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7617598 Method of making a thermally isolated via structure  
This document discusses, among other things, a method including providing a laminate having a first conductive layer, a second conductive layer and an insulator between the first and second...
7612453 Semiconductor device having an interconnect structure and a reinforcing insulating film  
A semiconductor device includes in an interconnect structure which includes a first interconnect made of a copper-containing metal, a first Cu silicide layer covering the upper portion of the first...
7608909 Suspended transmission line structures in back end of line processing  
A method for forming a transmission line structure for a semiconductor device includes forming an interlevel dielectric layer over a first metallization level, removing a portion of the interlevel...
7605443 Semiconductor substrate manufacturing method and semiconductor device manufacturing method, and semiconductor substrate and semiconductor device manufactured by the methods  
The present invention relates to a method of manufacturing a semiconductor substrate, which enables a semiconductor device to have high speed operating characteristics and high performance...
7602038 Damascene structure having a reduced permittivity and manufacturing method thereof  
A semiconductor device includes a damascene structure and an air gap embedded in the damascene dielectric layer. A method of manufacturing a semiconductor device includes depositing a metal barrier...
7592685 Device and methodology for reducing effective dielectric constant in semiconductor devices  
Semiconductor structure includes an insulator layer having at least one interconnect feature and at least one gap formed in the insulator layer spanning more than a minimum spacing of interconnects.
7579255 Semiconductor device and method for isolating the same  
The present invention relates to a semiconductor device and a method for isolating the same. The semiconductor device includes: a silicon substrate provided with a trench including at least one...
7573081 Method to fabricate horizontal air columns underneath metal inductor  
A new method is provided for creating an inductor on the surface of a silicon substrate. The invention provides overlying layers of oxide fins beneath a metal inductor. The oxide fins provide the...
7569906 Method for fabricating condenser microphone and condenser microphone  
A first semiconductor chip includes a fixed electrode formed on a first semiconductor substrate and a plurality of first metal spacers formed on a first interlayer dielectric. A second...
7566945 Semiconductor devices including nanotubes  
Nano semiconductor switch devices are provided that include a semiconductor substrate and a conductive layer on the semiconductor substrate. A first insulating layer is provided on the conductive...
7560344 Semiconductor device having a pair of fins and method of manufacturing the same  
Example embodiments relate to a semiconductor device and a method of manufacturing the same. A semiconductor device according to example embodiments may have reduced disturbances during reading...
7554166 Airdome enclosure for components  
A component having an airdome enclosure that protects the component from its external environment. An airdome enclosure according to the present techniques avoids the high costs of employing...
7553756 Process for producing semiconductor integrated circuit device  
An object of the present invention is to prevent formation of a badly situated via metal in a Damascene wiring portion in multiple layers having an air-gap structure. In the present invention, a...
7504699 Fabrication of a semiconductor device with air gaps for ultra-low capacitance interconnections  
A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a...
7492030 Techniques to create low K ILD forming voids between metal lines  
One aspect of the present subject matter relates to a method for forming an interlayer dielectric (ILD). In various embodiments of the method, an insulator layer is formed, at least one trench is...
7482261 Interconnect structure for BEOL applications  
A semiconductor interconnect structure is provided that includes a new capping layer/dielectric material interface which is embedded inside the dielectric material. In particular, the new interface...
7468538 Strained silicon on a SiGe on SOI substrate  
An intermediate semiconductor structure is disclosed. The semiconductor structure includes a substrate; a relaxed Si 1-x Ge x layer on the substrate, the relaxed Si 1-x Ge x layer having at least...
7465977 Method for producing a packaged integrated circuit  
There is described a method for producing a packaged integrated circuit. The method comprises a first step of building an integrated circuit having a micro-structure suspended above a micro-cavity,...
7462547 Method of fabricating a bipolar transistor having reduced collector-base capacitance  
A method is provided for fabricating a bipolar transistor that includes growing an epitaxial layer onto an underlaying region having a low dopant concentration and a trench isolation region...
7439605 Semiconductor device and method for manufacturing the same  
A semiconductor device include a plurality of active element cells including first element regions of a first conductivity type and second element regions of a second conductivity type, the second...
7405459 Semiconductor device comprising porous film  
The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels...
7404247 Method for making a pressure sensor  
A method for making a pressure sensor including the steps of providing a substrate and forming or locating a pressure sensing component on the substrate. The method further includes the step of,...
7402886 Memory with self-aligned trenches for narrow gap isolation regions  
Self-aligned trench filling is used to isolate devices in high-density integrated circuits. A deep, narrow trench isolation region is formed in a substrate between devices. The trench region...
7400024 Formation of deep trench airgaps and related applications  
A method for forming deep trench or via airgaps in a semiconductor substrate is disclosed comprising the steps of patterning a hole in the substrate, partly fill said hole with a sacrificial...
7394144 Trench semiconductor device and method of manufacturing it  
Consistent with an example embodiment, a reduced surface field effect type (RESURF) semiconductor device is manufactured having a drift region over a drain region. Trenches are formed through...
7352019 Capacitance reduction by tunnel formation for use with a semiconductor device  
A method used during the manufacture of a semiconductor device comprises providing at least first, second, and third spaced conductive structures, where the second conductive structure is...
7351661 Semiconductor device having trench isolation layer and a method of forming the same  
A semiconductor device having a trench isolation layer in a semiconductor substrate is provided, wherein the trench isolation layer includes a silicon nitride liner, a silicon oxide liner; and a...
7339253 Retrograde trench isolation structures  
Methods are provided for making retrograde trench isolation structures with improved electrical insulation properties. One method comprises the steps of: forming a retrograde trench in a silicon...
7335931 Monolithic microwave integrated circuit compatible FET structure  
A field effect transistor structure includes a single crystal substrate having: a source, gate and drain electrodes disposed on an upper surface of the substrate, the gate electrode having a region...
7312512 Interconnect structure with polygon cell structures  
Interconnect structures with polygonal cell structures. An exemplary interconnect structure comprises a substrate and a first dielectric layer, overlying the substrate and exposing a conductive...
7304358 MOS transistor with a deformable gate  
A MOS transistor with a deformable gate formed in a semiconductor substrate, including source and drain areas separated by a channel area extending in a first direction from the source to the drain...
7291919 Interlayer dielectric film, and method for forming the same and interconnection  
The interlayer dielectric film made of a three-dimensionally polymerized polymer is formed by polymerizing: first cross-linking molecules having three or more sets of functional groups in one...
7285839 Coating of copper and silver air bridge structures to improve electromigration resistance and other applications  
An improved electrical interconnect for an integrated circuit and methods for providing the same are disclosed. The electrical interconnect includes an air bridge extending through a gaseous medium...
7259432 Semiconductor device for reducing parasitic capacitance produced in the vicinity of a transistor located within the semiconductor device  
A semiconductor device includes: a gate electrode formed on a substrate; impurity regions formed in the substrate and to both sides of the gate electrode; a first interlayer insulating film formed...
7235456 Method of making empty space in silicon  
To change a plurality of trenches to one flat empty space by two-dimensionally forming the trenches on the surface of a semiconductor substrate and then applying heat treatment to the semiconductor...
7233052 Semiconductor device including fine dummy patterns  
A semiconductor device of this invention includes a first interconnect pattern formed on a semiconductor substrate and a second interconnect pattern formed above the first interconnect pattern with...
7230315 Integrated chemical microreactor with large area channels and manufacturing process thereof  
The microreactor has a body of semiconductor material; a large area buried channel extending in the body and having walls; a coating layer of insulating material coating the walls of the channel; a...
7224064 Semiconductor device having conductive interconnections and porous and nonporous insulating portions  
A semiconductor device and manufacturing method, wherein the semiconductor device has a semiconductor substrate on which a plurality of elements constituting a logic type device have been formed; a...
7214594 Method of making semiconductor device using a novel interconnect cladding layer  
A method and apparatus are provided an interconnect cladding layer. In one embodiment, a first sacrificial layer is deposited over a substrate and patterned. In the vias created during the...
7196406 ESD protection apparatus for an electrical device  
An ESD protection apparatus for an electrical device with a circuit structure having an internal terminal, which is connected to an external terminal of the electrical device via a conductive...
7190046 Bipolar transistor having reduced collector-base capacitance  
Structure and method are provided for forming a bipolar transistor. As disclosed, an intrinsic base layer is provided overlying a collector layer. A low-capacitance region is disposed laterally...
7190043 Techniques to create low K ILD for beol  
One aspect of the present subject matter relates to a method for forming an interlayer dielectric (ILD). In various embodiments of the method, an insulator layer is formed, at least one trench is...
7176487 Semiconductor integrated circuit  
To provide a test technology capable of reducing a package size by reducing a number of terminals (pins) in a semiconductor integrated circuit of SIP or the like constituted by mounting a plurality...
7161226 Multi-layered complementary wire structure and manufacturing method thereof  
A multi-layered wire structure includes a substrate, a plurality of first conductive lines formed in a first layer over the substrate extending in parallel to each other in a first direction, a...
7145215 Semiconductor device with a cavity therein and a method of manufacturing the same  
A semiconductor device includes a semiconductor substrate, cavities, and an element isolating region. The cavities, which are each shaped like a flat plate, are made in the semiconductor substrate....
7138718 Multilevel interconnect structure with low-k dielectric  
A multilevel interconnect structure with a low-k dielectric constant is fabricated in an integrated circuit structure by the steps of depositing a layer of photoresist on a substrate assembly,...
7125782 Air gaps between conductive lines for reduced RC delay of integrated circuits  
Methods of forming air gaps or porous dielectric materials between interconnects of integrated circuits and structures thereof. Air gaps or highly porous dielectric material having a dielectric...
7122888 Semiconductor device, electrical inspection method thereof, and electronic apparatus including the semiconductor device  
A semiconductor device is arranged so as to include (i) a wire L 1 , connected directly to an LSI chip, which serves as a VGL wire for supplying a voltage VGL to the LSI chip, and (ii) a wire LB 1 ...
7119446 Semiconductor device  
A semiconductor device is provided which includes a semiconductor element having power pads for supplying a power potential, ground pads for supplying a ground potential, and signal pads for...
7112866 Method to form a cross network of air gaps within IMD layer  
The invention provides a new multilevel interconnect structure of air gaps in a layer of IMD. A first layer of dielectric is provided over a surface; the surface contains metal points of contact....
Matches 1 - 50 out of 290 1 2 3 4 5 6 >