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8184465 |
Programmable semiconductor device
A programmable device includes a substrate (10); an insulator (13) on the substrate; an elongated semiconductor material (12) on the insulator, the elongated semiconductor material having first and...
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8183665 |
Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
A high-density memory array. A plurality of word lines and a plurality of bit lines are arranged to access a plurality of memory cells. Each memory cell includes a first conductive terminal and an...
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8178942 |
Electrically alterable circuit for use in an integrated circuit device
An electrically alterable circuit (EAC), suitable for use in an integrated circuit, includes a first interconnect, a link element, and a second interconnect. A first set of interconnect vias...
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8178906 |
Laser chalcogenide phase change device
A laser activated phase change device for use in an integrated circuit comprises a chalcogenide fuse configured to connect a first patterned metal line and a second patterned metal line and...
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8178943 |
Electrical fuse, semiconductor device and method of disconnecting electrical fuse
An electrical fuse including a polysilicon layer; a silicide layer formed over the polysilicon layer; and a first metal contact and a second metal contact arranged over the silicide layer, while...
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8178944 |
Method for forming a one-time programmable metal fuse and related structure
According to one exemplary embodiment, a method for forming a one-time programmable metal fuse structure includes forming a metal fuse structure over a substrate, the metal fuse structure including...
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8174091 |
Fuse structure
An electrical fuse and a method of forming the same are presented. A first-layer conductive line is formed over a base material. A via is formed over the first-layer conductive line. The via...
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8174010 |
Unified test structure for stress migration tests
A unified test structure which is applicable for all levels of a semiconductor device including a current path chain having a first half chain and a second half chain, wherein each half chain...
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8169049 |
Semiconductor device with fuse portion
A semiconductor device includes: a plurality of NAND memory dies each including: a first wiring layer formed in the NAND memory die; a second wiring layer formed in the NAND memory die; a first...
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8169321 |
Radio frequency-enabled electromigration fuse
Embodiments of the invention provides a method, device, and system for programming an electromigration fuse (eFuse) using a radio frequency (RF) signal. A first aspect of the invention provides a...
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8168450 |
Semiconductor package, stacked semiconductor package having the same, and a method for selecting one semiconductor chip in a stacked semiconductor package
A semiconductor package includes a semiconductor chip having a circuit section. A first chip selection electrode passes through a first position of the semiconductor chip, and the first chip...
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8163640 |
Metal gate compatible electrical fuse
A dielectric material layer is formed on a metal gate layer for a metal gate electrode, and then lithographically patterned to form a dielectric material portion, followed by formation of a...
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8164156 |
Fuse structure for high integrated semiconductor device
A semiconductor device comprises a fuse having a blowing region at a center part for selectively connecting different two terminals; and a dummy contact positioned under the blowing region for...
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8164091 |
Multi-purpose poly edge test structure
Multi-purpose poly edge test structure. According to an embodiment, the present invention provides a test structure. The test structure includes a doped silicon substrate, the doped silicon...
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8164085 |
Semiconductor device and production method thereof
A method of fabricating a semiconductor device is disclosed that is able to suppress a short channel effect and improve carrier mobility. In the method, trenches are formed in a silicon substrate...
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8164120 |
Semiconductor device with capacitor and fuse and its manufacture
An upper electrode of a capacitor has a two-layer structure of first and second upper electrodes. A gate electrode of a MOS field effect transistor and a fuse are formed by patterning conductive...
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8159040 |
Metal gate integration structure and method including metal fuse, anti-fuse and/or resistor
A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device located and formed upon an active region of a semiconductor substrate and at least...
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8159041 |
Semiconductor device and manufacturing method thereof
A semiconductor device includes: a lower layer interconnection formed on a chip; an upper layer interconnection formed in an upper layer above the lower layer interconnection above the chip; an...
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8143692 |
Capacitance trimming circuit of semiconductor device having vertically stacked capacitor layers and operation method thereof
A capacitance trimming circuit of a semiconductor device may include a plurality of capacitor layers and/or a plurality of fuses. The plurality of capacitor layers may be vertically stacked. The...
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8143694 |
Fuse device
Implementations are presented herein that relate to a fuse device, an integrated circuit including a fuse device, a method of implementing a fuse device and a method of programming a fuse device.
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8143695 |
Contact fuse one time programmable memory
A fuse structure for a semiconductor integrated circuit (IC) can include a first node comprising a region of a metal layer of an IC manufacturing process and a second node comprising a region of a...
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8143693 |
Semiconductor device including redistribution line structure and method of fabricating the same
The invention provides a semiconductor device. The semiconductor device includes a semiconductor chip having an active surface on which pads are disposed, a passivation layer pattern disposed to...
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8133766 |
Fuse of semiconductor device and method of forming the same
A fuse of a semiconductor device includes first fuse metals formed over an underlying structure and a second fuse metal formed between the first fuse metals. Accordingly, upon blowing, the fuse...
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8134220 |
Two-terminal nanotube devices including a nanotube bridge and methods of making same
Nanotube switching devices having nanotube bridges are disclosed. Two-terminal nanotube switches include conductive terminals extending up from a substrate and defining a void in the substrate....
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8129627 |
Circuit board having semiconductor chip
A circuit board includes a semiconductor chip having an upper surface and side surfaces connected to the upper surface. A bonding pad is disposed on the upper surface of the semiconductor chip. A...
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8130509 |
Package carrier
A package carrier including a substrate, at least an under bump metallurgic (UBM) layer and at least a conductive bump is provided. The substrate has a conductive structure and at least a pad...
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8129624 |
Pressure sensor
A pressure sensor includes a sense element port, a support ring and a plurality of interference fit slits to provide a flexible interference fit between the sense element port and the support ring...
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8120141 |
Method and structure to prevent circuit network charging during fabrication of integrated circuits
An integrated circuit and method of fabricating the integrated circuit. The integrated circuit, including: one or more power distribution networks; one or more ground distribution networks; one or...
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8120083 |
Polymer-based ferroelectric memory
Apparatus and systems may comprise electrode structures that include two or more dissimilar and abutting metal layers on a surface, some of the electrode structures separated by a gap; and a...
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8115274 |
Fuse structure and method for manufacturing same
A fuse structure includes a substrate, a fuse conductive trace disposed closer to a first chip surface than to a second chip surface facing away from the first chip surface, a metallization layer...
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8110893 |
Semiconductor device mounted with fuse memory
A fuse element utilizing a reaction between two layers by feeding current is manufactured. A fuse element including a first layer formed of an oxide or a nitride and a second layer that becomes...
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8110892 |
Semiconductor device having a plurality of repair fuse units
A semiconductor device includes a plurality of stacked semiconductor chips; and a plurality of through-silicon vias (TSVs) including first TSVs and redundant TSVs and configured to commonly...
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8106476 |
Semiconductor die with fuse window and a monitoring window over a structure which indicates fuse integrity
According to one exemplary embodiment, a method for monitoring structural integrity of at least one fuse in semiconductor wafer, which includes at least one electrical monitoring structure,...
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8101985 |
Capacitors and methods of manufacture thereof
Capacitors are formed in metallization layers of semiconductor device in regions where functional conductive features are not formed, more efficiently using real estate of integrated circuits. The...
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8102019 |
Electrically programmable diffusion fuse
A fuse structure for a semiconductor integrated circuit (IC) includes an anode comprising conductive material overlaying a diffusion material disposed within a substrate layer of the IC, wherein...
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8102023 |
Capacitor insulating film, capacitor, and semiconductor device
A capacitor insulating film for use as an insulating film sandwiched between two electrodes is made of a crystal containing a hafnium element in a titanium site in place of a part of titanium...
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8102018 |
Nonvolatile resistive memories having scalable two-terminal nanotube switches
A non-volatile resistive memory is provided. The memory includes at least one non-volatile memory cell and selection circuitry. Each memory cell has a two-terminal nanotube switching device having...
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8101505 |
Programmable electrical fuse
The present invention relates to e-fuse devices, and more particularly to a device and method of forming an e-fuse device, the method comprising providing a first conductive layer connected to a...
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8101977 |
Ballasted polycrystalline fuse
A polycrystalline fuse includes a first layer of polycrystalline material on a substrate and a second layer of a silicide material on the first layer. The first and second layers are shaped to form...
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8097931 |
Fuse part in semiconductor device and method for forming the same
A fuse part in a semiconductor device has a plurality of fuse lines extended along a first direction with a given width along a second direction. The fuse part includes a first conductive pattern...
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8093680 |
Metal-insulator-metal-insulator-metal (MIMIM) memory device
The present memory device includes first and second electrodes, first and second insulating layers between the electrodes, the first insulating layer being in contact with the first electrode, the...
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8093577 |
Three-dimensional phase-change memory array
A three-dimensional phase-change memory array. In one embodiment of the invention, the memory array includes a first plurality of diodes, a second plurality of diodes disposed above the first...
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8089105 |
Fuse link structures using film stress for programming and methods of manufacture
A method of forming a programmable fuse structure includes forming at least one shallow trench isolation (STI) in a substrate, fanning an e-fuse over the at least one STI and depositing an...
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8080860 |
Semiconductor device and method of blowing fuse thereof
A semiconductor device comprises an active region including a core circuit forming region and a buffer forming region, and a fuse element forming region arranged on a corner of the active region...
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8080861 |
Semiconductor device
A semiconductor device includes an electric fuse and first and second large area wirings for applying a voltage to the electric fuse. The electric fuse includes a fuse unit which includes an...
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8076760 |
Semiconductor fuse arrangements
The invention includes semiconductor fuse arrangements containing an electrically conductive plate over and in electrical contact with a plurality of electrically conductive links. Each of the...
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8076751 |
Circuit protection device including resistor and fuse element
An integral circuit protection device includes a substrate disposed between first and second terminals. The substrate is composed of a resistive material. A first conductive layer is disposed on a...
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8071396 |
Embedded phase-change memory and method of fabricating the same
An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and...
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8067815 |
Aluminum copper oxide based memory devices and methods for manufacture
Memory devices are described along with methods for manufacturing. A memory device as described herein includes a first electrode and a second electrode. The memory device further includes a diode...
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8058702 |
Phase change memory cell
A phase change memory cell is disclosed, including a first electrode and a second electrode, and a plurality of recording layers disposed between the first and second electrodes. The phase of an...
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