Matches 451 - 500 out of 1135 < 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 >
Match Document Document Title
6753567 Lanthanum oxide-based dielectrics for integrated circuit capacitors  
Lanthanum oxide-based gate dielectrics are provided for integrated circuit field effect transistors. The gate dielectrics may include lanthanum oxide, preferably amorphous lanthanum oxide and/or an...
6750500 Capacitor electrode for integrating high K materials  
A conductive composition of tantalum nitride is disclosed for use as a conductive element in integrated circuits. The layer is shown employed in a memory cell, and in particular in a cell...
6747334 Thin-film capacitor device  
A thin-film capacitor device for performing temperature compensation is manufactured by layering a first dielectric thin-film and a second dielectric thin-film, wherein the second dielectric...
6747318 Buried channel devices and a process for their fabrication simultaneously with surface channel devices to produce transistors and capacitors with multiple electrical gate oxides  
A method for fabricating buried channel NMOS devices and the devices themselves are disclosed. These buried channel NMOS devices are fabricated with a p-type substrate, an n-type implant in the top...
6740901 Production of semiconductor integrated circuit  
A semiconductor integrated circuit in which the storage capacitor has an increased capacitance and a decreased leakage current. The storage capacitor is formed by the steps of: forming a...
6737728 On-chip decoupling capacitor and method of making same  
On-chip decoupling capacitor structures, and methods of fabricating such decoupling capacitors are disclosed. In one embodiment of the present invention, a capacitor stack may consist of a bottom...
6734526 Oxidation resistant microelectronics capacitor structure with L shaped isolation spacer  
A capacitor structure within a microelectronic product employs at least one of: (1) an oxidation barrier layer formed upon a second capacitor plate within the capacitor structure; and (2) a spacer...
6734487 Memory integrated circuitry with DRAMs using LOCOS isolations and areas less than 6F2  
Memory integrated circuitry includes an array of memory cells formed over a semiconductive substrate and occupying area thereover, at least some memory cells of the array being formed in lines of...
6732335 Semiconductor IC with an inside capacitor for a power supply circuit and a method of automatically designing the same  
A semiconductor IC (Integrated Circuit) has blocks implemented as a standard cell each. Wirings are arranged in a wiring region for wiring the connections of circuit devices of a standard cell,...
6730950 Local interconnect using the electrode of a ferroelectric  
Ferroelectric device structures are provided comprising a ferroelectric capacitor, first and second circuit elements, and first and second contacts. The ferroelectric capacitor residing over the...
6720604 Capacitor for an integrated circuit  
The present invention provides a capacitor comprising a conductive plug comprising a top surface and exposed sidewalls, wherein the sidewalls comprise a layer selected from the group consisting of...
6720603 CAPACITOR STRUCTURE AND A SEMICONDUCTOR DEVICE WITH A FIRST METAL LAYER, A SECOND METAL SILICIDE LAYER FORMED OVER THE FIRST METAL LAYER AND A SECOND METAL LAYER FORMED OVER THE SECOND METAL SILICIDE LAYER  
A disadvantage upon heat treatment in an oxygen atmosphere of a dielectric film formed on a lower electrode of capacitance device of DRAM that oxygen permeating the lower electrode oxidizes a...
6713836 Packaging structure integrating passive devices  
In a leadframe packaging structure, a leadframe includes a plurality of first leads, a plurality of second leads, and a die pad. The first leads define a chip-bonding region in which is arranged...
6713840 Metal-insulator-metal device structure inserted into a low k material and the method for making same  
The present disclosure provides a metal-insulator-metal (MIM) device structure inserted in a low-k material and the method for forming same. The low-k material has a first low-k material layer at...
6713805 Semiconductor memory device with increased capacitance  
A plurality of capacitors of which the sidewalls, that are storage nodes, extend in the vertical direction are aligned in the horizontal direction. Storage node has a rectangular form made of...
6713846 Multilayer high &kgr dielectric films  
A new multilayer dielectric film for improving dielectric constant and thermal stability of gate dielectrics is provided. The multilayer dielectric film comprises a first layer formed of a metal...
6710425 Structure to increase density of MIM capacitors between adjacent metal layers in an integrated circuit  
A high density MIM capacitor structure and method of manufacturing the same is disclosed for integrated circuits having multiple metal layer interconnections. The capacitor structure is formed...
6710426 Semiconductor device and transceiver apparatus  
A field effect transistor (FET) is formed on a semiconductor substrate. A drain terminal, a source terminal, and a gate terminal connected to the FET are also formed on the semiconductor substrate....
6707091 Semiconductor device having capacitor  
A semiconductor device having a capacitor according to the present invention has a storage node and a cell plate opposed to each other through a capacitor dielectric layer, and at least either the...
6703681 Variable-capacitance capacitor  
The invention concerns a variable capacitance capacitor comprising a periodic structure of raised zones ( 5 ) separated by recesses ( 6 ) formed in a type N semiconductor substrate ( 1 ). The walls...
6703705 Semiconductor device and method for packaging same  
A semiconductor device has an LSI device provided with a plurality of power supply line connection pads and ground line connection pad in a peripheral edge part of a circuit-formation surface,...
6700152 Dynamic random access memory including a logic circuit and an improved storage capacitor arrangement  
The new structure of a memory cell which enables avoiding the problem of a step without increasing the number of processes, the structure of a semiconductor integrated circuit in which a common...
6700177 Compact, surface-mounting-type, electronic-circuit unit  
In a surface-mounting-type electronic-circuit unit, circuit elements, including capacitors, resistors, and inductive devices, and electrically conductive patterns connected to the circuit elements...
6696702 Silicon carbide semiconductor switching device  
An object of the present invention is to improve the relationship between the switching loss and the conduction loss in a semiconductor device comprising a diode and a switching device made of...
6690055 Devices containing platinum-rhodium layers and methods  
A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula L y RhY z is provided. Also provided is a chemical vapor co-deposited...
6691294 Method and device for implementing by-pass capacitors  
An unused logic portion of a device is identified, where the unused logic portion of the device is part of a metal definable logic portion of the device. The unused logic portion is specified to be...
6680542 Damascene structure having a metal-oxide-metal capacitor associated therewith  
The present invention provides a semiconductor device, including an interconnect and a capacitor, and a method of fabrication therefor. The method includes forming a damascene interconnect...
6680520 Method and structure for forming precision MIM fusible circuit elements using fuses and antifuses  
The present invention describes an apparatus and method for fabrication of a precision circuit elements. In particular, the circuit elements are fabricated as part of an integrated circuit...
6677650 Silicon plugs and local interconnect for embedded memory and system-on-chip (SOC) applications  
A process for fabricating system-on-chip devices which contain embedded DRAM along with other components such as SRAM or logic circuits is disclosed. Local interconnects, via salicides and tungsten...
6674131 Semiconductor power device for high-temperature applications  
In a SiC substrate ( 10 ), a first active region ( 12 ) composed of n-type heavily doped layers ( 12 a ) and undoped layers ( 12 b ), which are alternately stacked, and a second active region ( 13...
6670692 Semiconductor chip with partially embedded decoupling capacitors  
A partially embedded decoupling capacitor is provided as an integral part of a semiconductor chip for reducing delta-I noise. The semiconductor chip includes a plurality of embedded metal layers, a...
6670663 DRAM cell capacitor and manufacturing method thereof  
A method for manufacturing a cell capacitor includes a step of forming an upper electrode and a trench for the lower electrode simultaneously in a single mask step. Further steps for manufacturing...
6664606 Multi-layer integrated circuit structure with reduced magnetic coupling  
A method of utilizing passive circuit components in an integrated circuit comprising the steps of providing a plurality of integrated capacitive elements and a plurality of integrated inductive...
6661079 Semiconductor-based spiral capacitor  
Increased capacitance per unit of area with reduced series resistance and inductance is provided by a semiconductor-based capacitor with a spiral shape. The capacitor utilizes a plurality of...
6656826 Semiconductor device with fuse to be blown with energy beam and method of manufacturing the semiconductor device  
A semiconductor device has a fuse to be blown with an energy beam. The semiconductor device has copper wiring levels formed on a semiconductor substrate on which semiconductor elements are formed,...
6657275 Pad and via placement design for land side capacitors  
An integrated circuit package and land side capacitor with reduced power delivery loop inductance. The capacitor pads have vias that lie underneath the land side capacitor, and have interposed digits.
6656766 Semiconductor device having chip scale package  
A first surface of a semiconductor chip and an upper surface of a circuit board are bonded with a pad of the semiconductor chip fitted to a first opening of the circuit board. The pad is...
6653230 Semiconductor device having concave electrode and convex electrode and method of manufacturing thereof  
It is intended to enable simultaneous formation of concave capacitor storage electrodes and a convex bit contact plug electrode and thereby makes it possible to reduce spaces of margins for...
6653858 Bypass capacitance localization  
Localizing bypass capacitance for the purpose of reducing or eliminating noise in power supplies in an integrated circuit (IC). After a data path block of macro cells has been constructed by the IC...
6649998 Passive devices and modules for transceiver  
A passive device and module for a transceiver, and a manufacturing method thereof are provided. The passive device includes a semiconductor or a dielectric substrate, at least one capacitor, at...
6649999 Semiconductor chip configuration with a layer sequence with functional elements contacted by contact pads  
In a semiconductor chip, conductive tracks run in a rewiring layer from contact pads to contact elevations. The contact pads are formed as vias. The conductive tracks are constructed in sections as...
6649958 Semiconductor device with MIS capacitors sharing dielectric film  
A semiconductor device having an MIS capacitor having a low capacitance value and an MIS capacitor having a high capacitance value, and to a manufacturing method thereof. One MIS capacitor consists...
6646298 Capacitor with oxygenated metal electrodes and high dielectric constant materials  
A stabilized capacitor using high dielectric constant dielectric materials, such as Ta 2 O 5 and Ba x Sr (1-x) TiO 3 , and methods of making such capacitors are provided. A preferred method...
6646321 Power transistor with internally combined low-pass and band-pass matching stages  
RF power transistor provided with an internal shunt inductor, characterized in that the shunt is produced in two separated, capacitors (Cb, Cp), each internally bonded to the transistor internal...
6645779 FeRAM (ferroelectric random access memory) and method for forming the same  
A ferroelectric random access memory (FeRAM) device including a semiconductor substrate, a transistor, a first interlayer insulating film formed on the transistor, a plug buried in a contact hole...
6646323 Zero mask high density metal/insulator/metal capacitor  
The present invention is directed to a structure and method of forming an integrated circuit MIM capacitor having a relatively capacitance without the need for an additional mask step. Methods of...
6639299 Semiconductor device having a chip size package including a passive element  
A semiconductor device includes a semiconductor substrate on which a circuit element forming region and a plurality of connection pads are formed, a first columnar electrode which is formed on a...
6633197 Gate capacitor stress reduction in CMOS/BICMOS circuit  
Method and apparatus for using a MOSFET having a thin gate oxide layer as a gate capacitor is provided. The method includes the steps of biasing at least one of a source and a drain of the MOSFET...
6630707 Semiconductor device including logic circuit and memory circuit  
The semiconductor device with its primary bit line and secondary bit lines, according to the present invention, is capable of being accessed at a high speed. In this semiconductor device, any one...
6627971 Polysilicon structures with different resistance values for gate electrodes, resistors, and capacitor plates  
A device with a plurality of structures with different resistance values is formed on a substrate. A polysilicon layer is formed upon the substrate. A silicon oxide layer is formed over the...
Matches 451 - 500 out of 1135 < 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 >