Matches 1 - 50 out of 191 1 2 3 4 >
Match Document Document Title
7342266 Field effect transistors with dielectric source drain halo regions and reduced miller capacitance  
A field effect transistor (FET) device includes a gate conductor and gate dielectric formed over an active device area of a semiconductor substrate. A drain region is formed in the active device...
7316949 Integrating n-type and p-type metal gate transistors  
At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS)...
7294518 Composition for stripping photoresist and method for manufacturing thin film transistor array panel using the same  
The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl...
7288787 Thin-film transistor, method for manufacturing thin-film transistor, and display using thin-film transistors  
The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film...
7274050 Packaging and manufacturing of an integrated circuit  
Apparatus, packaging, and methods of manufacture of an integrated circuit are provided. The integrated circuit includes a component of a first type fabricated on a first substrate containing a...
7262464 Semiconductor device with single crystal semiconductor layer(s) bonded to insulating surface of substrate  
A semiconductor device includes a substrate with an insulating surface and a single crystal semiconductor layer, which is bonded to the insulating surface of the substrate. The device further...
7259427 Semiconductor device and method of manufacturing the same  
The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin...
7241652 Method for fabricating organic thin film transistor  
Disclosed herein is a method for fabricating an organic thin film transistor that includes a gate electrode, a gate insulating film, source/drain electrodes and an organic semiconductor layer...
7221023 Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same  
According to some embodiments of the invention, a method includes preparing a semiconductor substrate having an active region, doping channel ions in the active region, forming a planarized...
7198967 Active matrix type semiconductor display device  
There is provided an active matrix type semiconductor display device which realizes low power consumption and high reliability. In the active matrix type semiconductor display device of the present...
7176479 Nitride compound semiconductor element  
A nitride compound semiconductor element having improved characteristics, productivity and yield. A nitride compound semiconductor element includes: a sapphire substrate; a first single crystalline...
7154121 Light emitting device with a micro-reflection structure carrier  
A light emitting device includes a micro-reflection structure carrier, which is formed by performing etching process on a carrier, a reflection layer, a light emitting layer, and a transparent...
7151277 Selective etching of silicon carbide films  
A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on...
7145180 Method of fabricating a light emitting device, and light emitting device  
In the fabricating of a light emitting device, a light emitting layer portion 24 and a current spreading layer 7, respectively composed of a Group III-V compound semiconductor, are stacked on a...
7132677 Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same  
An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN...
7129123 SOI wafer and a method for producing an SOI wafer  
In a method for producing an SOI wafer comprising steps of implanting ions from a bond wafer surface to form an ion-implanted layer inside the wafer, bonding the ion-implanted bond wafer surface...
7122864 Semiconductor substrate having a partial SOI structure, method of manufacturing the same, a semiconductor device having a partial SOI structure, and method of manufacturing the same  
A semiconductor substrate is disclosed which comprises a first single crystal silicon layer, an insulator formed to partially cover one main surface of the first single crystal silicon layer, a...
7109528 Light receiving or emitting semiconductor apparatus  
With a solar ball 10 serving as a light-receiving semiconductor apparatus, the outer surface of a spherical solar cell 1 is covered with a light-transmitting outer shell member 11 , and...
7105866 Heterojunction tunneling diodes and process for fabricating same  
High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating...
7098498 Floating-gate semiconductor structures  
Hot-electron injection driven by hole impact ionization in the channel-to-drain junction of a p-channel MOSFET provides a new mechanism for writing a floating-gate memory. Various pFET...
7078727 Semiconductor device and its manufacturing method  
Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation...
7074630 Method of forming light emitter layer  
A light emitting layer including a quantum structure and the forming method of forming the same is provided. The forming method includes several steps. At first, a compound dielectric layer forms,...
7005676 Semiconductor device manufacturing method  
There is here disclosed a semiconductor device manufacturing method comprising a step of forming an island region including a monocrystalline Si 1-x-y Ge x C y layer (1>x>0, 1>y≧0) and...
6982195 Method of forming poly-silicon crystallization  
An amorphous silicon layer is formed on a substrate, and then a protective layer and a reflective layer are formed in turn to form a film stack on portions of the amorphous silicon layer. The...
6914307 Semiconductor device and method of manufacturing the same  
A semiconductor device includes a semiconductor layer, a plurality of semiconductor elements formed on the semiconductor layer, and an isolation film provided in a surface of the semiconductor...
6909115 Semiconductor device applying to the crystalline semiconductor film  
There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat treatment time required for crystal growth is shortened and a process is simplified....
6903967 Memory with charge storage locations and adjacent gate structures  
A memory having gate structures adjacent opposing sidewalls of a semiconductor structure including a channel region and a plurality of charge storage locations between the gate structures and the...
6903367 Programmable memory address and decode circuits with vertical body transistors  
Various embodiments provide a decoder for a memory array, comprising an array of address and output lines, vertical pillars, vertical floating gate transistors, and buried source lines. Each pillar...
6864520 Germanium field effect transistor and method of fabricating the same  
A method (and structure) for an electronic chip having at least one layer of material for which a carrier mobility of a first carrier type is higher in a first crystal surface than in a second...
6825491 Integrated variable electrical capacitance device and method for producing said device  
The present invention concerns an integrated variable capacitance device comprising at least one membrane ( 12 ) forming at least one mobile armature and having at least one principal face facing...
6812490 Thin-film transistor, panel, and methods for producing them  
The present invention provide an LDD type TFT having excellent properties, particularly for a liquid crystal display unit. For this purpose, a top gate type LDDTFT gate electrode is converted into...
6809012 Method of making a thin film transistor using laser annealing  
The present invention is characterized in that gettering is performed such that impurity regions to which a noble gas element is added are formed in a semiconductor film and the metallic element...
6765229 Method for producing semiconductor device  
A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an...
6734499 Operation method of semiconductor devices  
An insulated gate field effect transistor comprises a non-single-crystalline semiconductor layer formed on a substrate, a gate electrode is formed on a portion of the surface of said semiconductor...
6720575 Semiconductor device with a semiconductor layer over a surface having a recess pitch no smaller than 0.3 microns  
An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100 . Recesses 105 a to 105 d corresponding to recesses 101 a to 101 d ...
6717178 Semiconductor devices fabricated using sputtered silicon targets  
A thin film transistor includes an active silicon layer deposited by physical vapor deposition (PVD), wherein a silicon precursor is doped with impurities prior to use as a target in the PVD...
6713819 SOI MOSFET having amorphized source drain and method of fabrication  
An integrated circuit formed in semiconductor-on-insulator format. The integrated circuit includes a layer of semiconductor material disposed on an insulating layer, where the insulating layer...
6700133 Method for producing semiconductor device  
A film having a high thermal conductivity material such as aluminum nitride is formed on a substrate, and then a silicon film is formed. When a laser light or an intense light corresponding to the...
6680487 Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same  
There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat time required for crystal growth is shortened and a process is simplified. Two...
6664806 Memory address and decode circuits with ultra thin body transistors  
A decoder for a memory device is provided. The decoder array includes a number of address lines and a number of output lines. The address lines and the output lines form an array. The decoder...
6664566 Photoelectric conversion device and method of making the same  
A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal...
6627919 Thermally stable nickel germanosilicide formed on SiGe  
A thermally stable nickel germanosilicide on SiGe integrated circuit device, and a method of making the same, is disclosed. During fabrication of the device iridium or cobalt is added at the...
6605840 Scalable multi-bit flash memory cell and its memory array  
The scalable multi-bit flash memory cell includes three regions: the first-side region, the gate region, and the second-side region, in which the gate region includes two stack-gate transistors and...
6566682 Programmable memory address and decode circuits with ultra thin vertical body transistors  
Structures and method for programmable memory address and decode circuits with ultra thin vertical body transistors are provided. The memory address and decode circuits includes a number of address...
6548370 Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces  
A laser annealing method for obtaining a crystalline semiconductor film having a large grain size is provided. Laser light is irradiated to the top surface and the bottom surface of an amorphous...
6538268 Semiconductor device and method of producing the same  
A semiconductor device has a MOSFET formed on a single crystalline silicon layer in an SOI structure in which the silicon layer is laminated along with an insulator on a handle wafer. To prevent...
6531710 SOI film formed by laser annealing  
An ULSI MOSFET formed using silicon on insulator (SOI) principles includes masking regions of an amorphous silicon film on a substrate and exposing intended active regions. Laser energy is directed...
6528820 Semiconductor device and method of fabricating same  
There is disclosed a method of fabricating a thin-film transistor having excellent characteristics. Nickel element is held in contact with selected regions of an amorphous silicon film. Then,...
6515299 Semiconductor device with rod like crystals and a recessed insulation layer  
An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105 a to 105 d corresponding to recesses 101 a to 101 d ...
6509650 Electronic device, and method of patterning a first layer  
The electronic device ( 1 ) has a layer ( 11 ) of a material comprising a first and a second element. This material has an amorphous and a crystalline state. A transition from the amorphous to the...
Matches 1 - 50 out of 191 1 2 3 4 >