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8183659 Integrated circuits having interconnects and heat dissipators based on nanostructures  
The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are...
8183568 Substrate for semiconductor device, semiconductor device, and electronic apparatus  
A substrate for a semiconductor device includes: a base substrate; a semiconductor layer that has a source region, a drain region, a plurality of channel regions, and at least one intermediate...
8178882 Buffer layer for promoting electron mobility and thin film transistor having the same  
A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the...
8168972 Method for simultaneous recrystallization and doping of semiconductor layers and semiconductor layer systems produced according to this method  
A method for simultaneous recrystallization and doping of semiconductor layers, in particular for the production of crystalline silicon thin layer solar cells. A substrate base layer 1 is produced,...
8164152 Liquid crystal display and method of manufacturing the same  
A liquid crystal display and a method of manufacturing the same are provided. The liquid crystal display includes an insulating substrate, a gate electrode formed on the insulating substrate, an...
8154024 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film  
An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior...
8110829 Array substrate of liquid crystal display and method for fabricating the same  
A thin film transistor (TFT) for a liquid crystal display device includes a gate electrode, a source electrode, a drain electrode, an active region including a first semiconductor layer and a...
8093141 Method of fabricating a semiconductor device  
According to one embodiment, a method of fabricating a semiconductor device is disclosed. The method can include forming an amorphous layer on a portion of a first silicon substrate having a first...
8080451 Fabricating semiconductor structures  
Solutions for fabricating a semiconductor structure. One embodiment includes a method for fabricating a semiconductor structure, the method including: forming a first dielectric structure on a...
8072150 Display device  
A display device, comprising: an insulating substrate; a light sensor which includes a semiconductor layer disposed in a first region and a sensor input terminal and a sensor output terminal...
8067770 Thin film transistor and flat panel display device including the same  
A thin film transistor includes a channel layer including an amorphous 12CaO.7Al2O3 (C12A7) and a flat panel display device including the same. According to the present invention, the amorphous...
8053666 Solar cell and manufacturing method of the solar cell  
A p type amorphous silicon layer is stacked, by a CVD method, on a main surface of an n type single-crystalline silicon substrate; an n type amorphous silicon layer is stacked, by the CVD method,...
8003985 Apparatus having a dielectric containing scandium and gadolinium  
Apparatus having a dielectric containing scandium and gadolinium can provide a reliable structure with a high dielectric constant (high k). In an embodiment, atomic layer deposition (ALD) can be...
7999257 Process for eliminating delamination between amorphous silicon layers  
A circuit structure includes a substrate; a first amorphous silicon layer over the substrate; a first glue layer over and adjoining the first amorphous silicon layer; and a second amorphous silicon...
7989805 Electronic device improved in heat radiation performance for heat generated from active element  
An electronic device of the present invention includes a first substrate provided with a thin film active element, having a thickness of 200 μm or lower, and a second substrate formed with a high ...
7968879 Thin film transistor and display device including the same  
One object of the present invention is reduction of off current of a thin film transistor. Another object of the present invention is improvement of electric characteristics of the thin film...
7960261 Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor  
The present invention relates to a method for manufacturing a polycrystalline semiconductor film that can be used for a semiconductor device. In the method, an amorphous semiconductor film is...
7956361 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film  
An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior...
7935582 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film  
An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior...
7935966 Semiconductor device with heterojunctions and an inter-finger structure  
A semiconductor device including, on at least one surface of a crystalline semiconductor substrate, at least one first amorphous semiconductor region doped with a first type of conductivity. The...
7927713 Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases  
The present invention generally comprises a semiconductor film and the reactive sputtering process used to deposit the semiconductor film. The sputtering target may comprise pure zinc (i.e., 99.995...
7923724 Phase change memory that switches between crystalline phases  
A phase change memory may transition between two crystalline states. In one embodiment, the phase change material is a chalcogenide which transitions between face centered cubic and hexagonal...
7915612 Photoelectric conversion device and method of producing the same  
A photoelectric conversion device includes a p-type layer, an i-type layer and an n-type layer each made of a silicon base semiconductor, stacked in this order, wherein the i-type layer contains...
7915520 Photoelectric conversion device and manufacturing method thereof  
A photoelectric conversion device comprising: a pin-type photoelectric conversion layer constituted of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer,...
7915103 Method for fabricating a flat panel display  
The method for fabricating a flat panel display includes performing a first crystallization process to re-crystallize an amorphous silicon layer on a glass substrate to make the amorphous silicon...
7906780 Field effect transistor  
Provided is a field effect transistor, provided with a gate electrode 15, a source electrode 13, and a drain electrode 14 formed on a substrate, including a channel layer 11 formed of an oxide...
7893431 ZnO based semiconductor devices and methods of manufacturing the same  
A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3)·y(In2O3)·z(ZnO) Formula 1 wherein, about 0.75≦x/z≦ about 3.15, and about 0.55≦...
7888155 Phase-change memory element and method for fabricating the same  
A phase-change memory element is provided. The phase-change memory element includes: a first electrode formed on a substrate; a first dielectric layer, with an opening, formed on the first...
7884360 Thin-film device and method of fabricating the same  
A thin-film device includes a first electrical insulator, an oxide-semiconductor film formed on the first electrical insulator, and a second electrical insulator formed on the oxide-semiconductor...
7872259 Light-emitting device  
An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and...
7863518 Photovoltaic device  
A photovoltaic device capable of improving output characteristics is provided. This photovoltaic device comprises a crystalline semiconductor member, a substantially intrinsic first amorphous...
7858982 Thin film transistor array panel and method for manufacturing the same  
The present invention provides a thin film transistor array panel comprising: an insulating substrate; a gate line formed on the insulating substrate and having a gate electrode; a gate insulating...
7851792 Field-effect transistor  
Provided is a field-effect transistor including an active layer and a gate insulating film, wherein the active layer includes an amorphous oxide layer containing an amorphous region and a...
7848138 Biasing a phase change memory device  
A phase change memory device includes a plurality of cells connected to bitlines and including respective phase change memory elements and cell select devices and an addressing circuit for...
7825013 Integrated circuit comprising an amorphous region and method of manufacturing an integrated circuit  
An integrated circuit comprises a doped semiconductor portion including an amorphous portion and a contact structure comprising a conductive material. The contact structure is in contact with the...
7812333 Integrated circuit including resistivity changing material having a planarized surface  
An integrated circuit includes a first electrode and a first resistivity changing material coupled to the first electrode. The first resistivity changing material has a planarized surface. The...
7804095 Image display device and manufacturing method for the same  
Provided is an image display device comprising, on a TFT substrate: a plurality of gate lines and a plurality of drain lines which intersect with each other; a pixel TFT provided within a pixel...
7790582 Method for fabricating polysilicon liquid crystal display device  
A method for fabricating a polysilicon liquid crystal display device includes: forming a first amorphous silicon layer on a substrate; forming a photoresist pattern on the first amorphous silicon...
7791106 Gallium nitride material structures including substrates and methods associated with the same  
Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The...
7791074 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film  
An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior...
7785977 Thin film capacitor and manufacturing method therefor  
A thin film capacitor including a substrate, a capacitor portion having an upper conductor, a lower conductor, and a dielectric thin film, and a resin protective layer for protecting the capacitor...
7777291 Integrated circuits having interconnects and heat dissipators based on nanostructures  
The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are...
7746333 Semiconductor device  
The present invention intends to realize a narrow frame of a system on panel. In addition to this, a system mounted on a panel is intended to make higher and more versatile in the functionality. In...
7718987 Electrically writable and erasable memory medium having a data element with two or more multiple-layer structures made of individual layers  
A memory cell for an electrically writeable and erasable memory medium as well as a memory medium thereof is provided. The memory cell comprises a data recording element, the data recording element...
7714327 Electronic device improved in heat radiation performance for heat generated from active element  
An electronic device of the present invention includes a first substrate provided with a thin film active element, having a thickness of 200 μm or lower, and a second substrate formed with a high ...
7696063 Manufacturing method of semiconductor device  
A semiconductor device which has higher integration and is further reduced in thickness and size. A semiconductor device with high performance and low power consumption. A semiconductor element...
7687804 Method for fabricating a semiconductor structures and structures thereof  
Methods of fabricating a semiconductor structure with a non-epitaxial thin film disposed on a surface of a substrate of the semiconductor structure; and semiconductor structures formed thereof are...
7682945 Phase change element extension embedded in an electrode  
The present invention in one embodiment provides a method of forming a memory device that includes providing an interlevel dielectric layer including a conductive stud having a first width; forming...
7671354 Integrated circuit including spacer defined electrode  
An integrated circuit includes a contact, a first spacer, and a first electrode including a first portion and a second portion. The second portion contacts the contact and is defined by the first...
7655938 Phase change memory with U-shaped chalcogenide cell  
A phase change memory may be made of a chalcogenide material having a U-shape. The U-shaped chalcogenide may transition between amorphous and crystalline phases in an upper part of a vertical...
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