabrication procedures used for the MIM capacitor structure are integrated into a process sequence used to form...
6876059 Semiconductor integrated circuit device and method of manufacturing the same  
A semiconductor integrated circuit device according to an embodiment of the present invention has an MIM structure capacitor connected between a power source potential electrode wiring and a ground...
6872995 Ferroelectric capacitor, method of manufacturing same, and semiconductor memory device  
A ferroelectric capacitor has the property that polarization of a ferroelectric thin film can readily be reversed and polarization-reversal charge increased. The ferroelectric capacitor has a...
6870260 Semiconductor module  
Wiring part 12 is provided on one side 11 a of semiconductor device 11 . Wiring part 12 has at least one of interface circuit 13 connecting terminals on semiconductor device 11 and...
6867448 Electro-mechanically polished structure  
A method of patterning a metal surface by electro-mechanical polishing is disclosed. A metal surface is placed in fluid communication with an abrasive surface of a pad. The two surfaces are moved...
6867467 Capacitive micro-electro-mechanical switch and method of manufacturing the same  
The present invention relates to a capacitive micro-electro-mechanical switch and method of manufacturing the same. In the capacitive micro-electro-mechanical switch for use in the radio frequency...
6861728 Dielectric stack without interfacial layer  
A method of forming a dielectric stack device having a plurality of layers comprises the steps of providing a silicon substrate, forming a metal-oxide layer on a silicon oxide layer which is formed...
6857172 Method of manufacturing ferroelectric capacitor  
According to the present invention, a method of manufacturing a ferroelectric capacitor using a ferroelectric thin film, includes steps of: forming a lower conductive layer on a semiconductor...
6855972 Composite integrated circuit and its fabrication method  
A composite integrated circuit is characterized in that to put an oxide thin film into practical use as an electronic device, a highly crystalline oxide thin film is grown on a silicon substrate. A...
6853079 Conductive trace with reduced RF impedance resulting from the skin effect  
The radio frequency (RF) impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fins that extend away from the base region....
Matches 351 - 400 out of 1135 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >