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7026692 |
Low voltage non-volatile memory transistor
A p-channel non-volatile memory (NVM) transistor is programmed by shifting the threshold voltage of the transistor. The threshold voltage is shifted by introducing a programming current to the gate...
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7009222 |
Protective metal structure and method to protect low-K dielectric layer during fuse blow process
A method to protect a low-K IMD layer underlying a fuse link during a fuse blowing process including a guarded fuse and method for forming the same including forming a fuse portion comprising two...
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7009274 |
Fuse box semiconductor device
A fuse box includes a semiconductor substrate having a fuse region, and a lower line in the fuse region that has a first region and a second region. An upper line is placed on the upper part of the...
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7005727 |
Low cost programmable CPU package/substrate
A programmable package with a fuse embedded therein, and fabrication method are provided. The fuse has first and second terminal ends joined by a central portion defining a fusible link. The ends...
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6998697 |
Non-volatile resistance variable devices
A chalcogenide comprising material is formed to a first thickness over the first conductive electrode material. The chalcogenide material comprises A x B y . A metal comprising layer is formed to a...
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6992365 |
Reducing leakage currents in memories with phase-change material
A memory cell including a phase-change material may have reduced leakage current. The cell may receive signals through a buried wordline in one embodiment. The buried wordline may include a...
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6991971 |
Method for fabricating a triple damascene fuse
A method for fabricating a fuse for a semiconductor device. The method including: providing a substrate; forming a first dielectric layer on a top surface of said substrate; forming a dielectric...
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6989577 |
Semiconductor device having multiple insulation layers
A semiconductor device includes a multiple insulation layer structure in which multiple insulation layers each having interconnection layer are built up and either one of the interconnection layer...
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6979879 |
Trim zener using double poly process
In a zener zap diode device and a system for making such a device using a double poly process, p+ and n+regions are formed in a tub by means of p-doped and n-doped polysilicon regions, and a p-n...
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6979880 |
Scalable high performance antifuse structure and process
Systems and methods are provided for a scalable high-performance antifuse structure and process that has a low RC component, a uniform dielectric breakdown, and a very low, effective dielectric...
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6979868 |
Bypass circuits for reducing plasma damage
The present invention provides a method for reducing-plasma damage to a gate oxide of a metal-oxide semiconductor (MOS) transistor positioned on a substrate of a MOS semiconductor wafer. The method...
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6972474 |
Semiconductor device having a fuse and a low heat conductive section for blowout of fuse
In a semiconductor device having a fuse 11 which makes connection between a first interconnection 10 and a second interconnection 12 , and a first low heat-conductive section 13 which makes...
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6972429 |
Chalcogenide random access memory and method of fabricating the same
A method of fabricating a chalcogenide random access memory (CRAM) is provided. The method is to provide a substrate having a bottom electrode thereon and then form a chalcogenide film and a...
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6969904 |
Trimming pattern
There is provided a trimming pattern enabling trimming to be implemented with ease and time required for trimming to be shortened without causing damage to internal elements. The invention provides...
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6969869 |
Programmable resistance memory element with indirect heating
The semiconductor device comprising a chalcogenide phase change material. The chalcogenide material being programmed from one resistance state to another resistance state by applying a programming...
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6962844 |
Memory device having a semiconducting polymer film
A memory device includes a semiconducting polymer film, which includes an organic dopant. The semiconducting polymer film has a first side and a second side. The memory device also includes a first...
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6956277 |
Diode junction poly fuse
System and method for providing an electrical fuse having a p-n junction diode. A preferred embodiment comprises a cathode, an anode, and one or more links formed between the cathode and the anode....
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6956278 |
Low-density, high-resistivity titanium nitride layer for use as a contact for low-leakage dielectric layers
A low-density, high-resistivity layer of a PVD sputter-deposited material, preferably titanium nitride, when coupled with a dielectric, makes a superior low-leakage insulating barrier for use in...
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6946673 |
Integrated resistor, phase-change memory element including this resistor, and process for the fabrication thereof
A vertical-current-flow resistive element includes a monolithic region having a first portion and a second portion arranged on top of one another and formed from a single material. The first...
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6946719 |
Semiconductor device including junction diode contacting contact-antifuse unit comprising silicide
The invention provides for a vertically oriented junction diode having a contact-antifuse unit in contact with one of its electrodes. The contact-antifuse unit is formed either above or below the...
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6946718 |
Integrated fuse for multilayered structure
A device includes a substrate and a first layer disposed adjacent the substrate. A second layer is disposed adjacent the first layer. A third layer contains a gap and is disposed adjacent the...
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6940085 |
Memory structures
A memory structure that includes a first electrode, a second electrode, a third electrode, a control element disposed between the first electrode and the second electrode, and a memory storage...
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6933591 |
Electrically-programmable integrated circuit fuses and sensing circuits
Programmable fuses for integrated circuits are provided. The fuses may be based on polysilicon or crystalline silicon fuse links coated with silicide or other conductive thin films. Fuses may be...
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6927473 |
Semiconductor fuses and semiconductor devices containing the same
Fuses for integrated circuits and semiconductor devices, methods for making and using the same, and semiconductor devices containing the same. The semiconductor fuse contains two conductive layers,...
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6927472 |
Fuse structure and method to form the same
A method and structure for a fuse structure comprises an insulator layer, a plurality of fuse electrodes extending through the insulator layer to an underlying wiring layer, an electroplated fuse...
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6913954 |
Programmable fuse device
A fuse device including a transistor having a source, drain, and gate. The gate includes a first and second gate contact. A current may be run from the first gate contact to the second gate contact...
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6914319 |
Semiconductor device having a fuse
A fuse used for redundancy function in a semiconductor device includes a pair of fuse terminals formed as a common layer with top interconnect lines by using a damascene technique, and a fuse...
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6911360 |
Fuse and method for forming
An active fuse includes an active fuse geometry ( 120 ) that is used to form both a variable resistor ( 106 ) and a select transistor ( 110 ). In one embodiment, the active fuse geometry is formed...
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6903986 |
Method and apparatus for improving the reliability of the reading of integrated circuit fuses
A system is provided for use with an on-chip fuse. If the fuse ( 40 ) is to be blown, the system blows the fuse, then performs a test read by comparing it with a larger-than-normal reference...
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6903436 |
Multiple-time programmable electrical fuse utilizing MOS oxide breakdown
An improved a programmable electrical fuse device utilizing MOS oxide breakdown is described herein. The fuse device comprises a programmable MOS device having a first gate width, a reference MOS...
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6900516 |
Semiconductor fuse device
An increased number of fuses per area are provided in this semiconductor device while complying with the predetermined distance between the fuses. The device having a first patterned, conductive...
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6901004 |
High voltage switch circuitry
The present invention relates to a high voltage switch used with a one-time programmable memory device and a method of setting a state of a one-time programmable memory device using such a high...
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6897467 |
Controllable ovanic phase-change semiconductor memory device
An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of forming the same, are disclosed. Such memory devices...
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6888216 |
Circuit having make-link type fuse and semiconductor device having the same
The present invention discloses a circuit having a make-link type fuse. The circuit comprising a first make-link type fuse connected between a gate of a transistor and a first supply voltage.
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6882014 |
Protection circuit for MOS components
A protection circuit for MOS components. In the protection circuit, a bypass PMOS transistor has a gate, a source and a substrate, all coupled to a first voltage node and a drain coupled to a gate...
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6882699 |
Monotonic up-counter in an integrated circuit
An increasing monotonic counter over n bits formed as an integrated circuit, including an assembly of 2 n+1 −(n+2) irreversible counting cells distributed in at least n groups of 2 p −1...
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6878614 |
Methods of forming integrated circuit devices including fuse wires having reduced cross-sectional areas and related structures
A method of forming an integrated circuit device can include forming a plurality of fuse wires on an integrated circuit substrate, and forming an insulating layer on the integrated circuit...
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6879018 |
Fuse for use in a semiconductor device, and semiconductor devices including the fuse
A metal silicide fuse for a semiconductor device. The fuse includes a conductive region positioned adjacent a common well of a first conductivity type, a terminal region positioned adjacent a well...
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6879021 |
Electronically programmable antifuse and circuits made therewith
An antifuse device ( 120 ) that includes a bias element ( 124 ) and an programmable antifuse element ( 128 ) arranged in series with one another so as to form a voltage divider having an output...
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6876057 |
Semiconductor devices including fuses and dummy fuses
A semiconductor device may include a fuse section 100 having a layer in which a plurality of fuses 26 that are fusible by irradiation of an energy beam are formed, and a circuit wiring layer ...
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6876015 |
Semiconductor devices
A semiconductor device may include a fuse section 110 in which a plurality of fuses 20 to be fused by irradiation of a laser beam are formed. The fuses 20 are arranged at a pitch X, and an...
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6876058 |
Wiring protection element for laser deleted tungsten fuse
A structure and associated method for protecting an electrical structure during a fuse link deletion by focused radiation. The structure comprises a fuse element, a protection plate, a first...
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6873027 |
Encapsulated energy-dissipative fuse for integrated circuits and method of making the same
A laser-programmable fuse structure for an integrated circuit device is disclosed. In an exemplary embodiment of the invention, the fuse structure includes a conductive layer, the conductive layer...
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6867441 |
Metal fuse structure for saving layout area
A fuse structure for a semiconductor device on a substrate includes a fuse having an electrically conductive fuse line of a standard fuse length formed in an electrically conductive layer disposed...
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6864124 |
Method of forming a fuse
A surface of a semiconductor substrate defined with at least one fuse area and at least one bonding pad area. A conductive layer with a thickness of 12 kâ„« and a protective layer are sequentially...
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6861727 |
Antifuse structures, methods, and applications
A typical integrated circuit includes millions of microscopic transistors, resistors, and other components interconnected to define a circuit, for example a memory circuit. Occasionally, one or...
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6861682 |
Laser link structure capable of preventing an upper crack and broadening an energy window of a laser beam, and fuse box using the same
A laser link structure used in semiconductor devices and a fuse box using the laser link structure preferably include a plurality of first conductive line patterns positioned in parallel at...
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6858914 |
Semiconductor device with fuses
A semiconductor device has: a semiconductor substrate having a principal surface; a fuse circuit formed above the principal surface, the fuse circuit having fuse elements each having a...
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6856002 |
Graded GexSe100-x concentration in PCRAM
The present invention provides a design for a PCRAM element which incorporates multiple metal-containing germanium-selenide glass layers of diverse stoichiometries. The present invention also...
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6849929 |
IC chip and semiconductor device
An IC chip has externally and selectively cuttable members F 1 -F 3 , which can be cut, or cut open, at more than one cuttable points C 1 and C 2 . So long as at least one of the multiple cuttable...
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