Matches 301 - 350 out of 532 < 1 2 3 4 5 6 7 8 9 10 11 >
Match Document Document Title
5962910 Metal-to-metal via-type antifuse  
A metal-to-metal antifuse disposed between two aluminum metallization layers in a CMOS integrated circuit or similar structure includes an antifuse material layer having a substantially...
5955762 Microelectronic package with polymer ESD protection  
A semiconductor package having positioned therein a protection layer which protects the integrated circuit chip from electrostatic discharge (ESD) damage. The protection layer is made of a material...
5936288 Semiconductor integrated circuit device and low breakdown voltage zener diode  
Anode and cathode regions at a principal surface of a semiconductor substrate have the same characteristics as source and drain regions of a P type MOS transistor. A cathode region is superposed...
5936297 Programmable semiconductor element having an antifuse structure  
A programmable semiconductor element having an antifuse structure is disclosed. A first insulation film is formed on a silicon substrate. First and second conductors are formed on the first...
5937281 Method to form metal-to-metal antifuse for field programmable gate array applications using liquid phase deposition (LPD)  
A method of fabricating an antifuse structure for field programmable gate array (FPGA) applications is described. First, a field oxide layer for isolation is grown on the semiconductor silicon...
5929505 Inter-metal-wiring antifuse device provided by self-alignment  
A first electrode layer is formed on a semiconductor substrate, and surfaces other than a top surface thereof are buried in an insulation film, and the top surface makes the same surface as that of...
5920110 Antifuse device for use on a field programmable interconnect chip  
This interconnect chip provides the function of an antifuse device. The interconnect chip is initially disconnected. Application of a high voltage applied across two terminals on the chip causes...
5917229 Programmable/reprogrammable printed circuit board using fuse and/or antifuse as interconnect  
Two types of programmable elements, fuses and antifuses, are disclosed for interconnecting the terminals of electronic components mounted on printed circuit boards (PCBs), multichip modules (MCMs)...
5915171 Process of fabricating an antifuse structure  
An antifuse structure for semiconductor programmable logic devices and the process of fabrication are described. The antifuse structure has its bottom electrically conductive layer featuring sharp...
5913137 Process ESD protection devices for use with antifuses  
A process electrostatic discharge ("ESD") protection device is incorporated on a chip with the antifuses that it is designed to protect and is formed as close in time as possible to the deposition...
5909049 Antifuse programmed PROM cell  
An antifuse based PROM cell design allows large currents to be sinked during cell programming to ensure low programmed resistance of the cell while using minimum-geometry select devices. This is...
5903041 Integrated two-terminal fuse-antifuse and fuse and integrated two-terminal fuse-antifuse structures incorporating an air gap  
A two-terminal fuse-antifuse structure comprises a horizontal B-fuse portion and a vertical A-fuse portion disposed between two metallization layers of an integrated circuit device. The...
5903042 Self-aligned antifuse with base  
A method of integrating a low aspect ratio antifuse into low capacitance interconnect levels which involves fabrication of an antifuse base which is self-aligned to either a lower interconnect...
5886392 One-time programmable element having controlled programmed state resistance  
A one-time non-conductive programmable element which is programmable to conduct current is provided. The programmable element comprises several anti-fuses connected in parallel with each other....
5869869 Microelectronic device with thin film electrostatic discharge protection structure  
Microelectronic devices are formed on a substrate of an integrated circuit. An electrically conductive ground or power plane, and an ElectroStatic Discharge (ESD) protection layer are formed on the...
5866938 Semiconductor device equipped with antifuse elements and a method for manufacturing an FPGA  
A semi conductor device is provided having the following arrangement. A first electrode is formed on the major surface of a semiconductor substrate and comprises a first Al connection layer formed...
5866937 Double half via antifuse  
An antifuse comprises a substantially planar conductive lower electrode covered by a first layer of silicon nitride. A layer of amorphous silicon is disposed over the silicon nitride layer. A first...
5852323 Electrically programmable antifuse using metal penetration of a P-N junction  
An antifuse is described that can be formed without masks or mask steps beyond those required for a conventional CMOS process. The antifuse includes adjacent p-type and n-type diffusion regions...
5844298 Method and apparatus for programming anti-fuses  
A programming circuit programs an anti-fuse having first and second terminals with the programming circuit and the anti-fuse being fabricated in the same integrated circuit. The programming circuit...
5838530 Applications of protective ceramics  
It is beneficial for an FPGA, PROM, DRAM and superconductive circuit to use a protective ceramic as its insulating material. This protective ceramic can densely cover metal surface and is free of...
5834824 Use of conductive particles in a nonconductive body as an integrated circuit antifuse  
A novel antifuse includes a composite of conductive particles dispersed throughout a nonconductive matrix, which composite is located inside an antifuse via. The antifuse via is defined by a...
5831325 Antifuse structures with improved manufacturability  
An antifuse structure of the present invention comprises an antifuse layer and a bottom electrode which are immune to the damages caused by harmful processing environment. The three major...
5825072 Circuits for ESD Protection of metal to-metal antifuses during processing  
A static-charge protection device for an antifuse includes an additional second-sized aperture smaller in area than the antifuse apertures disposed in the same inter-electrode dielectric layer....
5821558 Antifuse structures  
An antifuse structure includes a first electrode, a layer of enhanced amorphous silicon over the first electrode, and a second electrode over the layer of enhanced amorphous silicon. The layer of...
5813881 Programmable cable and cable adapter using fuses and antifuses  
Two types of programmable elements, fuses and antifuses, are disclosed for forming an electrically programmable cable in one embodiment and a cable adapter in another embodiment. The cable and the...
5811870 Antifuse structure  
According to the preferred embodiment, an antifuse structure and method for personalizing a semiconductor device is provided that overcomes the limitations of the prior art. The preferred...
5807786 Method of making a barrier layer to protect programmable antifuse structure from damage during fabrication sequence  
A method for forming an antifuse interconnect structure, for a one-time fusible link, to be used with field-programmable gate arrays, has been developed. The process features the use of an...
5808351 Programmable/reprogramable structure using fuses and antifuses  
Two types of programmable elements, fuses and antifuses, are disclosed for forming an electrically programmable burn-in board in one embodiment and an electrically programmable device-under-test...
5801399 Semiconductor device with antireflection film  
A stress relaxation layer is inserted between an electrode layer and an antireflection layer to relax a stress imparted from one of the electrode and antireflection layers to the other. A...
5793094 Methods for fabricating anti-fuse structures  
A method for substantially reducing variations in a programming voltage of an anti-fuse structure formed on an integrated circuit wafer. The anti-fuse structure has a metal-one layer, an anti-fuse...
5789794 Fuse structure for an integrated circuit element  
A programmable fuse element disposed between integrated circuit elements that may be selectively joined during the manufacture or programming of an integrated circuit. The fuse element is a...
5789796 Programmable anti-fuse device and method for manufacturing the same  
The present invention relates to a technology of an electrically programmable anti-fuse device. The anti-fuse device comprises a semiconductor substrate provided with a plurality of functional...
5789764 Antifuse with improved antifuse material  
According to the present invention, an antifuse comprises first and second conductors separated by an antifuse material having a thickness selected to impart a desired target programming voltage to...
5789795 Methods and apparatus for fabricationg anti-fuse devices  
An integrated circuit having a semiconductor substrate and an anti-fuse structure formed on the semiconductor substrate. The anti-fuse structure includes a metal-one layer and an anti-fuse layer...
5780919 Electrically programmable interconnect structure having a PECVD amorphous silicon element  
In one method for forming amorphous silicon antifuses with significantly reduced leakage current, a film of amorphous silicon is formed in a antifuse via between two electrodes. The amorphous...
RE35828 Anti-fuse circuit and method wherein the read operation and programming operation are reversed  
The invention features a circuit wherein a serially connected transistor and anti-fuse element are biased for current to flow in a first direction or the current flows in the first direction during...
5770885 Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayers  
An antifuse may be fabricated as a part of an integrated circuit in a layer located above and insulated from the semiconductor substrate. The antifuse includes a lower first metal electrode, a...
5768179 Antifuse load sram cell  
An antifuse functions as a resistive element in an SRAM cell. The antifuse layer, typically amorphous silicon, is formed to a thickness commensurate with the resistance required for proper...
5763898 Above via metal-to-metal antifuses incorporating a tungsten via plug  
According to a first aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer under a plug of an electrically conductive...
5764563 Thin film load structure  
A resistive load structure and method for making a resistive load structure for an integrated circuit includes the use of an amorphous silicon "antifuse" material. The resistive load structure can...
5756367 Method of making a spacer based antifuse structure for low capacitance and high reliability  
The present antifuse includes a base having a first electrode thereon which defines a top surface and a side surface. Antifuse material is disposed on the first electrode on at least a portion of...
5751012 Polysilicon pillar diode for use in a non-volatile memory cell  
There is described a memory cell having a vertically oriented polysilicon pillar diode for use in delivering large current flow through a variable resistance material memory element. The pillar...
5741720 Method of programming an improved metal-to-metal via-type antifuse  
A metal-to-metal antifuse disposed between two aluminum metallization layers in a CMOS integrated circuit or similar structure includes an antifuse material layer having an aluminum-free conductive...
5726484 Multilayer amorphous silicon antifuse  
Antifuses are provided which include first and second conductive layers and an antifuse layer positioned between the first and second conductive layers. The antifuse layer includes at least one...
5717230 Field programmable gate array having reproducible metal-to-metal amorphous silicon antifuses  
A field programmable gate array has a programmable interconnect structure comprising metal signal conductors and metal-to-metal PECVD amorphous silicon antifuses. The metal-to-metal PECVD amorphous...
5714795 Semiconductor device utilizing silicide reaction  
A semiconductor storage device capable of high-speed writing and reading and having extremely high reliability. The semiconductor device includes a plurality of cells each having a semiconductor...
5705849 Antifuse structure and method for manufacturing it  
An improved antifuse design has been achieved by providing a structure comprising pair of alternating layers of silicon nitride and amorphous silicon sandwiched between two dual damascene...
5694047 Method and system for measuring antifuse resistance  
A method and system for measuring programmed antifuse resistance in an FPGA without disturbing the antifuse resistance. The method includes estimating a plurality of subparts of the programming...
5693556 Method of making an antifuse metal post structure  
A method of forming an antifuse device. According to the preferred method of the present invention, a first metal layer comprising a first bulk conductive layer and the top capping layer is formed....
5682049 Method and apparatus for trimming an electrical value of a component of an integrated circuit  
An integrated circuit and method for using same is constructed on a semiconductor substrate (15) with a structure (24) in the substrate (15) having an electrical value desired to be trimable and...
Matches 301 - 350 out of 532 < 1 2 3 4 5 6 7 8 9 10 11 >