Matches 401 - 450 out of 655 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 >
Match Document Document Title
6204549 Overvoltage protection device  
The invention relates to an overvoltage protection device and to a method for fabricating such a device. A substrate (1) is provided with a first electrode layer (2), above which extends a second...
6204548 Fuse for semiconductor device and semiconductor device  
To provide a semiconductor device fuse, which does not damage the lower layer when it is cut by irradiation with a laser beam. In forming a fuse 2 by forming an electroconductive thin film on the...
6191482 Semiconductor chip carrier having partially buried conductive pattern and semiconductor device using the same  
A semiconductor chip is mounted on a semiconductor chip carrier through a flip chip bonding technique; the semiconductor chip carrier includes an insulating layer such as synthetic resin having a...
6180992 Fuse configuration for a semiconductor storage device  
A fuse configuration for a semiconductor storage device has a multiplicity of fuses on a semiconductor body. The fuses are disposed in two or more planes so as to save chip area. The fuses are...
6180993 Ion repulsion structure for fuse window  
An ion repulsion structure for a fuse window is provided. The ion repulsion structure includes multi-level metallic layers and a P-type silicon semiconductor substrate having a plurality of wells....
6180503 Passivation layer etching process for memory arrays with fusible links  
A method is described for progressively forming a fuse access openings in integrated circuits which are built with redundancy and use laser trimming to remove and insert circuit sections. The fuses...
6177714 Semiconductor device having a fuse of the laser make-link programming type  
In a laser beam make-link programmable semiconductor device, a pair of conductor strips are formed in the same level plane on a lower level insulator film formed on a semiconductor substrate, and...
6172896 Layout arrangements of fuse boxes for integrated circuit devices, including bent and straight fuses  
An integrated circuit device such as an integrated circuit memory device, includes a first fuse group such as a first laser fuse group including a plurality of first laser fuses each having a first...
6166421 Polysilicon fuse that provides an open current path when programmed without exposing the fuse to the environment  
The contamination introduced into a conventional fuse via the window opening of the fuse is eliminated by forming a fuse with a cavity. When the fuse is programmed by passing a current through the...
6165851 Semiconductor nonvolatile storage and method of fabricating the same  
A semiconductor nonvolatile storage that is an inter-gate insulating film breakdown type memory is configured by providing a field oxide film on a semiconductor substrate 1, a gate electrode on the...
6163063 Semiconductor device  
A semiconductor device (10) is formed to have multiple external connection pads (17, 18) for an active element (12). The multiple external connection pads (17, 18) are electrically connected...
6163062 Semiconductor device having a metallic fuse member and cutting method thereof with laser light  
A semiconductor device has a plurality of fuse members (1a, 1b) composed of a metal that can be cut by laser light (4), disposed over a semiconductor substrate (5). The length L of the fuse members...
6160302 Laser fusible link  
A structure (and method) for selectively making an electrical connection comprising a conductive element, wherein the conductive element becomes non-conductive after application of radiation...
6150916 Architecture of poly fuses  
An architecture of poly fuses includes a number of fuses, a dielectric layer, a sheet-like etching stop layer, and a passivation layer, wherein the sheet-like etching stop layer further includes a...
6144074 Semiconductor memory device having stack-type memory cells and a method for manufacturing the same  
At least one dummy storage node is formed for a plurality of storage nodes provided in stack type memory cells in which a plate electrode is grounded through the at least one dummy storage node,...
6130469 Electrically alterable antifuse using FET  
An integrated circuit and fabrication method for an antifuse structure that includes a shallow trench oxide isolation region disposed in a silicon substrate, the oxide in the trench having a top...
6127694 Semiconductor wafer and method of manufacturing the same, and semiconductor device and test board of the same  
Regarding a semiconductor device, a burn-in board can be standardized in each package. An IC (100) includes a VCC terminal (2), a GND terminal (3), input terminals (4a, 4b), and output terminals...
6127721 Soft passivation layer in semiconductor fabrication  
The use of an etch stop layer to define a terminal via opening to access a device feature after formation of a photosensitive soft-passivation layer. The etch stop layer allows the size of the...
6124194 Method of fabrication of anti-fuse integrated with dual damascene process  
A method of fabricating an anti-fuse module and dual damascene interconnect structure comprises the following steps. A semiconductor structure having at least two exposed metal lines covered by a...
6111301 Interconnection with integrated corrosion stop  
An interconnection structure for a semiconductor circuit is provided employing a conductor structure electrically connected to conductive wiring located on a different level than the conductor...
6111264 Small pores defined by a disposable internal spacer for use in chalcogenide memories  
A method for fabricating an ultra-small pore or contact for use in chalcogenide memory cells specifically and in semiconductor devices generally in which disposable spacers are utilized to...
6107178 Methods for etching fuse openings in a semiconductor device  
An etch of a fuse opening in overlying layers above a laser-blowable semiconductor fuse having a silicon nitride cap and silicon nitride spacers begins with a silicon nitride that is enclosed in a...
6104079 Closely pitched polysilicon fuses and method of forming the same  
A method for decreasing the pitch of polysilicon fuses uses tungsten barriers formed adjacent to the fuse elements. The tungsten barriers are made compatible with the process to form a crack stop...
6100117 Method for manufacturing DRAM having a redundancy circuit region  
A method for manufacturing DRAM having a redundancy circuit region. The method utilizes a laser beam permeable layer such as a silicon nitride layer to serve as a stop layer in the etching step of...
6093954 Semiconductor device having variable delay circuit having multi-layered semiconductor structure  
A variable delay circuit has plural delay stages connected in series for providing delay time during signal propagation therethrough, and a high resistive delay signal line on a lower level of a...
6081021 Conductor-insulator-conductor structure  
An integrated circuit device including a conductor-insulator-conductor structure and a method of manufacturing the structure simultaneously while forming a dual damascene via. A first interconnect...
6078092 Resettable fuse integrated circuit package  
A resettable fuse is connected in series with a bonding pad of an IC chip, In the presence of a high voltage surge, the resettable fuse breaks the connection temporary. After the surge is over, the...
6064095 Layout design of electrostatic discharge protection device  
A layout design for an electrostatic discharge protection device formed above a first type of semiconductor substrate. This electrostatic discharge protection device comprises a gate region having...
6057589 Method for over-etching to improve voltage distribution  
An over-etched (OE) antifuse includes a lower electrode, an antifuse layer contacting the lower electrode by an over-etched via, and a second conductive layer formed on the antifuse layer. This...
6054749 Thin film device repaired using enhanced repair process  
A process for partially repairing defective Multi-Chip Module (MCM) Thin-Film (TF) wiring nets. The process comprises the steps of locating a short circuit between any two nets of the MCM,...
6051851 Semiconductor devices utilizing silicide reaction  
Cheap semiconductor memory devices are provided so as to enable high-speed writing and reading but rarely to malfunction, thus being high in reliability. In a semiconductor device which comprises a...
6046488 Semiconductor device having conductive layer and manufacturing method thereof  
A semiconductor device allowing the manufacturing process to be simplified and fine structures therein to be readily formed and a manufacturing method thereof are provided. In the semiconductor...
6040615 Semiconductor device with moisture resistant fuse portion  
On a semiconductor substrate, a first circuit and a second circuit are provided with a space therebetween. The first circuit and the second circuit are connected to each other by a fuse portion. In...
6040614 Semiconductor integrated circuit including a capacitor and a fuse element  
A semiconductor integrated circuit includes a fuse element located on an insulating layer. The surface of the insulating layer is substantially smooth. The insulating layer is located over a...
6037648 Semiconductor structure including a conductive fuse and process for fabrication thereof  
A semiconductor structure comprising a semiconductor substrate, an electrically conductive level on the substrate and a metal fuse located at the conductive level wherein the fuse comprises a...
6013938 Power control device  
Providing a power control device of a simple structure which increases the reliability of a circuit as incorporated therein. A semiconductor component constituting a power control device comprises...
6008716 Fuse structure connecting first level and second level interconnections in inter-layer insulator  
The present invention provides a fuse structure formed in an inter-layer insulator having a first level interconnection and a second level interconnection isolated by the inter-layer insulator from...
6008523 Electrical fuses with tight pitches and method of fabrication in semiconductors  
A semiconductor device includes an array of electrical fuses having a structure which permits tight fuse pitches while enabling electrical fusing at voltages of about 10 volts or less. The fuses...
5998853 Methods and apparatus for electrical marking of integrated circuits to record manufacturing test results  
Semiconductor integrated circuits are electrically marked at final test time to form a permanent, visually and electrically readable record of the test results. The electrical record can provide a...
5994757 Electronic circuit device capable for use as a memory device  
An electronic circuit device includes first and second conductors and a high-resistance member arranged therebetween. The high-resistance member consists of a material which changes from a high...
5990537 Semiconductor device with fuse  
A semiconductor device with a fuse is formed on a semiconductor substrate having a base semiconductor substrate and an epitaxial semiconductor layer formed thereon and defining a major surface of...
5986321 Double density fuse bank for the laser break-link programming of an integrated circuit  
A fuse bank for use in the laser break-link programming of an integrated circuit device. The fuse bank uses fuse elements with two ends that contain fusible regions proximate the first end and...
5969404 Silicide agglomeration device  
A fusible link device disposed on a semiconductor substrate for providing discretionary electrical connections. The fusible link device of the invention includes a silicide layer and a polysilicon...
5969386 Aluminum gates including ion implanted composite layers  
An aluminum gate for a thin film transistor is fabricating by implanting ions into the exposed surface of the aluminum gate. The ions are preferably selected from the group consisting of nitrogen,...
5969403 Physical fuse for semiconductor integrated circuit  
A fuse for an integrated circuit is constituted by a shallow NP junction, covered with a metal contact, the semiconductor region being not excessively doped. For the blowing of the fuse, the...
5965927 Integrated circuit having an opening for a fuse  
An improved structure and method of forming a protective layer over an opening in insulation layers over a fuse is presented. The protective layer prevents contaminates from entering the exposed...
5949323 Non-uniform width configurable fuse structure  
A radiant-energy configurable fuse structure and array are provided in which the fuse body of the fuse is wider than the fuse connection terminals. The fuse body can be circular or polygonal to...
5945814 Method and apparatus for a low voltage high current bi-directional termination voltage regulator  
A low voltage high current bi-directional termination voltage regulator for use in a bus termination circuit in a repeater stack is disclosed that includes an operational amplifier, a bipolar...
5936296 Integrated circuits having metallic fuse links  
An integrated circuit includes a metallic fuse link blown by a laser beam which may enhance the long term reliability of the metallic fuse link. The integrated circuit includes an insulating layer...
5929505 Inter-metal-wiring antifuse device provided by self-alignment  
A first electrode layer is formed on a semiconductor substrate, and surfaces other than a top surface thereof are buried in an insulation film, and the top surface makes the same surface as that of...
Matches 401 - 450 out of 655 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 >