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8183566 |
Hetero-crystalline semiconductor device and method of making same
A hetero-crystalline semiconductor device and a method of making the same include a non-single crystalline semiconductor layer and a nanostructure layer that comprises a single crystalline...
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8178871 |
Organic transistor and method for producing the same
An organic transistor comprising: at least a gate electrode and a gate insulating layer formed on the gate electrode, the gate insulating layer including, on a surface of the gate electrode, a...
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8168972 |
Method for simultaneous recrystallization and doping of semiconductor layers and semiconductor layer systems produced according to this method
A method for simultaneous recrystallization and doping of semiconductor layers, in particular for the production of crystalline silicon thin layer solar cells. A substrate base layer 1 is produced,...
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8164116 |
Semiconductor device with hetero semiconductor region and method of manufacturing the same
A semiconductor device includes: a semiconductor base; a hetero semiconductor region which is in contact with the semiconductor base and which has a band gap different from that of the...
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8164095 |
***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
It is an object to provide a semiconductor device which has a large size and operates at high speed. A top gate transistor which includes a semiconductor layer of single-crystal and a bottom gate...
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8120139 |
Void isolated III-nitride device
Isolation of III-nitride devices may be performed with a dopant selective etch that provides a smooth profile with little crystal damage in comparison to previously used isolation techniques. The...
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8093590 |
Photoelectric conversion device
In order to form a metal thin film, a silicide film, or the like between an upper-layer unit cell and a lower-layer unit cell in stacked-layer photoelectric conversion devices, a step of forming...
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8080824 |
Suppressing recombination in an electronic device
A semiconductor material structure includes at least one region capable of generating electrons and holes each having an associated mean kinetic energy during operation. A material layer in...
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8044465 |
Method for producing partial SOI structures comprising zones connecting a superficial layer and a substrate
The invention relates to a method for producing a semiconductor structure comprising a superficial layer, at least one embedded layer, and a support, which method comprises: a step of forming, on a...
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8039359 |
Method of forming low capacitance ESD device and structure therefor
In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
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8026517 |
Semiconductor structures
A semiconductor structure is disclosed. The semiconductor structure includes a polycrystal substrate, a first single crystal layer formed thereon and a second single crystal layer formed on the...
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8008156 |
Nitride read only memory device with buried diffusion spacers and method for making the same
A method for making a nitride read only memory device with buried diffusion spacers is disclosed. An oxide-nitride-oxide (ONO) layer is formed on top of a silicon substrate, and a polysilicon gate...
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7955934 |
***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Nitride read only memory device with buried diffusion spacers and method for making the same
A method for making a nitride read only memory device with buried diffusion spacers is disclosed. An oxide-nitride-oxide (ONO) layer is formed on top of a silicon substrate, and a polysilicon gate...
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7935955 |
Group III nitride semiconductor multilayer structure
An object of the present invention is to provide a Group III nitride semiconductor multilayer structure having a smooth surface and exhibiting excellent crystallinity, which multilayer structure...
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7919776 |
High frequency diode and method for producing same
A high frequency diode comprising: a P type region, an N type region, and an I layer as a high resistivity layer interposed between the P type region and the N type region, wherein the I layer is...
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7915611 |
Photoelectric conversion device
In order to form a metal thin film, a silicide film, or the like between an upper-layer unit cell and a lower-layer unit cell in stacked-layer photoelectric conversion devices, a step of forming...
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7915520 |
Photoelectric conversion device and manufacturing method thereof
A photoelectric conversion device comprising: a pin-type photoelectric conversion layer constituted of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer,...
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7915103 |
Method for fabricating a flat panel display
The method for fabricating a flat panel display includes performing a first crystallization process to re-crystallize an amorphous silicon layer on a glass substrate to make the amorphous silicon...
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7910923 |
Semiconductor device
A semiconductor device with superior long-term reliability is disclosed that alleviates current concentration into a switch structure arranged at an outermost portion. The semiconductor device...
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7906778 |
Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures
Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures that include one or more nanowires are also disclosed. The nanowires can...
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7893434 |
High frequency diode and method for producing same
A high frequency diode comprising: a P type region, an N type region, and an I layer as a high resistivity layer interposed between the P type region and the N type region, wherein the I layer is...
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7879263 |
Method and solution to grow charge-transfer complex salts
The present disclosure relates to methods and solutions for growing metal charge-transfer salts on a metal surface, such as a metal layer at the bottom of a via hole. The method makes use of a...
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7875884 |
Hetero-crystalline structure and method of making same
A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single...
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7858981 |
Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain
Some embodiments of the present invention include providing carbon doped regions and raised source/drain regions to provide tensile stress in NMOS transistor channels.
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7851695 |
Stacked-type photoelectric conversion device
The present invention makes it possible to provide a stacked-type thin-film photoelectric conversion device having high photostability, at a high yield rate and significantly reduced production...
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7842537 |
Stressed semiconductor using carbon and method for producing the same
A stressed semiconductor using carbon is provided. At least one carbon layer containing diamond is formed either below a semiconductor layer or above a semiconductor device. The carbon layer...
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7781774 |
Thin film transistor array panel
A thin film transistor array panel and a method of manufacturing the same include: a substrate; a data line formed on the substrate; a gate line intersecting the data line and including a gate...
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7777233 |
Device containing non-blinking quantum dots
An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternary...
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7772486 |
Photovoltaic device
The present invention provides a photovoltaic device capable of keeping reduction of the yield in modularization in check. This photovoltaic device comprises a transparent conductive film, and a...
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7745935 |
Method to create super secondary grain growth in narrow trenches
The present invention relates to a method for obtaining enlarged Cu grains in small trenches. More specifically it related to a method for creating enlarged copper grains or inducing super...
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7709837 |
Semiconductor device and its manufacturing method
Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation...
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7709305 |
Method for producing partial SOI structures comprising zones connecting a superficial layer and a substrate
The invention relates to a method for producing a semiconductor structure comprising a superficial layer, at least one embedded layer, and a support, which method comprises: a step of forming, on a...
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7705426 |
Integration of a SiGe- or SiGeC-based HBT with a SiGe- or SiGeC-strapped semiconductor device
The present invention provides an integrated semiconductor device that includes a semiconductor substrate, a first device containing a heterojunction bipolar transistor (HBT) located in a first...
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7671448 |
Semiconductor device including two organic semiconductor layers
It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of...
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7642178 |
Semiconductor device, method for manufacturing the same and method for evaluating the same
A method for manufacturing a semiconductor device includes steps of: forming a first epitaxial film on a silicon substrate; forming a trench in the first epitaxial film; and forming a second...
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7642605 |
Semiconductor device
A semiconductor device includes a glass substrate having a main surface, a polysilicon film formed on the main surface, having a channel region formed and having a source region and a drain region...
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7608530 |
Hetero-crystalline structure and method of making same
A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single...
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7601983 |
Transistor and method of manufacturing the same
A transistor includes a semiconductor substrate that has a first surface of a {100} crystal plane, a second surface of the {100} crystal plane having a height lower than that of the first surface,...
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7553691 |
Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell
A method and a multijunction solar device having a high band gap heterojunction middle solar cell are disclosed. In one embodiment, a triple-junction solar device includes bottom, middle, and top...
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7547914 |
Single-crystal layer on a dielectric layer
The process relates to the production of a layer of a single-crystal first material on a second material. The second material has at least one aperture exposing a surface portion of a...
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7531240 |
Substrate with locally integrated single crystalline silicon layer and method of fabricating the same
A method of fabricating a large substrate with a locally integrated single crystalline silicon layer is provided. The method includes: forming a buffer layer on a support plate; separately...
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7456567 |
Organic electroluminescent device, and azepine compound and method for producing the same
An organic electroluminescent device having a pair of electrodes, and at least one organic layer interposed between the pair of electrodes, with the organic layer containing at least one compound...
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7446335 |
Process and apparatus for forming nanoparticles using radiofrequency plasmas
Methods and apparatus for producing nanoparticles, including single-crystal semiconductor nanoparticles, are provided. The methods include the step of generating a constricted radiofrequency plasma...
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7342266 |
Field effect transistors with dielectric source drain halo regions and reduced miller capacitance
A field effect transistor (FET) device includes a gate conductor and gate dielectric formed over an active device area of a semiconductor substrate. A drain region is formed in the active device...
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7316949 |
Integrating n-type and p-type metal gate transistors
At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS)...
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7274050 |
Packaging and manufacturing of an integrated circuit
Apparatus, packaging, and methods of manufacture of an integrated circuit are provided. The integrated circuit includes a component of a first type fabricated on a first substrate containing a...
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7262464 |
Semiconductor device with single crystal semiconductor layer(s) bonded to insulating surface of substrate
A semiconductor device includes a substrate with an insulating surface and a single crystal semiconductor layer, which is bonded to the insulating surface of the substrate. The device further...
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7241652 |
Method for fabricating organic thin film transistor
Disclosed herein is a method for fabricating an organic thin film transistor that includes a gate electrode, a gate insulating film, source/drain electrodes and an organic semiconductor layer...
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7198967 |
Active matrix type semiconductor display device
There is provided an active matrix type semiconductor display device which realizes low power consumption and high reliability. In the active matrix type semiconductor display device of the present...
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7176479 |
Nitride compound semiconductor element
A nitride compound semiconductor element having improved characteristics, productivity and yield. A nitride compound semiconductor element includes: a sapphire substrate; a first single crystalline...
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