Matches 251 - 300 out of 533 < 1 2 3 4 5 6 7 8 9 10 11 >
Match Document Document Title
6307213 Method for making a fuse structure for improved repaired yields on semiconductor memory devices  
This invention relates to a novel fuse structure and method for deleting redundant circuit elements on integrated circuits. This fuse structure is useful for increasing the repair yield on RAM...
6303970 Semiconductor device with a plurality of fuses  
In the present invention, a semiconductor device includes a first insulation layer formed on a semiconductor substrate, an elevating pad formed on the first insulation layer, a second insulation...
6294453 Micro fusible link for semiconductor devices and method of manufacture  
An electrically activated fuse with a high melting point heater element in series with a low melting point fusible link. The heater element has a higher resistivity and larger cross-sectional area...
6291871 Method of jointly forming stacked capacitors and antifuses, method of blowing antifuses, and antifuses and stacked capacitors constituting a part of integrated circuitry  
A method of jointly forming stacked capacitors and antifuses includes, a) providing a common layer of electrically conductive material to form both a capacitor storage node and an inner antifuse...
6285068 Antifuses and method of fabricating the same  
The present invention provides antifuses that enhance the efficiency of a field programmable gate array and that decrease chip size. The antifuses comprise a plurality of first conductive layers...
6281563 Laser programming of CMOS semiconductor devices using make-link structure  
A CMOS semiconductor device is programmed by a laser beam which causes a PN junction in a silicon substrate to be permanently altered. This produces a leakage path between a program node and a tank...
6278171 Sublithographic fuses using a phase shift mask  
A method for forming an interconnect wiring structure, such as a fuse structure, comprises forming an opening in an insulating layer using a phase shift mask (the opening having vertical sidewalls...
6274922 Fabrication of high power semiconductor device with a heat sink and integration with planar microstrip circuitry  
A low cost highly integrated method of fabricating a heat sink on the backside of a power semiconductor device maintains device performance, improves thermal transfer, and enables reliable planar...
6262434 Integrated circuit structures and methods to facilitate accurate measurement of the IC devices  
The present invention relates, in one embodiment, to an integrated circuit including a first circuit structure, a first conductive bonding pad coupled to the first circuit structure, a second...
6255700 CMOS semiconductor device  
A semiconductor device comprises a depletion-type NMOS transistor having a source region, a drain region connected to a power supply line, and a gate electrode connected to a ground line. An...
6255715 Fuse window guard ring structure for nitride capped self aligned contact processes  
The present invention provides a structure and method for forming a moisture barrier guard ring structure 38 44 48 52 54 for around a fuse window 30 in a semiconductor device. The invention begins...
6252293 Laser antifuse using gate capacitor  
An integrated circuit laser antifuse is described which has two physical states. In the first physical state the laser antifuse has to conductive plates electrically separated by a layer of...
6252291 Modifiable semiconductor circuit element  
An integrated circuit chip having a substrate with several overlaying metal layers. A lower metal layer is adjacent the substrate and an upper layer is spaced above the lower layer. The chip has...
6249472 Semiconductor memory device with antifuse  
The objective of the invention is to provide a type of semiconductor memory device whose antifuse can be formed without any additional film manufacturing process. A first electrode is formed by a...
6240033 Antifuse circuitry for post-package DRAM repair  
The anti-fuse circuit includes three sub-blocks: a multiplexer having inputs of control signals and addresses and yielding the activation of a programming signal and program addresses; a...
6222212 Semiconductor device having programmable interconnect layers  
An integrated circuit structure is described which includes a base semiconductor structure and a programmable semiconductor structure which are fabricated separately and later joined to form the...
6218722 Antifuse based on silicided polysilicon bipolar transistor  
An improved antifuse which employs the base-emitter junction of a silicided single polysilicon bipolar transistor. The distance between the base metal and emitter metal is shortened and results...
6188092 Solid imaging device having an antifuse element and method of making the same  
A solid imaging device including a substrate voltage generating device possessing high display quality, high reliability, and method of manufacturing. The solid imaging device includes a plurality...
6180994 Array of sidewall-contacted antifuses having diffused bit lines  
An array of sidewall-contacted antifuses is formed by a method that reduces the sensitivity of the array to masking alignment errors. The array includes a plurality of spaced-apart bit lines which...
6165851 Semiconductor nonvolatile storage and method of fabricating the same  
A semiconductor nonvolatile storage that is an inter-gate insulating film breakdown type memory is configured by providing a field oxide film on a semiconductor substrate 1, a gate electrode on the...
6163062 Semiconductor device having a metallic fuse member and cutting method thereof with laser light  
A semiconductor device has a plurality of fuse members (1a, 1b) composed of a metal that can be cut by laser light (4), disposed over a semiconductor substrate (5). The length L of the fuse members...
6160276 Double-sided programmable interconnect structure  
An interconnect structure is centered around a substrate having opposite first and second surfaces. Component contacts allocated to cells in the substrate, are provided over both substrate...
6150705 Dielectric-polysilicon-dielectric-polysilicon-dielectric antifuse for field programmable logic application  
A novel antifuse structure includes a novel antifuse material layer comprises a first dielectric layer, a first polysilicon layer (which may optionally be lightly doped) disposed over the first...
6144074 Semiconductor memory device having stack-type memory cells and a method for manufacturing the same  
At least one dummy storage node is formed for a plurality of storage nodes provided in stack type memory cells in which a plate electrode is grounded through the at least one dummy storage node,...
6140692 Isolated anti-fuse structure and method for fabricating same  
An improved anti-fuse structure is formed on a silicon substrate of a first conductivity type. The anti-fuse has a first conductive layer formed on a surface of the substrate, a dielectric layer...
6133570 Semiconductor photovoltaic diffractive resonant optical cavity infrared detector  
An infrared detector cell includes a plurality of uniformly spaced linear segments, which make up an optical grating. Each segment is selectively doped across its width to form a photovoltaic...
6130469 Electrically alterable antifuse using FET  
An integrated circuit and fabrication method for an antifuse structure that includes a shallow trench oxide isolation region disposed in a silicon substrate, the oxide in the trench having a top...
RE36893 Anti-fuse structure for reducing contamination of the anti-fuse material  
An anti-fuse structure formed in accordance with the present invention includes a conductive layer base. A layer of anti-fuse material overlies the conductive base layer. On top of the anti-fuse...
6127721 Soft passivation layer in semiconductor fabrication  
The use of an etch stop layer to define a terminal via opening to access a device feature after formation of a photosensitive soft-passivation layer. The etch stop layer allows the size of the...
6124194 Method of fabrication of anti-fuse integrated with dual damascene process  
A method of fabricating an anti-fuse module and dual damascene interconnect structure comprises the following steps. A semiconductor structure having at least two exposed metal lines covered by a...
6104079 Closely pitched polysilicon fuses and method of forming the same  
A method for decreasing the pitch of polysilicon fuses uses tungsten barriers formed adjacent to the fuse elements. The tungsten barriers are made compatible with the process to form a crack stop...
6097077 Programmable interconnect structures and programmable integrated circuits  
Antifuses and gate arrays with antifuses are disclosed that have high thermal stability, reduced size, reduced leakage current, reduced capacitance in the unprogrammed state, improved manufacturing...
6087677 High density self-aligned antifuse  
The present invention is an antifuse structure comprising an insulation layer between a top conductor and a bottom conductor. The insulation layer has a via. A resistive layer is adjacent the via...
6087707 Structure for an antifuse cell  
A structure for an antifuse cell which comprises: (a) field oxide between the bottom plate of the antifuse element and its access transistor; and (b) an implanted region underlying the antifuse...
6081021 Conductor-insulator-conductor structure  
An integrated circuit device including a conductor-insulator-conductor structure and a method of manufacturing the structure simultaneously while forming a dual damascene via. A first interconnect...
6057589 Method for over-etching to improve voltage distribution  
An over-etched (OE) antifuse includes a lower electrode, an antifuse layer contacting the lower electrode by an over-etched via, and a second conductive layer formed on the antifuse layer. This...
6054749 Thin film device repaired using enhanced repair process  
A process for partially repairing defective Multi-Chip Module (MCM) Thin-Film (TF) wiring nets. The process comprises the steps of locating a short circuit between any two nets of the MCM,...
6051851 Semiconductor devices utilizing silicide reaction  
Cheap semiconductor memory devices are provided so as to enable high-speed writing and reading but rarely to malfunction, thus being high in reliability. In a semiconductor device which comprises a...
6046488 Semiconductor device having conductive layer and manufacturing method thereof  
A semiconductor device allowing the manufacturing process to be simplified and fine structures therein to be readily formed and a manufacturing method thereof are provided. In the semiconductor...
6031275 Antifuse with a silicide layer overlying a diffusion region  
The large voltage required to program a conventional antifuse is substantially reduced by forming the antifuse with a diffusion region and an overlying layer of silicide. The silicide layer is...
6025637 Spacer-based antifuse structure for low capacitance and high reliability and method of fabrication thereof  
The present antifuse includes a base having a first electrode thereon which defines a top surface and a side surface. Antifuse material is disposed on the first electrode on at least a portion of...
6016001 Metal to amorphous silicon to metal anti-fuse structure  
An anti-fuse structure and method for forming such structure. In one embodiment, the anti-fuse structure of the present invention includes a dielectric layer which is deposited over a metal layer....
6008716 Fuse structure connecting first level and second level interconnections in inter-layer insulator  
The present invention provides a fuse structure formed in an inter-layer insulator having a first level interconnection and a second level interconnection isolated by the inter-layer insulator from...
6002261 Trimming circuit  
To monitor the state of an antifuse capacitor, a transistor is connected to the capacitor such that it saturates only when the capacitor is not blown. Monitoring the base current of the transistor...
5994757 Electronic circuit device capable for use as a memory device  
An electronic circuit device includes first and second conductors and a high-resistance member arranged therebetween. The high-resistance member consists of a material which changes from a high...
5986322 Reduced leakage antifuse structure  
An antifuse comprises an antifuse material disposed between a lower conductive electrode and an upper conductive electrode. The antifuse material comprises a layer of amorphous silicon disposed...
5973380 Semiconductor junction antifuse circuit  
An integrated semiconductor junction antifuse is formed from either adjacent regions of opposite doping types or spaced apart regions of similar doping type within a substrate. In its unblown...
5969386 Aluminum gates including ion implanted composite layers  
An aluminum gate for a thin film transistor is fabricating by implanting ions into the exposed surface of the aluminum gate. The ions are preferably selected from the group consisting of nitrogen,...
5969403 Physical fuse for semiconductor integrated circuit  
A fuse for an integrated circuit is constituted by a shallow NP junction, covered with a metal contact, the semiconductor region being not excessively doped. For the blowing of the fuse, the...
5965270 Metal/amorphous material/metal antifuse structure with a barrier enhancement layer  
An amorphous-silicone-based antifuse structure has been invented for VLSI (Very Large Scale Integration circuits) FPGA's (Fields Programmable Gate Array) applications. The structure comprises from...
Matches 251 - 300 out of 533 < 1 2 3 4 5 6 7 8 9 10 11 >