Patents in Class 257/510

Matches 101 - 150 out of 573

Match	Document	Document Title
101	7253493	High density access transistor having increased channel width and methods of fabricating such devices A memory device having decreased cell size and having transistors with increased channel widths. More specifically, pillars are formed in a substrate such that sidewalls are exposed. The sidewalls...
102	7242071	Semiconductor structure A structure comprises a deep sub-collector buried in a first epitaxial layer and a near sub-collector buried in a second epitaxial layer. The structure further comprises a deep trench isolation...
103	7238564	Method of forming a shallow trench isolation structure A method and system for isolation trenches includes forming isolation trenches in a semiconductor substrate, filling the trenches with a filler material, creating voids near top edges of the...
104	7235856	Trench isolation for semiconductor devices In etching trench isolation structures, a pad oxide or sacrificial oxide may be formed with substantially the same (or higher) etch rate as the trench filler. Because the etch rate in the trench...
105	7235857	Power semiconductor device A semiconductor device is provided in which a plurality of MOSFETs including a vertical MOSFET is formed on a substrate. The device includes a silicon carbide substrate having front and back...
106	7233046	Semiconductor device and fabrication method thereof A semiconductor device and fabrication method thereof restrains an amplified current between input voltage Vin and ground voltage Vss, and first and second n-wells are biased into internal voltage...
107	7230312	Transistor having vertical junction edge and method of manufacturing the same Techniques for forming devices, such as transistors, having vertical junction edges. More specifically, shallow trenches are formed in a substrate and filled with an oxide. Cavities may be formed...
108	7224038	Semiconductor device having element isolation trench and method of fabricating the same A semiconductor device capable of preventing defective embedding of an insulator and improving the withstand voltage (dielectric strength) of an element isolation region is obtained. This...
109	7208754	Strained silicon structure A semiconductor device includes a substrate, a first epitaxial layer, a second epitaxial layer, a third epitaxial layer, a first trench, and a second trench. The first epitaxial layer is formed on...
110	7208812	Semiconductor device having STI without divot and its manufacture The method of manufacturing a semiconductor device has the steps of: etching a semiconductor substrate to form an isolation trench by using as a mask a pattern including a first silicon nitride...
111	7199411	Solid-state imaging device and camera A solid-state imaging device is formed on a silicon substrate for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current....
112	7196381	Corner protection to reduce wrap around A method and structure are provided with reduced gate wrap around to advantageously control for threshold voltage and increase stability in semiconductor devices. A spacer is provided aligned to...
113	7196394	Method and apparatus for a deposited fill layer A method of forming a semiconducting wafer is provided that utilizes fewer processing operations, reduces process variation, and lowers cost as well as production time. The method provided further...
114	7193269	MOS semiconductor device While using conventional manufacturing processes, it is intended to apply a compressive strain in the channel direction to the p-channel MOS field effect transistor and also apply a tensile strain...
115	7190042	Self-aligned STI for narrow trenches A self-aligned shallow trench isolation region for a memory cell array is formed by etching a plurality of vertical deep trenches in a substrate and coating the trenches with an oxidation barrier...
116	7186609	Method of fabricating trench junction barrier rectifier A Schottky rectifier includes a rectifying interface between a semiconductor body and a metal layer. Trenches are formed in the surface of the semiconductor body and regions of a conductivity type...
117	7176549	Shallow trench isolation using low dielectric constant insulator A shallow trench isolation is disclosed wherein the trench depth is reduced beyond that achieved in prior art processes. The reduced trench depth helps to eliminate the formation of voids during...
118	7170156	Laminar multi-layer piezoelectric roll component A multi-layer piezoelectric component includes a plurality of piezoelectric layers, a first inner electrode sheet, a second inner electrode sheet, a first outer electrode, and a second outer...
119	7170109	Heterojunction semiconductor device with element isolation structure A technique enabling to improve element isolation characteristic of a semiconductor device is provided. An element isolation structure is provided in a semiconductor substrate in which a silicon...
120	7166901	Semiconductor device A semiconductor device comprises a semiconductor substrate having a high voltage region and a low voltage region, at least a pair of adjacent high voltage MOS transistors disposed on the high...
121	7157770	MOS transistor with recessed gate and method of fabricating the same A MOS transistor with a recessed gate and a method of fabricating the same: The MOS transistor comprises a semiconductor substrate, and a trench isolation layer located in a predetermined region of...
122	7151023	Metal gate MOSFET by full semiconductor metal alloy conversion A MOSFET structure and method of forming is described. The method includes forming a metal-containing layer that is thick enough to fully convert the semiconductor gate stack to a semiconductor...
123	7138319	Deep trench isolation of embedded DRAM for improved latch-up immunity A protective structure for blocking the propagation of defects generated in a semiconductor device is disclosed. In an exemplary embodiment, the structure includes a deep trench isolation formed...
124	7129559	High voltage semiconductor device utilizing a deep trench structure A semiconductor device includes a substrate having a source, a drain, and a gate between the source and the drain. Both the source and the drain include a first edge, and the gate includes a first...
125	7122876	Isolation-region configuration for integrated-circuit transistor A transistor of an integrated circuit is provided. A first doped well region is formed in a well layer at a first active region. At least part of the first doped well region is adjacent to a gate...
126	7122866	Semiconductor memory device with a stacked gate including a floating gate and a control gate and method of manufacturing the same A semiconductor memory device includes first and second MOS transistors. The first MOS transistor is formed on a region enclosed by a first element isolating region and includes a first gate...
127	7122416	Method for forming a filled trench in a semiconductor layer of a semiconductor substrate, and a semiconductor substrate with a semiconductor layer having a filled trench therein A method for forming an isolation filled trench ( 25 ) in a silicon layer ( 21 ) of an SOI structure ( 20 ). The trench ( 25 ) is relieved adjacent its open mouth ( 30 ) in order to displace the...
128	7119386	Versatile system for triple-gated transistors with engineered corners The present invention provides a system for producing a triple-gate transistor segment ( 300 ), utilizing a standard semiconductor substrate ( 302 ). The substrate has a plurality of isolation...
129	7118942	Method of making atomic integrated circuit device A method of mass-producing a solid state device comprises providing an atomically smooth, solid state material layer no more than 40 Angstroms thick. This layer is uniformly and defect-freely...
130	7119412	Semiconductor device and method for manufacturing the same After formation of a gate insulating film for a high voltage transistor on the entire surface, when removing the gate insulating film existing within a low voltage region, etching is not finished...
131	7112849	Method of preventing semiconductor layers from bending and semiconductor device formed thereby Disclosed herein are various methods for preventing bending of a patterned SOI layer during trench sidewall oxidation, the methods comprising providing a patterned SOI layer having at least one...
132	7109551	Semiconductor device A semiconductor structure with device trench and a semiconductor device in the device trench, that enables realization of high integration, lowered on-resistance, reduction in switching losses and...
133	7105908	SRAM cell having stepped boundary regions and methods of fabrication A semiconductor device comprises a substrate. In addition, the semiconductor device comprises an active region and an isolation region. The active region is in the substrate and comprises a...
134	7102167	Method and system for providing a CMOS output stage utilizing a buried power buss A CMOS output stage is disclosed. The CMOS output stage comprises a substrate and at least one well coupled to the substrate. The CMOS output stage also includes a plurality of slots provided...
135	7095081	Semiconductor device and manufacturing method thereof A semiconductor device includes a substrate having first to fourth regions, a first insulating film formed on the substrate in the first region, a first epitaxial layer formed on the substrate in...
136	7095093	Semiconductor device and method of manufacturing a semiconductor device A semiconductor device comprises a semiconductor substrate having a substrate top surface on which a device should be formed; a gate electrode having an opposed surface opposed to said substrate...
137	7091536	Isolation process and structure for CMOS imagers A barrier implanted region of a first conductivity type located below an isolation region of a pixel sensor cell and spaced from a doped region of a second conductivity type of a photodiode of the...
138	7091574	Voltage island circuit placement A voltage island is disclosed. The voltage island comprises a physical domain and a lower voltage supply rail within the physical domain. The voltage island also includes an upper voltage supply...
139	7084477	Semiconductor device and manufacturing method of the same To suppress defects occurred in a semiconductor substrate, a semiconductor device is constituted by having: the semiconductor substrate; an element isolating region having a trench formed in the...
140	7075151	Semiconductor memory device for storing data as state of majority carriers accumulated in channel body and method of manufacturing the same A semiconductor memory device comprises a substrate; a first semiconductor layer of a first conduction type having a single crystalline structure isolated from the substrate by an insulator layer;...
141	7071529	Semiconductor device having a Damascene gate or a replacing gate A semiconductor device includes semiconductor elements and at least one dummy pattern. Each or at least some of the semiconductor elements has a Damascene gate structure or a replacing gate...
142	7071515	Narrow width effect improvement with photoresist plug process and STI corner ion implantation A method to reduce the inverse narrow width effect in NMOS transistors is described. An oxide liner is deposited in a shallow trench that is formed to isolate active areas in a substrate. A...
143	7067890	Thick oxide region in a semiconductor device A method of forming an oxide region in a semiconductor device includes the steps of forming a plurality of trenches in a semiconductor layer of the device, the trenches being formed in close...
144	7061069	Semiconductor device having two-layered charge storage electrode A first insulation film, a first conductor film, and a cap are sequentially formed on a semiconductor substrate. The first insulation film, the first conductor film, and the cap, and the substrate...
145	7061041	Memory device A memory device is provided. The memory device comprises a substrate, first isolation structures, stacked device structures, and second isolation structures. The substrate comprises a memory cell...
146	7061068	Shallow trench isolation structures having uniform and smooth topography Ions are implanted into the dielectric layer and/or barrier layer over a semiconductor substrate to change the polish rates of either or both layers during formation of a shallow trench isolation...
147	7056795	Thin-film transistor used as heating element for microreaction chamber The thin film transistor formed of polycrystalline silicon is positioned adjacent a heat reaction chamber. The gate electrode for the transistor is formed within a silicon substrate and a gate...
148	7057257	Semiconductor processing methods of forming transistors, semiconductor processing methods of forming dynamic random access memory circuitry, and related integrated circuitry Semiconductor processing methods of forming transistors, semiconductor processing methods of forming dynamic random access memory circuitry, and related integrated circuitry are described. In one...
149	7057242	Transistor structures having access gates with narrowed central portions An integrated circuit transistor includes an active region in a substrate, elongated along a first direction. A gate pattern is disposed on the substrate and crosses the active region along a...
150	7053451	Semiconductor device having impurity region under isolation region In formation of a source/drain region of an NMOS transistor, a gate-directional extension region < 41 a > of an N + block region < 41 > in an N + block resist film < 51 >...

Matches 101 - 150 out of 573

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