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8927379 Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technology  
A method of forming a heterojunction bipolar transistor. The method includes providing a structure comprising at least an intrinsic base region and an emitter pedestal region. A stack is formed on...
8476734 Semiconductor component and methods for producing a semiconductor component  
A semiconductor component includes a semiconductor body, in which are formed: a substrate of a first conduction type, a buried semiconductor layer of a second conduction type arranged on the...
8334451 Discrete and integrated photo voltaic solar cells  
A photovoltaic (PV) cell device comprises a first semiconductor substrate; a second semiconductor substrate bonded to the first semiconductor substrate; an insulating layer provided between the...
8242605 Semiconductor device and method of manufacturing the same  
In a semiconductor device having an LDMOSFET, a source electrode is at the back surface thereof. Therefore, to reduce electric resistance between a source contact region in the top surface and the...
8018006 Semiconductor device having an enlarged space area surrounding an isolation trench for reducing thermal resistance and improving heat dissipation  
A semiconductor device includes a lower substrate, a thin semiconductor layer and an insulating layer formed between the lower substrate and the semiconductor layer. An active transistor area is...
7816264 Wafer processing method  
A wafer processing method having a step of reducing the thickness of a wafer in only a device forming area where semiconductor chips are formed by grinding and etching the back side of the wafer...
7629646 Trench MOSFET with terraced gate and manufacturing method thereof  
A trench metal oxide semiconductor field effect transistor (MOSFET) with a terraced trench gate. An epitaxial layer with a plurality of trenches is provided and a gate oxide layer is covered the...
7511356 Voltage-controlled semiconductor inductor and method  
A voltage-controlled semiconductor inductor and method is provided. According to various embodiments, the voltage-controlled inductor includes a conductor configured with a number of inductive...
7507669 Gap tuning for surface micromachined structures in an epitaxial reactor  
A device includes a top layer having at least two opposing faces, and at least two epitaxially deposited layers, each of the at least two epitaxially deposited layers situated on a respective one...
7439558 Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement  
A method and system for providing a bipolar transistor is described. The method and system include providing a compound base region, providing an emitter region coupled with the compound base...
6879021 Electronically programmable antifuse and circuits made therewith  
An antifuse device (120) that includes a bias element (124) and an programmable antifuse element (128) arranged in series with one another so as to form a voltage divider having an output node (F)...
6828650 Bipolar junction transistor structure with improved current gain characteristics  
A Bipolar Junction Transistor (BJT) that reduces the variation in the current gain through the use of a trench pullback structure. The trench pullback structure is comprised of a trench and an...
6690083 Use of silicide blocking layer to create high valued resistor and diode for sub-1V bandgap  
The present invention is drawn to a method and a system for creating a sub-1V bandgap reference (BGR) circuit. In particular, a sub-1V BGR circuit is formed comprising a shallow trench isolation...
6646320 Method of forming contact to poly-filled trench isolation region  
Existing polysilicon emitter technology is used to contact poly fill in a trench isolation structure. A standard single poly emitter window process is followed. An “emitter window” is masked...
6534820 Integrated dynamic memory cell having a small area of extent, and a method for its production  
An integrated dynamic memory cell having a small area of extent on a semiconductor substrate is described. The memory cell has a selection MOSFET with a gate connection area that is connected to a...
6525403 Semiconductor device having MIS field effect transistors or three-dimensional structure  
A semiconductor projection is formed on a semiconductor substrate of the first conductivity type and has a semiconductor layer of the first conductivity type. The semiconductor projection has a...
6495897 Integrated circuit having etch-resistant layer substantially covering shallow trench regions  
An integrated circuit is fabricated with a layer of polysilicon located on top of shallow trench regions. The polysilicon is patterned so that the trench features are not exposed during an etching...
6433387 Lateral bipolar transistor  
Lateral bipolar transistor, in which a thin diffusion barrier (4) is applied to a base region (10) between an emitter region (9) and a collector region (11), and there is present, on said barrier,...
6376880 High-speed lateral bipolar device in SOI process  
A lateral bipolar transistor includes a semiconductor layer overlying an electrically insulating material and an insulating layer overlying a central portion of the semiconductor layer. A contact...
6329699 Bipolar transistor with trenched-groove isolation regions  
The invention relates to semiconductor devices having a bipolar transistor to form an isolation area within a base electrode contact area to ensure stable contact of the base electrode. The...
6093953 Isolation regions and methods of forming isolation regions  
A silicon-comprising layer is employed adjacent a trench during planarization of an oxide fill within the trench. An overhanging oxide sidewall is formed along a lateral edge of a trenched...
6073343 Method of providing a variable guard ring width between detectors on a substrate  
A method is provided for maximizing substrate usage in the fabrication of flat panel displays or detectors, while also maximizing electrostatic protection for the displays or detectors. Initially,...
5998816 Sensor element with removal resistance region  
A sensor element provided with a silicon substrate having a semiconductor circuit, a sensing-element portion formed on the silicon substrate and connected to the semiconductor circuit, and a...
5982021 Vertical polysilicon diode compatible with CMOS/BiCMOS integrated circuit processes  
A junction diode structure formed within an integrated circuit. The junction diode structure comprises a semiconductor substrate. The junction diode structure also comprises a dielectric layer...
5910676 Method for forming a thick base oxide in a BiCMOS process  
A BiCMOS structure and a method for making the same is disclosed, where the dielectric layer between the emitter electrode and the base region is formed of a deposited dielectric. After definition...
5909623 Manufacturing method of semiconductor device  
A manufacturing method of the present invention comprises the first step of forming an epitaxial base layer in an opening of an element-isolating oxide film on a semiconductor substrate in a...
5877539 Bipolar transistor with a reduced collector series resistance  
A collector structure in a bipolar transistor on a semiconductor substrate is surrounded by trench isolations. A well region has a first impurity concentration and extends in an upper portion of...
5861659 Semiconductor device  
In a semiconductor device having regions of a vertical pnp bipolar transistor, that is, a collector region composed of a p-type semiconductor region, a base region composed of an n-type...
5856700 Semiconductor device with doped semiconductor and dielectric trench sidewall layers  
The present invention is directed to a semiconductor device having an ohmic contact to a buried layer. The device includes a device wafer having on its first surface a first dielectric layer and...
5856228 Manufacturing method for making bipolar device having double polysilicon structure  
A semiconductor device and a manufacturing method therefor which can simultaneously realize both a reduction in base transit time by a reduction in base width and a reduction in base resistance by...
5847438 Bonded IC substrate with a high breakdown voltage and large current capabilities  
A semiconductor device includes a groove formed in a surface of a first semiconductor substrate of one conductivity type in order to partition and isolate first and second device regions. A first...
5834800 Heterojunction bipolar transistor having mono crystalline SiGe intrinsic base and polycrystalline SiGe and Si extrinsic base regions  
A heterojunction bipolar transistor in an integrated circuit has intrinsic and extrinsic base portions. The intrinsic base portion substantially comprises epitaxial silicon-germanium alloy. The...
5733791 Methods for fabrication of bipolar device having high ratio of emitter to base area  
A bipolar transistor is provided whose emitter surrounds the base. The transistor has in some embodiments a high ratio of the emitter area to the base area and low collector and emitter...
5604374 Semiconductor device and manufacturing method thereof  
A semiconductor device comprises a semiconductor substrate having a main surface, a first semiconductor region of a first conductive type, formed on the main surface of the semiconductor...
5581112 Lateral bipolar transistor having buried base contact  
A lateral bipolar transistor comprising a self-aligned polysilicon base contact, and polysilicon emitter and collector contacts is provided. The self-aligned base contact significantly reduces the...
5548155 Bipolar type semiconductor device having small parasitic capacitance, small dimensions, and small variation in transistor characteristics  
A semiconductor device in which a bipolar transistor is provided, such as a BiCMOS, and a production process thereof. The device has collector region of a first conductivity type; an intrinsic...
5541124 Method for making bipolar transistor having double polysilicon structure  
A semiconductor device and a manufacturing method therefor which can simultaneously realize both a reduction in base transit time by a reduction in base width and a reduction in base resistance by...
5506157 Method for fabricating pillar bipolar transistor  
Disclosed is a pillar bipolar transistor which has a bidirectional operation characteristic and in which a parasitic junction capacitance of a base electrode, and a method for fabricating the...
5504364 CMOS locos isolation for self-aligned NPN BJT in a BiCMOS process  
A method of fabricating BiCMOS devices, and the resultant BiCMOS device, are disclosed. According to the present invention, over-etching to the substrate on the deposited polysilicon emitter is...
5468989 Semiconductor integrated circuit device having an improved vertical bipolar transistor structure  
There is provided a semiconductor integrated circuit device having bipolar transistors each composed of an emitter region, base region, and collector region arranged vertically on a semiconductor...
5444285 Complementary bipolar polysilicon emitter devices  
Bipolar transistors and MOS transistors on a single semiconductor substrate involves depositing a single layer of polysilicon on a substrate, including complementary transistors of either or both...
5420454 Selective epitaxial silicon for intrinsic-extrinsic base link  
In a bipolar device, selective epitaxial silicon provides an improved intrinsic-extrinsic base link. A trench physically separates an intrinsic and extrinsic base portion. The trench includes...
5420457 Lateral high-voltage PNP transistor  
A semiconductor device comprising a semiconductor substrate with a base region, a collector region and an emitter region in a lateral arrangement. The base region having a first conductivity type,...
5397912 Lateral bipolar transistor  
A lateral bipolar transistor structure (10) formed in a laterally isolated semiconductor device tub (22) of a first conductivity type is provided. First and second trenches are etched in the...
5365090 Hetero bipolar transistor and method of manufacturing the same  
The specification discloses a hetero bipolar transistor which comprises a semiconductor substrate, a first silicon layer serving as a collector, a first silicon-germanium layer serving as a base,...
5298779 Collector of a bipolar transistor compatible with MOS technology  
A bipolar transistor comprising a semiconductor substrate, of a first conductivity type, a retrograde well serving as the collector and having a second conductivity type opposite to the first, a...
5294558 Method of making double-self-aligned bipolar transistor structure  
A method of making an improved bipolar transistor and the transistor itself having a double-self-aligned device structure are disclosed. The method and the transistor device provide self-alignment...
5234845 Method of manufacturing semiconductor IC using selective poly and EPI silicon growth  
Herein disclosed is an improved bipolar transistor manufacturing method which adopts an EBT (Epitaxial Base Transistor) structure using an SPESG (Selective Poly-and-Epitaxial-Silicon Growth)...
5234846 Method of making bipolar transistor with reduced topography  
A vertical bipolar transistor is constructed with reduced step height by codeposition of a polysilicon base contact member and an epitaxial device layer, thereby placing the base contact below the...
5221856 Bipolar transistor with floating guard region under extrinsic base  
A first device region (10) of one conductivity type adjacent one major surface (1a) of a semiconductor body (1) has a relatively highly doped subsidiary region (11) spaced from the one major...

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