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9029246 Methods of forming epitaxial structures  
An embodiment is a method. A first III-V compound semiconductor is epitaxially grown in a trench on a substrate, and the epitaxial growth is performed in a chamber. The first III-V compound...
8729577 Light-emitting device with head-to-tail P-type and N-type transistors  
A light-emitting microelectronic device including a first N-type transistor (T1) and a second P-type transistor (T2), the respective gates of which are formed opposite one another, either side of...
8587085 Semiconductor device with trench isolation having a diffusion preventing film and manufacturing method thereof  
There is provided a technology capable of providing desirable operation characteristics in a field effect transistor formed in an active region surrounded by a trench type element isolation part....
8518787 Through wafer vias and method of making same  
A method of forming and structure for through wafer vias and signal transmission lines formed of through wafer vias. The method of forming through wafer vias includes forming an array of through...
8334451 Discrete and integrated photo voltaic solar cells  
A photovoltaic (PV) cell device comprises a first semiconductor substrate; a second semiconductor substrate bonded to the first semiconductor substrate; an insulating layer provided between the...
8299566 Through wafer vias and method of making same  
A method of forming and structure for through wafer vias and signal transmission lines formed of through wafer vias. The method of forming through wafer vias includes forming an array of through...
8159003 III-nitride wafer and devices formed in a III-nitride wafer  
A III-nitride device having a support substrate that may include a first silicon body, a second silicon body, an insulation body interposed between the first and second silicon bodies, and a...
8106475 Semiconductor device and method of manufacturing the same  
A semiconductor device includes a semiconductor substrate formed with a plurality of first element isolation trenches having respective first opening widths and a plurality of second element...
7977705 Low-cost substrates having high-resistivity properties and methods for their manufacture  
In one embodiment, the invention provides substrates that are structured so that devices fabricated in a top layer thereof have properties similar to the same devices fabricated in a standard high...
7873245 Optoelectric composite substrate and method of manufacturing the same  
An optoelectric composite substrate of the present invention includes an insulating film, an optical waveguide embedded in the insulating film in a state that an upper surface is exposed from the...
7851884 Field-effect transistor, semiconductor chip and semiconductor device  
A FET exhibiting excellent uniformity and productivity and having a low noise figure and high associated gain as high-frequency performance, a semiconductor chip having this FET and a...
7801396 Optoelectric composite substrate and method of manufacturing the same  
An optoelectric composite substrate of the present invention includes an insulating film, an optical waveguide embedded in the insulating film in a state that an upper surface is exposed from the...
7791192 Circuit for and method of implementing a capacitor in an integrated circuit  
An integrated circuit package has a substrate; a discrete capacitor coupled to a first surface of the substrate; an integrated circuit die coupled to the first surface of the substrate over the...
7528033 Semiconductor device with a dummy gate and a method of manufacturing a semiconductor device with a dummy gate  
A dummy gate may be formed over an isolation layer. A sidewall spacer may be formed next to the dummy gate. The dummy gate and the sidewall spacer may substantially cover or completely cover the...
7382015 Semiconductor device including an element isolation portion having a recess  
A non-volatile semiconductor memory device, which is intended to prevent data destruction by movements of electric charges between floating gates and thereby improve the reliability, includes...
7340121 Optoelectric composite substrate and method of manufacturing the same  
An optoelectric composite substrate of the present invention includes an insulating film, an optical waveguide embedded in the insulating film in a state that an upper surface is exposed from the...
7205632 Anti-scattering attenuator structure for high energy particle radiation into integrated circuits  
A microelectronics device including a semiconductor device located at least partially over a substrate, a bombarded area located at least partially over the substrate and adjacent the...
7199441 Optical module device driven by a single power supply  
An optical integrated circuit having optical devices is fabricated. These optical devices must be biased in the mutually opposite directions. If such an optical integrated circuit is fabricated...
7196395 Semiconductor device and manufacturing method  
The object is the present invention is to provide a semiconductor device including a circuit employing two or more field-effect transistor that are desired to have equal characteristics, capable...
7115988 Bypass capacitor embedded flip chip package lid and stiffener  
The present invention provides a heat spreader with a bypass capacitor to provide substantially instant power and/or to control simultaneous switching noise (SSN). The present invention also...
7112867 Resistive isolation between a body and a body contact  
A high resistance region may be used to isolate the body of a first transistor from a body contact.
6949812 Method for manufacturing a high frequency semiconductor structure and high frequency semiconductor structure  
A semiconductor structure for high frequency operation has a substrate with a doped well formed therein and a buffer layer made of a substrate material covers the well. The buffer layer is made of...
6787877 Method for filling structural gaps and integrated circuitry  
A semiconductor processing method for filling structural gaps includes depositing a substantially boron free silicon oxide comprising material at a first average deposition rate over an exposed...
6774454 Semiconductor device with an silicon insulator (SOI) substrate  
A semiconductor and a method of manufacturing thereof form a region with a sufficient gettering effect. A p-type channel MOSFET and an n-type channel MOSFET are formed in an n-type semiconductor...
6774416 Small area cascode FET structure operating at mm-wave frequencies  
A small area cascode FET structure capable of operating at mm-wave frequenices cascades a common-source (CS) FET with a common gate (CG) FET, in a smaller physical area than conventional cascode...
6724020 Semiconductor device and power amplifier using the same  
A semiconductor device comprising a bipolar transistor having an emitter layer consisting of a semiconductor containing indium, and a protective insulating film containing silicon and oxygen which...
6646320 Method of forming contact to poly-filled trench isolation region  
Existing polysilicon emitter technology is used to contact poly fill in a trench isolation structure. A standard single poly emitter window process is followed. An “emitter window” is masked...
6635537 Method of fabricating gate oxide  
A method of fabricating a gate oxide layer. A mask layer isformed on a substrate. The mask layer and the substrate are patterned to form a trench in the substrate. A portion of the mask layer is...
6479880 Floating gate isolation device  
An isolation structure providing electrical isolation in two dimensions between memory cells in semiconductor memory device. The isolation structure comprises a trench formed in a substrate of a...
6465867 Amorphous and gradated barrier layer for integrated circuit interconnects  
An integrated circuit and manufacturing method therefor is provided having a semiconductor substrate with a semiconductor device. A device dielectric layer is formed on the semiconductor...
6459134 Semiconductor devices which have analog and digital circuits integrated on a common substrate  
A semiconductor device with digital and analog circuits has a structure for preventing noise penetration from the digital circuit to the analog circuit. The semiconductor device has a...
6414368 Microcomputer with high density RAM on single chip  
A microcomputer comprises an integrated circuit device with processor and memory and communication links arranged to provide non-shared connections to similar links of other microcomputers. The...
6404034 CMOS circuit with all-around dielectrically insulated source-drain regions  
A CMOS circuit has all-around dielectrically insulated source-drain regions. Trenches are formed in the source-drain regions. The trenches are etched onto the mono-crystalline silicon and filled...
6388334 System and method for circuit rebuilding via backside access  
A circuit modification tool and method for a flip-chip IC permits access to circuit regions near the interconnects using an aperture formed through the circuit side. In one embodiment, an etching...
6373099 Method of manufacturing a surrounding gate type MOFSET  
A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side...
6239472 MOSFET structure having improved source/drain junction performance  
A MOSFET structure having substantially reduced parasitic junction capacitance, relaxed thermal budget constraints and resiliency to hot carrier damage is disclosed. The MOSFET structure includes...
6127716 Heterojunction bipolar transistor and manufacturing method thereof  
On an n-type semiconductor substrate 41 doped in high density, a p-type semiconductor layer 2, an n-type semiconductor layer 4 doped in high density, which is a collector, a p-type semiconductor...
6114729 Plural wells structure in a semiconductor device  
Wells of a semiconductor device suitable for achieving high integration, and a method for forming the same are disclosed. The wells of a semiconductor device include a first conductivity type...
6031406 Single rail regulator  
An apparatus for suppressing the effect of noise from a first circuit on the performance of a second circuit wherein the first and second circuits are on a common substrate. Each of the first and...
5689124 Semiconductor device  
A semiconductor device comprises a silicon substrate, at least one compound semiconductor layer formed on the silicon substrate and including a GaAs semiconductor layer for serving as a...
5559359 Microwave integrated circuit passive element structure and method for reducing signal propagation losses  
A passive element structure and method for a microwave integrated circuit reduces signal propagation losses. In one approach, a passive element (10) has an insulating layer (12) overlying a...
5541424 Permeable base transistor having laminated layers  
An electronic component especially a p-channel or n-channel permeable base transistor (PBT) is provided as a plurality of layers, fabricated in a laminated composite, and with at least one...
5508553 Transversal bipolar transistor integrated with another transistor commonly provided on a semiconductor substrate  
A transversal bipolar transistor is structured to have a single crystal semiconductor film provided on a single crystal semiconductor region which is provided on a semiconductor substrate. The...
5475262 Functional substrates for packaging semiconductor chips  
A semiconductor device is manufactured by subdividing the chip carrier into a plurality of functional substrates, such as a signal connection substrate, a capacitor substrate, a resistor substrate...
5455437 Semiconductor device having crystalline defect isolation regions  
The present invention is mainly characterized in that a semiconductor device having a well which is of the same conductivity type as that of a substrate and which is isolated from the substrate is...
5449925 Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices  
Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices are obtained by forming an amorphous silicon carbide termination region in a monocrystalline silicon carbide...
5397903 Semiconductor substrate for gettering  
Disclosed is a semiconductor device fabrication substrate having a getter site formed directly below the device fabrication region to allow gettering near the device fabrication region. A...
5332912 Heterojunction bipolar transistor  
A heterojunction bipolar transistor comprises n+ -type GaAs collector contact region, an n-type GaAs collector region, a p+ -type GaAs base region, an n-type AlGaAs emitter region, and an n+ -type...
5298787 Semiconductor embedded layer technology including permeable base transistor  
A permeable base transistor (30) including a metal base layer (34) embedded in a semiconductor crystal (32) to separate collector (38) and emitter (40) regions and form a Schottky barrier with...
5289015 Planar fet-seed integrated circuits  
FETs and quantum well diodes are combined on the same semi-insulating substrate, while providing the FETs with protection from spurious voltages. A deeply buried P region in the semi-insulating...

Matches 1 - 50 out of 117 1 2 3 >