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7619295 |
Pinched poly fuse
An electrical fuse has a region of a first conductivity type in a continuous type polysilicon of a second conductivity type that is opposite the first conductivity type. In one embodiment of the...
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7619269 |
Semiconductor device, manufacturing process thereof and imaging device
A semiconductor device including a pixel region in which one or more pixels are formed and a DRAM cell region in which one or more DRAM cells for storing output signals from the pixels are formed,...
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7619264 |
Semiconductor device
An electric fuse includes a wide interconnect and a narrow interconnect. The electric fuse has a juxtaposed region in which a plurality of straight line portions are juxtaposed with each other by...
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7615771 |
Memory array having memory cells formed from metallic material
Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality...
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7612448 |
Power module having a cooling device and semiconductor devices mounted on a resin substrate, method of producing same, and air conditioner
A power module includes a power semiconductor, a non-power semiconductor, one resin substrate, and a cooling device. The power semiconductor and the non-power semiconductor configure a power supply...
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7608910 |
Semiconductor ESD device and methods of protecting a semiconductor device
A semiconductor device and methods for protecting a semiconductor device. In an example, the semiconductor device may include a semiconductor substrate including at least one electrostatic...
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7605444 |
Fuse box reducing damage caused by laser blowing and cross talk
Provided are a fuse box that simultaneously prevents damage caused by laser blowing and cross talk between the fuses and a method of manufacturing the same. In a fuse box having an open region in...
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7602042 |
Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same
A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a diode structure disposed on the resistor structure, and an upper electrode disposed...
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7602041 |
Input protection circuit preventing electrostatic discharge damage of semiconductor integrated circuit
An input protection circuit comprises a semiconductor chip, an internal circuit disposed on the semiconductor chip, a first input/output terminal which is disposed on the semiconductor chip and...
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7602040 |
Semiconductor device and a method of manufacturing the same
In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a...
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7602039 |
Programmable capacitor associated with an input/output pad
The present invention provides a method and apparatus for a programmable capacitor associated with an input/output pad in the semiconductor device. The apparatus includes a semiconductor die having...
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7602026 |
Memory cell, semiconductor memory device, and method of manufacturing the same
A memory cell in a semiconductor memory device comprises a variable resistor element configured so that a variable resistor body is sandwiched between a first electrode and a second electrode, and...
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7598749 |
Integrated circuit with fuse programming damage detection
An integrated circuit with an efuse having an efuse link includes a damage detection structure disposed in relation to the efuse so as to detect damage in the IC resulting from programming the...
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7598537 |
Semiconductor device
A semiconductor device comprises one or two semiconductor chips, each including an input circuit having a wiring ( 3 ) for connecting an input pad ( 2 ) to an inner circuit, a first electrostatic...
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7589363 |
Fuse structures, methods of making and using the same, and integrated circuits including the same
A structure configured to disconnect circuit elements. The structure generally includes a dielectric layer over a light-absorbing structure, and a lens over the dielectric layer and the...
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7586777 |
Resistance variable memory with temperature tolerant materials
A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichometric formula of about Sb 2 Se 3 , and a metal-chalcogenide layer and methods of...
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7579266 |
Fuse structure for semiconductor integrated circuit with improved insulation film thickness uniformity and moisture resistance
When the film thickness of an insulating film on a fuse connected to a circuit is not uniform within a wafer surface, there was a problem that disconnection of the fuse might become insufficient...
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7576408 |
Fuse box, method of forming a fuse box, and fuse cutting method
A fuse of a fuse box includes a fuse line with a plurality of sub-fuse lines. A fuse cutting method involves selectively cutting sub-fuse lines of a fuse line.
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7576407 |
Devices and methods for constructing electrically programmable integrated fuses for low power applications
Electrically programmable integrated fuses are provided for low power applications. Integrated fuse devices have stacked structures with a polysilicon layer and a conductive layer formed on the...
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7576380 |
Methods for enhancing capacitors having roughened features to increase charge-storage capacity
Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the...
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7576374 |
Semiconductor device with robust polysilicon fuse
A new method is provided to create a polysilicon fuse. The invention provides for applying a first oxide plasma treatment to the surface of the created polysilicon fuse, creating a thin layer of...
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7573118 |
MOS electric fuse, its programming method, and semiconductor device using the same
A programming method of a MOS electric fuse including preparing, as a fuse element, a MOS transistor which has a first impurity region and a second impurity region, both of a second conductivity...
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7572682 |
Semiconductor structure for fuse and anti-fuse applications
A fuse/anti-fuse structure is provided in which programming of the anti-fuse is caused by an electromigation induced hillock that is formed adjacent to the fuse element. The hillock ruptures a thin...
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7569907 |
Hybrid chip fuse assembly having wire leads and fabrication method therefor
A chip fuse includes a substrate, a fuse element extending on the substrate, and first and second wire leads coupled to the fuse element. Contact pads may extend over portions of the fuse element...
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7557424 |
Reversible electric fuse and antifuse structures for semiconductor devices
A structure and method of fabricating reversible fuse and antifuse structures for semiconductor devices is provided. In one embodiment, the method includes forming at least one line having a via...
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7556989 |
Semiconductor device having fuse pattern and methods of fabricating the same
A semiconductor device includes a semiconductor substrate having a fuse region and an interconnection region, a first insulating layer formed in the fuse region and the interconnection region, a...
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7550817 |
Semiconductor device having fuse with protection capacitor
A semiconductor device has a fuse, an internal circuit and a protection capacitor. The fuse has a first terminal connected to be applied to a fixed voltage and a second terminal. The internal...
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7550789 |
Using electrically programmable fuses to hide architecture, prevent reverse engineering, and make a device inoperable
Techniques and systems whereby operation of and/or access to particular features of an electronic device may be controlled after the device has left the control of the manufacturer are provided....
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7550788 |
Semiconductor device having fuse element arranged between electrodes formed in different wiring layers
A semiconductor device includes a lower electrode, an upper electrode, and a fuse element that connects the lower electrode and the upper electrode. The height of the fuse element is greater than...
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7544992 |
Illuminating efficiency-increasable and light-erasable embedded memory structure
An illuminating efficiency-increasable and light-erasable embedded memory structure including a substrate, a memory device, many dielectric layers, many cap layers and at least three metal layers...
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7544543 |
Semiconductor device with capacitor and fuse, and method for manufacturing the same
A semiconductor device with a capacitor and a fuse, and a method for manufacturing the same are described. The semiconductor device comprises a semiconductor substrate having a capacitor region and...
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7541676 |
Fuse-structure
A metal layer structure is disclosed. The metal layer structure includes a substrate, a first dielectric layer on a surface of the substrate, and at least one first conductor and at least one...
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7538410 |
Fuse structure window
The present invention provides a fuse structure. The fuse structure comprises a substrate, a plurality of conductive layers, a plurality of dielectric layers and a plurality of conductive plugs....
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7538369 |
Resistance-change-type fuse circuit
A resistance-change-type fuse circuit has a plurality of polysilicon fuses which are made of polysilicon and causes irreversible change in resistance by flowing a current; a plurality of...
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7535078 |
Semiconductor device having a fuse and method of forming thereof
A fuse ( 43 ) is formed overlying a passivation layer ( 35 ) and under a packaging material ( 55, 70 ). In one embodiment, a fuse ( 43 ) is blown before the packaging material ( 55, 70 ) is formed....
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7529147 |
Semiconductor device and method of fabricating the same
The semiconductor device has a semiconductor substrate; an electric fuse provided on the semiconductor substrate, and having a first fuse link and a second fuse link connected in series; and a...
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7518212 |
Graded GexSe100-x concentration in PCRAM
The present invention provides a design for a PCRAM element which incorporates multiple metal-containing germanium-selenide glass layers of diverse stoichiometries. The present invention also...
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7518211 |
Chip and package structure
The invention is directed to a chip comprising a substrate having a plurality of pads located thereon and a passivation layer located over the substrate, wherein the passivation layer has a...
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7517762 |
Semiconductor device capable of preventing moisture-absorption of fuse area thereof and method for manufacturing the fuse area
A fuse area of a semiconductor device capable of preventing moisture-absorption and a method for manufacturing the fuse area are provided. When forming a guard ring for preventing permeation of...
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7511355 |
Semiconductor device having fuse element
In a semiconductor device including a switching element and a fuse element which is connected in series with the switching element and which melts and blows out as a result of an electric current...
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7498655 |
Probe-based memory
Apparatuses, a method, and a system for a non-volatile, probe-based memory device are disclosed herein. In various embodiments, probe-based memory may be one-time programmable or rewritable...
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7495310 |
Fuse-data reading circuit
A fuse-data reading circuit is provided in a semiconductor integrated circuit device. In the fused-data reading circuit, a differential latch circuit compares a current depending on the resistance...
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7495309 |
Semiconductor device and manufacturing method thereof
A redundant fuse is provided with a redundant length, here a winding structure, at one end thereof, here at a vicinity of a second wire side to which a high voltage (Vcc) is impressed. A...
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7492032 |
Fuse regions of a semiconductor memory device and methods of fabricating the same
A device and method of manufacturing a fuse region are disclosed. The fuse region may include an interlayer insulating layer formed on a substrate, a plurality of fuses disposed on the interlayer...
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7491965 |
Heat-shielded low power PCM-based reprogrammable eFUSE device
An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the...
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7489230 |
Semiconductor device and method of manufacturing the same
A semiconductor device includes a first insulating layer, which is formed on a semiconductor substrate (not shown), and formed with a concave portion, and an electric fuse which has a conductive...
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7485944 |
Programmable electronic fuse
A programmable device (eFuse), includes: a substrate ( 10 ); an insulator ( 13 ) on the substrate; an elongated semiconductor material ( 12 ) on the insulator, the elongated semiconductor material...
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7479689 |
Electronically programmable fuse having anode and link surrounded by low dielectric constant material
An electronically programmable fuse (e-fuse) is disclosed. In one embodiment, the e-fuse includes a cathode surrounded only by silicon dioxide; an anode; and a polysilicon-silicide programmable...
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7479447 |
Method of forming a crack stop void in a low-k dielectric layer between adjacent fuses
A crack stop void is formed in a low-k dielectric layer between adjacent fuse structures for preventing propagation of cracks between the adjacent fuse structures during a fuse blow operation. The...
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7473319 |
Apparatus and method for manufacturing semiconductor device incorporating fuse elements
An apparatus and a method for manufacturing semiconductor devices is disclosed for selectively disconnecting a fuse element out of plural fuse elements formed on a semiconductor wafer substrate...
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