|
Match
|
Document |
Document Title |
|
|
7145217 |
Chip-type noise filter, manufacturing method thereof, and semiconductor package
In a chip-type noise filter having a signal line of a conductor and a magnetic body disposed so as to adhere to the signal line, the magnetic body is a sintered body containing mainly Fe 2 O 3 and...
|
|
|
7145197 |
Semiconductor device and method of manufacturing the same
A semiconductor device includes a semiconductor substrate, a trench formed in the semiconductor substrate, an island-like element region formed in the semiconductor substrate, having an upper...
|
|
|
7141848 |
Memory device and dissimilar capacitors formed on same substrate
A semiconductor device has a split-gate type memory transistor, a capacitor element, and another capacitor element formed on the same chip, in which the capacitor values of the capacitor element...
|
|
|
7141864 |
Grouped capacitive element
There is disclosed a semiconductor device comprising at least one capacitive element group having a plurality of unit capacitive elements. At least one lead-out electrode for bottom electrodes of...
|
|
|
7135730 |
Bias-independent capacitor based on superposition of nonlinear capacitors for analog/RF circuit applications
A first MOS-on-NWELL device is formed on a substrate and has its pickup terminals optionally connected together. A second MOS-on-NWELL device is formed on the substrate and has its pickup terminals...
|
|
|
7135754 |
Chip type solid electrolytic capacitor having a small size and a simple structure
In a chip type solid electrolytic capacitor including a capacitor element and a packaging resin covering the capacitor element, the packaging resin has a mount surface and a side surface adjacent...
|
|
|
7135758 |
Surface mount solder method and apparatus for decoupling capacitance and process of making
A system to package high performance microelectronic devices, such as processors, responds to component transients. In one embodiment, the system includes a decoupling capacitor that is disposed...
|
|
|
7132710 |
Capacitor, semiconductor device having the same, and method of manufacturing the semiconductor device
A semiconductor device with a stack type capacitor having a lower electrode formed of an aluminum-doped metal, and a manufacturing method thereof are provided. The semiconductor device includes: a...
|
|
|
7130181 |
Semiconductor device
A semiconductor device is disclosed which has a plurality of unit capacitive elements. At least one lead-out electrode of bottom electrodes of the unit capacitive elements of the capacitive element...
|
|
|
7129133 |
Method and structure of memory element plug with conductive Ta removed from sidewall at region of memory element film
Disclosed are methods and structures for fabrication of reliable and efficient memory cells. The methods involve formation of a conformal diffusion barrier layer in a via, deposition of an...
|
|
|
7126205 |
Devices having improved capacitance and methods of their fabrication
A capacitor formed by a process using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates...
|
|
|
7126203 |
Semiconductor device having a capacitance device
A semiconductor device having an isolation region formed in a semiconductor substrate and a capacitance device formed above that isolation region. The capacitance device has a first capacitor...
|
|
|
7126207 |
Capacitor with carbon nanotubes
In one embodiment, a capacitor comprises a substrate defining a first electrical terminal; a catalyst layer disposed on the substrate; a plurality of carbon nanotubes disposed on the catalyst...
|
|
|
7126809 |
Semiconductor device and MIM capacitor
An MIM capacitor comprises first and second conductor patterns embedded in a first interlayer insulation film so as to extend continuously in a mutually opposing relationship and forming a part of...
|
|
|
7126206 |
Distributed capacitor array
A capacitor structure in an integrated circuit includes a capacitor region defined within the boundaries thereof with an active circuit layer formed on the surface of the semiconductor substrate. A...
|
|
|
7122888 |
Semiconductor device, electrical inspection method thereof, and electronic apparatus including the semiconductor device
A semiconductor device is arranged so as to include (i) a wire L 1 , connected directly to an LSI chip, which serves as a VGL wire for supplying a voltage VGL to the LSI chip, and (ii) a wire LB 1 ...
|
|
|
7122878 |
Method to fabricate high reliable metal capacitor within copper back-end process
A new method is provided for the creation of a high-reliability metal capacitor as part of back-end processing. A first layer of metal interconnect is created, ac contact point is provided in the...
|
|
|
7122877 |
Semiconductor device and method for producing the same
A semiconductor device of the present invention includes a semiconductor substrate including an active region and an isolating region provided so as to enclose the active region; a capacitance...
|
|
|
7115929 |
Semiconductor constructions comprising aluminum oxide and metal oxide dielectric materials
The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a...
|
|
|
7115938 |
Non-volatile memory cell and method of forming the same
A non-volatile memory cell comprising a transistor and two plane capacitors. In the memory cell, a switching device is disposed on a substrate, a first plane capacitor having a first doped region...
|
|
|
7115931 |
Capacitor element, manufacturing method therefor, semiconductor device substrate, and semiconductor device
A capacitor element configured to mount a semiconductor element thereon includes a base. A capacitor part is provided on the base. The base is made of a resin whose coefficient of linear expansion...
|
|
|
7115969 |
Fixed parallel plate MEMS capacitor microsensor and microsensor array and method of making same
A fixed parallel plate micro-mechanical systems (MEMS) based sensor is fabricated to allow a dissolved dielectric to flow through a porous top plate, coming to rest on a bottom plate. A...
|
|
|
7115926 |
Capacitor constructions, DRAM constructions, and semiconductive material assemblies
In one aspect, the invention includes an etching process, comprising: a) providing a first material over a substrate, the first material comprising from about 2% to about 20% carbon (by weight); b)...
|
|
|
7115934 |
Method and structure for enhancing trench capacitance
A trench capacitor formed with a bottle etch step has a polygonal cross section produced by forming thermally oxidizing the trench walls with thinner oxide at the corners of the trench, then...
|
|
|
7112838 |
Multipurpose metal fill
The present invention adds a plurality of substrate barriers for reducing substrate noise. The barriers, consisting of a plurality of equally sized n-well regions formed within the p-substrate, are...
|
|
|
7112867 |
Resistive isolation between a body and a body contact
A high resistance region may be used to isolate the body of a first transistor from a body contact.
|
|
|
7109090 |
Pyramid-shaped capacitor structure
A capacitor structure which has a generally pyramidal or stepped profile to prevent or reduce dielectric layer breakdown is disclosed. The capacitor structure includes a first conductive layer, at...
|
|
|
7105909 |
Configuration and method for manufacturing filters comprising LC circuit
A structural configuration and manufacture method is applied to manufacture electronic circuits on a ceramic substrate including capacitor and inductors for filters. The electronic circuits have...
|
|
|
7102420 |
Semiconductor device and manufacturing method thereof
Some of the members constituting a semiconductor element are formed from α-Si and an HSG forming process is implemented to form hemispherical polysilicon grains at some of the members formed from...
|
|
|
7102186 |
Semiconductor device and method of manufacturing the same
There are provided the steps of forming an insulating film over a semiconductor substrate, forming sequentially a first conductive film, a dielectric film, a second conductive film on the...
|
|
|
7102204 |
Integrated SOI fingered decoupling capacitor
The invention provides a fingered decoupling capacitor in the bulk silicon region that are formed by etching a series of minimum or sub-minimum trenches in the bulk silicon region, oxidizing these...
|
|
|
7098102 |
Shallow trench isolation structure and dynamic random access memory, and fabricating methods thereof
A method for fabricating a shallow trench isolation (STI) structure is described. A patterned mask layer is formed on a substrate. An ion implantation is performed to form a doped region in a...
|
|
|
7098525 |
Organic polymers, electronic devices, and methods
Organic polymers for use in electronic devices, wherein the polymer includes repeat units of the formula:
wherein: each R 1 is independently H, an aryl group, Cl, Br, I, or an organic group...
|
|
|
7091542 |
Method of forming a MIM capacitor for Cu BEOL application
The present invention relates generally to integrated circuits, and particularly, but not by way of limitation, metal-insulator-metal (MIM) capacitors formed within a trench located within a...
|
|
|
7091546 |
Semiconductor memory with trench capacitor and method of fabricating the same
A semiconductor device includes semiconductor substrate, a trench capacitor formed in the semiconductor substrate, a cell transistor formed so as to the trench capacitor and having a gate electrode...
|
|
|
7091588 |
Semiconductor device including primary and secondary side circuits on first and second substrates with capacitive insulation
A primary side circuit and a secondary side circuit are provided on first and second semiconductor substrates, respectively. A first capacitive insulator on the first substrate electrically...
|
|
|
7087949 |
Selective hemispherical silicon grain (HSG) conversion inhibitor for use during the manufacture of a semiconductor device
A method used to form a semiconductor device comprises forming a layer such as a container capacitor layer having a bottom plate layer. The bottom plate layer is formed to define a receptacle, and...
|
|
|
7087977 |
Semiconductor device including multiple wiring layers and circuits operating in different frequency bands
Plural elements forming a high frequency device in one chip are provided by forming a resistor element and the lower electrode of a capacitor element from one identical polycrystal silicon film...
|
|
|
7084449 |
Microelectronic element having trench capacitors with different capacitance values
A microelectronic element is provided having a major surface, the microelectronic element including a first capacitor formed on a sidewall of a first trench, the first trench being elongated in a...
|
|
|
7084482 |
Capacitor of a semiconductor device and memory device using the same
A capacitor of a semiconductor device includes a lower electrode, a dielectric layer, including a plurality of band gaps, formed on the lower electrode, and an upper electrode formed on the...
|
|
|
7079375 |
Set of integrated capacitor arrangements, especially integrated grid capacitors
A set of integrated capacitor arrangements is presented, each of which has a circuitry-effective main capacitor and a connectable correction capacitor. Each capacitor arrangement has an...
|
|
|
7078310 |
Method for fabricating a high density composite MIM capacitor with flexible routing in semiconductor dies
According to one embodiment, a structure comprises an electrode of a lower MIM capacitor situated in a first interconnect metal layer of a semiconductor die. The structure further comprises a...
|
|
|
7076858 |
Method for controlling resonant tag frequency
A method of making a resonant frequency tag having a predetermined frequency comprises forming a first conductive pattern comprising an inductive element and a first land having a first end...
|
|
|
7078785 |
Semiconductor device and making thereof
By forming a conductive smoothing layer over the bottom electrode and/or a capacitor dielectric, a MIM capacitor with improved reliability due to reduction of geometrically enhanced electric fields...
|
|
|
7075185 |
Routing vias in a substrate from bypass capacitor pads
A method for routing vias in a multilayer substrate from bypass capacitor pads is disclosed. One embodiment of a method may comprise arranging a bypass capacitor power pad spaced apart from a...
|
|
|
7067869 |
Adjustable 3D capacitor
There is a need for adjustable capacitors for use in LC or RC matching networks in micro-circuits. This has been achieved by forming a set of individual capacitors that share a common bottom...
|
|
|
7061746 |
Semiconductor component with integrated capacitance structure having a plurality of metallization planes
A semiconductor component includes an insulating layer, which is configured on a semiconductor substrate and in which a capacitor structure is formed. The capacitor structure has at least two...
|
|
|
7061073 |
Diamondoid-containing capacitors
Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit...
|
|
|
RE39124 |
Integrated circuit having capacitive elements
An integrated circuit having capacitive elements for smoothing a supply voltage is described. In this case, at least one additional metal electrode, which is configured as a high...
|
|
|
7061093 |
Semiconductor device and voltage regulator
A semiconductor device having a chip size package is disclosed. The chip size package comprises a semiconductor chip having at least a bonding pad, at least a terminal of said chip size package and...
|