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7619295 Pinched poly fuse  
An electrical fuse has a region of a first conductivity type in a continuous type polysilicon of a second conductivity type that is opposite the first conductivity type. In one embodiment of the...
7619269 Semiconductor device, manufacturing process thereof and imaging device  
A semiconductor device including a pixel region in which one or more pixels are formed and a DRAM cell region in which one or more DRAM cells for storing output signals from the pixels are formed,...
7619264 Semiconductor device  
An electric fuse includes a wide interconnect and a narrow interconnect. The electric fuse has a juxtaposed region in which a plurality of straight line portions are juxtaposed with each other by...
7615771 Memory array having memory cells formed from metallic material  
Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality...
7612448 Power module having a cooling device and semiconductor devices mounted on a resin substrate, method of producing same, and air conditioner  
A power module includes a power semiconductor, a non-power semiconductor, one resin substrate, and a cooling device. The power semiconductor and the non-power semiconductor configure a power supply...
7608910 Semiconductor ESD device and methods of protecting a semiconductor device  
A semiconductor device and methods for protecting a semiconductor device. In an example, the semiconductor device may include a semiconductor substrate including at least one electrostatic...
7605444 Fuse box reducing damage caused by laser blowing and cross talk  
Provided are a fuse box that simultaneously prevents damage caused by laser blowing and cross talk between the fuses and a method of manufacturing the same. In a fuse box having an open region in...
7602042 Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same  
A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a diode structure disposed on the resistor structure, and an upper electrode disposed...
7602041 Input protection circuit preventing electrostatic discharge damage of semiconductor integrated circuit  
An input protection circuit comprises a semiconductor chip, an internal circuit disposed on the semiconductor chip, a first input/output terminal which is disposed on the semiconductor chip and...
7602040 Semiconductor device and a method of manufacturing the same  
In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a...
7602039 Programmable capacitor associated with an input/output pad  
The present invention provides a method and apparatus for a programmable capacitor associated with an input/output pad in the semiconductor device. The apparatus includes a semiconductor die having...
7602026 Memory cell, semiconductor memory device, and method of manufacturing the same  
A memory cell in a semiconductor memory device comprises a variable resistor element configured so that a variable resistor body is sandwiched between a first electrode and a second electrode, and...
7598749 Integrated circuit with fuse programming damage detection  
An integrated circuit with an efuse having an efuse link includes a damage detection structure disposed in relation to the efuse so as to detect damage in the IC resulting from programming the...
7598537 Semiconductor device  
A semiconductor device comprises one or two semiconductor chips, each including an input circuit having a wiring ( 3 ) for connecting an input pad ( 2 ) to an inner circuit, a first electrostatic...
7589363 Fuse structures, methods of making and using the same, and integrated circuits including the same  
A structure configured to disconnect circuit elements. The structure generally includes a dielectric layer over a light-absorbing structure, and a lens over the dielectric layer and the...
7586777 Resistance variable memory with temperature tolerant materials  
A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichometric formula of about Sb 2 Se 3 , and a metal-chalcogenide layer and methods of...
7579266 Fuse structure for semiconductor integrated circuit with improved insulation film thickness uniformity and moisture resistance  
When the film thickness of an insulating film on a fuse connected to a circuit is not uniform within a wafer surface, there was a problem that disconnection of the fuse might become insufficient...
7576408 Fuse box, method of forming a fuse box, and fuse cutting method  
A fuse of a fuse box includes a fuse line with a plurality of sub-fuse lines. A fuse cutting method involves selectively cutting sub-fuse lines of a fuse line.
7576407 Devices and methods for constructing electrically programmable integrated fuses for low power applications  
Electrically programmable integrated fuses are provided for low power applications. Integrated fuse devices have stacked structures with a polysilicon layer and a conductive layer formed on the...
7576380 Methods for enhancing capacitors having roughened features to increase charge-storage capacity  
Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the...
7576374 Semiconductor device with robust polysilicon fuse  
A new method is provided to create a polysilicon fuse. The invention provides for applying a first oxide plasma treatment to the surface of the created polysilicon fuse, creating a thin layer of...
7573118 MOS electric fuse, its programming method, and semiconductor device using the same  
A programming method of a MOS electric fuse including preparing, as a fuse element, a MOS transistor which has a first impurity region and a second impurity region, both of a second conductivity...
7572682 Semiconductor structure for fuse and anti-fuse applications  
A fuse/anti-fuse structure is provided in which programming of the anti-fuse is caused by an electromigation induced hillock that is formed adjacent to the fuse element. The hillock ruptures a thin...
7569907 Hybrid chip fuse assembly having wire leads and fabrication method therefor  
A chip fuse includes a substrate, a fuse element extending on the substrate, and first and second wire leads coupled to the fuse element. Contact pads may extend over portions of the fuse element...
7557424 Reversible electric fuse and antifuse structures for semiconductor devices  
A structure and method of fabricating reversible fuse and antifuse structures for semiconductor devices is provided. In one embodiment, the method includes forming at least one line having a via...
7556989 Semiconductor device having fuse pattern and methods of fabricating the same  
A semiconductor device includes a semiconductor substrate having a fuse region and an interconnection region, a first insulating layer formed in the fuse region and the interconnection region, a...
7550817 Semiconductor device having fuse with protection capacitor  
A semiconductor device has a fuse, an internal circuit and a protection capacitor. The fuse has a first terminal connected to be applied to a fixed voltage and a second terminal. The internal...
7550789 Using electrically programmable fuses to hide architecture, prevent reverse engineering, and make a device inoperable  
Techniques and systems whereby operation of and/or access to particular features of an electronic device may be controlled after the device has left the control of the manufacturer are provided....
7550788 Semiconductor device having fuse element arranged between electrodes formed in different wiring layers  
A semiconductor device includes a lower electrode, an upper electrode, and a fuse element that connects the lower electrode and the upper electrode. The height of the fuse element is greater than...
7544992 Illuminating efficiency-increasable and light-erasable embedded memory structure  
An illuminating efficiency-increasable and light-erasable embedded memory structure including a substrate, a memory device, many dielectric layers, many cap layers and at least three metal layers...
7544543 Semiconductor device with capacitor and fuse, and method for manufacturing the same  
A semiconductor device with a capacitor and a fuse, and a method for manufacturing the same are described. The semiconductor device comprises a semiconductor substrate having a capacitor region and...
7541676 Fuse-structure  
A metal layer structure is disclosed. The metal layer structure includes a substrate, a first dielectric layer on a surface of the substrate, and at least one first conductor and at least one...
7538410 Fuse structure window  
The present invention provides a fuse structure. The fuse structure comprises a substrate, a plurality of conductive layers, a plurality of dielectric layers and a plurality of conductive plugs....
7538369 Resistance-change-type fuse circuit  
A resistance-change-type fuse circuit has a plurality of polysilicon fuses which are made of polysilicon and causes irreversible change in resistance by flowing a current; a plurality of...
7535078 Semiconductor device having a fuse and method of forming thereof  
A fuse ( 43 ) is formed overlying a passivation layer ( 35 ) and under a packaging material ( 55, 70 ). In one embodiment, a fuse ( 43 ) is blown before the packaging material ( 55, 70 ) is formed....
7529147 Semiconductor device and method of fabricating the same  
The semiconductor device has a semiconductor substrate; an electric fuse provided on the semiconductor substrate, and having a first fuse link and a second fuse link connected in series; and a...
7518212 Graded GexSe100-x concentration in PCRAM  
The present invention provides a design for a PCRAM element which incorporates multiple metal-containing germanium-selenide glass layers of diverse stoichiometries. The present invention also...
7518211 Chip and package structure  
The invention is directed to a chip comprising a substrate having a plurality of pads located thereon and a passivation layer located over the substrate, wherein the passivation layer has a...
7517762 Semiconductor device capable of preventing moisture-absorption of fuse area thereof and method for manufacturing the fuse area  
A fuse area of a semiconductor device capable of preventing moisture-absorption and a method for manufacturing the fuse area are provided. When forming a guard ring for preventing permeation of...
7511355 Semiconductor device having fuse element  
In a semiconductor device including a switching element and a fuse element which is connected in series with the switching element and which melts and blows out as a result of an electric current...
7498655 Probe-based memory  
Apparatuses, a method, and a system for a non-volatile, probe-based memory device are disclosed herein. In various embodiments, probe-based memory may be one-time programmable or rewritable...
7495310 Fuse-data reading circuit  
A fuse-data reading circuit is provided in a semiconductor integrated circuit device. In the fused-data reading circuit, a differential latch circuit compares a current depending on the resistance...
7495309 Semiconductor device and manufacturing method thereof  
A redundant fuse is provided with a redundant length, here a winding structure, at one end thereof, here at a vicinity of a second wire side to which a high voltage (Vcc) is impressed. A...
7492032 Fuse regions of a semiconductor memory device and methods of fabricating the same  
A device and method of manufacturing a fuse region are disclosed. The fuse region may include an interlayer insulating layer formed on a substrate, a plurality of fuses disposed on the interlayer...
7491965 Heat-shielded low power PCM-based reprogrammable eFUSE device  
An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the...
7489230 Semiconductor device and method of manufacturing the same  
A semiconductor device includes a first insulating layer, which is formed on a semiconductor substrate (not shown), and formed with a concave portion, and an electric fuse which has a conductive...
7485944 Programmable electronic fuse  
A programmable device (eFuse), includes: a substrate ( 10 ); an insulator ( 13 ) on the substrate; an elongated semiconductor material ( 12 ) on the insulator, the elongated semiconductor material...
7479689 Electronically programmable fuse having anode and link surrounded by low dielectric constant material  
An electronically programmable fuse (e-fuse) is disclosed. In one embodiment, the e-fuse includes a cathode surrounded only by silicon dioxide; an anode; and a polysilicon-silicide programmable...
7479447 Method of forming a crack stop void in a low-k dielectric layer between adjacent fuses  
A crack stop void is formed in a low-k dielectric layer between adjacent fuse structures for preventing propagation of cracks between the adjacent fuse structures during a fuse blow operation. The...
7473319 Apparatus and method for manufacturing semiconductor device incorporating fuse elements  
An apparatus and a method for manufacturing semiconductor devices is disclosed for selectively disconnecting a fuse element out of plural fuse elements formed on a semiconductor wafer substrate...