Matches 401 - 450 out of 532 < 1 2 3 4 5 6 7 8 9 10 11 >
Match Document Document Title
5493144 Field progammable device with contact openings  
A method is provided for forming a field programmable device of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A first conductive layer is formed. A...
5493147 Antifuse circuit structure for use in a field programmable gate array and method of manufacture thereof  
An antifuse structure particularly suitable for field programmable gate arrays is presented. In most present day processes the antifuse structure is formed with a refractory metal layer, amorphous...
5490042 Programmable silicon circuit board  
A signal line network on a substrate for interconnecting IC chips is programmable after manufacture to define the desired connections. The signal lines comprise line segments arranged end-to-end in...
5486707 Antifuse structure with double oxide layers  
An antifuse for programmable integrated circuit devices is formed above a refractory metal on a thin native oxide layer and comprises an amorphous compound resulting from an PECVD deposition using...
5485032 Antifuse element with electrical or optical programming  
A programmable antifuse element comprising adjacent bodies of germanium and aluminum or aluminum allow form a low resistance connection of good mechanical and thermal properties when heated to a...
5475253 Antifuse structure with increased breakdown at edges  
An antifuse is provided which includes a first conductive layer, an antifuse layer formed on the first conductive layer, and a second conductive layer formed on the antifuse layer. A portion of the...
5471154 Programming of antifuses  
The invention allows programming an antifuse so as to reduce the antifuse resistance and the standard deviation of the resistance without increasing the programming current. This is achieved by...
5469379 Multi-level vROM programming method and circuit  
A method and system for programming vROM programmable memories using antifuses fabricated from undoped amorphous silicon as a high resistance link or layer between two metal layers. Whenever a...
5463244 Antifuse programmable element using ferroelectric material  
An electrically programmable antifuse element using ferroelectric materials for the insulative dielectric layer, methods for producing same, and an integrated circuit applying a plurality of...
5451811 Electrically programmable interconnect element for integrated circuits  
A user-programmable interconnect device includes a first lower electrode comprising a conductive material. A layer of dielectric material is disposed over the top surface of the lower conductor. An...
5451810 Metal-to-metal antifuse structure  
A method of forming a metal-to-metal antifuse. An antifuse stack 32 is formed comprising a first metal layer 16, an antifuse dielectric layer, and an etchstop layer. The etchstop layer may, for...
5449947 Read-disturb tolerant metal-to-metal antifuse and fabrication method  
A "read-disturb" resistant metal-to-metal antifuse includes a lower electrode comprising a first metal layer in a microcircuit structure. An inter-metal dielectric is disposed over the lower...
5447880 Method for forming an amorphous silicon programmable element  
A method for forming an amorphous silicon programable element which requires less than about one square micron of area. The method includes the steps of forming a bottom conductor, depositing an...
5448187 Antifuse programming method and circuit which supplies a steady current after a programming voltage has dropped  
An integrated circuit, supplied with a supply voltage Vcc, the intergrated circuit including: an antifuse including terminals; and a programming circuit for programming the antifuse, the...
5444290 Method and apparatus for programming antifuse elements using combined AC and DC electric fields  
An antifuse element has a dielectric layer comprising materials whose dielectric constant increases in the presence of a DC electric field, such as a ferroelectric. An applied AC electric field and...
5444287 Thermally activated noise immune fuse  
A noise immune fuse having sub-micron dimensions which can be programmed by an electrically and thermally synchronized event. The fuse includes a pair of fuse links in close proximity of each...
5440167 Antifuse with double via contact and method of manufacture therefor  
The present invention provides for a method of forming an antifuse in an integrated circuit having a first insulating layer on a semiconductor substrate. The method comprises forming a first metal...
5434432 Antifuse device for controlling current in a circuit using an antifuse  
A device (10) for controlling current through a circuit has an antifuse material (18) separating a first conductor (12) and a second conductor (20). An insulating element (14) and another...
5434448 Programmable contact structure  
A programmable semiconductor contact structure and method are provided. A semiconductor substrate has a first patterned conductive layer for forming an interconnect. A first insulating layer...
5428237 Semiconductor device having an insulated gate transistor  
An insulated gate type transistor includes a plurality of major electrode regions, a channel region provided between the plurality of major electrode regions, a gate electrode provided on the...
5426614 Memory cell with programmable antifuse technology  
A memory cell (10) comprising a first antifuse (A1) operable to place the memory cell (10) in a non-volatile state. In one embodiment, the memory cell (10) comprises a pair of cross-coupled...
5418738 Low voltage programmable storage element  
A programmable storage element for redundancy-programing includes a programmable antifuse circuit, which includes a plurality of first resistors and a switching circuit for coupling the first...
5416355 Semiconductor integrated circuit protectant incorporating cold cathode field emission  
An electronic element is provided which includes a pair of electrodes (referred to as facing electrodes) formed within the groove of an insulating film on the substrate, the end portions of the...
5416343 Semiconductor device provided with a number of programmable elements  
A semiconductor device includes a number of programmable elements arranged in a matrix of rows and columns. The elements each have a doped semiconductor region (10) and a conductor region (20)...
5411917 Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayer  
An antifuse may be fabricated as a part of an integrated circuit in a layer located above and insulated from the semiconductor substrate. The antifuse includes a lower first electrode, a first...
5412245 Self-aligned vertical antifuse  
An integrated circuit has a plurality of programmable antifuses. Each antifuse can be programmed to connect metals runners on one level with either or both of a pair of runners on a second level.
5412244 Electrically-programmable low-impedance anti-fuse element  
Electrically-programmable low-impedance antifuses are disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The antifuses of the...
5410163 Semi-conductor integrated circuit device including connection and disconnection mechanisms to connect and disconnect monitor circuit and semiconductor integrated circuit from each other  
A monitor circuit provided in a chip in which a semiconductor integrated circuit is formed. Connection mechanisms and disconnection mechanisms are connected in series in wirings connected to the...
5401943 Method and apparatus for shipping electronically stored communications data  
A method for shipping electronically stored letter contents or communications and/or data on flat information carriers, particularly chip cards, requiring postal franking or prepaid postage,...
5401993 Non-volatile memory  
A non-volatile memory includes a single transistor having a semiconductor substrate, source and drain diffusion layers formed on a surface of the semiconductor substrate, and a gate electrode...
5387812 Electrically programmable antifuse having a metal to metal structure  
A metal-to metal antifuse device is provided in a double layer metal interconnect structure. A lower electrode comprises a first multilayer metal layer interconnect disposed on an insulator. An...
5381034 SCSI terminator  
An integrated circuit terminator for a SCSI bus with resistors made of laser-blowable fuses in an array and a reference voltage source made with a bandgap generator and a two stage amplifier...
5374832 Antifuse having TiW oxide film between two metal layers  
An antifuse (42) is formed by forming a layer of titanium tungsten (34) overlying a portion of a first metal layer (28). The titanium tungsten layer (34) is oxidized to form a film of oxide (36) on...
5373379 Repairable liquid crystal display panel with laser fusible links  
Disclosed is a wiring for an electronic circuit, comprising a substrate, a first conductor layer formed on said substrate, an insulating layer formed on said insulating layer, and a second...
5371402 Low capacitance, low resistance sidewall antifuse structure and process  
A method and resulting structure to provide an antifuse wherein the resistance of the programmed fuse and the line resistance and capacitance are materially reduced relative to the prior art and...
5367392 Active matrix display panel having connectable secondary switches  
An active matrix of a display panel having a plurality of array elements and at least two data busses, each array element including a primary switch initially connected to the data busses and at...
5365105 Sidewall anti-fuse structure and method for making  
A described embodiment of the present invention includes an anti-fuse comprising: a first conductive layer having a horizontal major surface and having a substantially vertical sidewall; a thick...
5353246 Programmable semiconductor antifuse structure and method of fabricating  
A programmable semiconductor antifuse structure and method of fabricating are provided which allow for miniaturization of components to an area of less than one micron. The cell exhibits a high...
5341267 Structures for electrostatic discharge protection of electrical and other components  
A first passive ESD protection device for an electronic component in a microcircuit includes a fuse element shunting the component to be protected and includes a passive programming path from the...
5331196 One-time, voltage-programmable, logic element  
A one-time, voltage-programmable, logic element has an antifuse element constructed within a trench etched in a silicon substrate. A sidewall of the trench abuts a diffusion region. The trench is...
5331197 Semiconductor memory device including gate electrode sandwiching a channel region  
A semiconductor memory device includes: an insulated gate transistor having a plurality of main electrode regions provided along a major surface of a substrate and a channel region provided between...
5331181 Non-volatile semiconductor memory  
A non-volatile semiconductor memory providing a semiconductor substrate including source and drain diffusion regions and a gate electrode, and an insulating film which is at least provided on the...
5329153 Antifuse with nonstoichiometric tin layer and method of manufacture thereof  
An antifuse in an integrated circuit which has first and second conducting lines, a semiconductor layer of amorphous silicon between the first and second conducting lines, and a barrier metal layer...
5321322 Programmable interconnect architecture without active devices  
An integrated, user-programmable interconnect architecture, includes a plurality of input/output pads arranged in a matrix of rows and columns, each of the input/output pads being connected to a...
5311053 Interconnection network  
An interconnection element for use in an user-configurable interconnection technology includes a normally shorted fuse element and a normally open antifuse element connected in series. The antifuse...
5311039 PROM and ROM memory cells  
An antifuse memory cell having a P + polysilicon doping in a region directly under an intrinsic silicon programming layer. The P + polysilicon region is surrounded by an N - polysilicon doped...
5303199 Redundant memory device having a memory cell and electrically breakable circuit having the same dielectric film  
An easily circuit-programmable semiconductor device which comprises a dynamic random access memory (DRAM) unit, a redundancy circuit and a connection between them, the DRAM unit having as a...
5299152 Anti-fuse memory device with switched capacitor setting method  
A semiconductor device includes memory cells each of which include a plurality of groups of an anti-fuse and a transistor connected in series; a capacitor including first and second electrodes,...
5298784 Electrically programmable antifuse using metal penetration of a junction  
An improved antifuse uses metal penetration of either a P-N diode junction or a Schottky diode. The P-N junction, or Schottky diode, is contacted by a diffusion barrier such as TiN, W, Ti-W alloy,...
5299151 Method for writing into semiconductor memory  
A method is provided for writing into a semiconductor memory which includes a MOS transistor formed on a semiconductor substrate and an anti-fuse formed of an insulating film and an upper electrode...
Matches 401 - 450 out of 532 < 1 2 3 4 5 6 7 8 9 10 11 >