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7619240 |
Semiconductor photodetector, device for multispectrum detection of electromagnetic radiation using such a photodetector and method for using such a device
This semiconductor photodetector consists of a diode with at least two heterojunctions comprising two external layers, a first layer with a given kind or type of doping and a second layer with a...
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7615730 |
Device and method for measuring wavelength of an optical signal
A wavelength meter, an associated method, and system are generally described. In one example, an apparatus includes a photodiode to receive an optical signal and to generate a photocurrent upon...
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7572668 |
Method of patterning an organic thin film, an organic thin film transistor, a method of manufacturing an organic thin film transistor, and an organic electroluminescence display device having the organic thin film transistor
Provided is a method of patterning an organic thin film which can prevent surface damage of an organic semiconductor layer. Also, an organic thin film transistor that can reduce an off-current and...
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7566905 |
Electro-optical apparatus, method for manufacturing electro-optical apparatus, and electronic device
An electro-optical apparatus includes a base, a resin film on the base, the resin film having at least one of projections and depressions at an upper surface thereof, and a light reflecting film...
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7525168 |
CMOS sensor with electrodes across photodetectors at approximately equal potential
A MOS or CMOS based active pixel sensor designed for operation with zero or close to zero potential across the pixel photodiodes to minimize or eliminate dark current. In preferred embodiments the...
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7525131 |
Photoelectric surface and photodetector
Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride...
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7521724 |
Light emitting diode package and process of making the same
A light emitting diode (LED) package and process of making the same includes a silicon-on-insulator (SOI) substrate that is composed of two silicon based materials and an insulation layer...
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7492988 |
Ultra-compact planar AWG circuits and systems
Planar AWG circuits and systems are disclosed that use air trench bends to increase planar circuit compactness.
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7492901 |
Single-photon generator and single-photon generating method
A single-photon generator includes an exciton generation part including therein a quantum dot, an excitation part for generating an exciton in the exciton generator part, a recombination control...
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7429750 |
Solid-state element and solid-state element device
A solid-state element has: a semiconductor layer formed on a substrate, the semiconductor layer having a first layer that corresponds to an emission area of the solid-state element to and a second...
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7420207 |
Photo-detecting device and related method of formation
A photo-detecting device includes a buried doping layer of a first conductivity type and disposed at an upper portion of a silicon substrate. A first silicon epitaxial layer of first conductivity...
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7397067 |
Microdisplay packaging system
Some embodiments provide a microdisplay integrated circuit (IC), a substantially transparent protective cover coupled to the microdisplay IC, and a base coupled to the microdisplay IC. Thermal...
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7397066 |
Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers
Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a...
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7387952 |
Semiconductor substrate for solid-state image pickup device and producing method therefor
A semiconductor substrate for forming a pixel area provided surfacially with a plurality of pixels for photoelectric conversion, the semiconductor substrate, including a polysilicon film of a...
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7368750 |
Semiconductor light-receiving device
A semiconductor light-receiving device includes: a semi-insulating substrate; a semiconductor layer of a first conduction type that is formed on the semi-insulating substrate; a buffer layer of the...
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7361930 |
Method for forming a multiple layer passivation film and a device incorporating the same
A method of forming a multiple layer passivation film on a semiconductor device surface comprises placing a semiconductor device in a chemical vapor deposition reactor, introducing a nitrogen...
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7354857 |
Method of making iron silicide and method of making photoelectric transducer
A solar cell comprises a substrate, and a metal electrode layer, a p-i-n junction, and a transparent electrode layer which are successively laminated on the substrate. The p-i-n junction comprises...
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7352044 |
Photoelectric transducer, photoelectric transducer apparatus, and iron silicide film
A solar battery 10 comprises a metal electrode layer 12 , a pin junction 100 , and a transparent electrode layer 16 which are successively laminated on a substrate 11 such as a silicon...
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7329942 |
Array-type modularized light-emitting diode structure and a method for packaging the structure
An array-type modularized light-emitting diode structure and a method for packaging the structure. The array-type modularized light-emitting diode structure includes a lower substrate and an upper...
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7323759 |
Photosensor for a transmitted light method used for detecting the direction of movement of intensity maxima and intensity minima of an optical standing wave
A photosensor for a transmitted-light method for detecting the intensity profile of an optical standing wave, with a transparent substrate, with a semiconductor component, and with at least three...
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7315054 |
Decoupling capacitor density while maintaining control over ACLV regions on a semiconductor integrated circuit
In one embodiment, a method of controlling the across-chip line-width variation (ACLV) on a semiconductor integrated circuit includes forming an ACLV controlled region including a plurality of...
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7288788 |
Predoped transfer gate for an image sensor
A novel Active Pixel Sensor (APS) cell structure and method of manufacture. Particularly, an image sensor APS cell having a predoped transfer gate is formed that avoids the variations of V t as a...
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7285796 |
Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels
An image pixel cell with a doped, hydrogenated amorphous silicon photosensor, raised above the surface of a substrate is provided. Methods of forming the raised photosensor are also disclosed....
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7259406 |
Semiconductor optical element
A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant...
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RE39780 |
Photoelectric converter, its driving method, and system including the photoelectric converter
A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric...
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7214971 |
Semiconductor light-receiving device
A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a...
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7214570 |
Encapsulating a device
An encapsulation for an electrical device is disclosed. A cap support is provided in the non-active regions of the device to prevent the package from contacting the active components of the device...
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7202511 |
Near-infrared visible light photon counter
Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1–2 microns by coupling an absorber layer having high quantum efficiency in the spectral...
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7199395 |
Photovoltaic cell and method of fabricating the same
An i-type amorphous silicon film and an anti-reflection film made of amorphous silicon nitride or the like are formed in this order on a main surface of an n-type single-crystalline silicon...
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7199303 |
Optical energy conversion apparatus
An optical energy conversion apparatus 10 includes a first impurity doped semiconductor layer 5 , formed on a substrate, and which is of a semiconductor material admixed with a first impurity,...
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7186020 |
Thermal interface material (TIM) with carbon nanotubes (CNT) and low thermal impedance
According to embodiments of the present invention, a very thin thermal interface material (TIM) is developed, which is composed of carbon nanotubes, silicon thermal grease, and chloroform. The...
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7135698 |
Multi-spectral infrared super-pixel photodetector and imager
A multi-spectral super-pixel photodetector for detecting four or more different bands of infrared radiation is described. The super-pixel photodetector includes two or more sub-pixel...
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RE39393 |
Device for reading an image having a common semiconductor layer
A device for reading an image (an image reading device) according to this invention comprises therein at least one photoelectric conversion semiconductor device provided on a substrate and at least...
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7132598 |
Hole transporting agents and photoelectric conversion device comprising the same
A photoelectric conversion device comprising a semiconductor and an organic electrically conducting agent, wherein the organic electrically conducting agent exhibits a melting temperature T m ...
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7115925 |
Image sensor and pixel having an optimized floating diffusion
An active pixel includes a a photosensitive element formed in a semiconductor substrate. A transfer transistor is formed between the photosensitive element and a floating diffusion and selectively...
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7102185 |
Lightshield architecture for interline transfer image sensors
An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a...
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7102159 |
Ultra thin image sensor package structure and method for fabrication
An image sensor package having at least one chip supporting bar secured to a top surface of an image sensor chip. The thickness of the chip supporting bar is absorbed within a vertical dimension of...
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7057222 |
Magnetic memories with bit lines and digit lines that intersect at oblique angles and fabrication methods thereof
A magnetic memory includes digit lines, bit lines, and magnetic tunnel junctions (MTJs) that are between the bits lines and the digit lines. The digit lines intersect the bit lines at an oblique...
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7042008 |
Image sensor and method of manufacturing the same
An image sensor has a CdTe plate, a plurality of hole-type electrodes, and a voltage-applying unit. The hole-type electrodes are arranged at predetermined intervals in the direction of thickness....
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7038238 |
Semiconductor device having a non-single crystalline semiconductor layer
A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate...
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7034333 |
Semiconductor sensor, comprising a pixel structure and the use of said sensor in a vacuum system
A semiconductor sensor for direct detection of electrons has a pixel structure in which a capacitance is designed to each pixel that stores a charge and converts the charge into a readable voltage....
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7030551 |
Area sensor and display apparatus provided with an area sensor
An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices....
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7026654 |
Package for optical semiconductor
To provide a package for an optical semiconductor having a light-emitting device and a light-receiving device in one package, in which a groove is provided between the light-emitting device and the...
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6967349 |
Method for fabricating a multi-level integrated circuit having scatterometry test structures stacked over same footprint area
The present invention describes a plurality of scatterometry test structures for use in process control during fabrication of a semiconductor wafer having multilevel integrated circuit chips, many...
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6963120 |
Photovoltaic element
A photovoltaic element is provided which has a high conversion efficiency, a low-cost producibility, a light weight and good overall characteristics in a final product form with a transparent...
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6951689 |
Substrate with transparent conductive layer, and photovoltaic element
The present invention provides a substrate with a transparent conductive layer comprising at least one layer stacked on a supporting substrate, wherein the surface of the transparent conductive...
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6911594 |
Photovoltaic device
A photovoltaic device including a plurality of unit devices stacked, each unit device comprising a silicon-based non-single-crystal semiconductor material and having a pn or pin structure, in which...
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6909161 |
Photodiode
A photodiode has an optical absorption layer composed of a depleted first semiconductor optical absorption layer with a layer width W D and a p-type neutral second semiconductor optical absorption...
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6894359 |
Sensitivity control for nanotube sensors
Nanostructure sensing devices for detecting an analyte are described. The devices include nanostructures connected to conductive elements, all on a substrate. Contact regions adjacent to points of...
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6891193 |
MRAM field-inducing layer configuration
A magnetic random access memory (MRAM) device is provided which includes a conductive line configured to induce a magnetic field with a higher magnitude along at least a portion of a magnetic cell...
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